ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Photon-gated persistent spectral hole burning by donor-acceptor electron transfer in tetraphenylporphine/halogenated anthracene systems (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4671-4678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photon-gated persistent spectral hole burning was observed for metal-free tetraphenylporphine with halogenated anthracene derivatives in poly(methylmethacrylate) or poly(ethylene) at liquid-helium temperatures. The hole formation yield was markedly dependent on the polymer matrices and the sample composition as well as on the gating wavelength. The irreversible broadening of holes in the systems measured by temperature cycling experiment was smaller than that by proton tautomerization of tetraphenylporphine. We concluded that the hole formation mechanism is donor-acceptor electron transfer on the basis of combined analysis of the matix and acceptor concentration dependence of hole formation yield, the action spectrum of the gating photon and the photoproduct spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349058
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Photon-gated persistent spectral hole burning by electron transfer from a doped donor to an acceptor branched to a host polymer matrix (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 374-379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-color photon-gated persistent spectral hole burning (PSHB) via donor-acceptor electron transfer is reported in systems where the acceptor, 10-chloroanthracene, was intentionally branched to a side chain of the poly(methylmethacrylate) (PMMA) host polymer while the donor, metal-free tetraphenylporphine, was dispersed in the polymer. The systems, which had an acceptor concentration of up to 10−1 M, were prepared without aggregation of the acceptor. Spectral holes were burnt in the Qx(0,0) absorption band of the donor when the systems were simultaneously irradiated with a frequency-selective excitation (duration: 500 ps; energy: 200 nJ/cm2) and a gating excitation (wavelength: 514.5 nm; duration: 33 ms; energy: 14 μJ/cm2). The difference absorption spectrum between the unburned absorption spectrum and one recorded after photon-gated PSHB has confirmed that the hole formation mechanism is donor-acceptor electron transfer from a photoexcited donor to a ground-state branched acceptor. The thermal stability of burnt holes measured with a temperature cycling experiment increased when the acceptor was branched into PMMA. The effect of acceptor branching on the PSHB characteristics is discussed with reference to those for an acceptor-doped system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353858
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Edge plasma fluctuations and transport in a reversed-field pinch (1994)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 2297-2307 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge plasma fluctuations are studied with inserted triple Langmuir probes and magnetic coils in the TPE-1RM20 reversed-field pinch [Y. Yagi et al., in Plasma Physics and Controlled Nuclear Fusion Research 1992 (International Atomic Energy Agency, Vienna, 1993), Vol. 2, p. 611]. Two-point measurements show that density and potential fluctuations have relatively low mode numbers (m〈3, n〈40). High coherence (γ=0.5) with magnetic field fluctuations and similar mode spectra suggest that density and potential fluctuations are mainly caused by electromagnetic turbulence. Broadband magnetic fluctuations are dominated by m=0, low-n modes and internally resonant m=1 and m=2 modes. A coherent (f=20–30 kHz) m=0, low-n mode is also observed. Particle flux driven by electrostatic electric field fluctuations is 50%–100% of total flux obtained from Dα line intensity measurement. Low-frequency fluctuations (f〈100 kHz) give the main contribution to the total flux. Electrostatic fluctuation driven electron energy flux is only of the order of 10% of total nonradiative power loss.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.870627
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth and electronic structure of a C60 derivative prepared by using a solution spray technique (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 209-212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate and analyze the epitaxial film formation of a molecular material that cannot be evaporated in vacuum due to thermal decomposition. A solution of the material is sprayed onto single crystalline van der Waals surfaces using a pulse valve under controlled vapor pressure of the solvent. Monolayer epitaxial films are obtained and we propose that the growth is mediated by liquid ultrathin films formed on the surface. Molecular arrangement and electronic structure of C60(CH3)5H films are studied by reflection high energy electron diffraction and ultraviolet photoelectron spectroscopy, respectively. The present technique will be useful to study the electronic structure of recently synthesized molecular materials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379052
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Development of a steady-state microwave ion source with large spherical electrodes for geometrical focusing : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1144-1147 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A steady-state electron cyclotron resonance ion source with large spherical electrodes has been developed to study the plasma wall interaction, erosion mechanism, and hydrogen retention of first wall materials in a nuclear fusion reactor. Discharge characteristics of the ion source were studied in terms of microwave power, magnetic field configuration, and gas (H2) pressure. Ion saturation current density Jis of about 21 mA/cm2 near the electrodes (target value is 20 mA/cm2) was achieved with microwave power of 3.0 kW and magnetic field of 2.3 kG at an optimal gas pressure. The measurement of Jis was made by a Langmuir probe. It was found that the dependence of ion saturation current density on the magnetic field was different between high (〉5 mTorr) and low (〈5 mTorr) pressure. The change of the gas inlet position from the center of the plasma production chamber to near the microwave input window gave higher ion saturation current density. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150410
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Determination of electric field profiles in amorphous silicon solar cells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 478-480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoconductivity measurements with subnanosecond time resolution are applied to study the electric field profile in amorphous silicon solar cells in the range from 0.3 V forward to 0.8 V reverse bias. The method is used for a comparison of state-of-the art devices with different junction design. Optical and electrical contributions to the device performance are discussed and the limitations in improving the performance by use of a-SiC:H window layers are pointed out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103672
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electronic structures at the interfaces between copper phthalocyanine and layered materials (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1869-1871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Copper phtalocyanine (CuPc) films with the thickness controlled in molecular scales have been grown epitaxially on (0001) surfaces of layered materials, and electronic interaction at the interfaces have been studied by photoelectron spectroscopy. Materials with different electronic properties having different work functions (Evac) were chosen as the substrates; semiconducting MoTe2 (Evac=4.0 eV), semi-metallic highly oriented pyrolytic graphite (Evac=4.5 eV) and metallic TaSe2 (Evac=5.5 eV). Formation of interface dipole layers was found at CuPc/TaSe2 interfaces and molecular orbitals involved were identified. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121210
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Self-organized fabrication of planar GaAs nanowhisker arrays (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 386-387 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs lateral nanowhiskers are grown on the side wall of a ridge formed on a GaAs substrate. The growth positions of the lateral nanowhiskers are controlled by a technique based on electron beam lithography. Also, lateral nanowhiskers bridging between two parallel wall surfaces are grown. These methods are potentially applicable to the fabrication of planar-type quantum functional devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118069
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Effect of growth temperature and substrate materials on epitaxial growth of coronene (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 268-274 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of coronene (C24H12) was studied on substrates having no dangling bonds, such as hydrogen-terminated Si(111), MoS2, MoTe2, and muscovite by using reflection high-energy electron diffraction. It was found that the sticking coefficient and the maximum thickness of the epitaxial films are strongly dependent on the substrate materials as well as on the growth temperature. The effectiveness of molecular mechanics calculation was examined by comparing the calculated stabilization energies with the experimental results. Importance of the electronic structure of substrates has been revealed and its effect was estimated quantitatively using the Lifshitz theory. The tendency that the interfacial dispersion force is stronger for smaller band gap materials has been shown from theoretical consideration. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368092
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    A correlation between crystalline qualities and growth parameters in GaAs on Si grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3295-3297 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the As4/Ga flux ratio and the growth temperature on the crystalline qualities are demonstrated in the heteroepitaxy of GaAs on Si grown by molecular-beam epitaxy. To improve surface morphology, either the As4/Ga flux ratio must be optimized to 8 when grown at 560 °C or the growth temperature must be increased. In electron-beam-induced current images, a lot of complicated dark regions have been observed. The dark regions decreased and photoluminescence intensity became strong with the increase in the growth temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341502
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...