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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (50)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (50)
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  • Physics  (56)
  • 1
    Electronic Resource
    Electronic Resource
    Laser-induced free-carrier absorption in Si single crystal (1984)
    Springer
    Applied physics 33 (1984), S. 107-111 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The transmitted energy density in thin single Si crystal, wafers is measured atλ=1.06 μm as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm2. The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm2 energy density range are fitted with an Auger constant of 10−30 cm6s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617616
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  • 2
    Electronic Resource
    Electronic Resource
    Surface channeling of swift light ions (1984)
    Springer
    Applied physics 33 (1984), S. 121-131 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 78.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A fast computer code is developed to provide information about the trajectories of swift light particles incident on crystalline targets under surface channeling conditions. The approximations used in the model are tested by comparison of trajectory calculations with the MARLOWE simulation program. The simulation of experimental energy distributions allows discussing various inelastic energy loss models for the interaction of 150 keV protons with a nickel surface. The results suggest that plasmon excitations are not sufficient to account for the measured energy losses. It is found that the Oen-Robinson formula, including inelastic energy losses by single electron excitations in dense materials reasonably well applies to the reflection of light ions from metallic surfaces in channeling conditions. The measured light intensity emitted from 200 keV He+ reflected ions in various directions close to compact atomic surface rows is compared with the calculated reflection coefficient. The results suggest that most of the particles reflected in ionic state do not penetrate the target surface. Detailed comparison between light emission measurements and calculated reflection intensities, however, requires accurate modelling of the surface topography as well as of the deexcitation mechanisms involved in the surface reflection of light ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617618
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental and theoretical investigations into the origin of cross-contamination effects observed in a quadrupole-based SIMS instrument (1985)
    Springer
    Applied physics 38 (1985), S. 235-252 
    Details
    ISSN: 1432-0630
    Keywords: 07.75 ; 61.70 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The minimum-detection limits achievable in SIMS analyses are often determined by transport of material from surrounding surfaces to the bombarded sample. This cross-contamination (or memory) effect was studied in great detail, both experimentally and theoretically. The measurements were performed using a quadrupole-based ion microprobe operated at a secondary-ion extraction voltage of less than 200 V (primary ions mostly 8keV O 2 + ). It was found that the flux of particles liberated from surrounding surfaces consists of neutrals as well as positive and negative ions. Contaminant species condensing on the bombarded sample could be discriminated from other backsputtered species through differences in their apparent energy spectra and by other means. The apparent concentration due to material deposited on the sample surface was directly proportional to the bombarded area. For an area of 1 mm2 the maximum apparent concentration of Si in GaAs amounted to ∼5 × 1016atoms/cm3. The rate of contamination decreased strongly with increasing spacing between the bombarded sample and the collector. The intensities of backsputtered ions and neutrals increased strongly with increasing mass of the target atoms (factor of 10 to 50 due to a change from carbon to gold). The effect of the primary ion mass (O 2 + , Ne+, and Xe+) and energy (5–10keV) was comparatively small. During prolonged bombardment of one particular target material, the rate of contamination due to species not contained in the sample decreased exponentially with increasing fluence. In order to explain the experimental results a model is presented in which the backsputtering effect is attributed to bombardment of surrounding walls by high-energy particles reflected or sputtered from the analysed sample. The level of sample contamination is described by a formula which contains only measurable quantities. Cross-contamination efficiencies are worked out in detail using calculated energy spectra of sputtered and reflected particles in combination with the energy dependence of the sputtering yield of the assumed wall material. The experimental findings are shown to be good agreement with the essential predictions of the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616059
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  • 4
    Electronic Resource
    Electronic Resource
    Au gettering by Ne and Ar implantation in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 119-124 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66 ; 85.30 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The gettering efficiency for Au induced by Ne+ and Ar+ implantation has been studied. The depth distribution of gettered Au as a function of annealing temperature and dose of implanted Ne+ and Ar+ ions are presented. The experiment shows that the maximum efficiency of gettering occurs when the implantation doses are comparable with amorphization dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620641
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  • 5
    Electronic Resource
    Electronic Resource
    Si etching affected by ir laser irradiation (1985)
    Springer
    Applied physics 37 (1985), S. 117-119 
    Details
    ISSN: 1432-0630
    Keywords: 82.50 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon was etched in an aqueous solution of sodium hydroxide under ir laser irradiation. Two types of lasers were used, a Nd:YAG laser with a wavelength of λ=1.06 μm and a CO2 laser with λ=10.6 μm. Small-size blind holes, through holes and reliefs were formed on a Si target, and even a special type of hole can be formed with help of a CO2 laser, namely a blind hole with a hillock in its center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618861
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  • 6
    Electronic Resource
    Electronic Resource
    Theoretical characterisation of a superlattice avalanche photodiode (1987)
    Springer
    Applied physics 42 (1987), S. 173-177 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 72.40 ; 78.55 ; 79.20 ; 85.40 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A superlattice avalanche photodiode using III–V materials is expected to be used in long-distance fiberoptic communication systems in the 1.3 to 1.55 μm wavelength range. Theoretical studies have been made on the effective ionization rates of electrons and holes of the device, I–V characteristic and the frequency response characteristic of the Al x Ga1−x As/GaAs superlattice p+-i-n+ structure. It is observed that theα/β ratio of the device increases with the field and the bandwidth of the response curve increases with decrease in the dc multiplication gain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620596
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  • 7
    Electronic Resource
    Electronic Resource
    Secondary ion emission from binary Fe-Cr, Fe-Ni, Cr-Ni and ternary Fe-Cr-Ni alloys: Chemical and physical matrix effects (1987)
    Springer
    Applied physics 42 (1987), S. 239-243 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 07.80 ; 07.75
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Secondary ion emission from Fe-Cr, Fe-Ni, Cr-Ni binary alloys and Fe-Cr-Ni ternary alloys (concentration range 10–90% of the alloying element) bombarded with 3 keV Xe+ ions has been investigated as a function of concentration of the studied element in the multicomponent system. The linear increase of the secondary ion intensity with concentration of the element in the sample was found only for a low-concentration region. There are pronounced nonlinearities in the medium and high-concentration regions. A possible explanation for such nonlinearities based on chemical and physical matrix effects is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620607
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  • 8
    Electronic Resource
    Electronic Resource
    Measurement ofK αcross sections and fluorescence yields for elements in the range 42≦Z≦57 using radioisotope X-ray fluorescence (1987)
    Springer
    Applied physics 43 (1987), S. 71-73 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract TheK α x-ray fluorescence (XRF) cross sections have been experimentally determined for elements in the range 42≦Z≦57 at excitation energy of 59.54keV associated with gamma rays of Am-241 radioisotope. In addition, measurements of XRF yields of theK shell (w k) for the same elements at the same excitation energy have also been carried out. Our measurements were shown to agree with theoretical calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615209
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  • 9
    Electronic Resource
    Electronic Resource
    Electron ionization rate in III–V ternary semiconductors (1987)
    Springer
    Applied physics 43 (1987), S. 105-109 
    Details
    ISSN: 1432-0630
    Keywords: 72.15 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Theoretical calculations are presented for the ionization rate of electrons in III–V ternary semiconductor compounds considering alloy scattering and carrier-carrier interaction, in addition to optical phonon scattering and ionization scattering. However, alloy scattering is found to be a weak interaction. Fairly good agreement is obtained for Ga1−x In x As withx=0.14 and 0.53 with the experimental results and for Ga0.5 Al0.5 As with the existing theoretical result which used an indirect method. The alloy scattering potential has been taken in the form of energy band-gap difference. The calculations can be used for any ternary semi-conductor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617961
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  • 10
    Electronic Resource
    Electronic Resource
    A model of sputtering from spikes (1982)
    Springer
    Applied physics 28 (1982), S. 175-178 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple model of sputtering from spikes is described based upon the solution of a general heat conduction equation for spherical symmetry. The model accounts for many anomalies observed in energy spectra of sputtered atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617983
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  • 11
    Electronic Resource
    Electronic Resource
    Experimental and computer study of the spatial distributions of particles sputtered from polycrystals (1989)
    Springer
    Applied physics 49 (1989), S. 299-304 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The spatial distributions of the sputtered particles were simultaneously and separately studied by experiment and computer simulation for 30 keV argon ion bombardment of copper in a wide range of primary-ion incidence angles (0°–86°). The distributions were found to be similar. The discrepancies between the data obtained and the predictions of the Roosendaal-Sanders analytical theory are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616858
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  • 12
    Electronic Resource
    Electronic Resource
    On the inelastic-loss approximation for keV-energy ion collisions in solids (1981)
    Springer
    Applied physics 24 (1981), S. 121-126 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Inelastic energy-loss in a single collisionT e and related stopping cross-sectionT e based on the Firsov model are evaluated for different screening functions in the elastic interaction potentials. Various approximations ofT e andS e for keV-ions in solids are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00902267
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  • 13
    Electronic Resource
    Electronic Resource
    Frequency breakdown in semiconductors (1980)
    Springer
    Applied physics 22 (1980), S. 95-99 
    Details
    ISSN: 1432-0630
    Keywords: 77.20 ; 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effect of the frequency of the applied voltage on the breakdown of semiconductors is investigated. Unlike earlier observations, our experiment yields, in some cases, a breakdown voltage versus frequency curve which is similar in nature to the high-frequency breakdown characteristics in gas devices wherein the breakdown voltage shows a minimum at a certain frequency. A possible theoretical explanation for the above behaviour of semiconductor devices based on dielectric heating is given, which is in fair agreement with the observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00897939
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  • 14
    Electronic Resource
    Electronic Resource
    Sputtering of Cu and Zn atoms from elemental and alloy targets (1980)
    Springer
    Applied physics 23 (1980), S. 89-92 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The energy distributions of Cu and Zn atoms sputtered from elements and CuxZn1-x alloys (x=0.80, 0.24) with a 6 keV Ar+ beam have been measured. It was found that the collision-cascade theory properly described the flux of sputtered atoms. From the spectra the binding energies of Cu and Zn atoms in the elemental and alloy surfaces were determined. The collision-cascade theory and the experimentally adjusted values of the binding energies allowed for calculation of the total and partial sputtering yields, and the equilibrium surface composition of the ion bombarded alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899575
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  • 15
    Electronic Resource
    Electronic Resource
    Computer simulation of fast recoil ejection from single crystal surfaces (1981)
    Springer
    Applied physics 25 (1981), S. 239-248 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The computer simulation program MARLOWE is used to analyze the most probable surface recoil processes leading to ejection of atoms from (001) gold surfaces subsequent to the irradiation with 20 keV argon atoms. The occurence of two-and threedimensional mechanisms resulting from high-energy recoils involving one and two atomic layers is discussed for atoms ejected in a direction parallel to the plane of incidence. Generally, a close correspondence is found between the mechanisms involved and the features in the energy distributions. The occurence of direct and deflected recoils is confirmed, as well as mechanisms involving the generation of displacements in the two first atomic layers. The dependence of these mechanisms on the conditions of incidence and the ejection direction is investigated. It is suggested that three-dimensional effects, although dominating, mainly contribute to the background in the energy distributions. The intensities in the features in the energy distributions were found to be strongly influenced by shadowing; affecting both the one-and two-layer processes. The influence of thermal vibrations, surface defects and impurities is briefly examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00902977
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  • 16
    Electronic Resource
    Electronic Resource
    Depth of origin of sputtered atoms (1981)
    Springer
    Applied physics 25 (1981), S. 307-310 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 68.55 ; 61.80 ; 34
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Estimates are given for the distribution of the depth of origin of sputtered atoms in the low-fluence limit, as well as the corresponding distribution of atoms sputtered into a given energy interval. The former distribution is well described by an exponential profile, with the characteristic depth being consistent with previous results. The latter distribution is characterized by an energy-dependent depth scale and a shape that varies from exponential at low sputtered-atom energies to inverse-power form at higher energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00902988
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  • 17
    Electronic Resource
    Electronic Resource
    Trapping and reflection coefficients for3He in Ni at oblique incidence (1983)
    Springer
    Applied physics 31 (1983), S. 37-44 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The areal density and the depth distribution of3He trapped in Ni as a function of the bombarding fiuence was measured in the energy range of 1–25 keV and at angles of incidence between 0 and 85° using nuclear reaction analysis. At fluences below saturation a linear relation is found between the areal density and the fiuence. From its slope the trapping and reflection coefficients can be determined. The experimental data for trapping and reflection coefficients and for the depth profiles were compared with computer simulation results from the TRIM program. To reduce uncertainties in the absolute values of the experimental trapping coefficients, they were normalized to the TRIM values at normal incidence. The dependence of the measured reflection coefficient on the angle of incidence between 0 and 80° shows good agreement with the calculated data for incident energies from 3 to 25 keV, but for 1 keV the measured reflection coefficients are higher than the calculated ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617186
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  • 18
    Electronic Resource
    Electronic Resource
    Core electron excitation spectra of diamond, graphite, and glassy carbon (1984)
    Springer
    Applied physics 34 (1984), S. 35-39 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 71.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Low-energy electron energy loss spectra in theC(1s) core electron excitation region have been measured in diamond, graphite and glassy carbon in the non-differentiated form. The background subtractedN(E) spectrum has been proved to reflect the density-of-states (DOS) of the conduction band well, and the conduction band structures of these materials have been elucidated. The energy positions of the symmetry points in their conduction bands have been determined from the second-derivative spectra, which were obtained by numerical differentiation of the measuredN(E) spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617572
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  • 19
    Electronic Resource
    Electronic Resource
    Energy distributions of low energy H ions backscattered from graphite, stainless steel, and molybdenum (1982)
    Springer
    Applied physics 27 (1982), S. 263-268 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Energy distributions of H+ and H− backscattered from graphite, stainless steel and molybdenum were measured for low incident beam energies (150∼1500 eV). The energy distributions of H− resembled that of H+, while the intensity ratio of H− to H+ varied from material to material and with the incident proton energy. A peak in the energy distribution moved to the “cutoff” energy with decreasing incident energy, which can be attributed to an increase in nuclear stopping cross section and a decrease in electronic stopping cross section. The ratio of the peak energy to the incident energy is related to the reduced energy ɛ of incident beam independent of target materials in the measured region (0.03〈ɛ〈 3.3).
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    URL: http://dx.doi.org/10.1007/BF00619090
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  • 20
    Electronic Resource
    Electronic Resource
    Contribution to time-resolved enhanced chemical etching and simultaneous annealing of ion implantation amorphized silicon under intense laser irradiation (1985)
    Springer
    Applied physics 38 (1985), S. 109-115 
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    ISSN: 1432-0630
    Keywords: 82.50 ; 82.65 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Surfaces of single-crystal silicon wafers are amorphized by high-dose phosphorous ion implantation. These surfaces of the wafers, immersed in concentrated KOH, are laser-chemically etched by pulse irradiation of a ruby laser. Simultaneously, the remaining parts of the amorphous layer are annealed. The time dependence of the etching process enhanced during pulse irradiation is recorded and analysed. Reasons for the etching rates which differ between amorphous and single-crystal silicon are given on the basis of experimental and numerical results.
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    URL: http://dx.doi.org/10.1007/BF00620461
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  • 21
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    Laser fluorescence measurements of the flux density of titanium sputtered from an oxygen covered surface (1985)
    Springer
    Applied physics 38 (1985), S. 131-138 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced fluorescence spectroscopy is successfully used for the determination of the flux of ion-sputtered wall material. If the surface is clean, the majority of the particles are found in the groundstate multiplet of the neutral atoms. For an oxidized surface, however, excited and ionized states constitute a considerable fraction of the sputtered particle flux. This is investigated in detail in this paper by measuring population densities and velocity distributions of some selected atomic and ionic states of titanium. The respective flux densities and fractions of the total flux density are given, too. A criterion is found which may help to distinguish a clean from a heavily oxidized surface.
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    URL: http://dx.doi.org/10.1007/BF00620464
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  • 22
    Electronic Resource
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    On the fluence dependence of the sputtering yield for low-energy noble gas ions (1982)
    Springer
    Applied physics 29 (1982), S. 133-139 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 68.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fluence dependence of the sputtering yield has been studied on amorphous silicon under uhv conditions with 0.5 to 5keV Ar+ using the KARMA technique (Kombinierte Auger/Röntgen Mikro-Analyse). It allows to measure simultaneously the surface composition, the differential sputtering yield, and the total amount of implanted gas. For all energies, the yield increases initially and reaches saturation after the removal of a layer the thickness of which is closely correlated to the ion range. Gas implantation as a cause for these fluence effects can be ruled out by quantitative analysis. The relative yield increase is found to be larger for low energies than for higher ones. Both these findings can be qualitatively explained by a simple damage collection model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617769
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  • 23
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    High-resolution electron microscopy of Si cones formed on Ar+-bombarded Si wafers (1988)
    Springer
    Applied physics 46 (1988), S. 313-321 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Conical Si projections generated on Si wafers bombarded with obliquely incident Ar+ ions were studied by high-resolution transmission electron microscopy. The cones were composed of an [111]-oriented bulk phase covered with a disordered thin layer, but the bulk phase was not perfectly ordered, containing an amorphous domain underneath the outermost area. Such a multi-phase structure is inexplicable in terms of ion erosion, suggesting interplay of the redeposition of sputtered Si atoms on the bombarded area with the ion-erosion process so as to promote cone evolution. The cones were also characterized by the development of web-like platelets at their acute angles, an indication of a crystal growth process involved in the surface phenomenon observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01141598
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  • 24
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    Energy and spatial redistributions of the particle flux resulting from its interaction with the scattering center (1982)
    Springer
    Applied physics 28 (1982), S. 189-194 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Energy and intensity distributions of both projectiles and recoil atoms on the plane behind the scattering center at finite distance are calculated for different projectile-to-target mass ratio and different projectile energies. The projectile energy and intensity have been found to be double-valued or three-valued functions of the distance from the collision epicenter. At the same time, the recoil energy and intensity have proved to single-valued and double-valued functions of the distance from the collision epicenter for parallel and divergent projectile fluxes, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617985
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    Al reaction with SiO2 an auger electron spectroscopy and energy loss spectroscopy study (1982)
    Springer
    Applied physics 28 (1982), S. 247-250 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60 ; 79.20 ; 82.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Evidence for a reaction between aluminium and SiO2 film is presented using Auger electron spectroscopy (AES) and low-energy electron-loss spectroscopy (ELS) techniques. This reaction is studied “in situ” during the manufacture of metal insulator semiconductor devices (MIS), under ultra-high vacuum conditions (UHV). A reduction of the SiO2 film upon aluminization occurs, even at room temperature, giving rise to a complex interface.
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    URL: http://dx.doi.org/10.1007/BF00618702
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    Laser photochemical etching of silicon (1989)
    Springer
    Applied physics 49 (1989), S. 533-542 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 81.60 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Argon laser induced chemical etching of single crystal silicon with chlorine is studied. Etch rates are determined as a function of gas pressure, crystal orientation, laser power and wavelength. Analysis of gas phase and surface products by Fourier transform IR and X-ray photoelectron spectroscopy are used to probe the reaction mechanism. Contrary to previous reports, no thermally enhanced etch rate is observed for Si (111) and the presence of oxide on the surface is found to inhibit etching even at high laser power.
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    URL: http://dx.doi.org/10.1007/BF00617021
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    Cathode etching rate in abnormal glow discharges (1989)
    Springer
    Applied physics 48 (1989), S. 573-574 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 52
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The cathode etching rate in an abnormal glow discharge was calculated taking into account sputtering both by ions and energetic neutrals originating in cathode dark space due to the charge exchange collisions. The advantage of the model proposed is the evaluation of energetic neutral scattering by the sputtering gas.
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    URL: http://dx.doi.org/10.1007/BF00617859
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    Brightness enhancement of slow positron beams (1980)
    Springer
    Applied physics 23 (1980), S. 189-191 
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    ISSN: 1432-0630
    Keywords: 78.70 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The brightness of slow positron beams can be enhanced significantly by repeated stages of moderation, acceleration and focusing. Presently available data suggest that the source spot area should decrease by 10−4 after each stage with only a modest loss of intensity. Beams with very small angular divergence, which could be made with this technique, would be useful for characterizing surfaces by positron diffraction and microscopy. Using such beams it is possible to envision the study of new exotic systems such as thee +-e − plasma and the positronium molecule.
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    URL: http://dx.doi.org/10.1007/BF00899716
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    A search for a thermal spike effect in sputtering (1983)
    Springer
    Applied physics 30 (1983), S. 83-86 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The temperature dependence of the sputtering yield was measured for lOOkeV per atom bombardment of silver with molecular and atomic antimony ions. No exponential increase of the yield was found in the temperature range from 25° to 775 °C, although a pronounced nonlinear effect is observed when the yield of these projectiles is compared,Y(Sb 2 + )≈ 1.5×[2Y(Sb+)]. We conclude that there is no influence of the lattice temperature on collision spikes.
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    Thresholds for impact ionisation in InSb at 77K (1981)
    Springer
    Applied physics 26 (1981), S. 157-163 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 79.20
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    Notes: Abstract The thresholds in energy for 5 different impact ionisation processes in InSb at 77K were calculated on the basis of a critical review of the available bandstructure data for largerk values. An accurate threshold value of 243 meV ± a few meV is given for the main process. It is shown that production of light holes by impact ionisation is highly improbable. It is suggested that double ionisation and light hole initiated ionisation may be equally important in interpreting quantum efficiency data. Impact ionisation by L-band electrons may contribute significantly to the avalanche in Gunn domains, explaining the rapid quenching of the latter.
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    Trapping and reflection coefficients for deuterium in graphite at oblique incidence (1984)
    Springer
    Applied physics 33 (1984), S. 265-268 
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    ISSN: 1432-0630
    Keywords: 79.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Trapping and particle reflection coefficients for 0.4–10keVD on graphite have been measured for angles of incidence 0≦α≦85° by determining the areal density of implanted D as a function of the implanted fluence. The experimental data are compared to computer calculations with the TRIM-program. The agreement between measurement and calculation is good.
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    Depth profiling by ion-beam spectrometry (1982)
    Springer
    Applied physics 27 (1982), S. 183-195 
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    ISSN: 1432-0630
    Keywords: 79.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A procedure is developed for determining the stoichiometry of a sample as function of depth from ion-beam analysis energy spectra. The approach is in principle equally applicable to back scattering experiments, experiments involving nuclear reactions with known cross sections and experiments combining these techniques. The procedure is especially suitable for routine computer evaluation of energy spectra. It is more straightforward and/or involves less rigid assumptions and approximations than alternative approaches. If all elemental signals are measured, an accurate beam dose is not needed. The limitations are basically those inherent to ion beam analysis in general.
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    URL: http://dx.doi.org/10.1007/BF00619079
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    A simple formula for low-energy sputtering yields (1985)
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    Applied physics 36 (1985), S. 37-42 
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    ISSN: 1432-0630
    Keywords: 79.20
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    Notes: Abstract A simple formula for low-energy sputtering yields of elemental targets is presented. The formula follows directly from Sigmund's theory but includes a modified form of the functionα(M t /M p ) and an accurate expression for the nuclear stopping cross section. Good agreement with experimental results is obtained for the projectiles Ne, Ar, Kr sputtering not too reactive surfaces at energies ≲1 keV. Further experiments are suggested as well as theoretical work concerning the meaning of the surface binding energy and the effect of the surface on the sputtering process in general.
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    On the velocity distribution of excited Fe-atoms by sputtering of iron (1982)
    Springer
    Applied physics 29 (1982), S. 53-55 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 32.50
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    Notes: Abstract From the velocity distribution of excited sputtered particles detailed information on the excitation process can be obtained. In the present paper the first direct measurement of velocity distribution of excited atoms sputtered from a metal target is presented. The irradiation of the Fe-target was performed with 10keV Ar+-ions. The sputtered atoms were detected using pulsed laser induced fluorescence (LIF). The sputtered Fe atoms in the metastable statea 5 F 5 at 0.86 eV shows a much broader distribution, than found for the ground-state atoms, but no energy threshold, implied in the statistical excitation models, was found.
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    URL: http://dx.doi.org/10.1007/BF00632425
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    Computer simulation of two-component target sputtering (1985)
    Springer
    Applied physics 37 (1985), S. 95-108 
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    ISSN: 1432-0630
    Keywords: 79.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The TRIM SP computer simulation program, which is based on the binary collision approximation, is applied to sputtering of two component targets. The topics discussed in this paper are: contribution of different processes leading to sputtering, total and partial sputtering yields, surface compositions at stationary conditions, sputtering of isotopic mixtures, angular and energy distributions and the escape depth of sputtered particles. Targets investigated are TaC, WC, TiC, TiD2, and B (as an isotope mixture), bombarded by the noble gas ions and D (in the case of TiD2). Comparison with experimental data and calculated results show good agreement demonstrating that collisional effects are sufficient to describe the experimental data in the examples investigated.
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    Application of auger ewlectron depth profile analysis to thin film interdiffusion studies (1987)
    Springer
    Applied physics 42 (1987), S. 219-226 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 68.60 ; 79.20
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    Notes: Abstract Because of its good depth resolution, the Auger electron depth profile analysis allows to investigate diffusion phenomena in thin films directly. Complicated calibration procedures, however, are needed to correct for the matrix effects inherent in the Auger method, particularly artefacts due to the sputtering process. In this paper, two types of thin-film systems are presented in order to determine diffusion coefficients from depth profiles: double-layer and periodic multi-layer film structures. Compared to the double-layer films, the multi-layer structure has the advantage of less stringent requirements on depth resolution and allows to detect smaller diffusion effects. Finally, it is shown how grain boundary and bulk diffusion data can be extracted separately from the composition profiles.
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    XRF induced by PIXE: Comparison with radioisotope XRF (1987)
    Springer
    Applied physics 42 (1987), S. 327-329 
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    ISSN: 1432-0630
    Keywords: 79.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract XRF induced by PIXE (XRF-PIXE) using silver as a primary target was compared with a standard radioisotope XRF system using Cd-109 as a primary exciting source, for the analysis of single-element thin standards. The sensitivity of the two methods were determined for elements from Cl to Mo. XRF is found to be more sensitive for elements from Cl to Mn, whereas XRF-PIXE is found to be more suitable for elements from Fe to Mo. Both techniques can be considered as complementary to each other.
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    A study of electronic states near the interface in ferroelectric-semiconductor heterojunction prepared by rf sputtering of PbTiO3 (1982)
    Springer
    Applied physics 28 (1982), S. 161-166 
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    ISSN: 1432-0630
    Keywords: 73.20 ; 73.40 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Interface states in the ferroelectric-semiconductor junction have been investigated from analyses of DLTS andC-V data. Two trap levels are located at 0.21 and 0.36 eV below the conduction band near the silicon side of the interface in the MFS (Metal-Ferroelectric-Semiconductor) structure. The interface states density has been drastically reduced by putting an oxide layer between ferroelectric and semiconductor with certain heat treatment in H2 atmosphere at 500 °C. It has been found that the MFMOS (Metal-Ferroelectric-Metal-Oxide-Semiconductor) structure shows the least interface states density (less than 1011cm−2eV−1) with the maximal dielectric constant of PbTiO3 thin films.
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    A time-of-flight study on the nanosecond laser induced etching of Cu with Cl2 at 308 nm (1988)
    Springer
    Applied physics 47 (1988), S. 183-192 
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    ISSN: 1432-0630
    Keywords: 66 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Chemical etching of Cu is studied using Cl2 and a ns pulsed UV laser at 308 nm. At Cl2 pressures in the range of 10−6–10−4mbar and a laser fluence up to 0.82 J/cm2 the velocity distributions of the ejected species are determined. CuCl and Cu3Cl3 are the main products. The time-of-flight spectra of these particles can be fitted with Maxwell-Boltzmann distributions at high temperatures viz. 1750〈T〈6000 K. Starting with a clean Cu sample the system evolves to a steady state situation in which a considerable amount of Cl has diffused into the bulk. The chlorinated Cu layer has a pronounced influence on the coupling of the laser beam into the substrate, thereby determining the amount of particles desorbed and their time-of-flight distributions. A model is presented to explain the results.
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    Noise characteristics of a superlattice avalanche photodiode (1989)
    Springer
    Applied physics 48 (1989), S. 331-334 
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    ISSN: 1432-0630
    Keywords: 72.70 ; 79.20 ; 85.60
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The noise generated due to randomness of multiplication process in the avalanche region of an Al x Ga1−x As/GaAs quantum well p+-i-n+ structure has been studied. The paper presents a quantitative evaluation of the noise performance of the superlattice APD which has not been done so far. Further, useful design data for low noise structure is given.
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    Ion energies at the cathode of the DC planar magnetron sputtering discharge (1989)
    Springer
    Applied physics 49 (1989), S. 269-272 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 52
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The energy distribution of the ions striking the cathode of the dc planar magnetron system was measured over a range of the typical sputtering conditions (magnetic field of 0.07–0.13 T, argon pressure of 0.01–10 Pa, discharge voltage of 250–600 V). The results obtained allow us to conclude that the major part of the incident ion flux originates in the cathode fall region. The theoretical model developed in terms of mobility theory makes it possible to evaluate the cathode fall voltage and its dependence on the sputtering conditions. It was found that the normalized integral form of the incident ions, energy spectrum is practically independent of the sputtering discharge parameters.
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    Distribution and heat-treatment migration studies of Cr implanted GaAs by SIMS (1980)
    Springer
    Applied physics 23 (1980), S. 21-24 
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    ISSN: 1432-0630
    Keywords: 65 ; 68 ; 79.20
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    Notes: Abstract Depth profiles of 190 keV Cr implanted-GaAs have been measured by SIMS analysis. The as-implanted Cr profiles are approximately Gaussian with good agreement between theory and experiment on the projected range. A fast migration of Cr is observed after heat treatment under encapsulation, and even as soon as the silicon nitride film is deposited. There is no evidence for Cr precipitation, even in the case of the largest implanted dose (1015 cm−2).
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    Investigations of near region of surface of soda-lime-silica glass and lithium-silica glass with secondary ion mass spectrometry (1980)
    Springer
    Applied physics 22 (1980), S. 233-236 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 81
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    Notes: Abstract Investigations on the layers near the surface of different glasses by means of secondary ion mass spectrometry are described. Both enrichment- and depletion zones can be demonstrated. The results are discussed on the basis of the model on corrosion behaviour by Hench.
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    The velocity distribution of sputtered Zr atoms for irradiation at normal and oblique angle of incidence (1984)
    Springer
    Applied physics 33 (1984), S. 235-241 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 32.80
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    Notes: Abstract Laser-induced fluorescence by means of a cw dye laser has been used for investigating the velocity distribution of sputtered Zr atoms in the ground state. In order to evaluate the data the excitation probability of the atoms in the observation volume has been measured. The velocity distribution of Zr atoms for irradiation with Ar+-ions as well as light ions at normal and oblique angle (70°) of incidence is presented.
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    A semiempirical formula describing the recoil yield in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 161-167 
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    ISSN: 1432-0630
    Keywords: 34 ; 79.20
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    Notes: Abstract Krypton ions in the energy range 20–300 keV are used to generate recoiling atoms in silicon from thin layers evaporated on its surface. The recoil yields and the impurity distributions in the substrate have been measured as a function of several parameters (energy, thickness of the layer, incident dose). The results are used to propose a new formulation of the recoil yield based on the possibility, for both projectiles and recoiling atoms, to remove impurities previously introduced in silicon. The calculation fits very well the experimental results using displacement energies close to the generally admitted values
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    Reflection of low-energy hydrogen from solids (1985)
    Springer
    Applied physics 38 (1985), S. 123-129 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 52.40Hf
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The Monte Carlo Simulation Program TRIM is used to calculate particle and energy reflection coefficients as well as energy and angular distributions of reflected H, D, and T. To account for binding effects at the target surface a planar potential is applied. This binding potential reduces the reflection below an energy of a few eV.
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    MITATT mode in DDR heterostructure Impatt (1987)
    Springer
    Applied physics 42 (1987), S. 303-309 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 85.30
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    Notes: Abstract Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p+-p2-p1-n1-n2-n+ where impact ionisation and tunneling takes place in the p1-n1 region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.
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    Hot-electron drift velocity in III–V semiconductors under the condition of impact ionization (1987)
    Springer
    Applied physics 43 (1987), S. 53-60 
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    ISSN: 1432-0630
    Keywords: 72.15 ; 79.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A calculation has been carried out for the drift velocity of electrons in the highfield region under the condition of impact ionization in III–V semiconductor compounds. The energy-balance equation of the one-electron model has been solved considering alloy scattering and carrier-carrier interaction, in addition to optical phonon and ionization scattering. Fairly good agreement is obtained for GaAs with the available experimental and Monte-Carlo results. Graphs for the high-field drift velocity has also been plotted for Ga1−x InxAs (x = 0.53) at different ratios of ionization mean-free path and optical phonon mean-free path. The plot of high-field drift velocity versus ionization rate reveals that the high-field drift velocity strongly depends on the ionization rate of carriers, and vice versa.
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    Neutralization of multiply charged ions at a surface (1987)
    Springer
    Applied physics 44 (1987), S. 31-41 
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    ISSN: 1432-0630
    Keywords: 79.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report on emission processes induced by particle-solid interaction involving ions with a large potential (i.e., high ion charge state) and low kinetic energy. After an introduction into existing neutralization models for ion scattering at a metal surface a detailed discussion on the electron emission processes is presented. The number of electrons emitted per incident ion is shown to be proportional to the potential energy only within a restricted parameter field involving charge state and ion velocity. The kinetic energy distribution of emitted electrons is dominated by low-energetic electrons (≦30 eV), while inner shell holes of the projectile ion can initiate high-energetic characteristic Auger electrons. The presence of inner shell holes is also of importance for the charge state of highly charged ions being scattered at surfaces whereas normally the charge state distribution of scattered ions depends on the impact parameter only. The influence of the primary ion charge state on the sputtering yield of insulating surfaces is seen for the charge state of sputtered particles, whereas the total sputtering yield seems to be insensitive. This question is still subject to controversy, however. Photon emission dependent on the charge state of the impinging ion has been observed up to now only for extremely highly charged ions as hydrogenlike Ar or Kr.
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    High-resolution electron microscopy of Si cones formed on Ar+-bombarded Si wafers (1988)
    Springer
    Applied physics 46 (1988), S. 313-321 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Conical Si projections generated on Si wafers bombarded with obliquely incident Ar+ ions were studied by high-resolution transmission electron microscopy. The cones were composed of an [111]-oriented bulk phase covered with a disordered thin layer, but the bulk phase was not perfectly ordered, containing an amorphous domain underneath the outermost area. Such a multi-phase structure is inexplicable in terms of ion erosion, suggesting interplay of the redeposition of sputtered Si atoms on the bombarded area with the ion-erosion process so as to promote cone evolution. The cones were also characterized by the development of web-like platelets at their acute angles, an indication of a crystal growth process involved in the surface phenomenon observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01210352
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