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  • 1
    Electronic Resource
    Electronic Resource
    Temperature Dependence of Internal Stress and Crystal Growth of Dilute Cu Alloy Films (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 127 (Sept. 2007), p. 147-152 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Annealing behavior of dilute Cu-X alloys (adding element X = transition metal andrare-earth metal with less than 3 at %) was investigated in terms of resistivity, internal stress, graingrowth and hillock formation. The resistivity increases with addition of impurities regardless ofkinds of adding elements. Generally, resistivity starts to decrease on annealing above 200 ºC.Among present Cu dilute alloys, Sn addition shows the lowest resistivity 2.5 μΩcm on annealing at400 ºC. However, compared with a pure Cu film, salient grain growth of present dilute alloys doesnot takes place even at temperatures above 300 ºC , where the grain size is nearly the same as thatof as-deposited films. In-situ surface observation using an atomic force microscope (AFM )revealed that hillocks did not grow on cooling stage (under tension), but started to form on heatingstage (under compression). The scanning electron microscopy (SEM) observation of hillocks thusformed in present dilute alloy films shows that the external appearance of these defects was quitedifferent from those observed in Al and Al alloy films. They most likely grow with a preferentialcrystal plane, not irregular growth like Al and Al alloy films. The internal stresses in most of thepresent as-deposited dilute Cu alloy films were nearly zero or compression of –25 to –100MPa, andupon annealing, they started to increase in tensile manner due to thermal stresses induced by themismatch of the thermal expansion between substrates and deposited films. A large stress relaxationstarted to occur above 250ºC, associating with a large number of hillock formation
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.127.147.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Direct overwrite capability in transition-metal-rich side rare-earth transition amorphous films (abstract) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4447-4447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of direct overwrite utilizing a demagnetization field was successfully demonstrated by employing transition-metal-rich side Tb-Fe-Co-Cr amorphous films, which is different from previously reported rare-earth-rich side films.1,2 For this purpose, 3.5-in. magneto-optical discs were made in the form SiN/TbFeCoCr/SiN on a pregrooved polycarbonate substrate. To evaluate the capability of direct overwrite, we chose the writing and erasure conditions in such a way that erasure laser power (PE) was set higher than the writing power (PW), applying a constant weak external field (Hex) directed in the direction of erasure. Thermomagnetic writing and erasure at 1.76 MHz were carried out on a disk rotating at 1800 rpm. The carrier-to-noise ratio, C/N, thus obtained was 26 dB in the conditions of PW=8 mW and Hex=−100 Oe. This signal was completely erased by the dc erase procedure (PE=10 mW and Hex=−100 Oe). Furthermore, this signal value was repeatedly obtained by the above writing and erasure sequence. However, when the writing laser power is set higher than the erasure power, the initial readout C/N decreases rapidly within a few write/erasure cycles and cannot be repeatedly reproduced. Observation of the above written bits by using a polarized optical microscope showed no irregular shape domains, but did show a relatively weak light intensity coming from the whole domain area. A more detailed analysis of domain formation will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344899
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic structure calculations for Gd32Co68 and Gd18Co82 amorphous alloys : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6577-6579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin-polarized electronic structures of Gd18Co82 and Gd32Co68 amorphous alloys are calculated self-consistently in order to study their magnetic properties. The calculated electronic-state densities of the Gd and Co d states do not have well-resolved peaks; this is a characteristic of amorphous alloys. The magnetic moments of Co and Gd are 1.51 and 7.16 μB in Gd18Co82, and 1.38 and 7.14 μB in Gd32Co68, respectively. These values show good agreement with experimental data. The exchange splitting of Co d states in Gd32Co68 is smaller than in Gd18Co82, while the density of states at the Fermi level in the former is higher than that in the latter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349862
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  • 4
    Electronic Resource
    Electronic Resource
    Triple-layered NdCo amorphous-alloy films for magneto-optical media : 35th Annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4761-4763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-optical recording materials with high remanent Kerr rotation at a short wavelength were successfully obtained in a trilayer form. NdCo amorphous films with an in-plane magnetization were sandwiched between TbFeCo amorphous films with strong perpendicular anisotropy and high coercivity. The thickness of the top layer of the TbFeCo film facing an incident laser beam is less than the light-penetration depth. Triple-layered films [Tb18Fe49Co33 (5 nm thickness)/Nd18Co82(10 nm)/Tb18Fe49Co33(200 nm)] thus obtained show a remanent Kerr rotation angle θKr = 0.37°–0.46° at wavelength λ=400–850 nm, coercivity Hc = 2 kOe, and good square loop (Mr/Ms = 1). The figure of merit (square root of)R¯θK, where R is reflectivity, is 0.24–0.31 at λ=400–850 nm, which is higher than that of conventional TbFeCo amorphous films ((square root of)R¯θK = 0.12–0.27 at λ=400–850 nm).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348952
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  • 5
    Electronic Resource
    Electronic Resource
    Structure analysis of Tb-Fe amorphous films using extended x-ray absorption fine structure (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4035-4042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended x-ray absorption fine structure analysis was employed to obtain insight into the influence of structural change on the magnetic and magneto-optical properties of Tb-Fe amorphous films. Films made by bias sputtering show a 20% lower density and a lower apparent coordination number of Fe atoms around an Fe atom than those made by nonbias sputtering. However, their interatomic distances are unaffected by the sputtering methods. After samples made by nonbias sputtering have been annealed, the atomic distances of Fe-Fe and Tb-Fe tend to increase and decrease, respectively, while the apparent coordination number, N*, and the structural disorder parameter, σ, increase and decrease, respectively, in association with a large deterioration in magnetic and magneto-optical properties. On the other hand, in the case of bias-sputtering films, samples annealed at 200 °C show a large decrease in magnetic anisotropy, Ku, but no significant change in individual atomic distances and apparent coordination number. However, the disorder parameter, σ, increases slightly on annealing at 200 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346240
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  • 6
    Electronic Resource
    Electronic Resource
    Electronic structure calculations for a rare earth–transition metal amorphous alloy system (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5334-5336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to clarify the origin of the Kerr effect for a rare earth–transition metal (RE-TM) amorphous alloy system, electronic structure calculations were performed for the first time in an amorphous system including f orbitals. Tb20Fe80 and Nd20Fe80 amorphous alloy compositions were chosen for the present work. The electronic structures were calculated by using the most localized linear muffin-tin orbital method based on atomic sphere approximation and the recursion method. To evaluate the first excited f states of rare-earth metals, it was assumed that the occupied f electrons were sufficiently localized in the inner core of a RE atom to be treated as core electrons. The calculated density of states for a Tb20Fe80 amorphous alloy shows good agreement with reported experimental results measured by x-ray photoelectron spectroscopy (XPS) and inverse XPS. In particular, the unoccupied f-state level and the hybridization property between the Tb d state and the Fe d state were well reproduced. The calculated electronic structure for Nd20Fe80 reveals that the enhancement of the Kerr effect at a light wavelength of around 300 nm in a Nd alloy system originates from the interband transition from d to f state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344602
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  • 7
    Electronic Resource
    Electronic Resource
    Direct overwriting capability in TM-rich side rare-earth transition metal amorphous films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2690-2692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of a new method for direct overwrite with a power-modulated laser beam under a constant external bias field Hex fixed in the same direction as an initializing field Hinit was demonstrated by means of a dynamic disk tester. TbFeCoCr amorphous films with compensation temperature (Tcomp) far below room temperature were employed, but coercivity falls below 200 Oe at 200 °C, while the saturation magnetization remains high. We found that written pits are formed by a demagnetization field Hd in the region of a weak Hex, whereas for a stronger Hex they are formed by a effective external field Heff(=Hex−Hd) fixed in the same direction as Hinit. By using a power modulation between 9 and 5 mW under a constant field of −100 Oe, we were able to demonstrate direct overwrite, although the readout carrier-to-noise ratio was low (18 dB).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102828
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  • 8
    Electronic Resource
    Electronic Resource
    The Effects of Thickness and Underlayer on Both Grain Growth and Internal Stresses in Cu Thin Films (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 502 (Dec. 2005), p. 417-424 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/11/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.502.417.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Structure and mechanical properties of a Fe90Zr10 amorphous alloy (1984)
    Springer
    Journal of materials science 19 (1984), S. 1917-1929 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The structure of a Fe90Zr10 amorphous alloy was investigated by means of small angle X-ray scattering as well as large-angle diffraction measurements. For as-quenched specimens, SAXS was found to be relatively weak, but spread over a wide scattering angle. After quantitative analysis, it was concluded that a compositional fluctuation occurs on a fine scale of about 0.6 nm. When the specimen was heat treated below the crystallization temperature, the amorphous structure changed to a more stable dual structure consisting of pure iron and a structure similar to Fe3Zr. By prolonged heat treatment, the iron-rich regions crystallized initially from the amorphous state. An apparent correspondence was found to exist between the changes in the amorphous structure and in the mechanical properties. The microscopic phase separation within the amorphous state resulted in an increase of ultimate tensile strength and fracture toughness. The deterioration of mechanical properties was suggested to be attributed to the gradual crystallization of iron-rich regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00550262
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  • 10
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    Structure and mechanical properties of a Fe90Zr10 amorphous alloy (1984)
    Springer
    Details
    Publication Date: 1984-06-01
    Print ISSN: 0022-2461
    Electronic ISSN: 1573-4803
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Springer
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