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  • 1
    Electronic Resource
    Electronic Resource
    Observation of Rydberg transitions from the inner valence shell of ethane (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 1499-1501 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electron impact spectrum of ethane has been examined in a region that includes ionization out of the inner valence shell. One diffuse structure and a progression of ten vibrational bands have been found in a 4 eV range below and to some degree overlapping the 2A2u ion threshold. Evidence indicates that the observed transitions belong to the symmetry forbidden Rydberg series (2a2u)2→(2a2u, npσ or npπ).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.453259
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  • 2
    Electronic Resource
    Electronic Resource
    Electron energy loss spectroscopy of disilane (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 4320-4323 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron energy loss spectra of disilane have been recorded over an excitation energy range of 20 eV employing electrons of 20 and 200 eV incident energy for scattering angles of 0°–90°. Every transition detected except one appears at an energy consistent with the first observed members of Rydberg series converging to one of four possible ion states. The first two observed transitions belong to (2a1g)2→1,3(2a1g,4s) dipole forbidden channels appearing at excitation energies of ∼6.3 and 7.05 eV for the triplet and singlet, respectively. Evidence is presented for the identification of additional forbidden transitions as well as possible low-lying valence transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.453791
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of cadmium to sulfur ratio on the photoluminescence of CdS-doped glasses (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2251-2256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to determine the origin of the long-wavelength photoluminescence spectra of CdS-doped glasses, luminescence spectra from glasses doped with CdSx having various Cd to S ratios were examined. The intensity of the luminescence peak decreased with increasing sulfur content, which indicates that the luminescence could be associated with sulfur-deficient trap centers. With the shift of the band gap of CdSx to lower energy by crystal growth, the peak position of the trap-center-related luminescence also shifted to lower energy. The ratio of these two energy shifts indicates that the trap center is donorlike, not acceptorlike. The shape of this luminescence band was dependent on the excitation wavelength, which indicates that more than two types of trap centers exist in the glass.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356288
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  • 4
    Electronic Resource
    Electronic Resource
    A 1-kpps transversely excited atmospheric CO2 laser excited by an all-solid-state exciter with a magnetic pulse compressor (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1456-1459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-repetition-rate operation of a transversely excited atmospheric CO2 laser pumped by an all-solid-state exciter consisting of a two-stage magnetic pulse compressor has been tested. At a repetition-rate frequency of 1 kpps, an average laser power of 250 W was obtained. A maximum repetition rate of 1.1 kpps was limited by either the capability of the switching power supply (20 kW) or the turn-off time of the silicon controlled rectifier used (400 μs). The energy transfer efficiency of the exciter was 75%, and the overall laser efficiency was 3.2%. By changing the amount of the available magnetic flux swing of the cores used, 30% regulation on the input energy was also achieved with a constant energy transfer efficiency of 78%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346673
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  • 5
    Electronic Resource
    Electronic Resource
    Direct overwrite capability in transition-metal-rich side rare-earth transition amorphous films (abstract) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4447-4447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of direct overwrite utilizing a demagnetization field was successfully demonstrated by employing transition-metal-rich side Tb-Fe-Co-Cr amorphous films, which is different from previously reported rare-earth-rich side films.1,2 For this purpose, 3.5-in. magneto-optical discs were made in the form SiN/TbFeCoCr/SiN on a pregrooved polycarbonate substrate. To evaluate the capability of direct overwrite, we chose the writing and erasure conditions in such a way that erasure laser power (PE) was set higher than the writing power (PW), applying a constant weak external field (Hex) directed in the direction of erasure. Thermomagnetic writing and erasure at 1.76 MHz were carried out on a disk rotating at 1800 rpm. The carrier-to-noise ratio, C/N, thus obtained was 26 dB in the conditions of PW=8 mW and Hex=−100 Oe. This signal was completely erased by the dc erase procedure (PE=10 mW and Hex=−100 Oe). Furthermore, this signal value was repeatedly obtained by the above writing and erasure sequence. However, when the writing laser power is set higher than the erasure power, the initial readout C/N decreases rapidly within a few write/erasure cycles and cannot be repeatedly reproduced. Observation of the above written bits by using a polarized optical microscope showed no irregular shape domains, but did show a relatively weak light intensity coming from the whole domain area. A more detailed analysis of domain formation will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344899
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  • 6
    Electronic Resource
    Electronic Resource
    Electronic structure calculations for Gd32Co68 and Gd18Co82 amorphous alloys : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6577-6579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin-polarized electronic structures of Gd18Co82 and Gd32Co68 amorphous alloys are calculated self-consistently in order to study their magnetic properties. The calculated electronic-state densities of the Gd and Co d states do not have well-resolved peaks; this is a characteristic of amorphous alloys. The magnetic moments of Co and Gd are 1.51 and 7.16 μB in Gd18Co82, and 1.38 and 7.14 μB in Gd32Co68, respectively. These values show good agreement with experimental data. The exchange splitting of Co d states in Gd32Co68 is smaller than in Gd18Co82, while the density of states at the Fermi level in the former is higher than that in the latter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349862
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  • 7
    Electronic Resource
    Electronic Resource
    Pulsed neutron diffraction study on the structures of glassy 7LiX–KX–CsX–BaX2 (X=Cl, Br, and I) (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 5345-5351 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The structures of glassy 7LiX–KX–CsX–BaX2 (X=Cl, Br, and I) have been investigated by means of pulsed neutron diffraction experiment. The obtained total radial distribution functions were discussed with the help of the molecular dynamics simulation based on the Tosi–Fumi potential. The Li–X (X=Cl, Br, and I) distances in the three glasses are 2.37, 2.49, and 2.70 A(ring), respectively, which are 0.2–0.3 A(ring) shorter than those in the rocksalt-type LiX crystals. For each system, it is found that the coordination number of the X− ions around the Li+ ions is about four when only the closely contacting X− ions are counted. Because of the 1:1 monovalent character of the present systems, the first coordination shell around the Li+ ions has the ill-defined outer extent, compared with the 4:2 and 2:1 charged systems such as SiO2 and ZnCl2. This causes the increase of the coordination number, from four to six, when all the near-neighbor X− ions are counted as the surrounding ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465978
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  • 8
    Electronic Resource
    Electronic Resource
    High-efficiency, all-solid-state exciters for high-repetition-rated, high-power TEA CO2 lasers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2092-2096 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed two high-efficiency, all-solid-state exciters for pumping TEA CO2 lasers, and experimentally proved their energy scalability, high-efficiency operation, and high repetition rate operation. The small-scale all-solid-state exciter of the two-stage magnetic pulse compressor was operated with an output transfer energy of 8.8 J/pulse and energy transfer efficiency of 78%, and the average CO2 laser power of 117 W was obtained at 250 pps using this exciter. The larger all-solid-state exciter of three-stage magnetic pulse compressor is ten times as large as the small one, and operated with an output transfer energy of 95 J/pulse and an energy transfer efficiency of 84%. With the larger exciter, a CO2 laser output of 9.1 J/pulse was obtained with a total laser efficiency of 8.1%. As a result, the scalability of the exciter for the CO2 laser has been demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141423
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  • 9
    Electronic Resource
    Electronic Resource
    An all solid-state magnetic pulse compressor with amorphous metals for pumping a repetition-rated KrF excimer laser (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1196-1199 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed an all solid-state exciter consisting of a magnetic pulse compressor with a transfer energy of 10 J/pulse approximately for KrF discharge lasers. The magnetic pulse compressor was operated with an energy transfer efficiency of 65% at a repetition rate frequency of 40 pps. A KrF excimer laser excited by the all solid-state exciter was operated with an average laser power of 2.7 W. Four types of amorphous metals as a magnetic core material were experimentally compared in terms of their magnetic induction and magnetic loss so as to be used in the all solid-state exciter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141211
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  • 10
    Electronic Resource
    Electronic Resource
    A near-infrared photoluminescence study of GaAs nanocrystals in SiO2 films formed by sequential ion implantation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1762-1764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied photoluminescence (PL) properties of Ga+ and As+ implanted SiO2 films on Si substrate. After thermal annealing, zinc blende GaAs nanocrystals are formed in SiO2 films and several PL bands appear in the red and near-infrared spectral region. Defects and impurities in GaAs nanocrystals and SiO2 cause weak luminescence in the near-infrared spectral region at low temperatures. After low-energy deuterium implantation, the defect PL intensity decreases and the red PL from GaAs nanocrystals is clearly observed. It is demonstrated that GaAs/SiO2 nanocompostites with low defect density are fabricated by sequential ion implantation followed by thermal annealing and hydrogen passivation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370960
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