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  • 11
    Electronic Resource
    Electronic Resource
    Photoconductive properties of the Er-doped InP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 466-468 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoconductive properties of Er-doped InP layers prepared by atmospheric pressure metalorganic vapor phase epitaxy were investigated. Two Er3+-related photoconductive transitions were observed at 0.807 and 1.27 eV. The 0.807 eV transition involves a 4f-shell intracenter transition. The 1.27 eV transition is attributed to a free to bound transition involving the Er3+-related trapping center. Presumably this trapping level is important in the energy transfer process determining the Er3+-related emission efficiency in InP. A model is developed to explain the photoconductive response of the Er-doped materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111131
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  • 12
    Electronic Resource
    Electronic Resource
    The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3124-3129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs has been investigated. This contact scheme has been shown to form planar contact interfaces with contact resistivities less than 1 × 10−6 Ω cm2. This investigation demonstrates that the contact resistivity can be modeled by a sum of two components in series: (i) a contact resistivity due to the metal-GaAs interface and (ii) a contact resistivity due to the high-low junction formed between the highly doped regrown GaAs layer and the substrate. For degenerately doped samples (4.5 × 1019 cm−3), the contact resistivity is nearly independent of the temperature from 300 to about 30 K, indicating that the dominant resistivity is that across the metal-semiconductor tunneling barrier. For samples with lower doping concentrations (≤ 1.5 × 1018 cm−3), the contact resistivity increases with decreasing temperature, suggesting the dominance of the contact resistivity due to the high-low junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348579
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  • 13
    Electronic Resource
    Electronic Resource
    Nonspiking ohmic contact to p-GaAs by solid-phase regrowth (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5714-5718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-resistance and nonspiking contact consisting of a layered structure of Si/Ni(Mg) on p-GaAs is formed by solid-phase regrowth. Backside secondary-ion mass spectrometry and cross-sectional transmission electron microscopy show an initial reaction between Ni and GaAs to form NixGaAs which is later decomposed to form NiSi by reacting with the Si overlayer. This reaction leads to the solid-phase epitaxial regrowth of a p+ -GaAs layer doped with Mg. The total consumption of substrate is limited to a few hundred angstroms. The as-formed ohmic contact structure is uniform and planar with an average specific contact resistivity of ∼7×10−7 Ω cm2 on substrates doped to 8×1018 cm−3. The thermal stability of this contact scheme is also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346990
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  • 14
    Electronic Resource
    Electronic Resource
    An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4364-4372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Pd-In-Ge nonspiking Ohmic contact to n-GaAs has been investigated using the transmission line, the Kelvin, and the Cox and Strack structures. It has been found that a layered structure of Pd/In/Pd/n-GaAs with 10–20 A(ring) of Ge imbedded in the Pd layer adjacent to the GaAs can lead to a hybrid contact. When the Ohmic formation temperature is above 550 °C, a layer of InxGa1−xAs doped with Ge is formed between the GaAs structure and the metallization. When the Ohmic formation temperature is below 550 °C, a regrown layer of GaAs also doped with Ge is formed at the metallization/GaAs interface. The contact resistivity of 2–3×10−7 Ω cm2 for this contact structure is nearly independent of the contact area from 900 to 0.2 μm2. Low-temperature Ohmic characteristics and thermal stability are also examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348360
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  • 15
    Electronic Resource
    Electronic Resource
    KrF laser-induced ablation and patterning of Y–Ba–Cu–O films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2512-2514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ablation and patterning of Y–Ba–Cu–O films on (100) SrTiO3 and (100) MgO substrates by KrF excimer-laser light projection was investigated. Three different regimes of laser-material interactions were observed. Transition temperatures and critical current densities in laser-fabricated strip lines were investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346519
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  • 16
    Electronic Resource
    Electronic Resource
    Magnetoresistivity and metamagnetism of the Nd33Fe50Al17 alloy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1763-1765 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ternary phase has been identified in the rare-earth transition metal Nd–Fe–Al system. This phase has a composition close to Nd5(Fe3Al)12 and is antiferromagnetic with a Neel temperature of approximately 260 K. A clear step appears in magnetization curves of the isotropic ribbon at temperatures below 140 K, indicating metamagnetism. Magnetoresistivity (MR) has been observed in this compound. MR increases with decreasing temperature and is estimated to be 7.2% at 4.2 K. This compound exhibits MR of 1% in the paramagnetic state at room temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124812
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  • 17
    Electronic Resource
    Electronic Resource
    Electroluminescence from Er-doped GaP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 584-586 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroluminescent properties of the Er-doped GaP light-emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er3+ intra-4f-shell emission at 0.80 eV is observed over the temperature range of 12–300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112985
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  • 18
    Electronic Resource
    Electronic Resource
    Observation of enhanced photoluminescence in erbium-doped semiconductor microdisk resonator (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2843-2845 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental results from an erbium-doped gallium phosphide microdisk resonator pumped by a Ti-sapphire laser at 980 nm. Fabrication and characterization of the microdisk resonator are discussed. Enhanced Er+3 intra-4f-shell photoluminescence was observed in the microdisk resonator due to microcavity effect and compared to a thin film sample. At low pumping power intensity, the photoluminescence from erbium-doped gallium phosphide microdisks is an order stronger than that from a thin film sample. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113448
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  • 19
    Electronic Resource
    Electronic Resource
    Effect of free carriers on the luminescence efficiency of InP:Er (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 845-847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the effect of free carriers on the luminescence efficiency of Er-doped InP is reported. As free carrier concentration increases from 1013 to 1017 cm−3, an increase in the Er3+-related emission intensity is observed. This increase is attributed to the enhanced probability of formation of bound excitons at the rare earth centers. For carrier concentrations of greater than 3×1017 up to 1020 cm−3, the luminescence intensity is only weakly quenched. Free carrier Auger processes play a limited role in determining the Er3+ luminescence efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112179
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  • 20
    Electronic Resource
    Electronic Resource
    Thermal quenching properties of Er-doped GaP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1537-1539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescent properties of the Er-doped epitaxial layers of GaP prepared by metalorganic vapor phase epitaxy were studied as a function of temperature. Strong characteristic Er3+ intra-4f-shell emission is observed over the temperature range of 12–300 K. The integrated intensity of the 0.805-eV emission is only weakly temperature dependent, decreasing by a factor of 2 as the temperature increases from 12 to 300 K. The observation of minimal thermal quenching indicates that Er-doped GaP is a promising material for optical devices emitting at 1.54 μm and operating at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111884
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