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  • 11
    Electronic Resource
    Electronic Resource
    A 1-kpps transversely excited atmospheric CO2 laser excited by an all-solid-state exciter with a magnetic pulse compressor (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1456-1459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-repetition-rate operation of a transversely excited atmospheric CO2 laser pumped by an all-solid-state exciter consisting of a two-stage magnetic pulse compressor has been tested. At a repetition-rate frequency of 1 kpps, an average laser power of 250 W was obtained. A maximum repetition rate of 1.1 kpps was limited by either the capability of the switching power supply (20 kW) or the turn-off time of the silicon controlled rectifier used (400 μs). The energy transfer efficiency of the exciter was 75%, and the overall laser efficiency was 3.2%. By changing the amount of the available magnetic flux swing of the cores used, 30% regulation on the input energy was also achieved with a constant energy transfer efficiency of 78%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346673
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  • 12
    Electronic Resource
    Electronic Resource
    Direct overwrite capability in transition-metal-rich side rare-earth transition amorphous films (abstract) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4447-4447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of direct overwrite utilizing a demagnetization field was successfully demonstrated by employing transition-metal-rich side Tb-Fe-Co-Cr amorphous films, which is different from previously reported rare-earth-rich side films.1,2 For this purpose, 3.5-in. magneto-optical discs were made in the form SiN/TbFeCoCr/SiN on a pregrooved polycarbonate substrate. To evaluate the capability of direct overwrite, we chose the writing and erasure conditions in such a way that erasure laser power (PE) was set higher than the writing power (PW), applying a constant weak external field (Hex) directed in the direction of erasure. Thermomagnetic writing and erasure at 1.76 MHz were carried out on a disk rotating at 1800 rpm. The carrier-to-noise ratio, C/N, thus obtained was 26 dB in the conditions of PW=8 mW and Hex=−100 Oe. This signal was completely erased by the dc erase procedure (PE=10 mW and Hex=−100 Oe). Furthermore, this signal value was repeatedly obtained by the above writing and erasure sequence. However, when the writing laser power is set higher than the erasure power, the initial readout C/N decreases rapidly within a few write/erasure cycles and cannot be repeatedly reproduced. Observation of the above written bits by using a polarized optical microscope showed no irregular shape domains, but did show a relatively weak light intensity coming from the whole domain area. A more detailed analysis of domain formation will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344899
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  • 13
    Electronic Resource
    Electronic Resource
    Electronic structure calculations for Gd32Co68 and Gd18Co82 amorphous alloys : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6577-6579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin-polarized electronic structures of Gd18Co82 and Gd32Co68 amorphous alloys are calculated self-consistently in order to study their magnetic properties. The calculated electronic-state densities of the Gd and Co d states do not have well-resolved peaks; this is a characteristic of amorphous alloys. The magnetic moments of Co and Gd are 1.51 and 7.16 μB in Gd18Co82, and 1.38 and 7.14 μB in Gd32Co68, respectively. These values show good agreement with experimental data. The exchange splitting of Co d states in Gd32Co68 is smaller than in Gd18Co82, while the density of states at the Fermi level in the former is higher than that in the latter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349862
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  • 14
    Electronic Resource
    Electronic Resource
    Pulsed neutron diffraction study on the structures of glassy 7LiX–KX–CsX–BaX2 (X=Cl, Br, and I) (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 5345-5351 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The structures of glassy 7LiX–KX–CsX–BaX2 (X=Cl, Br, and I) have been investigated by means of pulsed neutron diffraction experiment. The obtained total radial distribution functions were discussed with the help of the molecular dynamics simulation based on the Tosi–Fumi potential. The Li–X (X=Cl, Br, and I) distances in the three glasses are 2.37, 2.49, and 2.70 A(ring), respectively, which are 0.2–0.3 A(ring) shorter than those in the rocksalt-type LiX crystals. For each system, it is found that the coordination number of the X− ions around the Li+ ions is about four when only the closely contacting X− ions are counted. Because of the 1:1 monovalent character of the present systems, the first coordination shell around the Li+ ions has the ill-defined outer extent, compared with the 4:2 and 2:1 charged systems such as SiO2 and ZnCl2. This causes the increase of the coordination number, from four to six, when all the near-neighbor X− ions are counted as the surrounding ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465978
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  • 15
    Electronic Resource
    Electronic Resource
    High-efficiency, all-solid-state exciters for high-repetition-rated, high-power TEA CO2 lasers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2092-2096 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed two high-efficiency, all-solid-state exciters for pumping TEA CO2 lasers, and experimentally proved their energy scalability, high-efficiency operation, and high repetition rate operation. The small-scale all-solid-state exciter of the two-stage magnetic pulse compressor was operated with an output transfer energy of 8.8 J/pulse and energy transfer efficiency of 78%, and the average CO2 laser power of 117 W was obtained at 250 pps using this exciter. The larger all-solid-state exciter of three-stage magnetic pulse compressor is ten times as large as the small one, and operated with an output transfer energy of 95 J/pulse and an energy transfer efficiency of 84%. With the larger exciter, a CO2 laser output of 9.1 J/pulse was obtained with a total laser efficiency of 8.1%. As a result, the scalability of the exciter for the CO2 laser has been demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141423
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  • 16
    Electronic Resource
    Electronic Resource
    An all solid-state magnetic pulse compressor with amorphous metals for pumping a repetition-rated KrF excimer laser (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1196-1199 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed an all solid-state exciter consisting of a magnetic pulse compressor with a transfer energy of 10 J/pulse approximately for KrF discharge lasers. The magnetic pulse compressor was operated with an energy transfer efficiency of 65% at a repetition rate frequency of 40 pps. A KrF excimer laser excited by the all solid-state exciter was operated with an average laser power of 2.7 W. Four types of amorphous metals as a magnetic core material were experimentally compared in terms of their magnetic induction and magnetic loss so as to be used in the all solid-state exciter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141211
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  • 17
    Electronic Resource
    Electronic Resource
    A near-infrared photoluminescence study of GaAs nanocrystals in SiO2 films formed by sequential ion implantation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1762-1764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied photoluminescence (PL) properties of Ga+ and As+ implanted SiO2 films on Si substrate. After thermal annealing, zinc blende GaAs nanocrystals are formed in SiO2 films and several PL bands appear in the red and near-infrared spectral region. Defects and impurities in GaAs nanocrystals and SiO2 cause weak luminescence in the near-infrared spectral region at low temperatures. After low-energy deuterium implantation, the defect PL intensity decreases and the red PL from GaAs nanocrystals is clearly observed. It is demonstrated that GaAs/SiO2 nanocompostites with low defect density are fabricated by sequential ion implantation followed by thermal annealing and hydrogen passivation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370960
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  • 18
    Electronic Resource
    Electronic Resource
    Photoabsorption cross section of XeF2 from 150 to 275 nm by forward-scattering electron energy-loss spectroscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4940-4942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the technique of high-incident-energy forward-scattering electron energy-loss spectroscopy, we have derived the relative photoabsorption cross section of xenon difluoride from 150 to 275 nm. Normalization of our data to two previous measurements which used conventional photoabsorption techniques shows good agreement with an early measurement over the entire spectral range, but significant disagreement with more recent data for wavelengths greater than 175 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339798
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  • 19
    Electronic Resource
    Electronic Resource
    Electronic structure calculations for a rare earth–transition metal amorphous alloy system (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5334-5336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to clarify the origin of the Kerr effect for a rare earth–transition metal (RE-TM) amorphous alloy system, electronic structure calculations were performed for the first time in an amorphous system including f orbitals. Tb20Fe80 and Nd20Fe80 amorphous alloy compositions were chosen for the present work. The electronic structures were calculated by using the most localized linear muffin-tin orbital method based on atomic sphere approximation and the recursion method. To evaluate the first excited f states of rare-earth metals, it was assumed that the occupied f electrons were sufficiently localized in the inner core of a RE atom to be treated as core electrons. The calculated density of states for a Tb20Fe80 amorphous alloy shows good agreement with reported experimental results measured by x-ray photoelectron spectroscopy (XPS) and inverse XPS. In particular, the unoccupied f-state level and the hybridization property between the Tb d state and the Fe d state were well reproduced. The calculated electronic structure for Nd20Fe80 reveals that the enhancement of the Kerr effect at a light wavelength of around 300 nm in a Nd alloy system originates from the interband transition from d to f state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344602
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  • 20
    Electronic Resource
    Electronic Resource
    Direct overwriting capability in TM-rich side rare-earth transition metal amorphous films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2690-2692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of a new method for direct overwrite with a power-modulated laser beam under a constant external bias field Hex fixed in the same direction as an initializing field Hinit was demonstrated by means of a dynamic disk tester. TbFeCoCr amorphous films with compensation temperature (Tcomp) far below room temperature were employed, but coercivity falls below 200 Oe at 200 °C, while the saturation magnetization remains high. We found that written pits are formed by a demagnetization field Hd in the region of a weak Hex, whereas for a stronger Hex they are formed by a effective external field Heff(=Hex−Hd) fixed in the same direction as Hinit. By using a power modulation between 9 and 5 mW under a constant field of −100 Oe, we were able to demonstrate direct overwrite, although the readout carrier-to-noise ratio was low (18 dB).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102828
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