ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Dielectric function spectra of strained InxGa1−xAs (x≤0.25) epilayers on GaAs are presented for the first time, together with spectra of relaxed layers of the same compositions. Critical point energies, obtained by line-shape fitting to second-derivative spectroscopic ellipsometry (SE) data, show an increase in the E1, E1+Δ1 splitting with strain, in agreement with theory using GaAs deformation potentials. SE is shown to be capable of determining layer thickness, composition, and strain in this alloy system.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106989
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