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  • 1
    Digitale Medien
    Digitale Medien
    Laser-induced free-carrier absorption in Si single crystal (1984)
    Springer
    Applied physics 33 (1984), S. 107-111 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 79.20 ; 81
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The transmitted energy density in thin single Si crystal, wafers is measured atλ=1.06 μm as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm2. The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm2 energy density range are fitted with an Auger constant of 10−30 cm6s−1.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617616
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  • 2
    Digitale Medien
    Digitale Medien
    Surface channeling of swift light ions (1984)
    Springer
    Applied physics 33 (1984), S. 121-131 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 78.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A fast computer code is developed to provide information about the trajectories of swift light particles incident on crystalline targets under surface channeling conditions. The approximations used in the model are tested by comparison of trajectory calculations with the MARLOWE simulation program. The simulation of experimental energy distributions allows discussing various inelastic energy loss models for the interaction of 150 keV protons with a nickel surface. The results suggest that plasmon excitations are not sufficient to account for the measured energy losses. It is found that the Oen-Robinson formula, including inelastic energy losses by single electron excitations in dense materials reasonably well applies to the reflection of light ions from metallic surfaces in channeling conditions. The measured light intensity emitted from 200 keV He+ reflected ions in various directions close to compact atomic surface rows is compared with the calculated reflection coefficient. The results suggest that most of the particles reflected in ionic state do not penetrate the target surface. Detailed comparison between light emission measurements and calculated reflection intensities, however, requires accurate modelling of the surface topography as well as of the deexcitation mechanisms involved in the surface reflection of light ions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617618
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  • 3
    Digitale Medien
    Digitale Medien
    Au gettering by Ne and Ar implantation in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 119-124 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 66 ; 85.30 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The gettering efficiency for Au induced by Ne+ and Ar+ implantation has been studied. The depth distribution of gettered Au as a function of annealing temperature and dose of implanted Ne+ and Ar+ ions are presented. The experiment shows that the maximum efficiency of gettering occurs when the implantation doses are comparable with amorphization dose.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00620641
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  • 4
    Digitale Medien
    Digitale Medien
    A model of sputtering from spikes (1982)
    Springer
    Applied physics 28 (1982), S. 175-178 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A simple model of sputtering from spikes is described based upon the solution of a general heat conduction equation for spherical symmetry. The model accounts for many anomalies observed in energy spectra of sputtered atoms.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617983
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  • 5
    Digitale Medien
    Digitale Medien
    On the inelastic-loss approximation for keV-energy ion collisions in solids (1981)
    Springer
    Applied physics 24 (1981), S. 121-126 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Inelastic energy-loss in a single collisionT e and related stopping cross-sectionT e based on the Firsov model are evaluated for different screening functions in the elastic interaction potentials. Various approximations ofT e andS e for keV-ions in solids are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00902267
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  • 6
    Digitale Medien
    Digitale Medien
    Frequency breakdown in semiconductors (1980)
    Springer
    Applied physics 22 (1980), S. 95-99 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 77.20 ; 79.20 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The effect of the frequency of the applied voltage on the breakdown of semiconductors is investigated. Unlike earlier observations, our experiment yields, in some cases, a breakdown voltage versus frequency curve which is similar in nature to the high-frequency breakdown characteristics in gas devices wherein the breakdown voltage shows a minimum at a certain frequency. A possible theoretical explanation for the above behaviour of semiconductor devices based on dielectric heating is given, which is in fair agreement with the observations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00897939
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  • 7
    Digitale Medien
    Digitale Medien
    Sputtering of Cu and Zn atoms from elemental and alloy targets (1980)
    Springer
    Applied physics 23 (1980), S. 89-92 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The energy distributions of Cu and Zn atoms sputtered from elements and CuxZn1-x alloys (x=0.80, 0.24) with a 6 keV Ar+ beam have been measured. It was found that the collision-cascade theory properly described the flux of sputtered atoms. From the spectra the binding energies of Cu and Zn atoms in the elemental and alloy surfaces were determined. The collision-cascade theory and the experimentally adjusted values of the binding energies allowed for calculation of the total and partial sputtering yields, and the equilibrium surface composition of the ion bombarded alloys.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00899575
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  • 8
    Digitale Medien
    Digitale Medien
    Computer simulation of fast recoil ejection from single crystal surfaces (1981)
    Springer
    Applied physics 25 (1981), S. 239-248 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The computer simulation program MARLOWE is used to analyze the most probable surface recoil processes leading to ejection of atoms from (001) gold surfaces subsequent to the irradiation with 20 keV argon atoms. The occurence of two-and threedimensional mechanisms resulting from high-energy recoils involving one and two atomic layers is discussed for atoms ejected in a direction parallel to the plane of incidence. Generally, a close correspondence is found between the mechanisms involved and the features in the energy distributions. The occurence of direct and deflected recoils is confirmed, as well as mechanisms involving the generation of displacements in the two first atomic layers. The dependence of these mechanisms on the conditions of incidence and the ejection direction is investigated. It is suggested that three-dimensional effects, although dominating, mainly contribute to the background in the energy distributions. The intensities in the features in the energy distributions were found to be strongly influenced by shadowing; affecting both the one-and two-layer processes. The influence of thermal vibrations, surface defects and impurities is briefly examined.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00902977
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  • 9
    Digitale Medien
    Digitale Medien
    Depth of origin of sputtered atoms (1981)
    Springer
    Applied physics 25 (1981), S. 307-310 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 68.55 ; 61.80 ; 34
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Estimates are given for the distribution of the depth of origin of sputtered atoms in the low-fluence limit, as well as the corresponding distribution of atoms sputtered into a given energy interval. The former distribution is well described by an exponential profile, with the characteristic depth being consistent with previous results. The latter distribution is characterized by an energy-dependent depth scale and a shape that varies from exponential at low sputtered-atom energies to inverse-power form at higher energies.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00902988
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  • 10
    Digitale Medien
    Digitale Medien
    Trapping and reflection coefficients for3He in Ni at oblique incidence (1983)
    Springer
    Applied physics 31 (1983), S. 37-44 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The areal density and the depth distribution of3He trapped in Ni as a function of the bombarding fiuence was measured in the energy range of 1–25 keV and at angles of incidence between 0 and 85° using nuclear reaction analysis. At fluences below saturation a linear relation is found between the areal density and the fiuence. From its slope the trapping and reflection coefficients can be determined. The experimental data for trapping and reflection coefficients and for the depth profiles were compared with computer simulation results from the TRIM program. To reduce uncertainties in the absolute values of the experimental trapping coefficients, they were normalized to the TRIM values at normal incidence. The dependence of the measured reflection coefficient on the angle of incidence between 0 and 80° shows good agreement with the calculated data for incident energies from 3 to 25 keV, but for 1 keV the measured reflection coefficients are higher than the calculated ones.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617186
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  • 11
    Digitale Medien
    Digitale Medien
    Core electron excitation spectra of diamond, graphite, and glassy carbon (1984)
    Springer
    Applied physics 34 (1984), S. 35-39 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 71.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Low-energy electron energy loss spectra in theC(1s) core electron excitation region have been measured in diamond, graphite and glassy carbon in the non-differentiated form. The background subtractedN(E) spectrum has been proved to reflect the density-of-states (DOS) of the conduction band well, and the conduction band structures of these materials have been elucidated. The energy positions of the symmetry points in their conduction bands have been determined from the second-derivative spectra, which were obtained by numerical differentiation of the measuredN(E) spectra.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617572
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  • 12
    Digitale Medien
    Digitale Medien
    Energy distributions of low energy H ions backscattered from graphite, stainless steel, and molybdenum (1982)
    Springer
    Applied physics 27 (1982), S. 263-268 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Energy distributions of H+ and H− backscattered from graphite, stainless steel and molybdenum were measured for low incident beam energies (150∼1500 eV). The energy distributions of H− resembled that of H+, while the intensity ratio of H− to H+ varied from material to material and with the incident proton energy. A peak in the energy distribution moved to the “cutoff” energy with decreasing incident energy, which can be attributed to an increase in nuclear stopping cross section and a decrease in electronic stopping cross section. The ratio of the peak energy to the incident energy is related to the reduced energy ɛ of incident beam independent of target materials in the measured region (0.03〈ɛ〈 3.3).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00619090
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  • 13
    Digitale Medien
    Digitale Medien
    On the fluence dependence of the sputtering yield for low-energy noble gas ions (1982)
    Springer
    Applied physics 29 (1982), S. 133-139 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 68.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The fluence dependence of the sputtering yield has been studied on amorphous silicon under uhv conditions with 0.5 to 5keV Ar+ using the KARMA technique (Kombinierte Auger/Röntgen Mikro-Analyse). It allows to measure simultaneously the surface composition, the differential sputtering yield, and the total amount of implanted gas. For all energies, the yield increases initially and reaches saturation after the removal of a layer the thickness of which is closely correlated to the ion range. Gas implantation as a cause for these fluence effects can be ruled out by quantitative analysis. The relative yield increase is found to be larger for low energies than for higher ones. Both these findings can be qualitatively explained by a simple damage collection model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617769
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  • 14
    Digitale Medien
    Digitale Medien
    Energy and spatial redistributions of the particle flux resulting from its interaction with the scattering center (1982)
    Springer
    Applied physics 28 (1982), S. 189-194 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Energy and intensity distributions of both projectiles and recoil atoms on the plane behind the scattering center at finite distance are calculated for different projectile-to-target mass ratio and different projectile energies. The projectile energy and intensity have been found to be double-valued or three-valued functions of the distance from the collision epicenter. At the same time, the recoil energy and intensity have proved to single-valued and double-valued functions of the distance from the collision epicenter for parallel and divergent projectile fluxes, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617985
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  • 15
    Digitale Medien
    Digitale Medien
    Al reaction with SiO2 an auger electron spectroscopy and energy loss spectroscopy study (1982)
    Springer
    Applied physics 28 (1982), S. 247-250 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 73.60 ; 79.20 ; 82.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Evidence for a reaction between aluminium and SiO2 film is presented using Auger electron spectroscopy (AES) and low-energy electron-loss spectroscopy (ELS) techniques. This reaction is studied “in situ” during the manufacture of metal insulator semiconductor devices (MIS), under ultra-high vacuum conditions (UHV). A reduction of the SiO2 film upon aluminization occurs, even at room temperature, giving rise to a complex interface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00618702
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  • 16
    Digitale Medien
    Digitale Medien
    Brightness enhancement of slow positron beams (1980)
    Springer
    Applied physics 23 (1980), S. 189-191 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 78.70 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The brightness of slow positron beams can be enhanced significantly by repeated stages of moderation, acceleration and focusing. Presently available data suggest that the source spot area should decrease by 10−4 after each stage with only a modest loss of intensity. Beams with very small angular divergence, which could be made with this technique, would be useful for characterizing surfaces by positron diffraction and microscopy. Using such beams it is possible to envision the study of new exotic systems such as thee +-e − plasma and the positronium molecule.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00899716
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  • 17
    Digitale Medien
    Digitale Medien
    A search for a thermal spike effect in sputtering (1983)
    Springer
    Applied physics 30 (1983), S. 83-86 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The temperature dependence of the sputtering yield was measured for lOOkeV per atom bombardment of silver with molecular and atomic antimony ions. No exponential increase of the yield was found in the temperature range from 25° to 775 °C, although a pronounced nonlinear effect is observed when the yield of these projectiles is compared,Y(Sb 2 + )≈ 1.5×[2Y(Sb+)]. We conclude that there is no influence of the lattice temperature on collision spikes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614908
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  • 18
    Digitale Medien
    Digitale Medien
    Thresholds for impact ionisation in InSb at 77K (1981)
    Springer
    Applied physics 26 (1981), S. 157-163 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.40 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The thresholds in energy for 5 different impact ionisation processes in InSb at 77K were calculated on the basis of a critical review of the available bandstructure data for largerk values. An accurate threshold value of 243 meV ± a few meV is given for the main process. It is shown that production of light holes by impact ionisation is highly improbable. It is suggested that double ionisation and light hole initiated ionisation may be equally important in interpreting quantum efficiency data. Impact ionisation by L-band electrons may contribute significantly to the avalanche in Gunn domains, explaining the rapid quenching of the latter.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614750
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  • 19
    Digitale Medien
    Digitale Medien
    Trapping and reflection coefficients for deuterium in graphite at oblique incidence (1984)
    Springer
    Applied physics 33 (1984), S. 265-268 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Trapping and particle reflection coefficients for 0.4–10keVD on graphite have been measured for angles of incidence 0≦α≦85° by determining the areal density of implanted D as a function of the implanted fluence. The experimental data are compared to computer calculations with the TRIM-program. The agreement between measurement and calculation is good.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614669
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  • 20
    Digitale Medien
    Digitale Medien
    Depth profiling by ion-beam spectrometry (1982)
    Springer
    Applied physics 27 (1982), S. 183-195 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A procedure is developed for determining the stoichiometry of a sample as function of depth from ion-beam analysis energy spectra. The approach is in principle equally applicable to back scattering experiments, experiments involving nuclear reactions with known cross sections and experiments combining these techniques. The procedure is especially suitable for routine computer evaluation of energy spectra. It is more straightforward and/or involves less rigid assumptions and approximations than alternative approaches. If all elemental signals are measured, an accurate beam dose is not needed. The limitations are basically those inherent to ion beam analysis in general.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00619079
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  • 21
    Digitale Medien
    Digitale Medien
    On the velocity distribution of excited Fe-atoms by sputtering of iron (1982)
    Springer
    Applied physics 29 (1982), S. 53-55 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 32.50
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract From the velocity distribution of excited sputtered particles detailed information on the excitation process can be obtained. In the present paper the first direct measurement of velocity distribution of excited atoms sputtered from a metal target is presented. The irradiation of the Fe-target was performed with 10keV Ar+-ions. The sputtered atoms were detected using pulsed laser induced fluorescence (LIF). The sputtered Fe atoms in the metastable statea 5 F 5 at 0.86 eV shows a much broader distribution, than found for the ground-state atoms, but no energy threshold, implied in the statistical excitation models, was found.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00632425
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  • 22
    Digitale Medien
    Digitale Medien
    A study of electronic states near the interface in ferroelectric-semiconductor heterojunction prepared by rf sputtering of PbTiO3 (1982)
    Springer
    Applied physics 28 (1982), S. 161-166 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 73.20 ; 73.40 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Interface states in the ferroelectric-semiconductor junction have been investigated from analyses of DLTS andC-V data. Two trap levels are located at 0.21 and 0.36 eV below the conduction band near the silicon side of the interface in the MFS (Metal-Ferroelectric-Semiconductor) structure. The interface states density has been drastically reduced by putting an oxide layer between ferroelectric and semiconductor with certain heat treatment in H2 atmosphere at 500 °C. It has been found that the MFMOS (Metal-Ferroelectric-Metal-Oxide-Semiconductor) structure shows the least interface states density (less than 1011cm−2eV−1) with the maximal dielectric constant of PbTiO3 thin films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617981
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  • 23
    Digitale Medien
    Digitale Medien
    Distribution and heat-treatment migration studies of Cr implanted GaAs by SIMS (1980)
    Springer
    Applied physics 23 (1980), S. 21-24 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 65 ; 68 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Depth profiles of 190 keV Cr implanted-GaAs have been measured by SIMS analysis. The as-implanted Cr profiles are approximately Gaussian with good agreement between theory and experiment on the projected range. A fast migration of Cr is observed after heat treatment under encapsulation, and even as soon as the silicon nitride film is deposited. There is no evidence for Cr precipitation, even in the case of the largest implanted dose (1015 cm−2).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00899565
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  • 24
    Digitale Medien
    Digitale Medien
    Investigations of near region of surface of soda-lime-silica glass and lithium-silica glass with secondary ion mass spectrometry (1980)
    Springer
    Applied physics 22 (1980), S. 233-236 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 81
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Investigations on the layers near the surface of different glasses by means of secondary ion mass spectrometry are described. Both enrichment- and depletion zones can be demonstrated. The results are discussed on the basis of the model on corrosion behaviour by Hench.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00886012
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  • 25
    Digitale Medien
    Digitale Medien
    The velocity distribution of sputtered Zr atoms for irradiation at normal and oblique angle of incidence (1984)
    Springer
    Applied physics 33 (1984), S. 235-241 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20 ; 32.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Laser-induced fluorescence by means of a cw dye laser has been used for investigating the velocity distribution of sputtered Zr atoms in the ground state. In order to evaluate the data the excitation probability of the atoms in the observation volume has been measured. The velocity distribution of Zr atoms for irradiation with Ar+-ions as well as light ions at normal and oblique angle (70°) of incidence is presented.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614664
    Standort Signatur Erwartet Verfügbarkeit
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  • 26
    Digitale Medien
    Digitale Medien
    A semiempirical formula describing the recoil yield in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 161-167 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 34 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Krypton ions in the energy range 20–300 keV are used to generate recoiling atoms in silicon from thin layers evaporated on its surface. The recoil yields and the impurity distributions in the substrate have been measured as a function of several parameters (energy, thickness of the layer, incident dose). The results are used to propose a new formulation of the recoil yield based on the possibility, for both projectiles and recoiling atoms, to remove impurities previously introduced in silicon. The calculation fits very well the experimental results using displacement energies close to the generally admitted values
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616970
    Standort Signatur Erwartet Verfügbarkeit
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