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  • Articles  (180)
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  • Springer  (180)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 58 (1994), S. 121-127 
    ISSN: 1432-0630
    Keywords: 07.85 ; 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The importance of collecting the distribution of scattered X-rays in two dimensions with the “right probe” will be addressed. The data-collection method will be briefly covered and how this greatly assists the interpretation of structural features giving rise to the distributed X-ray scattering. The combination of diffraction-space mapping with multiple crystal topography will also be presented to show how any region of scattering can be related to lateral structural changes or crystal imperfections. The simulation of the diffraction profiles of structures with defects will be addressed as well as the interpretation of “unusual and strange” diffraction features observed in high resolution, which yield further useful information on the materials under study.
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  • 2
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    Applied physics 58 (1994), S. 191-195 
    ISSN: 1432-0630
    Keywords: 42.40 ; 78.20 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Holograms may be recorded in photorefractive LiNbO3:Cu with pulsed infrared light (wavelength λ=1064 nm, Q-switched Nd:YAG laser), if the crystals are previously or simultaneously illuminated with a green (λ=532 nm) light pulse. We study refractive index changes and time constants of as-grown and thermally treated crystals with different copper concentrations. A model explaining this effect is discussed.
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  • 3
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    Applied physics 59 (1994), S. 579-582 
    ISSN: 1432-0630
    Keywords: 42.65 ; 42.70 ; 72.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Two-beam coupling gain and speed of a Cr-doped strontium-barium niobate single crystal at 514.5 nm and 632.8 nm are measured to compare photorefractive origins and responses. The same single deep center and single carriers are found to be responsible for the observed photorefractivities at both wavelengths. Self-pumped phase-conjugate reflectivities are also measured at both wavelengths.
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  • 4
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    Applied physics 58 (1994), S. 87-90 
    ISSN: 1432-0630
    Keywords: 72.40 ; 73.60 ; 81.15
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Recombination and transport parameters were determined in Schottky diodes made of thin TiO2 solgel films with particle size around 50 nm. Effective recombination times are typically in the range, 10 μs〈τ〈1 ms, depending on injection level. The lifetimes are found to decrease at higher current levels, indicating bimolecular recombination kinetics due to a progressive increase in trap occupation. The mobility-lifetime product is estimated to be ≈5×10−11 cm2/V and is independent of current level.
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  • 5
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    Applied physics 59 (1994), S. 163-168 
    ISSN: 1432-0630
    Keywords: 78.70. Bj ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Samples of the near equiatomic NiSb compound were irradiated by 3 MeV electrons at 20 K or quenched from 1103 K and 1333 K and subsequently annealed isochronally. The behaviour of defects created by quench or irradiation were studied by the positron annihilation technique. Only one recovery stage was found around 425 K for quenched specimens, but two distinct stages (100 K and 425 K) were observed after irradiation. The 425 K stage is ascribed to the migration of Ni vacancies giving dislocation loops. The recombination of mobile interstitials with vacancies after irradiation is assumed to occur between 100 K and 250 K. Doppler broadening and lifetime variations of positrons as a function of the measuring temperature in these irradiation samples are discussed.
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  • 6
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    Applied physics 59 (1994), S. 563-567 
    ISSN: 1432-0630
    Keywords: 61.70 ; 72.40 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photoconductivities and photovoltaic currents of ruthenium-doped KNbO3 are orders of magnitude larger than that of undoped and ion-doped crystals. KNbO3:Ru is very sensitive for holographic recording with red light and the photovoltaic current increases sublinearly with light intensity.
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  • 7
    ISSN: 1432-0630
    Keywords: 52.25 ; 42.60 ; 35.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This work deals with the study of a plasma produced by intense XeCl-excimer-laser irradiation of a titanium surface in nitrogen-containing atmospheres. We observed that the optical emission spectra resulting from irradiation of Ti targets in various ambient atmospheres (N2, NH3, N2+H2 mixtures) contain lines of atomic and ionized species of the irradiated target material only. The spectra are almost independent of the ambient atmosphere. The expansion velocities of atomic and ionic species in the plasma plume were obtained by time-of-flight measurements at different distances from the target. Mass spectrometry measurements are also performed at low background pressure to identify non-emitting species.
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  • 8
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    Applied physics 59 (1994), S. 245-251 
    ISSN: 1432-0630
    Keywords: 71.00 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An electron trap having an energy level of 0.14 eV from the conduction band edge was found in the bulk of copper-diffused VPE-grown n-GaAs0.6P0.4 by conventional DLTS measurements and by pulse-duration dependent capacitance amplitude measurements. The capture cross section at room temperature is about 1.0×10−21 cm2 and has a weak temperature dependence. These properties are attributed to a non-repulsive center having a capturing mechanism which involves multiphonon emission processes with hardly any lattice relaxation. Evolution of the spatial distributions of the traps with time under junction electric field were studied. The results suggest that the trap is positively charged and has a high diffusivity under electric field. The center can thus be identified as positively charged interstitial copper ion rather than some form of copper complexes.
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  • 9
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    Applied physics 58 (1994), S. 423-429 
    ISSN: 1432-0630
    Keywords: 02.00 ; 42.60 ; 81.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A model was developed to investigate the effect of polarization on laser-induced surface-temperature rise in absorbing materials. GaAs is taken as a substrate material in this study. The polarization was found to significantly affect the laser-induced temperature rise on the substrate surface. This is due to the different surface absorption for the beams with different polarization directions. The laser beam with p polarization can induce higher temperature rise than that with s polarization. If the substrate has a high imaginary value in the complex refractive index, the peak laser-induced surface temperature falls concurrently. A similar effect of polarization to the laser-induced surface temperature rise can be expected to all other absorbing materials.
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  • 10
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    Applied physics 58 (1994), S. 471-474 
    ISSN: 1432-0630
    Keywords: 42.60 ; 74.70 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of YBa2Cu3O7 coated with a photoresist have been patterned by means of XeCl- and KrF-excimer-laser light projection. Lines with widths down to 3.5 μm have been fabricated without degradation in T c and j c. The technique is compared with wet-chemical etching and with ns and fs excimer-laser patterning of films without a protective layer.
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  • 11
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70 ; 74.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrathin epitaxial films of YBa2Cu3O7−δ on SrTiO3 prepared by Direct Current (DC) sputtering and pulsed laser deposition were imaged by Atomic Force Microscopy (AFM) to follow the different stages of growth of the thin films. Series of films with thicknesses between 1.2 nm and 12 nm (1–10 monolayers of YBa2Cu3O7−δ) were prepared under identical conditions, optimized with respect to electrical and structural properties, to obtain information on the mechanisms responsible for the formation of growth spirals which are commonly observed in films having a thickness of several 10 nm or more. It could be shown that few layers are formed by a layered growth mode where material is attached laterally to 2D islands which are only one c-axis unit cell in height. In a later stage of growth when about 8–10 layers have been formed, the growth process changes to a mode which is mediated by growth spirals. This could be directly monitored in the AFM images where different defect structures like vertically sheared growth fronts and dendrite-like terraces of stacked islands as well as the resulting growth spirals could be identified.
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  • 12
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    Applied physics 59 (1994), S. 209-213 
    ISSN: 1432-0630
    Keywords: 42.60 ; 81.15 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Irradiation of ceramic alumina (Al2O3) with 248 nm and 308 nm excimer-laser light results in an activation of the surface for subsequent electroless copper deposition. The dependence of this activity on laser parameters, ambient atmosphere during irradiation, and pattern size is described. The results are tentatively explained by changes in the chemical and electrochemical properties of irradiated areas.
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  • 13
    ISSN: 1573-4889
    Keywords: niobium ; oxidation ; morphology ; kinetics ; stresses
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation of niobium at high temperature (900°C) leads to reaction products with “exotic” morphologies. Morphological and kinetics analysis have been undertaken with Nb platelets. A growth mechanism of the oxide at the edges of the platelet is proposed.
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  • 14
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    Oxidation of metals 42 (1994), S. 223-237 
    ISSN: 1573-4889
    Keywords: kinetics ; scale ; oxidation ; zirconium ; purity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation kinetics of zirconium of different purities were studied over the temperature range of 600–1300°C (α- and β-phases). The structure of the oxidized specimens was examined. TGA, XRD, EPMA, SEM, metallographic analysis, and microhardness measurements were carried out. Impurity elements were found to increase the oxidation rate of technical zirconium. The mechanism of the effect of impurity elements on zirconium oxidation was shown to differ for the α- and β-phases. Activation energies were calculated for the parabolic and linear stages of oxidation.
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  • 15
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    Oxidation of metals 42 (1994), S. 249-263 
    ISSN: 1573-4889
    Keywords: kinetics ; scale ; oxidation ; hafnium ; purity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation kinetics of hafnium of different purities were studied in the temperature range of 800–1200°C. This paper concerns the structure studies of the oxidized samples. TGA, XRD, SEM methods, and microhardness measurements were used. Hafnium oxidation follows the parabolic rate law, changing with time to the linear one. Oxidation-reaction products are HfO2(moncl) and α-solid solution of oxygen in hafnium. Anomalous oxidation behavior of hafnium having a high impurity content was found in the range 800–950°C. Activation energies for the parabolic and linear oxidation stages were calculated.
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  • 16
    ISSN: 1435-1536
    Keywords: Mn(III)-poly(ethylene glycol) ; acrylonitrile ; block copolymerization ; kinetics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The kinetics and mechanism of thermal polymerization of acrylonitrile initiated by Mn(III) pyrophosphate — poly(ethylene glycol) (PEG, molecular weight 6000) redox system in aqueous sulfuric acid medium was studied in the temperature range 30–60°C. The overall rates of polymerization and the disappearance of Mn3+ were determined. The polymerization was initiated by the organic free radical produced from the Mn3+-PEG reaction and the termination was by the metal ions. The rate of polymerization of acrylonitrile was found to be directly proportional to the square of the monomer concentration and first power of PEG concentration, and inversely proportional to the concentration of Mn3+. The rate of manganic ion disappearance was found to be directly proportional to manganic ion concentration and PEG concentration, and independent of the monomer concentration. Based on these observations, a plausible reaction scheme was suggested and suitable kinetic expressions were evaluated.
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  • 17
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    Colloid & polymer science 272 (1994), S. 1-16 
    ISSN: 1435-1536
    Keywords: Polymer crystallization ; kinetics ; modeling ; POM ; PEEK
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The isothermal crystallization of two engineering polymers — POM and PEEK — was studied, both theoretically and experimentally. The experiments were performed by means of differential scanning calorimetry (DSC) and polarized light optical microscopy (OM). Building on previously developed theoretical formalisms (Avrami/Evans, Hillier and Tobin), a new procedure is presented, based on Tobin's model coupled with a modification of Hillier's calculation technique, to accurately describe the kinetics and mechanism of the crystallization of polymers from quiescent melts. First, it is shown that Tobin's model alone, without modification, is more accurate than Avrami/Evans model to describe single-mechanism processes, for a wide range of materials and for longer crystallization times, despite having exactly the same nature and number of parameters (the kinetic, nucleation and growth rate-related, parameterK and the dimensionalityn). Then, Hillier's formalism is modified and combined with Tobin's model, to accurately predict the kinetics of dual mechanism crystallization processes; a clear contrast is drawn with Hillier's Avrami-based, original procedure which uses the same number and nature of parameters, but cannot adequately predict the experimental behavior. The parameter values predicted by the model(s) and procedure presented in this work are all given, are then physically interpreted and, in the case of POM, related to independent morphological observations by polarized light optical microscopy. They are also consistent with electron microscopy observations made by other authors on the detailed morphology of the spherulitic crystallization of polymers.
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  • 18
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    Applied physics 57 (1993), S. 437-440 
    ISSN: 1432-0630
    Keywords: 78.20 ; 61.70 ; 72.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Holograms recorded under suitable conditions in photorefractive BaTiO3 exhibit an unusual dark build-up. The diffraction efficiency increases by some orders of magnitude after the recording beams are switched off, and then steadily decreases afterwards. An interpretation of this effect in terms of a two-center charge transport model is given.
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  • 19
    ISSN: 1432-0630
    Keywords: 61.70 ; 68.35 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The laser-induced solid-state explosive nucleation in amorphous media is studied analytically. The shapes of the temperature switching wave and that of the nucleation front as well as the formula for the front velocity are derived considering also self-consistent medium deformation. Two conditions of explosive nucleation reflecting the roles of latent heat emission and of deformation are formulated. It is shown that, in explosive nucleation, the rate of internal heat emission is proportional to the square of the latent crystallization heat (“superemission”) in analogy to photon superradiance in initially inverted two-level atomic systems.
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  • 20
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    Applied physics 57 (1993), S. 377-383 
    ISSN: 1432-0630
    Keywords: 07.80 ; 61.70 ; 81.10 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-resolution transmission electron microscopy (HREM) allows to study a wide range of device-relevant topics in heteroepitaxial layer structures. Quantitative HREM may be used to obtain chemical information on a near-atomic scale from interfacial transition zones. The physical background is described and demonstrated on several examples in the Al x Gal1−x As/GaAs system. The HREM contrast of antiphase boundaries in InP grown on Si was studied by image simulations and has been compared to experimental images. Silicon carbide precipitates were identified by HREM at the homoepitaxial Si/Si interface. They stem from carbon contamination prior to Si layer growth.
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  • 21
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    Applied physics 57 (1993), S. 243-247 
    ISSN: 1432-0630
    Keywords: 42.60 ; 42.80 ; 42.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract On the basis of the Helmholtz equation the far-field distribution is derived for double heterostructure lasers. The results show that the far-field distribution in the direction normal to the junction plane approaches a Lorentzian function, but parallel to the junction it may be approximated by a Gaussian function. The far-field intensity patterns have “analogous elliptic” form. It is also shown, for the first time, that the separability condition is not strictly valid for the far-field of a laser diode. Only in the vicinity of the optical axis the field can be expressed as a product of two separate functions, each of which depends only on one of the two transverse coordinates parallel and perpendicular to the diode junction.
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  • 22
    ISSN: 1432-0630
    Keywords: 42.80 ; 72.40 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Pb1−x−y Sn x Ge y Te:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range λ〈20μm. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10−2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×1013 cm Hz1/2 W−1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 1012 cm−2 s−1 to 1018 cm−2 s−1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.
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  • 23
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    Applied physics 56 (1993), S. 69-72 
    ISSN: 1432-0630
    Keywords: 61.70 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A computer simulation study of the capacitance of a surface space charge layer in undoped n-GaAs grown by metalorganic vapour phase epitaxy is presented. The effect of the deep donor level EL2 on the surface capacitance of epilayers with an ideal free surface is estimated. In order to approach the as-grown layer surface the model used is extended considering MIS and Schottky-barrier structures and their voltage-capacitance curves are analysed. The theoretical C-V dependences are compared with experimental C-V curves of a real structure including N+-GaAs substrate, undoped n-GaAs epitaxial layer containing EL2 levels and thin native oxide. Conditions are determined at which the EL2 levels as well as the native oxide film may influence the capacitance characteristics.
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  • 24
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    Applied physics 57 (1993), S. 427-430 
    ISSN: 1432-0630
    Keywords: 71.55 ; 72.20.Jv ; 72.40 ; 72.80.Ey
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Time-resolved photoconductivity measurements have been used to characterize electron traps in wide-gap n-HgO0.3Cd0.7Te for the first time. The characterization was made possible by combining the time-resolved photoconductive data with the analytical method conventionally used in DLTS spectroscopy. Two electron traps were found in the band gap with 61 meV and 79 meV below the conduction band edge, their concentrations are 1.1×1013 cm−3 and 5.8×1011 cm−3, respectively. Compared with DLTS spectroscopy, this characterization method markedly simplifies sample preparation and experimental procedure.
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  • 25
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    Applied physics 56 (1993), S. 323-327 
    ISSN: 1432-0630
    Keywords: 61.70 ; 75.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the magnetic after-effect in magnetite have been made in the temperature range 200 to 600 K. Important relaxation peaks have been observed in the temperature range 250 to 350 K (peak III) and 400 to 550 K (peak I). A study of both the dynamics and the parameters of the defects are consistent with an interpretation of peak III and peak I in magnetite as a combined after-effect due to octahedrally coordinated vacancies.
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  • 26
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    Applied physics 56 (1993), S. 329-333 
    ISSN: 1432-0630
    Keywords: 42.60 ; 61.80 ; 68.35
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new kind of surface structure was observed on polyethylene-terephthalate (PET) foils after 248 nm KrF-excimer-laser irradiation in vacuum. The laser fluences employed were around the ablation threshold. The branched fractal structures observed have a lateral dimension in the micrometer range and a heigth of 30 to 60 nm.
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  • 27
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    Applied physics 56 (1993), S. 335-341 
    ISSN: 1432-0630
    Keywords: 72.40 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effect of signal-modulated optical radiation on the characteristics of a GaAlAs/GaAs MODFET has been studied analytically. It is found that the offset voltage increases with modulation frequency and the effect of frequency is negligible above 5 MHz. The drain-source current decreases with increase in signal frequency at a constant radiation flux density, doping concentration and drain-source voltage. Studies on sheet concentration and transconductance also show that the signal frequency has a significant effect upto a certain modulation frequency (≲5 MHz) above which the effect of frequency is insignificant.
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  • 28
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    Applied physics 56 (1993), S. 417-423 
    ISSN: 1432-0630
    Keywords: 42.60 ; 82.65 ; 73.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ablation of the surface of a polyimide (Kapton™) film by single pulses of 248 nm or 308 nm radiation (∼20 ns) or 9.17 μm laser radiation (∼170 ns) was studied by photographing the emergence of the blast wave and the plume by a pulse (〈1 ns; 596 nm) of visible laser light. The dynamics of the blast wave was similar in the ultraviolet and in the infrared but the composition of the plume was obviously different. A mass of opaque solid material was ejected for as long as 2.6 μs following the IR pulse in contrast to the minute amount of solids that are seen in the ablation by UV laser pulses of ns duration. UV laser pulses of 50–400 μs duration interact with polyimide surfaces in a manner that is similar to IR laser pulses of ns duration or longer. Chemical analysis of the ablation products that are obtained under various conditions of ablation when compared to the known modes of thermal degradation of polyimide show that the reaction is a thermal process when IR laser pulses or UV laser pulses of long (〉10 μs) duration are employed. Ablation by ns UV laser pulses differs fundamentally in the chemistry of the products from all of the cases mentioned above.
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  • 29
    ISSN: 1432-0630
    Keywords: 78.30 ; 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Macroscopic defects of the GaAs surface grown by molecular beam epitaxy (MBE) have been investigated by using a micro-probing method of Raman spectroscopy. Especially, the oval defects, the most common macroscopic defects in MBE GaAs, were focused in this study. In Raman spectroscopy for the oval defect on the (100)GaAs surface, TO phonon mode of the 269 cm−1 peak was observed. This indicates that the oval defects can include the (111) growth direction or the amorphized surface. The TO/LO intensity ratios for the defects are in the range from 0.3 to 1.0. In the sample grown under the condition that the substrate temperature is 580° C with the As/Ga ratio of 20, the density of the oval defects is about 200 cm−2 at a growth thickness of 5 μm. With increasing thickness of the epilayer, the density and the size of the α-tye oval defect increased, while the TO/LO ratio decreased. From the spatial measurement by Raman spectroscopy for the α-type oval defect, it is supposed that the α-type oval defect remains in a rather good crystalline state and its orientation along the (100) growth direction is much closer to the (111) direction, but the growth direction of the defect might tend toward the (100) direction with a thicker layer.
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  • 30
    ISSN: 1432-0630
    Keywords: 42.65 ; 42.70 ; 72.40
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We present new results on the growth of semi-insulating vanadium-doped cadmium telluride crystals and their characterization by different optical techniques such as photoinduced current transient spectroscopy, absorption, photoconductivity spectra, and photorefractive wave mixing. Our joint research program aims at developing optimized crystals for efficient optical processing in the near infrared through the photorefractive effect.
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  • 31
    ISSN: 1432-0630
    Keywords: 81.40 ; 61.70 ; 61.80
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    Notes: Abstract Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.
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  • 32
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    Applied physics 54 (1992), S. 363-368 
    ISSN: 1432-0630
    Keywords: 42.60 ; 42.70 ; 81.40
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ablation of fused silica using standard excimer lasers (20–30 ns pulse duration at 193, 248, and 308 nm) and a short pulse laser system (500 fs at 248 nm) is reported. Ablation rates range from several hundred nm/pulse (193 nm or fs-laser) up to about 6 μm/pulse (308 nm). The performance of the ablation is found to depend not only on wavelength and pulse duration but also on the existing or laser induced surface quality (e.g., roughness) of the material. Special ablation phenomena are observed. At 193 nm and moderate fluence (3 J/cm2) ablation takes place at the rear side of a plate without affecting the front side, whereas at higher fluence normal ablation at the front side occurs. At 248 nm (standard excimer) the existence of two consecutive ablation phases is observed: smooth ablation at low rate is followed by explosive ablation at high rate. Using fs-pulses smooth shaped holes are formed during the first pulses, whereas high pulse numbers cause the development of a ripple structure in the ablation craters. The results lead to the conclusion that two different ablation mechanisms are involved: the first is based on two photon bulk absorption, the second on controlled surface damage in relation with (partially laser induced) singularity conditions at the surface.
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  • 33
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    Applied physics 55 (1992), S. 61-64 
    ISSN: 1432-0630
    Keywords: 42.65 ; 42.70 ; 72.40
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report on the photorefractive properties of a Cr-doped (K1−x Na x )2A−2 (Sr y Ba1−y )2−A Nb10O30 (x=0.586, y=0.659, A=1.12) single crystal in the near-infrared spectrum. The sample exhibits photorefractivity for wavelengths up to at least 840 nm where the steady-state two-beam coupling gain is found to be larger than 2 cm−1. Photorefractive gain and decay rate are measured as a function of wavelength, grating spacing and intensity. The wavelength dependence of gain fluctuations in two-beam coupling are also measured.
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  • 34
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    Applied physics 55 (1992), S. 49-54 
    ISSN: 1432-0630
    Keywords: 42.40 ; 72.40 ; 78.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report the presence of quasipermanent effects of photochromic and hole-photorefractive nature in Bi12TiO20 (BTO) at low irradiance at 514.5 nm. A new selective two-wave mixing (S2WM) detection technique was used that allows to separately detect phase and amplitude gratings. S2WM is used in this work for operating a self-stabilized recording setup which allows to produce unusually large quasipermanent effects. We also show that stabilized recording is necessary to obtain reliable information from hologram erasure experiments. Results reported in this paper show the complex nature of recording in BTO and the capabilities of stabilized recording and S2WM for fundamental and applied research on photorefractive crystals.
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  • 35
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    Applied physics 54 (1992), S. 68-71 
    ISSN: 1432-0630
    Keywords: 7340L ; 72.40 ; 72.20J ; 72.80E
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    Notes: Abstract In the present work the photoconductive response of low resistivity, n-type GaAs epitaxial layers is studied by experimentally monitoring the dependence of the photoconductive gain (PG) optoelectronic parameter upon incident photon flux and temperature. The characterized samples fall into three major categories: ion implanted (II) GaAs epilayers formed within undoped, semi-insulating GaAs substrates; GaAs epitaxial layers grown by liquid phase epitaxy (LPE) on Cr-doped, semi-insulating GaAs substrates; and ungated GaAs MESFETs.
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  • 36
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    Applied physics 54 (1992), S. 221-224 
    ISSN: 1432-0630
    Keywords: 61.70 ; 64 ; 72.20
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    Notes: Abstract The thermal evolution of monoclinic SiAs precipitates at 1050° C in silicon samples implanted with 1 and 1.5×1017 As/cm2 was followed by transmission electron microscopy (TEM) and secondary neutral mass spectrometry (SNMS). These experiments show, for the first time, the coexistence of two different states of As in silicon, i.e., the electrically active and the inactive mobile dopant, in equilibrium with monoclinic SiAs precipitates. Moreover, they provide, for the saturation concentration of As in silicon, which includes both these states, a value of 3×1021 cm−3 at 1050° C.
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  • 37
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.16D ; 61.70
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    Notes: Abstract We have used STM to study the surface morphology of thin epitaxial Ge films grown on Si(001) in the presence of the “surfactant” As. The surfactant forces layer-by-layer growth up to 12 ML Ge coverage which could partly be explained by the geometrical surface arrangement of the growing film. Beyond 12 ML coverage we observed a network of trenches which decorate the earlier described V-shaped defects inside the film. Overgrowth of such defects is studied and a mechanism discussed.
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  • 38
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    Applied physics 54 (1992), S. 517-519 
    ISSN: 1432-0630
    Keywords: 61.70 ; 62.20.Fe ; 64.70.−p
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    Notes: Abstract A theoretical model is proposed which treats the diffusion-induced decay of fragment boundary disclinations as being a micromechanism for the solid state amorphization in mechanically alloyed materials. Within the framework of the suggested model the kinetics of amorphous-phase nucleation centres (spread cores of the decayed disclinations) is studied. In doing so, kinetic equations are suggested and solved, which describe the evolution of the radius of the amorphous core of the decayed disclination.
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  • 39
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    Applied physics 55 (1992), S. 119-120 
    ISSN: 1432-0630
    Keywords: 42.60 ; 61.40 ; 68.35
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The formation of nap-type and wall-type structures on laser-irradiated polyimide (PI) films is reported for the first time. These investigations demonstrate that such structures can develop on non-melting polymer surfaces.
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  • 40
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    Applied physics 55 (1992), S. 161-166 
    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
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    Notes: Abstract The electron-deformation-thermal theory of pulsed laser-induced point defect generation in strongly absorbing semiconductors is developed. The theoretical results obtained are in a good agreement with the results of experiments carried out in Ge, GaAs, and GaP.
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  • 41
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    Applied physics 55 (1992), S. 269-273 
    ISSN: 1432-0630
    Keywords: 42.60 ; 82.65 ; 73.40
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Continuous wave laser radiation from an argonion laser in the wavelength range 275–330 nm can be used to etch polyethylene terephthalate (PET) films with as little thermal damage as from a pulsed, ultraviolet laser (248 nm or 308 nm) provided the beam is focussed to a spot of 10–100 kW/cm2 of power density and is moved over the surface at speeds at which the transit time over its own diameter (which can be looked upon as a “pulse width”) is on the order of 10–200 μs. In contrast to results which had been obtained previously on the photokinetic etching of polyimide and doped polymethyl methacrylate films under similar conditions, the sensitivity of PET to etching is 〉5-fold greater than either of these polymers and increases steadily with increasing pulse width. There is lateral thermal damage as the pulse widths increase to 〉200 μs. The material that is removed is vaporized in part. More than 20% is probably ejected in a molten state and resolidifies at the edge of the cut. There is no acoustic report similar to that seen in ablative photodecomposition. The process appears to be largely thermal in nature.
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  • 42
    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract The structure of Si implanted with high doses of yttrium has been investigated by varying implantation doses and energies. As implantation doses increase into the low 1017 cm−2 range, silicide precipitates form. The precipitates are thin and long and lie parallel to {111} planes in the Si matrix. As dopant concentrations increase, the precipitates themselves become more equiaxed, aspect ratios decrease, and precipitates densities increase until the precipitates coalesce to form a continuous buried layer of yttrium silicide within the Si matrix. The layer thickness is relatively uneven. As implant doses increase to ∼ 4×1017 cm−2, the layer thicknesses become more uniform although there are still defects present. As the implant doses increase further, the precipitate bands on either side of the continuous layer decrease due to gettering of yttrium to the layer. As the energy of the implant is increased, the appearance of the sample is similar to that of the lower energy implants except that the layer is buried deeper in the Si matrix. Observations of the silicide are consistent with its having the AlB2 structure with ordered vacancies on the Si sublattice.
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  • 43
    ISSN: 1432-0630
    Keywords: 71.55 ; 72.40 ; 76.30.Da ; 78.50
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    Notes: Abstract On the basis of a previous identification of paramagnetic defects in nominally undoped as grown BaTiO3 single crystals, we have investigated the changes of the concentrations of these centers and their optical absorptions under illumination with light of varying wavelengths. The most pronounced charge transfers occur by hole ionization of Fe4+ and — to a lesser extent — of Cr5+ and Cr4+. At low temperatures the created holes are trapped in the form of O−-ions next to Al3+ or unknown acceptor defects. Corresponding Fe4+ and O− absorptions have been identified.
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  • 44
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    Applied physics 55 (1992), S. 391-392 
    ISSN: 1432-0630
    Keywords: 42.60 ; 61.40 ; 68.55
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    Notes: Abstract The adhesion-force of thin metal films on PET foils can be significantly improved by UV excimer-laser irradiation of the polymer surface prior to metal deposition. The laser fluences required are well below the ablation threshold.
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  • 45
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    Applied physics 55 (1992), S. 30-32 
    ISSN: 1432-0630
    Keywords: 42.65 ; 42.40 ; 72.40
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    Notes: Abstract Using a ps-transient grating technique the contribution of the ps-photorefractive effect to the first-order probe-beam diffraction signal has been studied in CdTe at 1 μm investigating diffraction kinetics at different sample orientations in the thin grating regime. A fast photorefractive grating formation time during the pump pulses and a characteristic decay time of 600 ps, shorter than the free-carrier lifetime, have been observed.
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  • 46
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    Oxidation of metals 37 (1992), S. 65-80 
    ISSN: 1573-4889
    Keywords: internal oxidation ; kinetics ; alloys ; silver ; oxide particles ; coalescence
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Gravimetric measurements at low temperatures (〈600°C) and for dilute Ag-Mg alloys have given further information about the mechanism of oxide formation. This investigation shows that the fixation rate of oxygen is very high, which assumes the existence of species in an oxidized form, including one or two magnesium atoms called “elementary species” and denoted as MgO* and Mg2O*. When there are no free magnesium atoms, there is a coalescence process with the fixation of oxygen atoms or MgO* and Mg2O*: this process leads to the formation of the first “clusters” including an oxygen excess. At low temperatures, the thermal fluctuations do not permit significant changes. There is no significant increase in cluster size, but a rearrangement of these clusters toward a compact structure with the release of excess oxygen. Their size is less than 1 nm.
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  • 47
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    Oxidation of metals 38 (1992), S. 89-98 
    ISSN: 1573-4889
    Keywords: kinetics ; oxidation ; zirconium hydride
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation kinetics of zirconium-hydride powders were studied in the temperature range of 298–1378 in air at atmospheric pressure. TG, DTA, DSC, x-ray analysis, and scanning electron microscopy were used. The results obtained are in accordance with the proposed pseudo-parabolic model of zirconium-hydride oxidation. This model includes the initial linear mode of oxide growth with oxygen diffusion through a non-solid film of ZrO2 of variable depth and a stationary diffusion process followed by oxide sintering. It has been established that the activation energy of the limiting stage of oxidation (238.3 kJ/mol) coincides with the activation energy of oxygen self-diffusion in monocline ZrO2.
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  • 48
    ISSN: 1573-4889
    Keywords: sulfidation ; Fe-Cr-Al alloys ; kinetics ; structures ; sulfide compositions
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    Notes: Abstract Sulfidation of an Fe-23.4Cr-18.6Al (at.%) alloy was investigated in H2S-H2 atmospheres, $$10^{ - 6} \leqslant {\text{P}}_{{\text{S}}_{\text{2}} } \leqslant 10^2 $$ Pa, at 973 K. It was found over this pressure range that sulfidation after an early transient period followed the parabolic rate law, being diffusion controlled. An investigation was carried out of the scales formed during early transient sulfidation over the sulfur pressure range $${\text{p}}_{{\text{S}}_{\text{2}} } = 10^{ - 6} - 10^{ - 2} $$ Pa. Fully developed scales were multilayered consisting of an inner compact layer of equiaxed grains, an intermediate layer of equiaxed and columnar grains exhibiting a small degree of porosity, and an outer porous layer of distinct plates and needles. The grains of the inner and intermediate layers contained quarternary sulfide phases. The following phases were identified: spinels (CrFe)Al2S4 and (FeAl)Cr2S4, hexagonal (FeCr)Al2S4, (CrAlFe)2S3, and (CrAlFe)5S6. The plates and needles were composed of hexagonal (FeCr)Al2S4 and (CrAlFe)2S3 at $${\text{p}}_{{\text{S}}_{\text{2}} } \geqslant 10^{ - 6} $$ and 10−5 Pa from which pyrrhotite, FeS, grew at $${\text{p}}_{{\text{S}}_{\text{2}} } \geqslant 10^{ - 4} $$ .
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  • 49
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    Colloid & polymer science 270 (1992), S. 982-989 
    ISSN: 1435-1536
    Keywords: Ultrasonic relaxation ; kinetics ; hydrogen bonds ; counterion interactions ; polyelectrolytes
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The ultrasonic absorption coefficient has been measured as a function of frequency between 5 MHz and 3.1 GHz for aqueous solutions of polyacrylic acid and of its sodium, potassium, and tetraethylammonium salts. Unlike an aqueous solution of propionic acid, all polymer solutions clearly exhibit excess absorption. Within the frequency range under consideration the excess absorption spectra can be analytically represented by two Debye-type relaxation terms. At 25°C the corresponding relaxation times adopt values between 3 and 12.4 ns, and between 0.12 and 0.22ns, respectively. The former process is discussed in accordance with previous models. The relaxation of the polyacrylic acid solutions is assumed to be related to the formation of hydrogen bonds of the polymeric molecules and that of the polyacrylate solutions may be due to interactions of counterions with chain segments. The latter process, the existence of which has been first proven in this study, is likely to reflect rotational motions of carboxyl groups.
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    Colloid & polymer science 270 (1992), S. 878-884 
    ISSN: 1435-1536
    Keywords: Adsorption-desorptionkinetics ; kinetics ; ionexchange ; lysozyme ; Sephadex C-25
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The ion-exchange reaction of lysozyme with carboxymethyl Sephadex C-25 was followed by conductivity change as a function of time just after the rapid mixing of the protein solution with the Sephadex suspension. A single relaxation process was observed; the conductivity increased exponentially with time in the 100 s scale. In this process, protons were released from the Sephadex C-25 in the same time scale. The relaxation process slowed down with an increase in the lysozyme concentration, but it quickened upon the addition of HCl. On the other hand, the ζ potential on the Sephadex C-25 surface changed from a negative value to a positive one with an increase in the amount of lysozyme adsorbed on the surface. On the basis of these data, the relaxation process was attributed to the ion-exchange reaction of lysozyme with several protons of carboxymethyl groups of the Sephadex.
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  • 51
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    Applied physics 52 (1991), S. 218-221 
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.70Ph
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    Notes: Abstract Various dislocations on Ag(111) were imaged with a scanning tunneling microscope, e.g. screw dislocations, Lomer-Cottrell locks and stacking fault tetrahedron. The distortion field near a screw dislocation was measured.
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  • 52
    ISSN: 1432-0630
    Keywords: 73.30 ; 61.70 ; 81.15C
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract Magnetron-sputtered CoSi2 and TiSi2 Schottky barriers on n- and p-type GaP were investigated. Their hitherto unknown barrier heights were determined to be 0.98 eV (for CoSi2/n-GaP and CoSi2/p-GaP), 0.91 eV (for TiSi2/n-GaP), and 0.90 eV (for TiSi2/p-GaP). It was found that magnetron-sputtering induced a compensated layer near the surface, both for n- and p-type GaP, with a thickness of about 0.05 μm. As the dependence of the shift of the Mott-Schottky intercept with the V-axis on the substrate dopant concentration obeyed some specific law, we proposed that the defects are neutral complexes of dopant ions and sputter-induced native defects. These native defects were assumed to depend on the Fermi level position, namely the PGa antisite and the VP vacancy for p-GaP and the VGa vacancy for n-GaP. The conversion between these defects occurs by nearest neighbour hopping of a phosphorus atom. The Schottky barrier heights obtained on p-GaP could be explained by Fermi level pinning at the surface due to the PGa defects. This could not be confirmed by n-GaP as the energy level position of the VGa was not available. The defects could be annealed out between 200° C and 300° C and the associated change of the Schottky barrier height corroborated the proposed model.
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  • 53
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    Applied physics 53 (1991), S. 8-19 
    ISSN: 1432-0630
    Keywords: 82.45 ; 61.70 ; 68.45
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A number of interesting and still not fully understood phenomena occur if silicon is used as an electrode in an electrochemical cell. Effects include porous silicon layer (PSL) formation with features on a nanometer scale, surface roughening on a micrometer scale, quantum efficiencies for light generated currents much larger than 1, preferential etching of defects, electropolishing, and voltage or current oscillations. It is shown that despite the complexities of chemical reactions involved, a basic understanding of the electrode behavior is possible from a semiconductor physics point of view and that it can be advantageous to use the silicon — electrolyte junction for analytical purposes. Topics such as defect characterization, measurements of minority carrier diffusion length, or surface recombination velocities can be addressed in unique ways by taking advantage of particular properties of the silicon — hydrofluoric acid system. Based on the general description of the Si — electrolyte junction given in this paper, strengths and limitations of some electrochemical methods are discussed in some detail and illustrated by examples.
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  • 54
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    Applied physics 53 (1991), S. 189-193 
    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
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    Notes: Abstract The electrical activity of interfacial misfit dislocations in silicon has been examined using the electron beam induced current technique (EBIC) in a scanning electron microscope. “Clean” misfit dislocations, i.e. no EBIC contrast, formed during high-temperature Si(Ge) chemical vapor epitaxy were studied. These defects were subsequently decorated with known metallic impurities (Au and Ni) by diffusion at 400° C to 1130° C from a back-side evaporated layer. Qualitative analysis of the electrical activity in relation to the energy levels anticipated for the clean or decorated dislocations is presented. Of particular interest is the case of defect-induced conductivity type inversion which occurred both at the top surface and at the buried dislocated interfaces of the multilayer. The prospects for using dislocations in a beneficial manner as active elements in electronic devices are discussed.
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  • 55
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    Applied physics 53 (1991), S. 194-197 
    ISSN: 1432-0630
    Keywords: 72.40 ; 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms has been investigated. On the basis of the trapping of photo-excited carriers into two deep levels of gold atoms, a model for the occurrence of transient negative photoconductivity is proposed and related qualitatively to some experimental results.
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  • 56
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    Applied physics 53 (1991), S. 388-402 
    ISSN: 1432-0630
    Keywords: 68.35 ; 61.16 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Low-energy ion backscattering and scanning tunneling microscopy (STM) have been used in combination to get better insight into the field of surface crystallography. The synergic effectiveness resulting from the complementing character of the two methods has been exemplified at clean NiAl(111) and for oxygen and nitrogen adsorption on Cu(110). The position of the atom cores is accessible by the low-energy noble gas impact collision ion scattering spectroscopy with neutral detection (NICISS). As a technique averaging over a macroscopic area of the sample, NICISS is better suited to supply information on features of completely developed phases, either on clean or adsorbate saturated surfaces. Additional information, on the other hand, can be gained by scanning tunneling microscopy (STM), which as a powerful local probe may be used to image surfaces with atomic resolution and to monitor defects, steps and the growth kinetics of e.g. adsorption-induced phase changes.
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    Applied physics 53 (1991), S. 81-86 
    ISSN: 1432-0630
    Keywords: 61.70 ; 72.40 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract Measurements of photoconductivity and light-induced absorption in KNbO3: Fe are performed at different light intensities and crystal temperatures. The results are interpreted in terms of a two-center charge transport model. Different model parameters may be evaluated from the experimental data. A complete set of parameters is suggested explaining the dependences of photoconductivity and light-induced absorption on light intensity and temperature for the KNbO3: Fe crystal investigated.
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  • 58
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    Applied physics 53 (1991), S. 330-331 
    ISSN: 1432-0630
    Keywords: 42.60 ; 61.40 ; 68.35
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Structure formation observed in UV-laser ablated poly-ethylene-terephthalate (PET) foils can uniquely be assigned to mechanical and thermal pretreatments.
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  • 59
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    Oxidation of metals 36 (1991), S. 439-464 
    ISSN: 1573-4889
    Keywords: V-A1 alloy ; Cr and Ti additions ; oxidation ; kinetics ; V2O5 ; Al2O3
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation behavior in air of pure vanadium, V-30Al, V-30Al-10Cr, and V-30Al-10Ti (weight percent) was investigated over the temperature range of 700–1000° C. The oxidation of pure vanadium was characterized by linear kinetics due to the formation of liquid V2O5 which dripped from the sample. The oxidation behavior of the alloys was characterized by linear and parabolic kinetics which combined to give an overall time dependence of 0.6–0.8. An empirical relationship of the form: ΔW/A=Bt + Ct1/2 + D was found to fit the data well, with the linear contribution suspected to be from V2O5 formation for V-30Al and V-30Al-10Cr, and a semi-liquid mixture of V2O5 and Al2O3 for V-30Al-10Ti. The parabolic term is presumed related to the formation of a solid mixture of V2O5 and Al2O3 for V-30Al and V-30Al-10Cr, and TiO2 for V-30Al-10Ti The addition of aluminum was found to reduce the oxidation rate of vanadium, but not to the extent predicted by the theory of competing oxide phases proposed by Wang, Gleeson, and Douglass. This was attributed to the formation of a liquid-oxide phase in the initial stages of exposure from which the alloys could not recover. Ternary additions of chromium and titanium were found to decrease the oxidation rate further, with chromium being the most effective. The oxide scales of the alloys were found to be highly porous at 900° C and 1000° C, due to the high vapor pressure of V2O5 above 800° C.
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  • 60
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    Oxidation of metals 36 (1991), S. 143-156 
    ISSN: 1573-4889
    Keywords: plasma nitriding ; Fe-18Cr-9Ni ; CrN precipitates ; nitrogen diffusion ; kinetics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract To clarify the mechanism of plasma nitriding, we examined the optical microstructure, the hardness, the precipitation, and the concentration of dissolved nitrogen in Fe-18Cr-9Ni nitrided using plasma in the range of 723–823 K. Compared with ammonia-gas nitriding, the features of plasma nitriding are the formation of small chromium-nitride precipitates (CrN), the absence of an externally nitrided layer, the high concentration of dissolved nitrogen, and the high hardness (HV=1200). The diffusion coefficient of nitrogen in the present alloy was determined using the growth rate of the internally nitrided layer, based on calculations used in internal oxidation. Plasma- and gas-nitriding were also compared with respect to the growth rate of the nitrided layer.
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  • 61
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    Oxidation of metals 35 (1991), S. 107-137 
    ISSN: 1573-4889
    Keywords: iron ; oxidation in CO2+CO mixtures ; kinetics ; reaction mechanisms
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Oxidation of high purity iron in CO 2 and CO2 + COmixtures at different total pressures (0.1–1 atm.) has been studied at 1000–1200°C. While paper I of this study emphasized studies of the relation between scale morphology and reaction kinetics, this paper focuses on the reaction mechanism during the initial oxidation involving growth of wüstite films and scales. The reaction behavior is analyzed in terms of coupled kinetics comprising a surface reaction and diffusional transport through the scale. A classical model derived by C. Wagner, based on the assumption that the properties and defect concentrations in the scale surface are exactly the same as in bulk wüstite equilibrated in CO 2 +CO mixtures, does not provide a satisfactory description of the reaction kinetics and the gas-pressure dependence of the surface reaction. As an alternative model, it is suggested that the gasous molecules/species interacts with the surface to form surface complexes, and that surface complexes withCO2 serve as preferred reaction sites for the surface reaction.
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  • 62
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    Oxidation of metals 35 (1991), S. 397-404 
    ISSN: 1573-4889
    Keywords: copper alloys ; nitridation ; kinetics ; scale structure
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract One of the characteristic features of Mn-Cu binary alloys nitrided by gaseous nitrogen is that one of the two constitutive elements (Mn) can form nitrides, while the other one (Cu) does not give any stable compound with nitrogen. The only mixed manganese-copper nitride is the CuMn 3 N compound. The reaction kinetics with nitrogen are very slow and there is no internal nitriding. For alloys containing less than 20 at.% Mn, nitrogen reacts very little. The nitride scale formed on the alloys of greater Mn concentrations is a mixed nitride whose formula is Cu 1−x Mn 3+x N. The techniques of examination used are SEM, EMA, and GDS analysis.
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  • 63
    ISSN: 1435-1536
    Keywords: Polystyrene seed ; poly(butyl acrylate-methacrylic acid) shell ; particle mophology ; location of carboxylic groups ; kinetics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Polystyrene (PS) (1)/Poly(n-butyl acrylate (BA)-methacrylic acid (MAA)) (2) structured particle latexes were prepared by emulsion polymerization using monodisperse polystyrene latex seed (118 nm) and different BA/MAA ratios. Three main aspects have been investigated: i) the polymerization kinetics; ii) the particle morphology as a function of reaction time; iii) the distribution of MAA units between the water phase and the polymer particles. The amount of MAA in the shell copolymer was found to be the main factor controlling the particle shape and morphology. The shape of the structured particles was, generally, non-spherical, and the shape irregularities increased as a particles was, generally, non-spherical, and the shape irregularities increased as a function of reaction time. At the beginning of the second stage reaction, new small particles were observed, which coalesced onto the PS seed as the polymerization proceeded. The distribution of the MAA groups in the latex particles and the serum was analyzed by alkali/back-acid titration, using ionic exchanged latexes. No MAA groups were detected in the latex serum. Due to the lowTg of the BA-MAA copolymers, alkali conductimetric titrations accounted for all the MAA groups on and within the polymer particles. Therefore, for these systems, this method is not only limited to a thin surface layer, as it is often assumed.
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  • 64
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The primary species in both solid-state conduction and heterogeneous electrocatalysis of solid oxide electrolytes is the anion vacancy. The nature and effect of the local environment on anion vacancies in 10 m/o yttria stabilized zirconia (YSZ) and 20 m/o erbia stabilized bismuth oxide (ESB) was studied using uv-visible absorption and fluorescence spectroscopy. Partial reduction of YSZ and ordering of the oxygen sublattice in ESB is discussed. The species common to both of these phenomena, anion vacancies, was found to be luminescent and the absorption and fluorescence spectra attributable to F-center type defects is described.
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  • 65
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    Applied physics 50 (1990), S. 151-156 
    ISSN: 1432-0630
    Keywords: 61.70 ; 17.55
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    Notes: Abstract Electrically active deep levels related to zinc in silicon are investigated in n- and p-type silicon using Deep-Level Transient Fourier Spectroscopy (DLTFS) measurements. While in n-type silicon a level at E C−0.49 eV is observed, the main zinc-related levels in p-type silicon are determined to be E V+0.27 eV and E V+0.60 eV. The latter are associated with zinc situated on regular silicon lattice sites. The emission rate of these centers exhibits a field dependence which cannot be quantitatively explained with the Poole-Frenkel model. On the other hand, a shallow level at E V+0.09 eV is observed only in boron-doped silicon which may be related to a zinc-boron complex. Other zinc-related levels are found at E V+0.23 eV and E V+0.33 eV, their concentration depending on that of zinc on substitutional sites. In addition, the evaluation of depth profiles and the analysis of the field dependence of the emission rate based on the DLTFS method is presented.
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  • 66
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    Applied physics 50 (1990), S. 273-286 
    ISSN: 1432-0630
    Keywords: 85.30 ; 72.20 ; 73.40 ; 61.70
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    Notes: Abstract The reproducible, mass production of almost ideal silicon p-n junctions has allowed two new phenomena to be discovered: a pure generation without recombination, and a slow capacitance-free current transient. Our present knowledge of these phenomena is reviewed and speculations about the centres responsible for them are discussed; these centres seem to be connected to ultimate, unavoidable properties of the silicon p-n junction rather than to unwanted impurities.
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  • 67
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    Applied physics 51 (1990), S. 13-17 
    ISSN: 1432-0630
    Keywords: 61.70 ; 72.40 ; 78.20
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    Notes: Abstract A charge transport model including deep and shallow traps explains both the nonlinear relation between photoconductivity and light intensity and the light-induced absorption in BaTiO3. A correlation between measurements of photoconductivity and light-induced absorption as a function of temperature yields parameters for the shallow center, among them thermal activation energy and generation rate.
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  • 68
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    Applied physics 50 (1990), S. 531-540 
    ISSN: 1432-0630
    Keywords: 61.70 ; 78.55 ; 78.65
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Two attractive methods for materials characterization are applied and discussed: (a) light scattering topography for fast and nondestructive testing of structural perfection, and (b) photoluminescence topography for evaluating the light emission characteristics of photoluminescent materials. Among the examples presented are semiconductor substrates and films of silicon, silicon-on-insulators of different kind, and III–V materials.
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  • 69
    ISSN: 1432-0630
    Keywords: 61.70
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    Notes: Abstract A method is proposed for the determination of dislocation density depth profiles in the thin surface layers comparable to the penetration depth of X-rays, with no need to remove the surface layers by chemical or electrolytic polishing. The dislocation density depth profile is modelled mathematically and the parameters determining the profile can be evaluated from the Fourier transform of the X-ray diffracted profiles with various wavelengths of radiation.
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  • 70
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    Applied physics 50 (1990), S. 131-139 
    ISSN: 1432-0630
    Keywords: 81.60 ; 82.65 ; 42.60
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    Notes: Abstract The present status of experimental and theoretical work on continuous wave laser-assisted reaction of metals with oxygen is presented. Differences between this and normal isothermal oxidation of metals are emphasized. Available theoretical models are discussed. They deal with roles of thermal history, feedback effects between optical absorption and reaction rate. The nature of so-called “non-purely thermal” effects is discussed. Hints for further research are presented.
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  • 71
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    Applied physics 50 (1990), S. 197-205 
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
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    Notes: Abstract Gold diffusion in silicon is investigated using Rapid Optical Annealing at temperatures in the range of 800°C to 1200°C and annealing times from 300 s down to 1 s. The resulting content of substitutional gold is determined by spreading resistance measurements and analyzed by comparison with extensive numerical simulations. The profiles obtained show a broader spectrum as compared to the U-shapes after long time diffusion. The cooling process affects the profiles significantly, since they depend on the wafer thickness. An unexpected penetration depth was found after 1200°C diffusion in thick wafers, which are subject to small cooling rates. This phenomenon is due to a special combination of reverse kick-out, deep diffusion of highly supersaturated interstitial gold, and again an incorporation in lattice sites, termed the RDI effect. Numerical calculations allow us to reproduce the experimentally observed profiles only if a sensitive balance between the different temperature dependencies is obeyed. These investigations, therefore, yield new information about the equilibrium concentration and diffusion of silicon interstitials. A best set of parameters is presented. The time constant of the kick-out process is quantified for the first time.
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  • 72
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    Applied physics 51 (1990), S. 141-145 
    ISSN: 1432-0630
    Keywords: 78.70 Bj ; 61.70
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    Notes: Abstract Positron lifetime measurements have been made in quenched or irradiated pure Pb and in quenched Pb(Ag) alloys. From positron investigation of annealing behaviour, the precipitation of silver atoms in dilute alloys should be understood in terms of (Ag-Pb) interstitially migrating pairs. The presence of di-interstitials (Ag-Ag) or complexes [Ag(S)-V] as mobile defects responsible for the Ag transport process in concentrated alloys is discussed.
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    Applied physics 50 (1990), S. 241-247 
    ISSN: 1432-0630
    Keywords: 61.70 ; 78.30
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    Notes: Abstract The resistivity of boron-doped silicon can be significantly increased by polishing such material with an appropriate amine- and copper-containing slurry. This effect is ascribed to a passivation of the boron acceptors by a defect produced or introduced by the polishing process. Three new, so far unknown localized vibrational modes at 691, 720, and 1038 cm−1 are observed in highly boron-doped silicon samples after such a polishing treatment. Two of these localized modes can be identified as due to a boron-containing defect. High concentrations of copper found in the samples after appropriate polishing indicate a participation — either directly or indirectly — of this metal in the passivation process.
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  • 74
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    Oxidation of metals 33 (1990), S. 279-299 
    ISSN: 1573-4889
    Keywords: corrosion SO2 ; chromium ; manganese ; kinetics ; scale analysis ; phase diagram stability
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The corrosion of chromium and manganese by pure SO2 has been investigated in the temperature range 890–1350 K at SO2 pressure from 0.01–0.5 atm. Both metals oxidize according to a parabolic rate law, and the scales consist of an inner region containing a mixture of oxide and sulfide (Cr2O3+ CrS or MnO and MnS) and an outer region of oxide (Cr2O3 or MnO). These two metals have similar thermodynamic behavior, and the main mechanism of reaction is considered to be the direct reaction of the metal with SO2. The results also indicate that in the absence of trace amounts of oxygen, and at sufficiently low temperature (〈950 K), the formation of Mn3O4 does not occur only if a complete description of the atmosphere generated by a SO2-O2-S2 mixture was considered.
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  • 75
    ISSN: 1573-4889
    Keywords: nonisothermal oxidation ; kinetics ; iron ; iron-chromium alloys ; reactive-oxide coating
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract The nonisothermal oxidation behavior of pure iron and a few iron-chromium alloys in dry air has been studied. The effects of a superficial coating of a reactive oxide, CeO2, on the oxidation behavior were studied. Linear heating rates of 3 K/min and 6 K/min were maintained up to a final temperature ranging from 1273–1473 K. Coatings were applied either from a slurry or an aqueous bath. The CeO2 coating has been found to be effective not only in decreasing the nonisothermal oxidation rate but also in improving the scale adherence. Moreover, the coated samples withstood a number of heating cycles without scale rupture. The mass gain of the samples as a function of temperature was recorded by means of a sensitive balance, and the scales have been characterized by SEM, EPMA, and x-ray diffraction analysis.
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    Oxidation of metals 34 (1990), S. 473-496 
    ISSN: 1573-4889
    Keywords: Internal nitriding ; 310 stainless steel ; austenitic ; kinetics ; microhardness
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The internal-nitriding behavior in ammonia-hydrogen atmospheres of type-310 stainless steel and 310 to which either 2 wt.% Ti or 3 wt.% Al were added was studied over the range of 550–950°C. An Fe-24Cr binary alloy was included to assess the role of a BCC crystal structure vs the FCC crystal structure of 310 stainless steel. The BCC alloy exhibited the most rapid kinetics as expected. X-ray diffraction showed only the presence of CrN in all the alloys up to 735°C. At 850°C and above, both CrN and Cr2N were detected. The nonformation of TiN and AlN at lower temperatures is attributed to nucleation problems. Precipitates were extremely fine (unresolvable even at 20,000×) at 563°C and became much coarser with increasing temperature. The precipitate density, size, and shape varied across the internal-nitriding zone at the higher temperatures. External scaling was noted at 850°C and above, however, it was not a continuous film. The activation energy of internal nitriding from 563–735°C ranged from 3.8 kcal/mol for 310+2Ti to 18.2 kcal/mol for 310+3Al; from 850–950°C, the activation energy ranged from 44 (310+2Ti) to 56.6 kcal/mol (310+3Al). Microhardness profiles show that an intermediate zone exists between the nitride case and the base metal. The origin of this zone is discussed.
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    Oxidation of metals 33 (1990), S. 177-189 
    ISSN: 1573-4889
    Keywords: kinetics ; oxidation ; titanium hydride ; rutile
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The oxidation kinetics of titanium-hydride powders were studied in the temperature range of 298–1378 K in air at atmospheric pressure. DTA, DSC, X-ray analysis, and scanning electron microscopy were used. Oxidation was found to take place by TiHxOy oxyhydride phases formation. The oxidation reaction rate at temperatures above 870 K was limited by diffusion of oxygen atoms through a rutile scale formed on the surface. The activation energy and preexponential values of the Arrhenius equation for different interaction stages as well as transformation enthalpies were calculated.
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    Colloid & polymer science 268 (1990), S. 645-648 
    ISSN: 1435-1536
    Keywords: β-picolinium-p-chlorophenacylide ; α-α azobisisobutyronitrile ; N-vinyl pyrrolidone ; dilatometry ; retarder ; kinetics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract β-Picolinium-p-chlorophenacylide (β-PCFY) acts as a retarder for polymerization of N-vinyl pyrrolidone. The polymerization runs were carried out at 60°C using benzene as an inert solvent. The kinetic equation for the present system may be written asR p α[β-PCPY]−1.0 [AIBN]0.66[N-VP]1.0. The value of overall energy of activation for polymerization in presence and absence ofβ-PCPY was computed as 44.0 and 42.3 kJ mol−1, respectively. The inverse relationship ofR p and¯M v withβ-PCPY suggests thatβ-PCPY acts as a polymerization retarder. The retarding effect is also evidenced by higher initiator exponent value and higher value of energy of activation in presence of ylide. A mechanism is also proposed in which polymer propagating chain combines with one ylide component to give resonance stabilized radical.
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    Applied physics 48 (1989), S. 3-9 
    ISSN: 1432-0630
    Keywords: 61.70 ; 71
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    Notes: Abstract Molecule-like defects in crystalline semiconductors can display bistable properties when two different structural arrangements are possible for constant charge on the defects. This introductory paper will review the physical and technical aspects of this new field of research. It also includes a detailed presentation of our experimental studies on the recently discovered bistable thermal donor defect in silicon.
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    ISSN: 1432-0630
    Keywords: 61.70 ; 78.30 ; 72.40
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    Notes: Abstract Shallow thermal donors are electrically active oxygen-related thermally formed defects observed in oxygen-rich silicon annealed between 300 ° and 600 ° C. Seven donors have been identified with an average central-cell correction of only 5 meV. In view of their molecule-like nature this close agreement to the effective mass theory prediction for a hydrogen-like donor in silicon is of interest. It is shown that these centres are not correlated to the residual impurities phosphorus and boron but rather to the presence of nitrogen. Nitrogen-doped oxygen-rich samples show increased shallow thermal donor growth and a reduction in the growth of other oxygen-related donors in comparison to normally nitrogen-undoped oxygen-rich samples. A reduction in shallow thermal donor concentration at high nitrogen concentrations is reported.
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  • 81
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
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    Notes: Abstract In- and out-diffusion experiments of oxygen in silicon indicate the existence of an oxygen-containing species diffusing much faster than interstitial oxygen at temperatures below about 700°C. The formation of oxygen-related thermal donors in the temperature range around 450°C also requires a fast diffusing species. The paper examines the possibility of this fast diffusing species beingmolecular oxygen, as had been suggested earlier. Special emphasis will be placed on experimental results which have become available since that time. These results allow one to relate thermal donor formation to the loss of interstitial oxygen and to oxygen precipitation. The role of carbon is also considered in this context.
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    Applied physics 48 (1989), S. 237-240 
    ISSN: 1432-0630
    Keywords: 72.40
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    Notes: Abstract This study presents a simulation that is used to determine the sensitivity of the phase shift analysis of the modulated photocurrent method to the differences in the fine scale structures in the density of states (DOS) distributions. Four DOS distributions are considered and the expected data are obtained. The results show that the modulated photocurrent method is very sensitive to such fine features in the DOS distributions. A comparison is also made with the sensitivity of other techniques commonly used in the determination of the DOS profiles.
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  • 83
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
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    Notes: Abstract Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during annealing have been determined by double crystal x-ray diffraction and correlated to anomalous P diffusivity. A qualitative distribution of the interstitial excess in solution in the silicon lattice during annealing is proposed for the two different cases. These point defects, released by the dissolution of the interstitial clusters produced by the implanted ions, have been identified as responsible for the observed enhanced P diffusion.
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  • 84
    ISSN: 1432-0630
    Keywords: 06 ; 07 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
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    Notes: Abstract A novel method is presented for measuring the spectral density of resistance fluctuations without the explicit determination of the voltage background noise (Johnson noise, pre-amplifier noise). The output of a standard ac bridge excited by a single-frequency alternating current is demodulated by two phase-sensitive detectors which operate in quadrature. When the phase difference between excitation and detection is properly set, the real part of the cross-spectral density of the two demodulators shows only the spectral density of the resistance fluctuations and not the disturbing background noise. The feasibility of our new method is demonstrated by measurements of 1/f noise of a thin-film A1 sample.
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    Applied physics 49 (1989), S. 165-169 
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.
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  • 86
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    Applied physics 49 (1989), S. 189-197 
    ISSN: 1432-0630
    Keywords: 42.60 ; 81.10 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The photolytic laser chemical vapor deposition (LCVD) rate of platinum from its bishexafluoroacetylacetonate precurser has been measured in situ and in real time. Optical transmission of the 350 nm photolysis light through the deposited platinum film and a transparent glass substrate is monitored and analysed in detail. From these measurements, as well as measurements of the reflected light, the fraction of the laser beam power absorbed in the metal film is found. The latter allows a simple estimate of the laser-induced temperature rise at the metal surface. It is shown that even rather small temperature increases of the order of several tens of degrees centigrade can completely change the photolysis mechanism and hence drastically influence the photolytic LCVD rate. A simple modification of Lax's model, in which a temperature dependent thermal conductivity of the substrate is introduced, is used to describe the laser-induced heating of a strongly absorbing thin metal film on a glass substrate.
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  • 87
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    Applied physics 48 (1989), S. 527-541 
    ISSN: 1432-0630
    Keywords: 74.70 ; 42.60 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The use of lasers in the formation and surface processing of high-temperature superconductors (HTS) is reviewed. Presently, thin film fabrication by reactive laser sputtering, and surface patterning by laser-induced reduction/metallization and ablation are the most promising applications. The great majority of the investigations have been performed for Y-Ba-Cu-O.
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  • 88
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 72.80J ; 77.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract ac measurements (1 Hz–10 kHz) have been carried out on a Pb2CrO5 ceramic sample (with surface electrodes) at room temperature as a function of voltage and intensity of visible light illuminating the sample. Cole-Cole complex impedance plots show that the electrical behaviour of Pb2CrO5 is strongly modified when the sample is illuminated. The bulk conductance of the sample is found to increase with increasing light intensity indicating that this dielectric material becomes semiconducting due to the photogeneration of free charge carriers in the conduction band. The dielectric constant of the sample is enhanced by illumination probably due to light-dependent space charge effects in a manner where the dielectric's relaxation time (τ=RC=0.7 ms) remains constant with light intensity. On the other hand, both the bulk conductance and geometrical capacitance of the sample have been found to be almost independent of the applied voltage.
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  • 89
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l019e/cm2. In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI 2 during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section σt(T) ∝T n withn= −1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.
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  • 90
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    Applied physics 48 (1989), S. 517-520 
    ISSN: 1432-0630
    Keywords: 72.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract One of the major problems of the method of phase shift analysis of modulated photocurrent for studying the density of states in the energy gap of amorphous semiconductors has been the determination of the energy scale corresponding to this DOS profile. This study presents a new way of dealing with this problem. This new method is especially useful in the case where the DOS profile lacks a characteristic peak. A computer analysis is used to confirm the validity of this method and to demonstrate how it can be used.
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  • 91
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    Applied physics 48 (1989), S. 273-276 
    ISSN: 1432-0630
    Keywords: 07.20 ; 42.60 ; 44.50 ; 78.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A phosphor with temperature-dependent lifetime has been used to measure the temperature distribution produced by laser heating of a thin film surface. A gold thin film deposited on a quartz substrate is coated with ∼40 μm film of the phosphor material. A cw argon ion laser (476 nm) beam is split into two beams, with the more intense beam focused to 15 μm (1/e2 radius) to heat the film through the quartz substrate. The weaker probe beam is chopped and focused tightly using a microscope objective to excite the phosphor from the other side. The spatial variation in lifetime, and hence the temperature distribution, is obtained by scanning the probe beam over the heated region. The temperature distribution measured for different film thickness's is compared with calculations using a finite element model. The calculated temperatures at the gold surface near the laser beam are higher than the experimentally measured values, and agree only when the heat-sinking effect of the phosphor material is taken into account. The results suggest that a phosphor layer thinner than a micron will be required (for 15 μm laser spot size) so as not to perturb the temperature of the gold layer.
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  • 92
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    Applied physics 48 (1989), S. 431-436 
    ISSN: 1432-0630
    Keywords: 72.20J ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A spectroscopic analysis by the light-beam-induced-current technique has been carried out to study the electrical properties of stacking faults in Czochralski silicon subjected to internal gettering treatments. By changing the wavelength of the light beam probing the sample, we have obtained the depth profiling of the stacking fault electrical activity. Occurrence of minority carrier recombination and generation processes at some stacking faults, corresponding, respectively, to dark and bright levels in a grey-shade imaging, has been observed. The presence of fixed charges at the defect-silicon matrix interface is hypothesized as a possible cause of the observed images.
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  • 93
    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We proposed a model to correlate, in a continuous manner, the composition dependence of electrical properties and the progressive extension of clusterization when the substitution rate increases in a fluoride anion excess CaF2-type solid solution of M1−xM x ′2+α F2+αx(α=1,2,3). A new classification of clusters is given based on the presence or absence of coexistence between two types of interstitial fluoride ions. The second part of the paper is devoted to the representation of the sum of interstitial fluoride ionsn F int and the sum of vacancies in normal sitesn □ according to the general equationy=(mx 3+λqx)/(x 2+q). This model allows us to correlate the structural and electrical properties of a large number of solid solutions with fluorite-type structure.
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  • 94
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    Applied physics 49 (1989), S. 33-40 
    ISSN: 1432-0630
    Keywords: 66.30 ; 81.40 ; 81.60 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides.
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  • 95
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    Applied physics 49 (1989), S. 221-223 
    ISSN: 1432-0630
    Keywords: 74.70 ; 42.60 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Superconducting films of Bi-Sr-Ca-Cu-O on (100) MgO substrates have been fabricated by XeCl-excimer-laser sputtering from ceramic targets of Bi2.5Sr2Ca2Cu3Oy in O2 atmosphere. The films were polycrystalline with the c-axis (30.80±0.02Å) preferably oriented normal to the substrate surface. Without post-annealing the films showed metallic resistance behavior with zero resistance temperatures of up to Tc(0) }- 79 K. The critical current density of the films had values of up to jc(50K)}- 104 A/cm2.
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  • 96
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    Applied physics 49 (1989), S. 413-424 
    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 85.80 ; 65.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We review investigations of Cd1−xPbxF2 superionic properties and show examples of applications of these crystals. Results of a study of thermodynamic, electrical and Raman-scattering properties of Cd1−xPbxF2 crystals are presented. These crystals can be used to construct reversible electrochemical cells.
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  • 97
    ISSN: 1432-0630
    Keywords: 72.60 ; 85.80 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrochemical characteristics and structural changes associated with discharge and charge of several tungstic acids such as H2WO4 and H2WO4 · H2O have been investigated. The suitability of these substances as new cathode materials for nonaqueous lithium batteries has been assessed. H2WO4, having only coordinated water molecules, showed a discharge capacity of about 410 Ah kg−1 of acid weight and a discharge potential around 2 V vs. Li/Li+. This capacity was much higher than the 40 ∼ 180 Ah kg−1 of anhydrous WO3. H2WO4 showed a good charge-discharge cycling behavior at a capacity below 1e −/W. However, the formation of a stable phase such as Li2WO4 during the cyclings limited the cycling number. In addition, the crystal structure of H2WO4 changed from orthorhombic to tetragonal during discharge, but the original layered lattice was kept on discharge to 1.5e −/W. On the other hand, a significant decrease in the layer spacing of H2WO4 · H2O took place with discharge, due to the direct interaction between the interlayer water molecule and the lithium inserted between the layers. In this paper, in particular, the effect of the coordinated and hydrated water molecules in the acid structure on the electrochemical behavior is discussed.
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  • 98
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    Applied physics 49 (1989), S. 25-31 
    ISSN: 1432-0630
    Keywords: 81.20 ; 66.30 ; 72.60 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Zirconia-titania-yttria oxide solutions are novel mixed-electrical conductors in which both oxygen-ions and electrons are mobile. A determination of their electrical properties is necessary for an evaluation of their potential applications. Single-phase oxide solutions have been prepared and characterized. Phase studies indicates extensive solid solution of titania into zirconia stabilized with 12 mol % yttria. The observed decrease in lattice parameter with increasing titania concentration in these oxide solutions indicates that titanium cations substitute for the zirconium cations in the fluorite lattice. The lattice and grain-boundary electrical conductivities have been determined using impedance spectroscopy at temperatures between 400 and 950 °C.
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  • 99
    ISSN: 1432-0630
    Keywords: 77.40 ; 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fluorides of the rutile structure are relatively simple ionic materials with tetragonal symmetry for which the dominant intrinsic defect has not been established. The present experiments involve low-temperature dielectric relaxation measurements on Er3+-and Y3+-doped MnF2 single crystals. Unexpectedly, dielectric loss peaks were observed at cryogenic temperatures, involving very low activation energies,E. For both dopants a prominent peak is observed for samples oriented parallel to thec-axis withE ∼ 6 meV and in perpendicular orientations withE=37 meV for Er3+ and 46 meV for Y3+ doping. Such lowE-values are probably too small to be controlled by lattice migration of a defect. Rather, we expect that they are due to a very low symmetry configuration created when the ions near the defect move “off symmetry” to a more stable configuration. Computer simulation calculations have been carried out which are much improved over early studies of this system in terms of the code used and the F-F interatomic potentials. The results show that the energy per defect for the anion Frenkel (1.53 eV) is lower than that of the Schottky (1.99 eV). It was also shown that the fluorine interstitial, Fi, adopts a split-interstitial form. This defect associates strongly with trivalent dopants Er and Y to produce a low symmetry dipolar structure with the necessary off-symmetry configuration to explain the experimental findings. Since there is no alternative way to explain these low temperature relaxations in terms of impurities associated with Mn vacancies, as would be required by the Schottky model, we conclude that these experiments serve to establish the nature of the intrinsic defect in MnF2 as anion Frenkel.
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  • 100
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    Applied physics 49 (1989), S. 149-155 
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The annealing behavior of secondary defects generated in 2 MeV B- and P-, and 1 MeV As-implanted (100) Si with a dose of 5×1014 ions/cm2 has been investigated after rapid thermal annealing (RTA) treatment using cross-sectional TEM observations. The results are compared with ones obtained by furnace annealing (FA) treatment. RTA is more effective than FA for the defect density reduction of deep defects existing beyond 2 μm depths from the surface in B- and P-implanted layers. However, when a dislocation loop diameter is close to the substrate surface, as in the case of As implantation, the loops climb up to the surface by 1250 °C RTA. Moreover, repeated RTA is effective for the suppression of secondary defect growth in B- and P-implanted layers, while there is no difference in defect density or configuration for As implantation between repeated and simple RTA.
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