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  • 1
    Electronic Resource
    Electronic Resource
    Optical phonons in nanosize GaAs and AlAs clusters in an InAs matrix (1999)
    Springer
    JETP letters 70 (1999), S. 469-475 
    Details
    ISSN: 1090-6487
    Keywords: 81.05.Ys ; 61.46.+w ; 78.30.Fs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A Raman scattering method is used to investigate structures containing nanosize GaAs and AlAs clusters, which were grown by molecular-beam epitaxy on InAs substrates by the mechanism of self-organized growth under mechanical stress. A large shift of the phonon lines of GaAs and AlAs clusters with respect to the phonon frequencies in the bulk materials (36 and 24 cm−1 for GaAs LO and TO phonons and 55 and 28 cm−1 for AlAs LO and TO phonons, respectively) is observed in the spectra. This fact is explained by the presence of strong mechanical stresses in the GaAs and AlAs clusters. A comparison of the experimental data with the computed strain dependences of the phonon frequencies shows that the GaAs and AlAs clusters are pseudomorphic, i.e., they do not contain dislocations, which lead to relaxation of the mechanical stresses. In the interval between the InAs TO and LO phonon frequencies, the Raman scattering spectra contain features associated with interfacial phonons. The position of these features also attests to the formation of three-dimensional GaAs and AlAs islands and are described well by a continuum dielectric model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.568198
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  • 2
    Electronic Resource
    Electronic Resource
    Surface of n-type InP (100) passivated in sulfide solutions (1999)
    Springer
    Semiconductors 33 (1999), S. 416-420 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract X-ray photoelectron spectroscopy, the Kelvin probe method, and Raman scattering are used to study the properties of the surface of n-type InP (100) passivated by ammonium sulfide dissolved in water or in t-butyl alcohol. Both treatments are found to cause a reduction in the depth of the depleted skin layer, a shift of the surface Fermi level toward the conduction band, and an enhancement of the electron work function and increase in the ionization energy of the semiconductor. The processing in the alcohol solution yields a stronger effect than processing in an aqueous solution. For sulfidization in an alcohol solution the surface Fermi level shifts by 0.2 eV, while the ionization energy increases by 0.53 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187895
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical effects during formation of the electronic surface structure of III–V semiconductors in a sulfide solution (1999)
    Springer
    Physics of the solid state 41 (1999), S. 793-795 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electronic properties of the (100) surface of n-GaAs, p-GaAs, and n-InP semiconductors treated with various sulfide solutions have been studied. Sulfide treatment was shown to increase the photoluminescence intensity, decrease the depth of the near-surface depleted region in the semiconductor, and shift the surface Fermi level toward the conduction band. These effects are the stronger, the higher the sulfur chemical activity in the solution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130875
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  • 4
    Electronic Resource
    Electronic Resource
    Current-voltage characteristics of Na/p-GaP(110) Schottky diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4486-4487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier of Na deposited onto ultrahigh vacuum cleaved p-type GaP has been determined by in situ current-voltage measurements. The Schottky barrier height of 1.10 eV for this low work function metal contacts is consistent with a general weak metal dependence for barrier formation on GaP(110).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352183
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  • 5
    Electronic Resource
    Electronic Resource
    Raman monitoring of semiconductor growth (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7330-7333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper it is demonstrated that Raman spectroscopy can be used for in situ online monitoring of semiconductor layer growth. For this purpose an ultra-high-vacuum chamber was designed to suit molecular beam epitaxial growth as well as simultaneous optical measurements utilizing a multichannel detection Raman system. As a result Raman spectra can be taken while growth progresses. As shown by the example of InSb growth, they provide information on the interface chemistry, crystal quality of the growing layer, and the growth mode as well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356644
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  • 6
    Electronic Resource
    Electronic Resource
    Suppression of interface reaction and modification of band offset by Sb interlayers in CdS/InP (110) heterojunctions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4089-4091 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Core and valence level photoelectron spectra demonstrate that the deposition of monatomic interlayers at the interface between CdS and InP(110) efficiently suppresses the interface reaction characteristic for this system, and has a marked influence on the valence-band offset ΔEv.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352837
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  • 7
    Electronic Resource
    Electronic Resource
    Transport measurements of Sb contacts to InP(110) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 739-741 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of antimony contacts to vacuum cleaved n- and p-type InP(110) surfaces were studied using current-voltage and capacitance-voltage techniques. While the Sb/n-InP(110) interface forms an "ohmic'' contact, an extremely large Schottky barrier was found at Sb/p-InP(110) contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99341
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  • 8
    Electronic Resource
    Electronic Resource
    Molecular-beam-epitaxy growth of CdTe on InSb (110) monitored in situ by Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4060-4065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe epitaxial layers were deposited on clean cleaved InSb(110) substrates by molecular-beam epitaxy at room temperature and elevated temperatures. The formation of interface and layer was investigated using Raman spectroscopy as a growth monitor, i.e., Raman spectra were taken on line without interruption of the deposition process. Fabry–Pérot interference of the incident as well as the scattered light within the heterostructure leads to a characteristic modulation of the substrate phonon scattering intensity. The modulation is calculated and serves as a measure for the layer thickness. For the deposition at elevated temperatures the true surface temperature is determined from the InSb TO phonon frequency shift. While at a substrate temperature of 150 °C the crystalline quality of the CdTe layer was improved compared to room-temperature growth, the deposition of CdTe at 300 °C resulted in the formation of a layer consisting of In2Te3 and liberated Sb. The effect of the laser radiation on the growth process at different temperatures is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359862
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  • 9
    Electronic Resource
    Electronic Resource
    Optical spectroscopy of epitaxial Ga2Se3 layers from the far infrared to the ultraviolet (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3196-3199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Ga2Se3 layers were grown on GaP (100) and GaAs (100) by metal–organic chemical vapor deposition and the heterovalent exchange reaction, respectively. Measurements of the sample reflectance were carried out in the spectral range from 70 to 50 000 cm−1 (∼10 meV−6.2 eV). The dielectric functions in the far infrared were determined from the reflectance measurements and are dominated by strong phonon features of the substrate and the layers. Substrate related multiphonon absorbances and Fabry–Perot interference dominate the mid infrared range. The spectra in the visible spectral range reveal Fabry–Perot interferences up to 2.6 eV indicating a fundamental band gap energy in the blue spectral range in contrast to the previously reported lower value of 2 eV. Further electronic transition energies were observed at 3.9, 4.7, and 5.0 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361264
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  • 10
    Electronic Resource
    Electronic Resource
    Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2459-2465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) and Raman measurements were performed on AlInAs grown lattice matched to InP by molecular beam epitaxy at reduced growth temperature (Ts). The PL of layers grown at Ts above 500 °C is dominated by excitonic emission, whereas for lower Ts donor-acceptor related transitions prevail. Below a critical Ts of 450 °C a marked shift towards lower emission energies with a maximum shift near 400 °C is observed that is attributed to a modified band edge due to clustering. Comparable trends are detected by Raman spectroscopy. The observed reduction of the separation of the InAs- and AlAs-like longitudinal optical phonon modes (LOInAs and LOAlAs) demonstrates local internal strain to be present as a result of clustering. This effect reaches a maximum for Ts at 400 °C. A shift of the LOInAs solely accounts for this behavior. In addition strong asymmetric broadening of the LOAlAs-phonon line observed on low Ts material indicates an increasing reduction of the correlation length and suggests the structural disorder to be correlated with the AlAs sublattice. Taking into account the pressure dependence of the AlInAs energy gap and the frequency shift of the LOInAs phonon, the local internal strain equivalent pressure was calculated from the PL and Raman results, respectively, giving similar values of up to 5 kbar for material grown at 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357597
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