ISSN:
1057-9257
Keywords:
Zinc sulphide
;
Zinc selenide
;
t-butanethiol
;
Precursors
;
Purification
;
Multilayers
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
A variety of problems in the growth of wide band gap II/VI materials by MOVPE has been addressed by the use of alternative precursors. The quality of grown layers of ZnSe has been greatly improved by adduct purification of Me2Zn. Using 4,4′-bipyridyl, the recovery of Me2Zn is variable because of the insolubility of 4,4′-bipyridyl in diethylether. Higher yields can be obtained using the ether-soluble base 1,3-bis(4-pyridyl)propane.tBuSH has been introduced for the growth of ZnS. Being a liquid, this compound is easy to handle and it allows growth of high-quality ZnS at temperatures down to 325°C with very little gas phase pre-reaction with Me2Zn. Growth of ZnSxSe1 - x at atmospheric pressure using H2S and Et2Se as the group 16 precursors allows excellent stoichiometric control, since the ratio of S : Se in the grown solid is similar to that of H2S : Et2Se in the gas phase for all compositions. Finally, multilayer structures have been grown at low pressure with excellent interface abruptness and goodquality material. However, the ternary layers are all much higher in sulphur than expected from the gas phase composition and the composition of the ternary appears to be influenced by the nature of the surface on which it is growing.
Additional Material:
4 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860030123
