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  • 1
    Electronic Resource
    Electronic Resource
    Vertical Nanowire Field Effect Transistor in the Flexible Polymer Foils Based on Ion Tracks (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 507-512 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Fabrication of flexible device structures and nanoscale size definition are presently among the mostimportant and ambitious development goals in the IT field. We have recently prepared the verticalnanowire field effect transistor in the flexible polymer foils based on ion tracks. The high-energetic fastheavy ions were used to irradiate the 8μm PET foils and then the chemical etching method wereemployed to prepare cylindrical channels in these PET foils. These channels were subsequently filledwith insulator material and semiconductor, and then provided with suitable metallic contacts, to obtaina vertical field-effect transistor device. Preparation and first electronic results on this new device arereported. Typically over 107 transistors per cm2 with the devices’ diameter of ~100 nm can be obtainedin this technique. The fabrication does not require lithography on the scale of a single transistor, and issuitable for large-area and flexible applications
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.507.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Heterojunctions and devices of colloidal semiconductor films and quantum dots (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7029-7035 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an electrical characterization of thin film semiconductor devices based on porous nanocrystalline TiO2 anatase films. It is shown that the TiO2 films can be doped, and that injecting or blocking electrical contacts can be established by metals, semiconductors, and oxides. This opens the way for the preparation of a number of all-solid-state devices. We present results on a Schottky barrier, a two-layer heterojunction on amorphous silicon, and a distributed heterojunction involving PbS quantum dots adsorbed on the internal surface of the TiO2 film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361469
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  • 3
    Electronic Resource
    Electronic Resource
    Electrodeposition of compound semiconductors in polymer channels of 100 nm diameter (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4287-4289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of a transparent, p-type semiconductor, CuSCN, in nanometer sized channels of a thin polyester foil. High energy heavy ion irradiation and subsequent etching is used to prepare vertical cylindrical channels in polymers with diameters in the range 30–3000 nm. Electrodeposition is then used to fill these channels with polycrystalline CuSCN. The embedding is robust against mechanical stress on the foil. Since the bulk modulus of the inorganic CuSCN is larger than that of the polymeric matrix, only small forces act on the embedded semiconductor, resulting in low electrical changes upon bending or flexing of the foil. Dissolving the polyester matrix results in free-standing semiconductor columns with height-to-diameter ratios in excess of 100. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403668
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  • 4
    Electronic Resource
    Electronic Resource
    Hexagonal nanotubes of ZnS by chemical conversion of monocrystalline ZnO columns (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3687-3689 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monocrystalline ZnO columns grown in electrodeposition were converted to ZnS using ion exchange reactions in H2S or S vapor. At ∼400 °C the reaction with H2S only affects a thin layer of 10–30 nm thickness at the surface of the ZnO crystallites, and ZnS-coated ZnO columns are produced. Exploiting the large difference in etch resistance between ZnS and ZnO, the ZnO core of the columns can be removed, and a tubular structure of ZnS can be prepared. Typical dimensions of the ZnS tubes are a length of 1–3 μm, a diameter of 100–300 nm, and a wall thickness of 10–30 nm. The ZnS tubes have the same distribution, alignment, and surface morphology as the original ZnO columns. The reaction in S vapor is suitable to produce solid ZnS columns. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376427
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  • 5
    Electronic Resource
    Electronic Resource
    Thin film semiconductor deposition on free-standing ZnO columns (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2575-2577 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the deposition of a-Si:H on thin films of free-standing single crystalline ZnO columns. The ZnO columns have a height of several μm and a diameter between 100 and 200 nm. The ZnO films are prepared in electrodeposition and have considerable potential for use in photoelectric thin film devices. Morphology, electronic parameters, and basic optical behavior, such as reflectance and light trapping efficiency, are reported. Amorphous silicon is deposited on the columns as a continuous smooth film with conformal coverage. Some possibilities of using these films in devices are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319187
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  • 6
    Electronic Resource
    Electronic Resource
    Spatially distributed p-n heterojunction based on nanoporous TiO2 and CuSCN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 692-694 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Directed semiconductor growth in nanoporous ceramic films is reported. A p-n heterojunction with an interface that is spatially distributed across the complete thickness of the ceramic film is established. The interface area is estimated to be several 100 times larger than its geometric projection. The p-n junction shows excellent rectification and may serve as the basic building block for photovoltaic devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124484
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  • 7
    Electronic Resource
    Electronic Resource
    Photoconduction in porous TiO2 sensitized by PbS quantum dots (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 349-351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconduction in heterogeneous thin films consisting of a porous nanocrystalline TiO2 matrix and internally adsorbed quantum size PbS clusters is reported. The TiO2 serves to establish electrical contact to the PbS clusters, and the PbS cluster size is chosen so that photogenerated excess electrons are directly injected from the PbS to the TiO2. The films exhibit strong photoconductance in the visible region, indicating photoelectric sensitization of the TiO2 by the PbS clusters. Comparison of the absorption and photocurrent spectra shows that only PbS clusters of sizes smaller than ∼25 A(ring) contribute to the sensitization. For larger clusters the band alignment at the TiO2/PbS interface appears to be unfavorable for carrier transfer. Further improvement in the photoresponse will have to involve optimization of the transport properties in the nanocrystalline TiO2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114209
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  • 8
    Electronic Resource
    Electronic Resource
    Internal photoemission at the Si/SiO2 and Si/metal interface (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6482-6484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results from infrared photocurrent measurements at the Si/metal and Si/SiO2/metal interface. We observe internal photoemission from the Si valence band into metal states or into empty interface states. For the p-Si/SiO2/metal interface the photocurrent threshold occurs at a photon energy of 0.138 eV, indicating that the Fermi level is pinned close to the valence band. We argue that this is the case only for discrete locations of the interface and suggest that the pinning is caused by a defect-related acceptor level. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364434
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  • 9
    Electronic Resource
    Electronic Resource
    Determination of electric field profiles in amorphous silicon solar cells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 478-480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoconductivity measurements with subnanosecond time resolution are applied to study the electric field profile in amorphous silicon solar cells in the range from 0.3 V forward to 0.8 V reverse bias. The method is used for a comparison of state-of-the art devices with different junction design. Optical and electrical contributions to the device performance are discussed and the limitations in improving the performance by use of a-SiC:H window layers are pointed out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103672
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  • 10
    Electronic Resource
    Electronic Resource
    Determination of transport parameters in fullerene films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2160-2162 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the electron and hole drift mobilities and the recombination lifetime in thin polycrystalline C60 films. The data are obtained from photocurrent measurements involving an optical interference grating moving at variable velocity across the sample surface. Considerable degradation of the transport parameters is observed as the samples are exposed to air. The initial values for the electron and hole drift mobilities are 1.3±0.2 cm2/V s and (2±1)×10−4 cm2/V s, respectively, and for the recombination lifetime (1.7±0.2)×10−6 s. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119368
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