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  • 1
    Electronic Resource
    Electronic Resource
    HSP70-2 is part of the synaptonemal complex in mouse and hamster spermatocytes (1996)
    Springer
    Chromosoma 104 (1996), S. 414-421 
    Details
    ISSN: 1432-0886
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Mouse spermatogenic cells are known to express HSP70-2, a member of the HSP70 family of heatshock proteins. The purpose of the present study was to characterize further the expression and localization of HSP70-2 in meiotic cells of mice and hamsters. After separating mouse spermatogenic cells into cytoplasmic and nuclear fractions, proteins were separated by two-dimensional gel electrophoresis and detected with HSP-specific antibodies. Of several HSP70 proteins identified in the cytoplasm, only HSC70 and HSP70-2 were also detected in the nucleus. Immunocytological analyses of spermatocyte prophase cells revealed that HSP70-2 was associated with the synaptonemal complex. Surfacespread synaptonemal complexes at pachytene and diplotene stages labeled distinctly with the antiserum to HSP70-2. Synaptonemal complexes from fetal mouse oocytes failed to show any evidence of HSP70-2. Reverse-transcriptase-polymerase chain reaction (RT-PCR) analyses of gene expression confirmed this sex specificity; Hsp70-2 mRNA was detected in mouse testes, but not ovaries. These findings are suggestive of a previously unsuspected sexual dimorphism in structure and/or function of the synaptonemal complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00352265
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of Electric Fields on Hydrogen-like Excitons (1960)
    [s.l.] : Nature Publishing Group
    Nature 187 (1960), S. 51-51 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] We wish to point out that the interaction of an exciton with an electric field may be more easily observed. Suppose the exciton is describable in te?ms of a hydrogen-like s-function. Then it can be shown that in an electric field F its energy is decreased to a first approximation by : A E == - y. ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/187051a0
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  • 3
    Electronic Resource
    Electronic Resource
    Diffusion of Zinc in Gallium Arsenide (1958)
    [s.l.] : Nature Publishing Group
    Nature 182 (1958), S. 1158-1158 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The conditions under which one might observe this effect are as follows. We define a critical concentration N Q of zinc atoms above which most of them will not be ionized, and below which most of them will be. Then we require the surface concentration to be greater than N0 and the intrinsic number ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/1821158a0
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  • 4
    Electronic Resource
    Electronic Resource
    Space-Charge Currents in Gallium Arsenide (1961)
    [s.l.] : Nature Publishing Group
    Nature 189 (1961), S. 297-298 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Wafers of semi-insulating gallium arsenide were prepared from bulk ingots by cutting grinding and etching. Typical dimensions were 3 x 3 x 0-15 mm. Tin contacts of 0-5 mm. diameter were alloyed at the centres of the two large faces. This configuration makes any surface leakage paths between ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/189297a0
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  • 5
    Electronic Resource
    Electronic Resource
    GLIAL CELLS IN NEUROTOXICITY DEVELOPMENT (1999)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Pharmacology 39 (1999), S. 151-173 
    Details
    ISSN: 0362-1642
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine , Chemistry and Pharmacology
    Notes: Abstract Neuroglial cells of the central nervous system include the astrocytes, oligodendrocytes, and microglia. Their counterparts in the peripheral nervous system are the Schwann cells. The term neuroglia comes from an erroneous concept originally coined by Virchow (1850), in which he envisioned the neurons to be embedded in a layer of connective tissue. The term, or its shortened form-glia, has persisted as the preferred generic term for these cells. A reciprocal relationship exists between neurons and glia, and this association is vital for mutual differentiation, development, and functioning of these cell types. Therefore, perturbations in glial cell function, as well as glial metabolism of chemicals to active intermediates, can lead to neuronal dysfunction. The purpose of this review is to explore neuroglial sites of neurotoxicant actions, discuss potential mechanisms of glial-induced or glial-mediated central nervous system and peripheral nervous system damage, and review the role of glial cells in neurotoxicity development.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.pharmtox.39.1.151
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  • 6
    Electronic Resource
    Electronic Resource
    Response to late season nitrogen of upland swards in Wales (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Grass and forage science 46 (1991), S. 0 
    Details
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: During 1984 and 1985, trials at sixteen sites throughout Wales measured the yield response in upland swards from applying 40 and 80 kg N ha−1 at three dates, 20 August, 4 September and 18 September. All sites were between 230 m and 345 m above sea level. Grass yields were measured by cutting plots during October and November.Nitrogen increased the herbage dry-matter (DM) yield at all sites in both years. The yield response per kg N applied varied between sites. Mean yield response for the two years declined from 16·2 kg DM kg N−1 with 40 kg N ha−1 applied on 20 August to 8·9 kg DM kg N−1 with 80 kg N ha−1 applied on 18 September. In general there was a decline in response to N with increased rate and delay in time of application. The results indicate that responses above an optimum of 9 kg DM kg N−1 can be obtained well into September. A general rule that 1 kg N can be economically applied per 4 summed day degrees air temperature 〉6 °C remaining in the autumn up to 30 November is suggested.Delay in application and increasing N rate increased crude protein in the herbage but had only small effects on modified acid detergent (MAD) fibre and sugar. Generally, grass quality was good. Sward density assessed during the spring after nitrogen had been applied appeared to have been unaffected by the treatments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2494.1991.tb02232.x
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  • 7
    Electronic Resource
    Electronic Resource
    Radiative and nonradiative rates and deep levels in zinc selenide grown by molecular-beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1731-1736 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of chlorine-doped epitaxial layers of ZnSe have been grown by molecular-beam epitaxy. Measurements have been made of the relative intensity of the blue photoluminescence at room temperature, of the decay time of this emission, and of the concentrations of deep levels determined by photocapacitance techniques. A GaAs buffer layer improves the light emission and decreases the deep-level concentrations. Over the uncompensated donor concentration range 2×1016 to 3×1018 cm−3 the photoluminescence intensity, decay rate, and deep-level concentrations only vary by one order of magnitude. The results are consistent with the room-temperature blue emission resulting in recombination of a free hole with electrons on relatively isolated donors, this radiative recombination competing with a strong nonradiative Hall–Shockley–Read recombination via deep levels in the lower half of the energy gap. The significance of these results for the making of light-emitting diodes and lasers is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360202
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  • 8
    Electronic Resource
    Electronic Resource
    The origin of the blue luminescence in ZnSe at room temperature (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2060-2065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the blue luminescence band appearing at room temperature in ZnSe is seen in metalorganic chemical vapor deposition (MOCVD) epilayers with carrier concentration 1×1018 cm−3. The photon energy at the emission peak is the same in this material as in material with much lower carrier concentration. Properties of the blue band are surveyed to discriminate between different possible assignments. It is concluded that Shirakawa and Kukimoto [J. Appl. Phys. 51, 2014 (1980)] were correct in assigning it to a transition between a free hole and an electron bound to a donor. However, not all donors contribute. There is a cutoff energy within the spread of donor levels above which there is negligible contribution to the emission. It is suggested that the cutoff corresponds to a localization edge of the same nature as the mobility edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345591
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  • 9
    Electronic Resource
    Electronic Resource
    Kondo resonance behavior of heavy fermion f-electron materials (invited) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6088-6091 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Kondo properties of the impurity Anderson model provide a theoretical framework for relating thermodynamic and angle integrated electron spectroscopy data in many heavy fermion materials. We describe the success and the challenges of this approach, summarize a detailed analysis of CeSi2, and give a perspective on the relation to the lattice Anderson model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373421
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  • 10
    Electronic Resource
    Electronic Resource
    Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offsets by electron spectroscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2947-2954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The film thickness, chemical state, and polarization screening for a-SiN1.4 :H films deposited by glow discharge over hydrogenated amorphous silicon (a-Si:H) were determined by x-ray photoelectron spectroscopy (XPS) and Auger spectroscopy. The nitride films were observed to be single phase and the escape depth for 1400-eV electrons in the a-SiN1.4 :H film was determined to be 30 A(ring). The band offsets for the a-Si:H/a-SiN1.4 :H interface were determined by XPS and Bremsstrahlung isochromat spectroscopy (BIS) to be 1.2 eV for the valence band and 2.2 eV for the conduction band, while the band gap for a-SiN1.4 :H was found to be 5.3 eV in accordance with the optical gap. By combining optical absorption measurements with the valence-band density of states and conduction-band density of states determined by electron spectroscopy, a semiquantitative estimate of the band tailing within the nitride gap was obtained. Correlation of the defect absorption with the electron spin resonance measurements suggest that the dangling bond defect level in a-SiN1.4 :H lies approximately 2.5 eV from the nitride valence band and is, therefore, somewhat below the a-Si:H conduction band. This study has demonstrated that BIS is an effective technique for determining the conduction-band offsets in heterostructures without relying on valence-band offset or band-gap measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337842
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