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  • Articles  (201)
  • Chemistry  (201)
  • Inorganic Chemistry
  • Surface physics, nanoscale physics, low-dimensional systems
  • 2015-2019
  • 1990-1994  (201)
  • 1915-1919
  • Electrical Engineering, Measurement and Control Technology  (201)
  • 1
    Electronic Resource
    Electronic Resource
    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040101
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  • 2
    Electronic Resource
    Electronic Resource
    Encapsulated alkaline earth metallocenes. 3: Structural influences on phase transformations alkaline earth complexes (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 1-8 
    Details
    ISSN: 1057-9257
    Keywords: Alkaline earth ; Calcium ; Ligand flexibility ; Magnesium ; Melting point ; Metallocene ; Phase transformation ; Volatility ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Reaction of two equivalents of KCp3i (Cp3i ≡ 1,2,4-(i-Pr)3C5H2) with MgBr2 in Et2O produces the base-free metallocene (Cp3i)2Mg in high yield; the similarly prepared organocalcium complex (Cp3i)2Ca, although initally isolated as an oil, forms a crystalline solid on standing for several months. Crystals of (Cp3i)2 CA are tetragonal, space group P42/n, with a = 18.147(4), c = 15.996(4) Å, Å and Dcalc = 1.066 g cm-3 for Z = 8. Lease-squares refinement based on 2044 reflections led to a final R-value of 0.072. The complex possesses a metallocene geometry that is slightly bent; the average Ca-C distance is 2.62(2) Å and the right centroid-Ca-ring centroid angle is 169.7°. Comparison of these complexes with previously reported alkaline earth metallocenes suggests that the volatility of the metallocenses depends primarily on the degree of aggregation in the solid state, whereas the melting point of the nonomeric compounds varies with the asymmetry and ligan flexibility in the complex.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040102
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  • 3
    Electronic Resource
    Electronic Resource
    Langmuir-Blodgett films of indandione-l,3 pyridinium betaine. II: Molecular structure and properties of monolayers; simulation and optical absorption data (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 27-41 
    Details
    ISSN: 1057-9257
    Keywords: Amphiphilic indandione-1,3 pyridinium betaine derivatives ; Langmuir-Blodgett monolayers ; Monolayer spectral characteristics ; Simulation of molecular structure ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The molecular structure and optical properties of a monolayer at the air/water interface of novel amphiphilic derivatives of indandione-1,3 pyridinium betaine (IPB) with different lengths of the aliphatic tail, namely C1lIPB and C17IPB, have been studied using optical absorption techniques and computer simulation approaches.The compression π-A isotherm of the C17IPB monolayer and computer simulation of its molecular structure show that there may exist two energetically stable molecular configurations, one with antiparallel orientation of the dipole moments of the C17IP ‘heads’ in the low-pressure region at π = 5-32 mN m-1 and the second (after a distinct phase transition at π = 33 mN m-1) with parallel orientation of the dipoles, with different tilt angles and areas per molecule. For C11IPB only the first structural phase is observable.The compression-induced changes in spectral characteristics of the two structural phases go in diametrically opposite directions. In the low-pressure phase compression induces a red shift and an increase in intensity of the S1 absorption band, while in the high pressure phase a blue shift and a decrease in the intensity of this band are observed. These spectral changes correlate reproducibly with the compression π-A isotherms. Measurements of absorption dichroism confirm the change in the tilt angle at the phase transition pressure. The compression-induced spectral changes have been substantiated by the results of quantum chemical calculations.
    Additional Material: 16 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040105
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  • 4
    Electronic Resource
    Electronic Resource
    Electron beam and X-ray resists (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 139-153 
    Details
    ISSN: 1057-9257
    Keywords: X-ray resists ; Electron beam ; Acrylate and methacrylate polymers ; Polysulphones ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The optimisation of the lithographic performance of negative-working electron beam resists is developed through consideration of the radiation chemistry of crosslinking of representative materials, typically epoxy-functionalised polymers and polystyrene and its derivatives. Similarly, the lithographic behaviour of positive-working systems based on radiation-induced chain scission reactions is discussed with reference to acrylate and methacrylate polymers and polysulphones. The difficulties encountered in devising desirable working systems based on novolacs are considered and contrasted with the promise offered by recent developments arising from the extension of chemical amplification techniques to the electron beam lithographic domain.
    Additional Material: 15 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040208
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular image-processing devices based on chemical reaction systems. I: General principles for implementation (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 179-190 
    Details
    ISSN: 1057-9257
    Keywords: Molecular computing ; Molecular neurocomputer ; Molecular image-processing devices ; Computational complexity ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Potentialities for implementing simple neural information-processing devices based on chemical and biochemical dynamical media are discussed. Pilot ‘hardware’ models of neural molecualr devices that able to perform image-processing operations were constructed.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040302
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  • 6
    Electronic Resource
    Electronic Resource
    Artifice and artefacts, 100 essays in materials science. Robert W. Cahn. Institute of Physics Publishing, Bristol, ISBN 0 7503 0152 X xiii + 365 pp. £19.95 or $39.90 (paperback) (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 233-233 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040307
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  • 7
    Electronic Resource
    Electronic Resource
    Dynamics of impurity-related optical switching in CdS near the band edge (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 41-49 
    Details
    ISSN: 1057-9257
    Keywords: Front optical switching ; Optical non-linearities impurities ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We present a dynamic theory related to experiments on the induced transmission of doped CdS crystals under pulsed laser excitation at 2 K at frequencies just below the band gap. Numerical simulations of the optical switching front which describes the non-linear spatio-temporal dynamics of the switching process from low to high transmittivity and back are performed for two different two-level models. These are associated with two different bleaching mechanisms of the acceptor-conduction band transition.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030107
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  • 8
    Electronic Resource
    Electronic Resource
    Anisotropy of dissolution and microrelief of II-VI semiconductor compound surfaces (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 67-72 
    Details
    ISSN: 1057-9257
    Keywords: Anisotropy ; Dissolution ; Microrelief ; II-VI semiconductor compounds ; Light figures ; Etching ; Electron beam lasers ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The shape, crystallographic orientation and size of microrelief elements of various surfaces of CdS, ZnSe and ZnO monocrystals after chemical etching have been studied. When illuminated with a focused laser beam, the microrelief creates a symmetric light pattern, or light figures, on the opposite surface whose shape corresponds to the crystal symmetry.The effects of the dissoltion rate and etching time on the form, size and angles of the microrelief elements in the temperature interval from 263 to 333 K were investigated. During etching, laser light was also used to convert the process of selective etching into a polishing process. To elucidate the relationship between the crystallographic orientation of the microrelief elements and the dissolution anisotropy, mean etching rates were determined and polar diagrams of resistance to dissolution were constructed for {1120} and {0001} by the Gross method. The relation between the kinetics of dissolution and the structure of the chemical bonds is discussed.The light figures formed by the surface microrelief enabled us to carry out the approximate orientation of semiconductor planes and solid samples. In the early stages of dissolution one may determine the density and distribution of the microscopic etch pits. The microrelief created on the side surfaces and the ‘fully reflected’ mirrors of II-VI semiconductor lasers pumped by electron beam or optical radiation promote the multiple enhancement of laser power and efficiency.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030110
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  • 9
    Electronic Resource
    Electronic Resource
    Origin of the stokes shift in semiconductor quantum wells (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 95-101 
    Details
    ISSN: 1057-9257
    Keywords: Stokes shift ; Quantum wells ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Excitonic energy levels have been calculated in CdTe quantum wells with Cd1-xMnxTe barriers. It has been shown that the introduction of small-scale (relative to the exciton Bohr radius) interface disorder, which either preserves or breaks the inversion symmetry, can produce appreciable Stokes shifts between optical absorption and emission and that the associated line-widths can remain narrow. A criterion for the existence of high-quality interfaces, based on optical spectra, is described.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030114
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence and efficiency of Ce3+ in SrS powders (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 131-136 
    Details
    ISSN: 1057-9257
    Keywords: II-VI compound ; SrS : Ce ; Photoluminescence ; Concentration quenching ; Phosphorescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The luminescence efficiency of SrS: Ce powders in the doping range from 0.01 to 1.0 at.% was investigated by photoluminescence decay studies. The radiative decay time of Ce3+ in SrS was determined to be 27 ns. The onset of concentration quenching at concentrations higher than about 0.7 at.% has been obtained. The photoluminescence spectrum of Ce3+ exhibits two emission bands as a consequence of the ground state splitting. The Huang-Rhys factor of the 5d-4f transition was estimated to be about 6. The inhomogeneous broadening of the emission band of samples with higher doping level has been investigated by site-selective and time-resolved spectroscopy.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030119
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  • 11
    Electronic Resource
    Electronic Resource
    Inorganic materials. D. W. Bruce and D. O'Hare. Wiley, Chichester, 1992, ISBN 0 471 928895 £58.00 (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 233-234 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040308
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  • 12
    Electronic Resource
    Electronic Resource
    Announcement (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 239-239 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040310
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  • 13
    Electronic Resource
    Electronic Resource
    Guest Editorial (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 241-242 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040402
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  • 14
    Electronic Resource
    Electronic Resource
    Peculiarities of the quantisation of the energy spectrum of gapless semiconductors in a magnetic field under space confinement (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 57-65 
    Details
    ISSN: 1057-9257
    Keywords: Energy spectrum ; 2D systems ; Gapless semiconductor ; Magnetic field ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: An exact solution for the zero boundary condition of the problem of carriers in spatially confined gapless semiconductors in a magnetic field is presented. Three cases are analysed: (i) the semiconductor occupies a half-space and the magnetic field orientatin is H ⊥ n (n is the surface normal); (ii) and (iii) a film of a gapless semiconductor at two orientations of the magnetic field, i.e. H ⊥ n and H | n respectively. It is shown that since the energy spectrum of gapless semiconductors is formed by strong relativistic spin-orbit interaction, significant peculiarities of the quantisation of the electron energy spectrum occur in all cases considered. Experiments to check the results obtained are discussed.
    Additional Material: 6 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030109
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  • 15
    Electronic Resource
    Electronic Resource
    Novolac-based resists (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 75-82 
    Details
    ISSN: 1057-9257
    Keywords: Novolac resins ; Positive-working resists ; DNQs ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The performance of novolac-diazonaphthoquinone-based positive-working resists is discussed in terms of the molecular weight distributions and microstructures of the novolac resins and the structural variations in the photoactive dissolution inhibitor. Modelling studies leading to recent improvements allosing the delineation of 0.35 μm line and space pattens by ensuring a focal depth of 105 μm are outlined. Consideration is also given to the new problems such as pivotal shift and halation that arise in the application of high-resolution photolithography using novolac-diazonaphthoquinone resists.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040204
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  • 16
    Electronic Resource
    Electronic Resource
    p-Doping of GaAs and AlGaAs using the triethylamine adduct of dimethylzinc (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 343-347 
    Details
    ISSN: 1057-9257
    Keywords: Dimethyzinc ; Adduct ; MOVPE ; GaAs (p-doping) ; AlGaAs (p-doping) ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The adduct between dimethylzinc and triethylamine has been used as a p-dopant source in the growth of GaAs and Al0.3Ga0.7As alloys by metalorganic vapour phase epitaxy (MOVPE). The dopling efficiency of this adduct in these alloys and in InP is lower than that of dimethyl zinc.
    Additional Material: 2 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860040505
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  • 17
    Electronic Resource
    Electronic Resource
    Electron-beam-pumped laser emitters with microrelief mirrors based on II-VI semiconductorsPresented at European II-VI Workshop, Aachen, 1993. (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 365-371 
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    ISSN: 1057-9257
    Keywords: II-VI semiconductor ; Laser ; Generation ; Longitudinal electron beam pumping ; Microrelief ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The power characteristics of electron-beam-pumped emitters based on II-VI compounds have been stukdied. The use of a microrelief with direction-selective reflective properties instead of a totally reflecting miror has made it possible to provide effective sukppression of closed non-characteristics and efficiency of lasers and to make them suitable for obtaining generation with high efficiency in a number of media, in particular YAG:Nd3+, KGW:Nd3+ and Lif:F2+ (OH), at room temperature.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040508
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  • 18
    Electronic Resource
    Electronic Resource
    Crystallographic orientation and light emission of streamer discharges in II-VI semiconductorsEuropean II-VI Workshop, Aachen, 1993. (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 373-380 
    Details
    ISSN: 1057-9257
    Keywords: II-VI semiconductor ; Laser ; Streamer ; Electric discharge ; Luminescence ; Generation ; Crystallographic orientation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Some results of Investigations on the crystallographic orientation, luminescence and stimulated emission of streamer discharges in monocrystals of hexagonal CdS, CdSe and ZnO and cubic Znsand Snseare presented.
    Additional Material: 10 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860040509
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  • 19
    Electronic Resource
    Electronic Resource
    In situ optical monitoring of the movpe growth of ZnSe on GaAs (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 401-405 
    Details
    ISSN: 1057-9257
    Keywords: MOVPE ; ZnSe ; Growth mechanism ; Surface chemistry ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In situ optical reflection measurement was employed to study surface processes during the MOVPE growth of ZnSe films under an alternate supply of diethylzinc (DEZn) and dimethylselenide (DMSe) using H2 and/or N2 as carrier gases. We have found that the time-dependent reflection signal exhibits a unique saw-toothed pattern during the DEZn supply, which is attributed to the adsorption and structural change of the DEZn. In contrast, the influence of DMSe on the time-dependent signal appears to be rather marginal. A growth mechanism is proposed based on these experimental results, through which the important role of ambient hydrogen is discussed.
    Additional Material: 6 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860040603
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  • 20
    Electronic Resource
    Electronic Resource
    Optically stimulated intersubband absorption in undoped amorphous Si/SiO2 qiantum well (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 417-421 
    Details
    ISSN: 1057-9257
    Keywords: Amorphous quantum wells ; Intersubband transitions ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Intersubband absorption has been observed in undoped amorphous multiple-quantum-well (MQW) strucctures under interband excitation. The transitions take place between the first and second subbands of the conduction band and involve non-equilibrium electrons excited into the first subband by optical pumping. The absorption band FWHM of 0.1 eV is much larger than for crystalline MQWs, a fact which reflects the relaxation of the electron momentum conservation in the QW plane. The high joint density of states and oscillator strength for the intersubband transitions in amorphous QWs allow one to observe the absorption at low electron concentrations (Ne ≈ 1013 cm-3) in the ground conduction subband.
    Additional Material: 2 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860040606
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  • 21
    Electronic Resource
    Electronic Resource
    Identification of the volatile decomposition products produced in the deposition of (Hg,Cd)Te by MOVPE (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 151-161 
    Details
    ISSN: 1057-9257
    Keywords: MOVPE ; (Hg, Cd)Te ; Decomposition products ; GC-MS ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The pyrolysis reactions of di-isopropyl telluride and dimethyl cadmium, both alone and in combination and with and without mercury, have been studied using the technique of gas chromatography-mass spectrometry (GC-MS). For example, when mercury and dimethyl cadmium are mixed in hydrogen at the growth temperature (370°C), the volatile products observed are methane, ethane and dimethyl mercury. In contrast, when di-isopropyl tellurideis substituted for the cadmium precursor in this reaction, the products observed are propane, propene and 2,3-dimethylbutane with no volatile mercury-containing compounds. Heating the two organometallic precursors together at the growth temperature in the absence of mercury gives products expected from the pyrolysis of each one alone plus a number of interaction products such as 2-methylpropane. The results of these studies will be presented, a mechanism for the reactions proposed and the implications for MOVPE growth discussed.
    Additional Material: 9 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030122
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  • 22
    Electronic Resource
    Electronic Resource
    Radiative efficiencies and deep levels in zinc selenide (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 199-202 
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    ISSN: 1057-9257
    Keywords: Zinc selenide ; Luminescence ; Deep levels ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Although zinc selenide and related materials are promising for blue light-emitting diodes and lasers, present performance is unsatisfactory. The blue radiative efficiency at room temperature is low and the decay time of luminescence is correspondingly short. It is argued that the problem is non-radiative recombination by the Hall-Shockley-Read mechanism at deep levels and that the concentration of these levels must be high. Experimental evidence for the existence of such levels is presented. Characterisation and control of deep levels will be essential for progress in this area.
    Additional Material: 2 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030128
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  • 23
    Electronic Resource
    Electronic Resource
    A comparison of the diffusion of copper, gallium and cadmium in cadmium telluride (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 209-215 
    Details
    ISSN: 1057-9257
    Keywords: Diffusion ; Cadmium telluride ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The rates of diffusion of both Ga and Cu in CdTe have been measured over the temperature ranges 350-820 and 200-400°C respectively and the results are compared with the self-diffusion of Cd (350-920°C).In the case of the Cd self-diffusion the Arrhenius graph showed two active diffusion mechanisms, one dominating above 500°C and the other below. It suggested that in the temperature range 500-800°C the main defect responsible for diffusion was Cdi-, with a significant contribution at lower temperatures from the associated defect of the form (CdiVcd)x Below 500°C another mechanism predominated which was possibly due to residual impurities.The results for the diffusions were in close agreement with those obtained by other workers. The Ga diffusions showed a complex behaviour which suggested that two mechanisms were active simultaneously, one independent of Cd partial pressure and the other decreasing with increasing Cd partial pressure.It was concluded that CdTe would be suitable as a diffusion barrier to protect HgxCd1 - xTe devices from Ga contamination from GaAs substrates but would not be efficient at reducing Cu contamination from the substrate in the device.
    Additional Material: 5 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030130
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  • 24
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    Comparison of two approaches to forced convection in crystal growth of II-VI compounds by THM (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 233-238 
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    ISSN: 1057-9257
    Keywords: Solution growth ; THM ; HgCdTe ; CdZnTe ; Forced convection ; ACRT ; Solvent inclusions ; IR microscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Hg1 - xCdxTe and Cd1 - xZnxTe single crystals were grown by the tracwelling heater method (THM), applying two different techniques of artificially stirring the solution zone. Accelerated crucible rotation (ACRT) was used in a vertical growth arrangement and compared a technique with constant rotation around the horizontal axis of the ampoule. The dominant hydrodynamic mechanisms of noth methods are discribed by the rotating disc model and are suggested to be almost identical with respect to the growth conditions at the interface. Convective flow is effectively enhanced adhacent to the growing crystal, where the matter transport is regarded as the rate-limiting step of solution growth. Inclusion density analysis by IR microscopy was used to characterise the crystals of Cd1 - xZnxTe grown at different rates. It was shown that forced convection allows an increase in the crystal growth rate from a few mm day-1 with ACRT or horizontally rotating THM.
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    URL: http://dx.doi.org/10.1002/amo.860030133
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    Analysis of photoinduced current transient spectroscopy (PICTS) data by a regularisation method: Application of compensation defects in CdTe (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 269-274 
    Details
    ISSN: 1057-9257
    Keywords: Compensation defects ; PICTS ; CdTe ; Tikhonov regularisation ; III-posed problems ; Deep levels ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A detailed analysis of photoinduced current transients of differntly grown CdTe:Cl samples was performed in the 100-130 K range in order to investigate the influence of the different growth techniques (sublimation, Bridgman method and travelling heater method (THM)) on the compensation defects. The transients were evaluated using a regularisation method (fast Tikhonov regularisation) as implimented in the program FTIKREG. The advantages of the regularisation method in comparison with the customary two-gate technique are demonstrated by the analysis of simulated data. It can be shown that the different growth techniques have only one level in common. Furthermore, the superposition of different traps can lead to wrong results using the conventional two-gate technigque. The temperature dependence of the relaxation times is evaluated and the corresponding trap parameters are determined.
    Additional Material: 8 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030138
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    Liquid crystalline hydrogen-bonded complexes formed between alkoxystibazoles and phenols (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 273-276 
    Details
    ISSN: 1057-9257
    Keywords: Liquid crystals ; Hydrogen bonding ; Phenols Stilbazoles ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Mesomorphic materials formed by hydrogen bonding between 4-alkoxystillbazoles and some phenols are described.
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    URL: http://dx.doi.org/10.1002/amo.860040406
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    Isomorphous mixing of mesogenic anions and uncharged analogues in organised poly(ehtylene oxide)-alkali salt complexes (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 265-271 
    Details
    ISSN: 1057-9257
    Keywords: Poly(ethy1ene oxide)-salt complexes ; Anionic mesogens ; Uncharged mesogens ; Isomorphous mixture ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The preparation and characterisation of novel ionic polymer liquid crystal complexes of poly(ethylene oxide)-Na+ with mesogenic anions and their uncharged structural analogues in homogeneous mixtures are described. The systems discused most fully are the anion of the phenolic mesogen 4-n-hexyloxybenzylidene-4-hydroxy aniline (1) with its uncharged analogue 4-n-hexyloxybenzylidene aniline (1a) and the anion of 5-(4-n-octyloxy-2,3-dicyanophenyleneoxycarbonyl)benzimidazo-le (2) and its uncharged analogue 4-octyloxy-2,3-dicyanophenyloxybenzoyl (2). Differential scanning calorimetry, wide angle x-ray diffraction and polarised light microscopy show that PEO-Na1/1a and PEO-Na2/2a are homogeneous mesogenic phases when Na1 or Na2 are present at 50% or less of the stoichiometric composition in complexes (EO : salt = 3 : 1) and the shortfall is made up from 1a or 2a uncharged analogues of 1a and related systems substituted by methoxy rather than hydrogen do not form homogeneous mixtures.
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    URL: http://dx.doi.org/10.1002/amo.860040405
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    Macroscopic non-linearities of some stilbazolium derivatives and the calculatium derivatives and the calculation of their molecular hyperpolarisability (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 293-301 
    Details
    ISSN: 1057-9257
    Keywords: Non-linear optics ; stilbazolium salts ; MOPAC calculations ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The synthesis of some optically non-linear stilbazolium salts is described. Since their solid state non-linearities were small, MOPAC5 was used to compare their relative molecular non-linearities.
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    URL: http://dx.doi.org/10.1002/amo.860040409
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    Oxide removal from the GaSb surface and fabrication of MBE GaSb photodiodes and Au-GaSb schottky diodes (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 319-325 
    Details
    ISSN: 1057-9257
    Keywords: GaSb ; Photodiodes ; Schottky diodes ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Oxide removal from GaSb surfaces by several wet chemical treatments and subsequent thermal annealing was investigated. Preferable wet chemical treatments by which surface oxides could be removed effectively at room temperature were evaluated in the experiments. This method can be effectively applied to fabrication processing of MBE GaSb photodoides and Au-GaSb Schottky doides. Low-reverse-leakage GaSb photodiodes and near ideal Au-GaSb Schottky diodes were thus obtianed.
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    URL: http://dx.doi.org/10.1002/amo.860040502
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    MOVPE growth and characterization of ZnSxSe1 - x/ZnSe quantum wells (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 191-198 
    Details
    ISSN: 1057-9257
    Keywords: ZnSe ; ZnSSe ; GaAs substrate ; MOVPE ; Photoluminescence ; Quantum well ; Interface properties ; Growth interruption ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In this work we report on ZnSxSe1 - x/ZnSe quantum wells grown by atmospheric pressure MOVPE on GaAs substrates. Diethylznc (DEZn), diethylselenium (DESe), diethylsulphur (DES) and H2S were used as source materials. Binary quantum wells with ZnSe or ZnS as barrier were usually grown in sets of 10 pairs on a 0.5 μm ZnSe or ZnS buffer, respectively. QWs with different well thicknesses (1-4 nm) show a typical shift to higher energies with decreasing well thickness and also a large decrease in PL intensity with increasing well thickness. Owing to the onset of relaxation above 5 nm well thickness, no PL emission could be observed. QWs of the same thickness but grown at different temperatures (420-520°C) show a broadened line shape with decreasing growth temperature. Growth interruption (3-50 s) also causes a broadening of the PL emission with decreasing interruption time. This is caused by interface reconstruction at higher growth temperatures and longer growth interruption. A ZnS buffer of 0.5 μm improves the PL line shape compared with a ZnSe buffer.ZnSxSe1 - x/ZnSe single and multiple QWs (Lz = 1-4 nm) were grown to reduce the strain in the structures. A typical quantum confinement energy shift of 160 meV for the 1 nm well can be observed in ZnS0.68Se0.32/ZnSe QWs. In comparison with the binary QWs, the FWHM could be reduced by about a factor of two to 34 meV. This improvement was obtained by an optimisation of the switching process to prevent the desorption of sulphur from the ZnSSe during the growth interruption.
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    URL: http://dx.doi.org/10.1002/amo.860030127
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    Langmuir-blodgett films of stilbazole complexes of iridium(I) and rhodium(I) (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 243-251 
    Details
    ISSN: 1057-9257
    Keywords: Langmuir-Blodgett film ; Stilbazole ; Metal complex Iridium ; Rhodium Pyroelectricity ; Alternate layer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Complexes of 4-alkoxystilbazoles with iridium and rhodium form stable Langmuir layers at the air-water interface even when the alkoxy chain is relatively short (C5-C12). The surface pressure-area isotherms indicate that condensed molecular monolayers are obtained. The area per molecule of each compound in its monolayer form is typically 0.60 nm2, which agrees well with the cross-sectional area of the [Ir(CO)2CI] or [Rh(CO)2CI] head group predicated using molecular models. This suggests that the molecules are oriented with the metal moiety close to the water surface and their alkoxystilbazole ‘rod’ protruding from the plane of the water surface. Such floating monolayers have been transferred on to solid substrates such as glass, aluminium (AI2O3/AI/Glass) and silicon (SiO2/Si) at relatively high speed (10 mm min -1) to form Y-type LB assemblies. The UV-Visible absorption properties of these materials in solution and LB film form have been studied. LB films of these complexes yield bathochromically shifted spectra relative to the LB film spectrum of the uncomplexed stilbazole. Additionally, these spectra are often broader and hypsochromically shifted relative to their corresponding solution spectra as a result of the close molecular packing within the LB film and the associated dipole-dipole interactions.The electrically polar nature of the molecules described in this paper suggest that they may be suitable candidates for new pyroelectric materials. Thus the pyroelectric coefficient (the rate of change of electric polarisation with respect to temperature) has been measured for a polar multilayer LB film containing an iridium complex. A pyroelectric coefficient of 3.5 μCm-2K-1 (at 30 °C) has been measured, which is one of the highest reported valued for an LB film. Additionally, a low dielectric loss of around 0.01 has been found over the frequency range 50 Hz-1 kHz, indicating that such LB films may be usfeul materials for pyroelectric sensors.
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    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040501
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    Foreword (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 1-1 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030102
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    Mixed alkyl zinc or cadmium complexes with dialkyl thio- or selenocarbamates: Precursors for cadmium chalcogenides (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 171-175 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A series of new compounds [RME2CNR′2]2 (R and R′ are various alkyl groups, e.g. M ≡ Zn or Cd, R ≡ Me, R′ ≡ Et) have been synthesised and characterised. The compounds can be used as single molecular precursors for the deposition of the corresponding binary chalcogenides. In the present paper the range of compounds synthesised and their uses are reviewed. Preliminary observations on the deposition of thin films on glass and GaAs(100) substrates are reported.
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    Effects of rapid thermal annealing on the electrical properties of Hg1 - xCdxTe bulk crystals (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 177-182 
    Details
    ISSN: 1057-9257
    Keywords: RTA ; Mercury Cadmium ; Telluride ; Hall characterization ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: This paper reports the change in the bulk transport properties of p-type MCT samples induced by a rapid thermal annealing (RTA) process. This change is produced homogeneously within the crystal without interchange of mercury with the surrounding atmosphere. The carrier concentration varies towards an equilibrium value that depends only on the annealing temperature. For the material and temperatures investigated (250-420°C) the equilibrium carrier concentration depends exponentially on the inverse of the temperature, its value ranges between 1 × 1017 and 4 × 1017 cm-3. The time needed to reach equilibrium is a function of the temperature, varying from 10 s at 420°C to 200 s at 250°C. The hole mobility is also affected by the RTA process, its evolution being a function of the process temperature and time. A model is proposed to explain these modifications based on a reaction of generation-annhilitation of mercury vacancies and interstitials that would take place within the crystal with no external interaction.
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    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030101
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    Controlling the interface between II-VI and III-V semiconductors (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 3-9 
    Details
    ISSN: 1057-9257
    Keywords: Heteroepitaxy ; Raman spectroscopy ; In situ characterisation ; II-VI/III-V ; CdTe ; CdS ; III2VI3 ; Interface ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: This paper describes ways in which the interface between II-VI and III-V semiconductors can be controlled so as to suppress or alter commonly observed interfacial reactions. This will be done using CdTe/InSb and CdS/InP heterostructures as examples. In the case of CdTe/InSb a modification of the interfacial properties is achieved by a variation in the II/VI ratio offered to the surface during growth, while the influence of Sb interlayers is studied for CdS on InP. Information on the interface properties is obtained from Raman spectroscopy. While structural and electronic properties of the II-VI layer can be deduced from the scattering intensities of its characteristic vibrational modes, the formation of interfacial compounds is observed by the appearance of scattering intensity in a different spectral range, which is consistent with the formation of III2VI3 compounds. The potential of Raman spectroscopy for on-line in situ monitoring of growth processes will be displayed.
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    Stimulated emission in ZnSxSe1 - x/ZnSe heterostructures grown by MOVPE (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 73-80 
    Details
    ISSN: 1057-9257
    Keywords: MOVPE ; ZnSxSe1 - x ; MQW ; Optical properties ; Lasing Exciton ; Electron-hole plasma ; Dynamics ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Non-linear and stimulated emission of ZnSxSe1 - x/ZnSe multilayer structures grown by MOVPE on GaAs is investigated by means of high-density excitation spectroscopy using a high-resolution pulsed excimer-dye laser system as well as a picosecond titanium-sapphire laser for time-resolved measurements. Heterostructures with ZnSe layers or single and multiple quantum wells were grown in which the ZnSe layer widths were varied between 1 nm (strong quantum confinement) and 500 nm (quasi-bulk situation). The sulphur concentration in the ZnSxSe1 - x buffer, barrier and cap layers was chosen between x = 0.045 and x = 0.74 in order to find the most promising compromise with regard to maximum band offset to ZnSe for most efficient carrier confinement and suitable waveguiding properties depending on variation in the refractive index, and to highest structural quality of the actively emitting ZnSe layers. Stimulated emission is found to occur in all samples, being brightest in the sample with the lowest sulphur concentration in the cap and barrier layers. Its dynamical properties point to a probable interpretation in terms of electron-hole plasma creation, which, however, may not be the basic process in narrow-quantum wells or strongly structurally disturbed samples.
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    Laser processes in wide gap II-VI semiconductors (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 103-109 
    Details
    ISSN: 1057-9257
    Keywords: Laser emission ; II-VI semiconductors ; Many particle effects ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: After a brief historical remark about the evolution of scientific interest in wide gap II-VI compounds, we review the various laser processes which have been identified in bulk materials and thin layers during the last 25 years. We then proceed to quantum wells and superlattices and stress the differences from III-V compounds. We finish by considering the exploitation of specific properties of widegap II-VI compounds for light-emitting and laser diodes.
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    Dynamical aspects of free exciton-magnetic polaron formation in CdTe-Cd1 - xMnxTe quantum wells (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 117-125 
    Details
    ISSN: 1057-9257
    Keywords: Exciton-magnetic polaron ; Quantum well ; Dilute magnetic semiconductors ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Calculations of the energies of magnetic polarons formed by free excitons localised in non-magnetic CdTe wells next to magnetic Cd1 - xMnxTe barriers are presented. A comparison with recent time-resolved spectroscopy results allows insight to the physical aspects governing the dynamics of the formation of the polarons. It is shown that the experimentally measured energy shift is not the polaron energy itself but the difference between this and the change in the exciton binding energy. The latter is calculated within the envelope function approximation and by employing a variational technique. The polaron energy calculation uses a modified version of an approach described by Wolff.The results show that static polaron calculations are not generally reliable and that the exciton-magnetic polaron has to be viewed as a dynamically evolving complex. It is initially energetically favourable for the exciton-magnetic polaron complex to increase its spatial localisation, since the gains in polarisation energy exceed the loss in exciton binding energy. However, thermodynamic considerations suggest that in general saturation of the magnetic ions will not occur.
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    Spin-polarised tunnelling current in metal-insulator-gapless semiconductor structures in a magnetic field (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 127-130 
    Details
    ISSN: 1057-9257
    Keywords: Tunneling ; Gapless semiconductor ; Magnetic field ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Experimental investigations of tunnelling conductivity oscillations of metal-insulator-gapless semiconductor structures are performed. For the orientation of the magnetic field H | n (n is normal to the structure plane) a splitting of the oscillation maxima of the tunnelling conductivity due to the spin splitting of the Landau levels is observed. It is revealed that when the magnetic field turns away from this direction the amplitudes of the low-bias maxima decrease monotonously, and at H ⊥ n oscillations corresponding to tunnelling into one spin state only are observed. A theoretical analysis shows that this is caused by an unusual behaviour of the electron wavefunctions near the surface of gapless semiconductors in an applied magnetic field.
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    Homogeneious linewidth and relaxation of excited hole states in II-VI quantum dots (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 141-150 
    Details
    ISSN: 1057-9257
    Keywords: Semiconductor-doped glasses ; Non-linear optical materials ; Differential absorption spectroscopy ; Scattering processes ; II-VI compounds ; Quantum dots ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: By use of differential absorption spectroscopy at different temperatures we investigate the homogeneous line broadening of small CdSxSe1 - x quantum dots embedded in glass. Our experiments show the strong correlation between the precipitation stages and characteristics optical parameters such as the saturation intensity and the longitudinal and transverse relaxation times. In samples grown in the diffusion-controlled regime to avoid coalescence, we find after strong laser excitation for the first time spectrally narrow holes in the non-linear differential absorption spectra. These sharp non-linear resonances with a halfwidth Γ of only 10 meV at T = 20 K allow us to investigate the energetic distance of the lowest hole levels and the temperature dependence of the line broadening. The different contributions of LO phonon coupling and temperature-independent scattering to the homogeneous linewidth will be analysed. The relaxation from the excited hole states has been investigated by exciting in the higher-energy hole states and measuring the resulting change in the ground state absorption.
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    URL: http://dx.doi.org/10.1002/amo.860030121
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    High-resolution scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) of ZnSxSe1 - x/ZnSe Quantum Wells (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 183-190 
    Details
    ISSN: 1057-9257
    Keywords: Scanning transmission electron microscopy (STEM) ; High-resolution ; Z-contrast ; ADF ; HAADF ; Electron energy loss spectroscopy (EELS) ; ZnSxSe1 - x/ZnSe quantum wells ; MOVPE ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Epitaxial growth techniques for ZnSxSe1 - x/ZnSe heterostructures have already achieved a high degree of development. Further improvements strongly require characterisation techniques with high compositional sensitivity and high spatial resolution. Therefore in this work high-resolution Z-contrast, which provides compositional information down to the atomic scale, has been used for the first time to characterise ZnSxSe1 - x/ZnSe quantum well structures. The influence of structural defects on Z-contrast is demonstrated by comparison of scanning transmission electron microscopy (STEM) bright field images and STEM Z-contrast micrographs of planar defects and dislocations. The compositional abruptness of ZnSxSe1 - x/ZnSe interfaces in MOVPE-grown quantum well (QW) structures is judged from high-resolution Z-contrast micrographs. Electron energy loss spectroscopy (EELS) measurements were performed for the first time in ZnSxSe1 - x/ZnSe QW structures in order to obtain quantitative compositional information with nanometre spatial resolution. From EELS line scans, which monitor the selenium concentration across ZnSe QWs, the obtainable spatial resolution is estimated to be about 1-2 nm. The problems that have prevented quantitative analysis of the selenium concentration up to now are discussed.
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    Plasma-enhanced MOVPE and nitrogen doping of ZnSe (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 203-208 
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    ISSN: 1057-9257
    Keywords: ZnSe ; Diallylselende ; Plasma ; MOVPE ; Nitrogen doping ; Raman spectroscopy ; Photoluminescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In order to obtain high quality Znse epilayers on GaAs which can be intentionally P- and n-type doped growth at a reduced temperature is highly desirable. Therefore in this work the suitability of diallylselenide and the influrnce of plasma precracking have ben investigated. Photoluminesscence, Raman spectroscopy, scanning electron microscopy, X-ray, SIMS and Hall measurements were used to anaylse the samples. The selenium precursor was fully decomposed at temperatures above 360°C if it was precracked by a plasma. Bound excitions could be resolved with negligible donor-acceptor pair (DAP) and copper green emission in the PL spectra form films which were grown with a plasma at temperatures beyond 530°C. Clearly the hpe for reduction in the deposition temperature was not achieved. Raman spectra also revealed strong crystalline quality variations. For the doping experiments nitrogen was used as the carrier gasa instead of hydrogen. Plasma cracking of the selenium precursor was still necessary. Thye substitution of the H2 carrier gas by nitrogen reduced the growth rate by a factor of 2.6 but enhanced the crystalline properties of the samples as shown by the Raman measurements. Strong DAP emission at 2.7eV in the (PL) spectra was observed. SIMS measurements showed a nitrogend concertration of about 3 × 1017 cm-3. An additional nirtogen plasama (0-7W) had a begligible effect on the nitrogen concentration in the sample. The samples were semi-insulating, whichmight be a conswquence of the crystalline quality of ZnSe grown with DASe as selenium precursor.
    Additional Material: 5 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030129
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    GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 239-245 
    Details
    ISSN: 1057-9257
    Keywords: Substrates ; MOVPE ; MCT ; Surface morphology ; Structural properties ; Photoconductors ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: After a review of the structural properties of (Hg,Cd)Te layers grown by MOVPE on GaAs substrates, topical questions such as out-diffusion of Ga and As from the substrate into the layers, monolithic integration of signal procesing into the substrate and the presence of pyramidal defects in (100) layers will be discussed. In order to solve the last problem, a systematic study of the influence of the (h11) GaAs substrate orientation and polarity on the structrual properties and surface morphology of CdTe layers grown by MOVPE has ben carried out. Twin-free layers are obtained on (211)A, (311)B and (511)B GaAs surface orientations as ezplained by a model taking into accountthe type of dangling bonds at the interface. The performance of photoconductors fabricated on(Hg,Cd)Te layers of various orientations confirms these results. Particularly good results have been obtained for the (311)B orientation.
    Additional Material: 8 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030134
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    Photoluminescence spectroscopy as a tool to assess extrinsic impurities and quality of ZnSe and ZnSxSeI - x grown by MOVPE (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 261-267 
    Details
    ISSN: 1057-9257
    Keywords: ZnSe ; ZnSxSe1 - x ; MOVPE ; Photoluminescence ; Mapping ; Purified ; DESe source ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In this paper we report new results concerning the cause of impurities responsible for the Ix, and I2-peaks in photoluminescence (PL) spectra of ZnSe grown by MOVPE. An improvement in ZnSe epilayer quality is obtained by using a metal organic selenium precursor with reduced chlorine concentration. The PL spectrum of such a layer shows typical excitonic transitions, but compared with samples grown with a more contaminated source, the intensity of the Ix, and the I2 peaks decreases relative to the free exciton transition. A Gaussian fitting of the donor-bound exciton peaks taking the background of other structures into account shows that the ratio between the Ix and I2 peaks does not differ significantly between two samples. Both the decrease in donor-bound exciton transitions and the unchangeability of the ratio Ix/I2lead to the conclusion that only chlorine impurities are responsible for Ixand Ix. In order to verify the homogeneity of impurity uptake across a 2 inch wafer, we performed PL mapping of ZnSxSe1 - x layers. Mapping of a 2 inch ZnSe wafer shows that the FWHM of Ix across a wafer does not vary significantly (1.55 ± 0.21 meV). On mapping a 2 inch ZnS0.3Se0.7 wafer fabricated with H2S as the sulphur source at TD = 480°C, we found a rotational symmetric dstribution of sulphur in the layer. The sulphur content x at the centre is nearly constant. The difference in x between the centre and the boundary of a bad surface region at the edge of the wafer is less than Δx = 0.045. The FWHM of the band edge luminescence follows the same tendency across the wafer. The dependence of homogeneity on the reactor design as well as the uptake of unintentional impurities from the precursor is discussed in detail.
    Additional Material: 6 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030137
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    Phosphorescent spectral and decay studies of CaI - xSrxS:Ce solid solutions (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 283-288 
    Details
    ISSN: 1057-9257
    Keywords: Phosphors ; Alkaline ; Earth sulphides ; Photoluminescence ; CaS ; SrS ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Ca1 - xSrxS Solid Solutions at 10 m/o intervals have been prepared by coprecipitation of sulphates from aqueous solution followed by reduction at 1000°C with hydrogen. Phosphorescence emission spectra have been determined for these solid solutions doped with 0.1 m/o cerium and show a blue shift with increasing strontium content from 2.46 to 2.59 eV. Hyperbolic phosphorescent decay curves were observed at both room and liquid nitrogen temperatures across the composition range and have been broken down into three exponential components by graphical and computer-programme-based methods. At room temperature trap depth values of 0.366, 0.316 and 0.282 eV with measured lifetimes of 1.9, 0.26 and 0.07 ms respectively were determined with little dependence on composition. At liquid nitrogen temperature shallower traps were observed at 0.103, 0.086 and 0.076 eV with respective decay times of 5, 0.4 and 0.09 ms having little sensitivity to changes in the host compostion. These traps are related to intrinsic defects, some of which may be surface in character. The blue shift in emission peak energy with the decrease in band gap from CaS to SrS is discussed.
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    URL: http://dx.doi.org/10.1002/amo.860030140
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    A new, thermally efficient route to crystalline BaTiO3 from monodispersed rutile powder (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 9-17 
    Details
    ISSN: 1057-9257
    Keywords: Barium ; Rutile ; Ammonia ; Barium titanate ; X-ray powder diffraction ; Scanning electron microscopy ; Thermogravimetric analysis ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Treatment of monodispersed rutile (TiO2) powder with an ammonlacial solution of elemental barium gives a uniformly coated precursor to BaTiO3. Thermolysis at about 900 °C for 6 h gives crystalline (by XRS) material with an average particle size of less than 0.1 μm (as determined by SEM).
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    Liquid crystal flat panel displays. W. C. O'Mara. Van Nostrand Reinhold (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 51-52 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040108
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    Guest editorial (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 53-53 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040202
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    Silylation and dry procession (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 129-138 
    Details
    ISSN: 1057-9257
    Keywords: Silylation ; Dry development ; Photoresist ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The issues of dry development and self-developing resists are addressed in this paper by way of an introduction to the main topic of surface imaging, in which diffusion-enhanced vapour plhase silylation chemistries and their mechanisms are developed with specific reference to resists that function through the DESIRE process. More recent liquid phase silylation processes are also considered.
    Additional Material: 7 Ill.
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    Wet development of polymer resists: A guide to solvent selection (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 155-163 
    Details
    ISSN: 1057-9257
    Keywords: Wet development ; θ-Solvents ; Cosolvents ; Rate of dissolution ; Polymer resists ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The criteria for selecting effective solvent systems for wet development of polymer resist materials are explored. Methods of estimating the polymer-solvent interactions are described, including the use of solubility parameters and the Flory-huggins interaction parameter. Methods of achieving θ-conditions, which represent minimal solvent-precipitant mixtures, or the more novel approach of establishing cosolvent systems are described. The rate dissolution has also bee identified as a controlling parameter. Some optical and gravimetric methods for measuring dissolution rates for polymer films are outlined. Examples of the influence of these factors on the sensitivity and contrast of resists such as poly(methylmethacrylate) and poly(p-methyl styrene-stat-chloromethyl styrene) are described.
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    URL: http://dx.doi.org/10.1002/amo.860040209
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    Phase transition from the cubic to the hexagonal modification in thin CdS films on InP(110) (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 11-14 
    Details
    ISSN: 1057-9257
    Keywords: Heteroepitaxy ; CdS ; Crystal structure ; Photoluminescence ; Reflection ; Thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: CdS films were prepared by molecular beam epitaxial growth on clean cleaved InP(110) substrates. Films with thicknesses in the 200 nm range were studied by optical techniques: spectroscopic ellipsometry, reflection and photoluminescence. The film thickness and the dielectric function of the films are evaluated from the ellipsometry data. The feature in the imaginary part of the film dielectric function which is induced by the E1 interband transition in CdS is found to be extremely sensitive to the crystal modification. A splitting of this feature occurring at approximately 200 nm indicates a phase transition in the thin films from the cubic to the hexagonal modification. This is confirmed by reflection measurements which show two series of reflection loops for both modifications for film thickness exceeding 200 nm. The energy positions of the free excitons of the hexagonal and cubic modifications are derived. In addition, the band gap for the cubic modification is determined for the first time. The photoluminescence spectra also reveal cubic and hexagonal contribution of donor-acceptor pair recombinations. From the excitonic transitions attempts are made to identify the main impurities in the layers.
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    Gain and dynamics of excitons in MOVPE-grown ZnSe/ZnSxSe1 - x heterostructures (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 51-55 
    Details
    ISSN: 1057-9257
    Keywords: MOVPE ; Quantum wells ; ZnSe/ZnSxSe1 - x heterostructures ; Gain ; Excitons ; Luminescence dynamics ; Transfer processes ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Optically pumped stimulated emission in ZnSe/ZnSxSe1 - x heterostructures grown by MOVPE has been observed up to 170 K. Gain measurements have been performed using the variable stripe length method. The underlying gain mechanism at 25 K is atributed to an excitonexciton scattering process. Photoluminescence excitation spectra and the temporal evolution of the luminescence indicate a transfer process from the ZnSxSe1 - x barrier into the ZnSe active layer.
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    Experimental and theoretical aspects of electrical characteristics of Au/ZnSe/GaAs heterostructures (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 81-88 
    Details
    ISSN: 1057-9257
    Keywords: Semiconductor heterojunctions ; Admittance ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We present results of a theoretical and experimental study of Au—ZnSe—GaAs heterostructures. In the theoretical part we report the band diagrams, charge densities and static I-V curves obtained from a detailed numerical analysis. In the experimental part we give the results for the static I-V curves and frequency-dependent admittance and impedance at different bias voltages for an Au—ZnSe—GaAs heterostructure with a ZnSe layer of 2.75 μm thickness. An explicit analysis of the data shows that the system can be represented by an equivalent circuit of two RC elements in series corresponding to the ZnSe—GaAs and Au—Se heterojunctions.
    Additional Material: 8 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030112
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    The role of ZnS in ZnS/SrS:Ce,Cl multilayered TFEL devices (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 111-116 
    Details
    ISSN: 1057-9257
    Keywords: II-VI compounds ; Electroluminescence ; ZnS ; SrS ; CeCl3 ; Multilayer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Different ZnS/SrS:Ce,Cl multilayered electroluminescent devices have been prepared by a multisource deposition method. The highest luminance achieved in this investigation is 1540 cd m-2 at 1 kHz using a stack of nine alternating layers of ZnS and SrS:Ce,Cl; the highest luminance in the blue exceeds 14 cd m-2 at 60 Hz, 50 μs pulse excitation. The influence of the ZnS thickness on device performance and stability has been investigated. The electrical and optical behaviour of standard and multilayered devices in time-resolved measurements is compared.
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    URL: http://dx.doi.org/10.1002/amo.860030116
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    Tackling problems in the growth of ZnS/Se through precursor design (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 163-169 
    Details
    ISSN: 1057-9257
    Keywords: Zinc sulphide ; Zinc selenide ; t-butanethiol ; Precursors ; Purification ; Multilayers ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A variety of problems in the growth of wide band gap II/VI materials by MOVPE has been addressed by the use of alternative precursors. The quality of grown layers of ZnSe has been greatly improved by adduct purification of Me2Zn. Using 4,4′-bipyridyl, the recovery of Me2Zn is variable because of the insolubility of 4,4′-bipyridyl in diethylether. Higher yields can be obtained using the ether-soluble base 1,3-bis(4-pyridyl)propane.tBuSH has been introduced for the growth of ZnS. Being a liquid, this compound is easy to handle and it allows growth of high-quality ZnS at temperatures down to 325°C with very little gas phase pre-reaction with Me2Zn. Growth of ZnSxSe1 - x at atmospheric pressure using H2S and Et2Se as the group 16 precursors allows excellent stoichiometric control, since the ratio of S : Se in the grown solid is similar to that of H2S : Et2Se in the gas phase for all compositions. Finally, multilayer structures have been grown at low pressure with excellent interface abruptness and goodquality material. However, the ternary layers are all much higher in sulphur than expected from the gas phase composition and the composition of the ternary appears to be influenced by the nature of the surface on which it is growing.
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    Electrical and optical properties of the transition metal iron in ZnTe and CdTe (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 223-232 
    Details
    ISSN: 1057-9257
    Keywords: CdTe ; ZnTe ; Impurities ; Spin resonance ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We present results of electron paramagnetic resonance (EPR) and optical spectroscopy on different charge states of the transition metal impurity iron in ZnTe and CdTe. We identify the energy level position of the Fe+ acceptor in ZnTe at Ev + 1.7eV and estimate its position in CdTe. Ionisation transitions from Fe+to the conduction and valence bands ar found in both absorption spectroscopy and photo-EPR. Optical intra-defect tracsitions from Fe+ to crystalfield-split excited states ar resolved for the first time. This assignment to Fe2+ is based on optically detected EPR. Application of both far-infrared Fourier transform and EPR spectroscopy allows the determination of the total iron concentration in all charge states.
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    URL: http://dx.doi.org/10.1002/amo.860030132
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    Vapour growth, EPR and optical study of Znse:Ti single crystals (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 253-260 
    Details
    ISSN: 1057-9257
    Keywords: Seeded chemical vapour transport ; Titanium doping ; Electron spin resonance ; Paramagnetic impurities ; Static Jahn-Teller effect ; Dynamic Jahn-Teller effect ; Photoiuminescence ; Excitation spectra ; Photo-ionization of impurities ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Znse:Ti crystals were grown by seeded chemical vapour transport (SCVT) in a hydrogen atmosphere. In situ doping with titanium was carried out from an additional TiSe source in the quartz ampoule at 1460 K. The Good homogeneity of the Ti distribution and the presence of only a few defects have been demonstrated by etch pit and X-ray topography studies. For the frist time, Ti3+ (3d1) centres in a II-VI semiconductor compund are detected. The concentration of localized centres of Ti2+ and Ti3+ in high-resistivity material determined by EPR is about 5 × 1016 cm-3. Fe3+, Ni2+ and traces of Mn2+ are additionally observed. Below 77K an anisotropic EPR spectrum of Ti3+ (d1) is recorded, indicating both a dynamic and a static Jahn-Teller effect of the 2E(D) ground state. At lower temperatures clear evidence of the static Jahn-Teller effect is observed. The frist emission and excitation spectra of Ti impurities in II-VI compounds are presented. An emission near 3400 cm-1 is assigned to the 3T2(F) → 3A2(F) transition of Ti2+ (d2). Its excitation structures coincide with the known absorption bands to 3T1(P) and 3T1(F). A further structured luminescence band at 4700 cm-1 is related to 2T2 → 2E(D) transition of Ti3+ (d1). Ti ions form a deep donor level Ti2+/Ti3+ situated approximately 14,100 cm-1 above the valence band. This photo-ionization threshold is derived from the excitation measurements in accordance with previous photoconductivity experiments.
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    Preparation and electroluminescence of CaS: (Ce, Eu and Cu) phosphors (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 301-306 
    Details
    ISSN: 1057-9257
    Keywords: Calcium sulphide ; Photoluminescence ; Electroluminescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Doped CaS powder samples were prepared using two methods: (i) a metathesis reaction of carbonate with H2S at 1200°C; (ii) reaction with Na2Co3/S flux at 1000°C in nitrogen, followed by washing in an alkaline solution, drying and sieving to give 20-30 μm particles.Powders produced from both reactions were strongly photoluminescent and singificant AC electroluminescence (ACEL) was observed when samples produced by the metathesis reactions were copper coated. Samples prepared using the flux technique on pre-copperdoped carbonate also showed ACEL.The EL excitation process in the flux grown material differs from that in samples prepared using H2S; this stems from Cu2S microdeposits on the particle surfaces of the former. The formation of the needle-like deposit results from precipitation of copper from solid solution with decreasing temperature. The EL emission arises from observable point sources rather than the more uniform emission from copper-coated samples.
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    Semiconductor lasers, G. P. Agrawal and N. K. Dutta. 2nd edn. Van Nostrand Reinhold, New York, 1993. ISBN 0 442 01102 4, £66.00. No. of pages 616 (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 51-51 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040107
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    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040201
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    Polymeric silicon-containing resist materials (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 95-127 
    Details
    ISSN: 1057-9257
    Keywords: Resists ; Silicon-containing ; Single layer ; Multilayer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Silicon-containing bilayer and trilayer photoresist technology is reviewed. Multilayer resist processes of this type rely on pattern generation in a thin imaging layer followed by pattern transfer to the thick planarising underlayer by oxygen reactive ion etching (RIE). The review concentrates on materials in which the silicon is an integral part of the polymer and does not specifically address photoresists where silicon is incorporated in a post-imaging process step (Such as top-surface-imaging resists). The review is not exhaustive but emphasizes instead specific examples of representative resist chemistry.
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    Photoswitch based on bacteriorhodopsin Langmuir-Blodgett films (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 219-224 
    Details
    ISSN: 1057-9257
    Keywords: Bacteriorhodopsin ; Langmuir-Blodgett films ; Differential response ; Photoswitch ; Photoalarm ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Langmuir-Blodgett (LB) films of bacteriorhodopsin (bR) without addition of lipids were deposited on indium tin oxide (ITO) conductive electrodes. A sandwich photocell with a juction structure of ITO/bR/electrolyte/ITO has been constructed in which the bR LB film was put into contact directly with an aqueous electrolyte immobilized in an agar gel. Under visible light irradiation a transient photocurrent due to a change in light intensity can be observedl showing the property of vision-imitative material. It can be used as a multiple optical switch, since it gives positive and negative transient photocurrnts during application and removal of light irradiation respectively and has a photoresponse repeatedly in the same direction when the light intensity increases or decreases stepwise. A photoalarm consisting of the bR photocell and an amplifier was set up by utilizing the switching function of the bR LB film.
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    Diary of conferences and symposia (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 235-238 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040309
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    Luminescence dynamics of CdSe quantum dots (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 89-93 
    Details
    ISSN: 1057-9257
    Keywords: CdSe ; Quantum dots ; Time-resolved luminescence ; Recombination processes ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We present results of time-resolved luminescence measurements of CdSe quantum dots embedded in glass with radii around 20 Å using intense picosecond excitation resonant into the first excited hole state of a photodarkened sample. Distinct luminescence bands with different spectral widths and positions are found. Their decay on nano- and subnanosecond time scales reflects three different relaxation processes. The fastest luminescence component is discussed in terms of the direct recombination of the excited electron-hole pair, the slower components as being due to the recombination from surface-related states.
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    URL: http://dx.doi.org/10.1002/amo.860030113
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    Free exciton absorption in zinc selenide (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 137-140 
    Details
    ISSN: 1057-9257
    Keywords: Excitons ; Zinc selenide ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We have measured the absorption spectrum of the n = 1 free exciton in ZnSe from 4.2 to 190 K. By fitting to a Lorentzian, we have found the exciton peak energy, width and oscillator strength. The values are compared with published ones, which were mainly obtained by less direct methods. The importance of the electron-hole interaction in radiative processes in ZnSe is emphasised.
    Additional Material: 2 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030120
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    Recombination dynamics of dense elctron-hole plasma in CdS-doped glasses (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 217-221 
    Details
    ISSN: 1057-9257
    Keywords: CdS-doped glass ; Microcrystallite ; Electron-hole plasma ; Luminescence ; Picosecond ; Thermalization ; Surface recombination ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Time-resolved luminescence spectra of highly excited CdS-microcrystallites are studied at room temperature in relation to the hot electron-hole plasma (EHP) effect. When the EHP thermalization is complete the luminescence kinetics shows a steady increase in the recombination rate with decreasing microcrystallite average radius (from 1000 Å to 54 Å). The obtained size dpendence is attributed to surface recombination.
    Additional Material: 4 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030131
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    Defect-induced fundamental edge distoritons in two-photon spectroscopy of semiconductors (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 247-251 
    Details
    ISSN: 1057-9257
    Keywords: Two-photon absorption ; Semiconductor crystal ; Structural defect ; Impurity ; Energy band ; Thermal treatment ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The influence of grown-in and impurity defects on the form of the fundamental absorption edge in ZnO, ZnSe and CdS crystal was studied by the method of two-photon absorption (TPA). A considerable long-wavelength shift of the TPA spectra was measured in Zinc-rich compounds after thermal treatment. This can be explained by a very good saturation of interstitial Zni atoms up to a concentration of 1018 cm-3 causing deformation of the band edge.
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    URL: http://dx.doi.org/10.1002/amo.860030135
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    Far-infrared and Raman spectroscopy of Zn(Se,S) layers (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 275-282 
    Details
    ISSN: 1057-9257
    Keywords: Far-infrared spectroscopy ; Raman spectroscopy ; MOVPE ; ZnSe ; Implantation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We discuss the optical analysis of Zn(Se,S) layers by the application of far-infrared (FIR) and Raman spectroscopy. First a summary is presented of the principles of FIR and Raman Spectroscopy with regard to the relevant epilayer properties which can be investigated by these methods. Subsequently we treat some selected results of FIR and Raman analysis of epilayers grown on GaAs(100) by metal organic vapour phase epitaxy (MOVPE). The main points of interest are crystalline quality, free carrier concentration and interface sharpness. It is shown that n-type conductivty is achieved by Ga implantation in ZnSe but the annealing process (870°C, 30 s) leads to a p-type interface layer in the GaAs due to Zn diffusion. Furthermore, the beneficial effect of growth interruptions to the sharpness of ZnS/ZnSe multiquantum-well interfaces is demonstrated.
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    URL: http://dx.doi.org/10.1002/amo.860030139
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    Control of composition and substitutional acceptor density during crystal growth of CdTe (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 289-293 
    Details
    ISSN: 1057-9257
    Keywords: II-VI compounds ; CdTe ; Bridgman growth ; Control of stoichiometry ; Vacancy correlation ; IR transmission ; Carrier concentration ; Substitutional acceptors ; Vacancy correlation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A correlation between carrier concentration and the concentration of important substitutional acceptors (AgCd, CuCd, PTe) determined from photoluminescence analysis is reported for p-and n-type CdTe crystals grown by various Bridgman techniques. We consider that the results show that the concentrations and distribution coefficients are controlled by the densities of Cd(Te) vacancies which are present under crystal growth conditions.
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    URL: http://dx.doi.org/10.1002/amo.860030141
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    Depth-resolved cathodoluminescence of ZnSe epilayers (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 295-299 
    Details
    ISSN: 1057-9257
    Keywords: Cathodoluminescence ; Strain ; ZnSe ; Depth profiling ; Defects ; Impurities ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In This paper we illustrate the use of an electron beam of variable energy to get depth information on the strain, impurity and defect distribution in ZnSe epilayers. From the increase in splitting of the free light and heavy hole exciton bands with increasing electron beam energy we deduce that the strain increases with depth. From the increase in the luminescence intensity of the impurity and defect bands compared with the luminescene intensity of the free heavy hole exciton band with increasing electron beam energy we deduce that the impurity and defect densities also increase as a function of depth.
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    URL: http://dx.doi.org/10.1002/amo.860030142
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    Neural network analysis of molecular hyperpolarisabilities (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 19-26 
    Details
    ISSN: 1057-9257
    Keywords: Neural network ; Hyperpolarisabiiity ; Dipole moment ; Nitrobenzenes ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A standard back-propagation neural netwrok is trained to predict the hyperpolarisability β of substituted nitrobenzenses as reported from EFISH experiments. Learning is faster with 13C NMR chemical shifts as input than with standard substituent constants and the predictions are somewhat better. The dipole moments μ can be predicted at the same time as β, but training to high precision is then much slower. Developments of this approach may be useful in screening out molecules of high β for synthesis and experimental study.
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    Electronic properties of polydiheteroarylenemethines: Electrical conductivity (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 43-49 
    Details
    ISSN: 1057-9257
    Keywords: Conducting polymers ; VRH ; Polarons ; DC conductivity ; AC conductivity ; Photo conductivity ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Polydiheteroarylenemethines show a relatively high electrical conductivity. Two-coplanar-electrode measurements give a high surface conductivity of 10-9 S/□ and a high mobility up to 1 cm2 V-1. Depending on the type of side group, doping with iodine served to raise the conductivity by five orders of magnitude. Optical absorption analysed with DC and AC conductivity data revealed two components in the transport process: A VHR (variable range hopping) process shifting to a band tail polaronic process as the degree of polymerisation increases, corresponding to a very characteristic transition in the AC conductivity. The hopping process corresponds to an AC conductivity frequency power law dependence of ω0.66, whereas the polaronic process corresponds to a power law dependence of ω0.1.
    Additional Material: 7 Ill.
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    Microlithography: An overview (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 55-74 
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    ISSN: 1057-9257
    Keywords: Microlithography ; X-ray lithography ; Electron-beam lighography ; Photolithography lon-beam lithography ; Resists ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Additional Material: 24 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860040203
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    Chemically amplified resists: Chemistry and processes (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 83-93 
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    ISSN: 1057-9257
    Keywords: Microlithography ; Resists ; Electronic materials ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Continued advances in mocroelectronic device fabrication are trying the limits of conventional lithographic techniques. In particular, conventional photoresist materials are not appropriate for use with the new technologies that will be necessary for sub-0.5 μm lithography. One approach to the desing of new resist chemistries involves the concept of chemical amplification, where one photochemical event can lead to a cascade of subsequent reactions that effect a change in solubility of the parent material. The most well-known chemically amplified resists utilise photchemically generated acid to catalyse crosslinking or deprotection reactions. This paper reviews the acid generator, crosslinking, deprotection and depolymerisation chemistries that have been evaluated for chemical amplification resist processes. Additionaly, process characteristics and resist performance relative to the process environment are addressed.
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    URL: http://dx.doi.org/10.1002/amo.860040205
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    Modelling of resist performance (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 165-175 
    Details
    ISSN: 1057-9257
    Keywords: Simulation ; Modelling ; Resists ; Chemical mechanisms ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Simulation of lithographic processes uksing novolac/diazonaphthoquinone resists has become widespread over the past 15 years. Several refinements to the original Dill model have been made to account for experimentally observed behavior. Models have also bee extended to cover other resist chemistry, including electron beam resists, chemically amplified resists and surface-imaging approaches. While these models are not yet mature, useful insight to the chemical mechanisms and processing can be gained through their use.
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    Molecular image-processing devices based on chemical reaction systems. 2: Implementation of blum-type algorithms (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 191-201 
    Details
    ISSN: 1057-9257
    Keywords: Molecular computing ; Molecular neurocomputer ; Molecular image-processing devices ; Computational complexity ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Potentialities for impliementing Blum-type algorithms based on chemical and biochemical dynamical media are discussed. These media proved to be efficient for performing some primitive operations important for image processing.
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    URL: http://dx.doi.org/10.1002/amo.860040303
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    Langmuir-Blodgett films of a benzothiazolium dye containing a crown ether ring (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 225-232 
    Details
    ISSN: 1057-9257
    Keywords: Langmuir-Blodgett film ; Structure ; Chromo-ionophore ; Tricosanoic acid ; Mercury ; Surface plasmon resonance ; Polarised absorption spectroscopy ; Ellipsometry ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The structure of Langmuir-Blodget (LB) films built up from a novel benzothiazolium steryl dye containing a 1, 10-dithia-18-crown-6 ether group has been investigated using ellipsometry and polarised absorption spectroscopy. The Y-type deposition results in a uniaxial film with a thickness of 2.18 ± 0.08 nm per monolayer and an index of refraction of 1.57 ± 0.03. the chromophore parts of the moelcule exhibit an in-Plane orientation. The influence of mercury vapouron the LB films has been investigated using the technique of surface plasmon resonance.
    Additional Material: 8 Ill.
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    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040401
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    Quadratic electro-optic non-linearity of a conjugated porphyrin polymer measured in the Q-band one-photon resonance region (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 277-283 
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    ISSN: 1057-9257
    Keywords: Porphyrin polymer ; Non-linear optics ; Quadratic electro-optic effect π-Conjugation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We reprot linear and non-liner optical experiments on a new edge-linked porphyrin polymer that is soluble in pyridine/chlorinated solvent mixtures and that produces optical quality thin films by spin coating. This linear absorption properties of the polymer indicate that it posseses an extended intermacrocycle π-conjugation. This results in a strong red shift of the macrocycle-derived Q-band with the polymer peak at 874 nm (1.42 eV) in solution and 838 nm (1.48 eV) in solid films compared with a monomer solution peak at 642 nm (1.93 eV). The polymer possesses a large Stark-shift-related DC Kerr electro-optic non-linearity with peak responses in the real and imaginary part of X(3) (-ω; 0, 0, ω) of ReX(3) = -7.2 × 10 -8 esu at 849 nm (1.46 eV) and lmX(3) = 6.7 × 10-8 esu at 855 nm (1.45 eV). This response is 3-10 tiems larger that that reported for quasi-one-dimesional conjugated polymers and enhancements can be anticipated. Detailed examination of the electro-optic response spectra shows several interesting features which indicated that the usual phenomenological models of molecular Stark shifts do not provide a full description of the abserved behaviour. Future studies are planned to look more closely at the nature of the electro-optic response.
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    Diary of conferences and symposia (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 177-178 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040211
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    Electrical characteristics of polypyrrole composites at microwave frequencies (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 253-263 
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    ISSN: 1057-9257
    Keywords: Polypyrrole ; Conducting polymer composites ; Electrical modelling ; Microwaves ; Radar-absorbing material ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The microwave absorption and reflection characteristics of composites of polypyrrole with paper, cotton cloth and polyester fabrics have been evaluated. Refiectivity measurements in the range 2-18 GHz and plane wave modelling have revealed impedance charateristics with a common transition rgion. Relationships between substrate material, polymer loading and electrical performacne have been explored. Polarisation characteristics have alos been measured. The electrical model has been successful in predicting the performance of both Salisbury screen and Jaumann multilayer designs of radar-absorbing material.
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    Cleavage of silicon-carbon bonds and relative rates of hydrolysis of ormosil precursors for optical materials (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 285-291 
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    ISSN: 1057-9257
    Keywords: ORMOSIL ; hybrid ; sol-gel ; 1H NMR ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: 1H NMR spectroscopy of methyltrimethoxysilane (MTMS) has revealed that cleavage of the Si - C bond occur during hydrolysis in the presence of HCI. A mechanism is suggested involving nuleophillic attack by CI- with electrophilic promotion. Optical materials based on tetramethoxysilane (TMOS) and MTMS are vsually transparent and 1H NMR reveals the similarity of the hydrolysis rates of these precursors under acid catalysis. 1H NMR indicates that residual unhydrolysed methoxide groups in the finished optical materials are a possibility.
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    Diary of conferences and symposia (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 315-317 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040411
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    High-density and optical non-linearity effects in epitaxially grown ZnTe layers (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 33-39 
    Details
    ISSN: 1057-9257
    Keywords: High-density luminescence ; Non-linear transmission ; ZnTe ; Metal-organic vapour phase epitaxy ; Inelastic exciton scattering ; Electron-hole plasma ; Pump-and-probe method ; Exciton screening ; Band gap renormalization ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We investigated the high-density luminescence and non-linear transmission of ZnTe layers grown by metal-organic vapour phase epitaxy (MOVPE). For the high-density luminescence we compared ZnTe layers on (001) GaAs substrate with free-standing ZnTe layers of equal thickness. At high excitation intensities a strong luminescence P band appears a few meV below the free exciton energy which is assigned to resonant exciton-scattering processes. A second strong luminescence N band occurs only in free-standing layers. It shows a remarkable red shift with increasing intensity and becomes the dominant emission for an excitation intensity Iexc 〉 1.5 MW cm-2. This lower-energy band was interpreted as electron-hole plasma recombination.The optical non-linearity of thin ZnTe layers in the excitonic region was investigated by pump-and-probe experiments at 2 K and room temperature (RT). For these experiments we used two different pump energies, one above (at 2 K and RT) and one below (at 2 K) the band gap energy. In all cases a red shift and a large non-linear decrease in the excitonic absorption with increasing pump intensity was observed. The experimental results can be explained by many-body effects of exciton screening.
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    Optical non-linearities and excitation dynamics in II-VI bulk and epitaxial materials (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 15-32 
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    ISSN: 1057-9257
    Keywords: II-VI materials ; Epitaxial layers ; Excitons ; Dynamics ; Resonant spectroscopy ; Time-resolved spectroscopy ; Shallow impurities ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Excitonic processes in the band edge regime determine the optical properties of II-VI bulk and novel epitaxial materials. The interdependences of excitonic systems (i.e. free and bound excitons), high-density systems (e.g. biexcitons) and the transition into the electron-hole plasma state are of high complexity and depend sensitively on sample quality and purity, dopant concentration, excitation condition and density, etc. Resonant excitation spectroscopy and time-resolved analysis of creation and decay processes provide valuable experimental access to clarification of the above-mentioned mutual interactions. In this paper recent results obtained using these methods are surveyed.In the first part the development of luminescence and resonant excitation of bound exciton systems is treated under various excitation densities, for high excitation levels accompanied by biexciton formation and exciton-exciton collision processes. The specific properties observable when using heteroepitaxial structures instead of conventional bulk samples are discussed.In the second part the time characteristics of excitonic transitions are evaluated for various impurities, dopants and dopant concentrations, excitation via particular resonant excitation channels, and various excitation densities. Relaxation and conversion channels between excitonic systems are analysed, in particular in strained heteroepitaxial systems which show splitting effects of the bands from which the carriers stem. Time-resolved analysis is demonstrated to be extremely helpful for the analysis of unknown excitonic systems and transitions. Methods of varying the characteristic time constants are discussed, in particular with regard to intentional changes in impurity contents and excitation densities which are interesting for any application.
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    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040301
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    A model of molecular electronics based on the concept of conjugated lonic-hydrogen bond systems (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 203-218 
    Details
    ISSN: 1057-9257
    Keywords: Conjugated ionic-hydrogen bond systems ; Biostructures ; Biomolecules ; Molecular electronics ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A new model of lmolecular electronics is proposed as an alternative to the ‘soliton logic’ developed by Carter. The model is based on the principles of continuity of conjugated ionic-hydrogen bond systems (CIHBSs) in the construction of supramolecular structures and conjugation through the hydrogen bond in energy transduction. It is presumed that these principles are realized in biostructures. The Concept implies a symmetrica oligomeric organisation of supramolecular structures and an oscillatory mode of their functioning. The basic architecture and basic elements have been identified. The basic architecture is determined by periodic CIHBSs. The latter have been analysed in proteins, nucleoproteids and biomembranes. The basic elements contain groups capable of building in CIHBSs. Charge generators, valves and other basic elements contain groups capable of building in CIHBSs. Charge generators, valves and other basic elements have been distinguished among biomolecules. Oligomeric enzymes have been suggested as functional prototypes of molecular processors-multivibrators where CIHBSs form Feedback loops and Provide energy recuperation. Technologcal aspects of designing molecular electronic devices on CIHBS principles have been considered. The most challenging and complicated problem is the creation of supramolecular structures with properties which can be specified in advance. Synthesis of membrane two-dimensional active media capable of storing and processing information in the mode of parallel fluxes is suggested as the most promising route for the fabrication of biochips.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040304
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    Two-Wavelength switching of luciferase activity using caged compounds (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 349-354 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Firefly luciferase, luciferin, 1-(3,4-dimethoxy-6-nitrophenyl) elthyl ATP and 1-(2-nitrophenyl) ethyl acetic acid were immobilised in an agarose gel matrix. By illuminating the gel with 350 nm light through a mask, a positive bioluminescent pattern was written on to the gel by releasing ATP in the illuminated areas. The gel was then illuminated with a brpadbnand UV light through a second mask to release acetic acid, lowering the local pH and deactivating the enzyme. This produced a negative image of the second mask superimposed on the positive image of the first mask.The system represents a two-wavelength switch in which one wavelength of light activates the enzyme while a second deactivates it. This demonstrates the feasibility of using biological molecules as logic element in future devices.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040506
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    Dynamic displacement anisotropy of atoms, streamer discharges and phonon focusing in BeO and CdSe crystals and I-VII compoundsPresented at European II-VII Workshop, Aachen, 1993. (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 355-363 
    Details
    ISSN: 1057-9257
    Keywords: Anisotropy ; Dynamics of atomic displacements incomplete electric breakdown ; Phonon focusing ; Streamer discharges ; Alkali halide crystals II-VI compounds ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Streamer discharges at 77 K and crytallographically oriented surface spark breakdown at 295 K have been obtained in BeO crystals. An inverted temperature dependence has been found for the breakdown anisotropy compared with that in CdSe crystals. It is shown that the temperature dependences of the excitation thresholds of the incomplete electric breakdown at different crystallographic orientations in dielectrics as well as those of the streamer discharges in hexagonal semiconductors are controlled by the anisotroply of ionic dynamic displacements. The directions of maximum phonon focusing have been calculated in the localoisation planes of the incomplete breakdown in NaCl, KBr and LiF crystals at room temperature in accordance with well-known breakdown model along phonon streams. It is shown that the alkali halide breakdown data do not agree with this model. An anisotropy is predicted of the dynamic displacement of atoms in alkali halide crystals as well as in the basis plane and mirrorsymmetric directions of planes containing the crystallographic c-axis in hexagonal II-VI compounds, which allows us to explain the observable particularities of the discharge anisotropy in both cubic and hexagonal crystals.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040507
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    Growth of yttrium oxide thin films from β-diketonate precursor (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 389-400 
    Details
    ISSN: 1057-9257
    Keywords: Yttrium oxide ; Atomic layer epitaxy ; β-Diketonate precursor ; Silicon substrate ; Sapphire ; Soda-lime glass ; Corning glass ; Buffer layer ; Atomic force microscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Yttrium oxide thin films were deposited in a flow-type ALE reactor from Y(thd)3 (Hthd ≡ 2,2,6,6-tetramethyl-3,5-heptanedione) and either ozone or oxygen. The influence of the substrate and source temperatures, pressure and pulse durations on the film growth on soda-lime and silicon substrates was studied. Films were also grown on Corning glass, sapphire and Si/CeO2 substrates to study the effect of the substrate on the growth rate and crystallinity of the films. Spectrophotometry, XRD and AFM were used to determine the optical properties, thickness, crystallinity and surface morphology of the films. All the films deposited with ozone were crystalline, but differences in preferential orientation depending on the substrate were observed. The growth rate with ozone was about 0.8 Å cycle-1 on all substrates except sapphire where it was higher. The films deposited with oxygen were less crystalline and the growth rate was significantly lower than in depositions with ozone under the same growth conditions.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040602
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    Guided Wave Optics. A. R. Mickelson. Thomson International, London, 1993, ISBN 0 442 00715 9, 254 pp. £49.50 (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 433-433 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040609
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    Growth of chromium-doped alumina thin films by metal-organic chemical vapour deposition (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 337-341 
    Details
    ISSN: 1057-9257
    Keywords: Cr-doped alumina ; Metal-organic chemical vapour deposition ; Thin film ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Amorphous thin films of chromium-doped alumina were grown from Al(OiPr)3 (iPr, Isopropyl) and Cr(CO)6 on silicon and quartz substrates by chemical vapour deposition at 673 K. The films were annealed at 1223 and 1473 K to form chromium-doped γ-Al2O3 and γ-Al2O3respectively. The lattice constant a of the γ-Al2O3thin films enlarged with increasing Cr Concentration. The lattice constant a (=b) of the α-Al2O3 thin films increased while the lattice constant c decreased with increasing Cr concentration. UV-visible spectra of the annealed films showed maximum absorptions near 380, 500 and 690 nm.
    Additional Material: 7 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860040504
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    Prototype pattern recognition devices using firefly luciferase (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 381-386 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040510
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    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040601
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    Nearly resonant third-order optical non-linearity in c60 cast films (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 413-416 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We have carried out measurements of the third-order optical non-linearityX(3) of C60 cast films using the z-scan technique. The measurements have shown that two-photon absorption is the dominant non-linear process around the 3.76 eV absorption region. The real and imaginary parts of X(3) of C60 films have been measured at 665 nm are found to be 2.8 × 10-8 and -3.2 × 10-8 esu respectively.
    Additional Material: 4 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860040605
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    Molecular Electronics and Molecular Electronic Devices. Kristof Sienicki (ed.). Volume 1, CRC Press, Boca Raton, FL, 1993, ISBN 0-8493-8061-9, 249 pp., £70.00 hardback. Volume 2, CRC Press, Boca Raton, FL, 1993, ISBN 0-8493-8062-6, 274 pp., £113.50 hardback. Volume 3, CRC Press, Boca Raton, FL, 1994, ISBN 0-8493-8063-4, 260 pp., £82.00 hardback (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 431-432 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040608
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    Structure and conductivity of liquid crystal channel-like linic complexes of taper-shaped compounds (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 303-313 
    Details
    ISSN: 1057-9257
    Keywords: Columnar phase ; Self-assembly ; Ionic conductivity ; Liquid crystal ; Hemi-phasmid ; Crown ether Poly(ethy1ene oxide) ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Molecular packing and electrical conductivity were studied in complexes of alkali trifluoromethanesulphonates with low-molar or polymeric compounds containing both taper-shaped mesogens were esters of either 3,4,5-tris [p-(n-dodecan-l-yloxy) benzyloxy] benzoic acid (I) or 3, 4, 5-tris (n-dodecan-l-yloxy) benzoic acid (II). In the hexagonal columnar liquid crystal phase the tapered mesogens fan out from the centre of the column, with the ionic receptors forming the central channel and the aliphatic tails constituting the continuum matrix. In the case of side-chain polymethacrylates the column core also contains the backbone chain. The DC conductivity σ of unoriented samples increases greatly at the crystal-columnar transition, with only a minor further change upon columnar-isotropic transition. σ was in the range 10-9 - 10-6 in the columnar phase 40-90 °C, whilst the activation energies for conduction were between 28 kcal mol-1 for the crown ether and only 2 kcal mo-1 for the complex of LiCf3SO3 with the non-polymeric ester of tri(ethylene oxide) with I.
    Additional Material: 8 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860040410
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    Themal spray and adhesive bonding of optical fibres to high-temperature compsie materials (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 327-335 
    Details
    ISSN: 1057-9257
    Keywords: Optical fibres ; Thermal spray coatings ; Smart materials ; High-temperature composites ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Microstructural characteristic were identified for three surface-mounted optical fibre sensors which were thermal spray bonded to high-temperature composite materials. The primary objective was to determine the defect generation mechanisms that occur during thermal cycling and to make processing and testing recommendations that would optimise the sensor performance. A second objective was to identify areas of microstructural research that would have the most significant impact on the development of high-temperature smart materials.The smart material systems of the present study were comprised of (1) silica optical fibre sessors bonded to titanium matrix composites (TMCs) using a nickel-based thermal spray, (2) silica optical fibre sensors bonded to TMCs using ceramic cement and (3) sapphire optical fibre sensors bonded to titanium matrix composites (TMCs) using a nickel-based thermal spray, (2) silica optical fibre sensors bonded to TMCs using ceramic cement and (3) saphire optical fibre sensors bonded to carbon-carbon composites (CCCs) using ceramic cement. The thermal and prior to any thermal stresscycling. In combination with the non-metallic spheroidal inclusions of the titanium matrix, the microcracking provided a mechanism for disbonding the optical fibres with a subsequent loss of sensor performance. A high degree of kporosity in both systems containing ceramic cements significantly reduced the interfacial bonding area. This, combined with the inherent ceramic brittleness, caused disbonding of the optical fibres in the cemented systems.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040503
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