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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5372-5374 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented on the microstructure and magnetic properties of samples obtained by crystallization of amorphous films of composition Co100−xPx (10〈x〈25). Microstructural studies by means of scanning electron microscopy, x-ray diffractometry, as well as magnetic measurements showed the presence of a well-defined texture in the cobalt crystallites of samples of composition given by x〈21, the easy axis direction of the amorphous samples being preserved during the crystallization. In these samples the thermal dependence of the coercive and anisotropy fields and of the remanence was studied. The crystallization product of samples of composition given by x(approximately-greater-than)21 is characterized by the presence of cobalt crystallites with random easy axes distribution. The polarizing effect of the magnetization was evidenced through the correlation between the two different types of microstructure and the presence or absence of magnetic order during the crystallization of the samples.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1951-1953 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deformation potentials can be determined by measuring the variation of the energy of the electronic transitions with strain. In this work, the hydrostatic and shear potentials of the band-gap electronic transition (E0) and the transitions along the 〈111〉 direction (E1) of GaAs1−xPx, x≈0.20, have been determined by electroreflectance characterization of GaAs1−xPx layers with different levels of strain.
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  • 13
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 5121-5125 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The static bulk properties of several types of binary mixtures of hard spheres interacting through an attractive Yukawa tail are studied by molecular dynamics (MD) simulation, and the results compared with the predictions of the mean spherical approximation (MSA) using the energy, compressibility, and virial routes. For mixtures with components of equal diameter, our MD results differ significantly, under certain working conditions, from recently reported results of Monte Carlo calculations. For both these mixtures and mixtures with appreciable size mismatch, comparison with the MSA results shows that the "exact'' MD data are always more closely approximated by the energy route. These results, which are all consistent with those of a previous study of pure Yukawa fluids, show that, using the energy route, the MSA allows good description of the thermodynamic properties of binary Yukawa mixtures, even in situations departing considerably from ideality.
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  • 14
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 5132-5141 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A very simple ansatz for the partial direct correlation functions of binary mixtures of hard D-dimensional spheres, which allows a unified treatment of both the odd and even space dimensionalities D and reduces, for D=1 and D=3, to the Percus–Yevick theory is presented in this paper. A generalized Carnahan–Starling equation of state is proposed, which is in excellent agreement with the available computer simulation results. Finally, two generalized Verlet–Weis procedures for the partial pair distribution functions gij(r) are proposed. The interesting case of hard disks (D=2) is studied in detail leading to excellent results for the gij(r).
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2297-2299 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Topographic and chemical mapping of materials at high resolution define the goals of a microscope. Force microscopy can provide methods for simultaneous topography and chemical characterization of materials. Here we describe the use of the atomic force microscope to map chemical variations of semiconductor samples. Chemical maps of semiconductor InP/InGaAs alloys have been determined with 3 nm spatial resolution while 10% changes in indium composition are resolved in InxGa1−xAs structures. The present resolution is limited by the tip's curvature radius, cantilever lateral force constant, and the total applied force. Theoretical calculations predict lateral compositional resolutions of about 1 nm. © 1996 American Institute of Physics.
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3327-3332 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the relaxation behavior of compressive InxGa1−xP layers grown by atomic layer molecular-beam epitaxy at Ts=420 °C with x=56%±3% and x=67%±3%. Similar (thickness and composition) InxGa1−xP layers were grown under different growth conditions in order to assess the influence of the stoichiometry of the growth front on the structural properties and the relaxation process of this material system. All InxGa1−xP layers were characterized by double-crystal x-ray diffraction, transmission electron microscopy, and Nomarski interference. Our results show that surface stoichiometry during growth does not affect the relaxation behavior of InxGa1−xP layers but strongly determines their structural characteristics related to composition modulation features which appear in all our InxGa1−xP layers. We have established an empirical relation between residual strain and thickness. This relation makes predictable the residual strain of more complicated structures which can be introduced as buffer layers in lattice-mismatched heteroepitaxial systems. © 1996 American Institute of Physics.
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2595-2597 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results on the optical characterization of InxGa1−xP layers grown by atomic layer molecular beam epitaxy on GaAs (001) substrates at a growth temperature of 420 °C. Our results show that the optical characteristics of these layers, which do not show ordering effects, are strongly dependent on surface stoichiometry during growth. In this way, we can obtain either highly homogeneous alloys with a predictable band-gap energy or layers with optical properties indicative of spatial localization effects, like an anomalous behavior of photoluminescence peak energy with temperature and a large shift between the emission energy and absorption edge. © 1998 American Institute of Physics.
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1805-1807 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the influence of an in-plane (001) strain on the energy position of the long wavelength optical modes of GaAs1−xPx alloys. These alloys have a two mode behavior. We have observed that the strain-induced shift of the Raman peaks corresponding to the GaAs-like vibration is greater than that of the GaP-like vibration. This result shows that the two modes are not affected in the same way by the strain. © 1996 American Institute of Physics.
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  • 19
    Publication Date: 2014-09-16
    Description: In this paper, the physical properties of half-doped manganite La 0.5 Ca 0.5 MnO 3 with crystallite sizes ranging from 15 to 40 nm are investigated. As expected, ferromagnetic order strengthens at expense of antiferromagnetic one as crystallite size is reduced to 15 nm. However, contrary to previously reported works, an enhancement of saturation magnetization is observed as crystallite size increases from 15 to 22 nm. This unexpected behavior is accompanied by an unusual cell volume variation that seems to induce ferromagnetic-like behavior at expense of antiferromagnetic one. Besides, field cooled hysteresis loops show exchange bias field and coercivity enhancement for increasing cooling fields, which suggest a kind of core-shell structure with AFM-FM coupling for crystallite sizes as small as 15 nm. It is expected that inner core orders antiferromagnetically, whereas uncompensated surface spins behave as spin glass with ferromagnetic-like ordering.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 20
    Publication Date: 2016-11-01
    Description: Several static and dynamic properties of bulk liquid Ag at a thermodynamic state near its triple point have been calculated by means of ab initio molecular dynamics simulations. The calculated static structure shows a very good agreement with the available experimental data. The dynamical structure reveals propagating excitations whose dispersion at long wavelengths is compatible with the experimental sound velocity. Results are also reported for other transport coefficients. Additional simulations have also been performed so as to study the structure of the free liquid surface. The calculated longitudinal ionic density profile shows an oscillatory behaviour, whose properties are analyzed through macroscopic and microscopic methods. The intrinsic X-ray reflectivity of the surface is predicted to show a layering peak associated to the interlayer distance.
    Print ISSN: 1070-6631
    Electronic ISSN: 1089-7666
    Topics: Physics
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