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  • 1
    Electronic Resource
    Electronic Resource
    Deep level analysis of undoped Ga"x In"1"-"x P/GaAs single heterojunctions grown by MOMBE and MOVPE
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 33 (1992), S. 63-66 
    Details
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(92)80227-T
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  • 2
    Electronic Resource
    Electronic Resource
    Optical properties and structure of microcrystalline hydrogenated silicon prepared by radio-frequency magnetron sputtering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2389-2398 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the optical properties of hydrogenated microcrystalline silicon films prepared by rf magnetron sputtering. Spectroscopic ellipsometry (SE) has been used to measure the dielectric spectra in the 1.66–5.6-eV range. Films produced with substrate temperature higher than 200 °C and hydrogen partial pressure ratio equal to 0.5 exhibited a microcrystalline structure. Distinct differences were observed between such films as amorphous and microcrystalline films in their dielectric function spectra and other optical quantities. An energy shift and a broadening of the E1 and E2 transitions for the microcrystalline samples were calculated from the analysis of SE data. It was observed that the rf power and the substrate temperature were the primary factors controlling the microcrystallite formation. A strong density dependence of microcrystallinity was observed, for all the optical parameters investigated. The effect of the hydrogen concentration and the hydrogen-bonding configuration on the optical properties is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341671
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  • 3
    Electronic Resource
    Electronic Resource
    Dependence of the photoreduction and oxidation behavior of indium oxide films on substrate temperature and film thickness (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5382-5387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium oxide (InOx) films with a thickness of 10–1100 nm were deposited onto Corning 7059 glass and silica substrates at various substrate temperatures. An unusual decrease of the lateral grain size with increasing substrate temperature during deposition was found. The changes in the conductivity of the films after exposure to ultraviolet light in vacuum and subsequent oxidation in ozone atmosphere were analyzed and related to their structural and morphological properties. It is suggested that the photoreduction and oxidation treatments affect only a thin layer less than 10 nm at the surface of the film, while the minimum bulk conductivity is mainly determined by the structural and morphological properties. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410895
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  • 4
    Electronic Resource
    Electronic Resource
    Photoreduction and oxidation of as-deposited microcrystalline indium oxide (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9349-9352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium oxide (InOx) films with a thickness of 100–500 nm were prepared by dc magnetron sputtering onto Corning 7059 glass substrates. The as-deposited films were microcrystalline as revealed by x-ray diffraction analysis. The conductivity of the as-deposited films was of the order of 10−3–10−2 Ω−1 cm−1 and increased up to the order of 101–102 Ω−1 cm−1 by exposure to ultraviolet light hν≥3.5 eV in vacuum. By subsequently exposing the same films to an oxidizing atmosphere they reverted to the insulating state. Photoreduction and oxidation have been shown to change the conductivity properties of one and the same film in a fully reversible manner. In this article, we demonstrate that the large reversible conductivity changes produced by UV photoreduction and oxidation are not limited to amorphous InOx but are equally observed in microcrystalline InOx. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362612
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  • 5
    Electronic Resource
    Electronic Resource
    Modifications in α-Si:H during thermal annealing: In situ spectroscopic ellipsometry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2791-2798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device-quality a-Si:H thin films, grown by rf magnetron sputtering, were annealed in the temperature range up to 850 °C and studied by in situ ellipsometry, spectroscopic ellipsometry, and thermal evolution measurements. Annealing causes a volume reduction which can be as high as 5%, and after annealing at T(approximately-greater-than)800 °C the material becomes microcrystalline with an average crystallite size that depends on the annealing temperature. A detailed analysis of the peak height of the imaginary part of the pseudodielectric function 〈ε(ω)〉, combined with the examination of the fundamental gap, the average gap (Penn gap), and the refractive index of a-Si:H, provides new insight on the role of hydrogen and the structural modifications induced by thermal annealing. Based on the presented experimental findings we propose the following: (a) annealing below Ts causes reduction of the isolated microvoids; (b) the weakly bound hydrogen is correlated with regions with a high density of microvoids; and (c) the evolution of weakly bound hydrogen does not drastically influence the optical properties of the film while evolution of isolated hydrogen does. The rate of change of the optical properties as a function of T is (a) nearly constant for TT〈 Ts, (b) increases for T (approximately-greater-than) Ts, and (c) decreases dramatically for T(approximately-greater-than)600 °C, therefore indicating irreversible structural changes at T (approximately-greater-than) Ts mainly due to isolated hydrogen loss.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349341
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  • 6
    Electronic Resource
    Electronic Resource
    Laser-machined layer-by-layer metallic photonic band-gap structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3263-3265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metallic photonic band-gap crystals operating in the microwave frequency range were fabricated by laser precision machining. They consist of stainless steel plates with a tetragonal lattice of holes and a lattice constant of 15 mm. Transmission measurements show that periodic crystals exhibit a cutoff frequency in the 8–18 GHz range, below which no propagation is allowed. The cutoff frequency can be easily tuned by varying the interlayer distance or the filling fraction of the metal. Combinations of plates with different hole diameters create defect modes with relatively sharp peaks, which are tunable. The experimental measurements are in good agreement with theoretical calculations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123314
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  • 7
    Electronic Resource
    Electronic Resource
    Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 962-968 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline semiconducting FeSi2 thin films were grown on (100) Si substrates of high resistivity by electron beam evaporation of amorphous Si/Fe ultrathin multilayers in an ultrahigh vacuum system, followed by conventional vacuum furnace (CF) or rapid thermal annealing (RTA). Infrared reflectance and transmittance measurements were employed for optical characterization of the samples at room temperature. The results indicate a direct transition at about 0.85 eV, an indirect transition at about 0.79 eV, and exponential band tail states within the band gap. The quality of the silicide is improved by increasing the annealing temperature from 600 to 800 °C in the RTA process, while the opposite is observed in the CF annealed samples. Transport measurements were performed on a typical β-FeSi2 layer of high quality grown by CF at low temperature. The measured mobility is about 97 cm2/V s and the hole concentration is about 1×1017 cm−3. The mobility is a factor of 10 higher and the hole concentration a factor of 100 lower than the corresponding published data, indicating a significantly improved quality of β-FeSi2 layers. Temperature-dependent measurements indicate that carrier transport is dominated by impurity conduction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362908
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of doping on electron traps in metalorganic molecular-beam epitaxial GaxIn1−xP/GaAs heterostructures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3127-3129 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of trap centers in GaxIn1−xP/GaAs epitaxial layers grown by metal-organic molecular-beam epitaxy (MOMBE) is investigated by deep-level transient spectroscopy (DLTS). The undoped epitaxial layers are characterized by a deep electron trap with an activation energy that depends on the Ga mole fraction and takes values in the range 820 to 875 meV. This trap center is suppressed by S and Si doping, and a new trap at 300–345 meV appears in the doped samples with a capture cross section of 1×10−13–2×10−15 cm2, while the trap concentration increases with the dopant concentration. Persistent photoconductivity (PPC), which is present in all samples investigated, appears to be suppressed only by Si doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105760
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  • 9
    Electronic Resource
    Electronic Resource
    Holographic recording in indium–oxide (In2O3) and indium–tin–oxide (In2O3:Sn) thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2459-2461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Holographic recording in polycrystalline indium–oxide (InOx) and indium–tin–oxide (ITO) thin films, grown by dc magnetron sputtering, is demonstrated. This recording, performed at relatively low optical power levels in the ultraviolet (UV) wavelength range (325 nm), exhibits very large coupling strength and a slow but dynamic behavior. The observed phenomena are attributed to localized photorefractive effects and appear to be independent of the electrical characteristics of the films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117497
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  • 10
    Electronic Resource
    Electronic Resource
    Low-temperature dc characteristics of S- and Si-doped Ga0.51In0.49P/GaAs high electron mobility transistors grown by metalorganic molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3162-3164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga0.51In0.49P/GaAs high electron mobility transistors (HEMTs) grown by metalorganic molecular beam epitaxy have been fabricated for the first time. The typical transconductance (gm) of devices of 1.3-μm gate length at 300 K is 110 mS/mm and is independent of donor type. At 100 K the dc characteristics of Si-doped devices remain almost unchanged, while there is a decrease of 55% in gm and in the drain-source saturation current (Idss) of the S-doped devices. The degradation of the S-doped HEMTs is attributed to "DX-like'' centers in the doped GaInP layer. All of the doped samples are characterized by a deep electron trap with an activation energy that takes values in the range 310–345 meV and causes persistent photoconductivity (PPC) in S-doped samples, while Si doping suppresses the PPC effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106729
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