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Determination of the deformation potentials of GaAs0.80P0.20 (1994)

González, Y. ; Armelles, G. ; González, L.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 1951-1953

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Deformation potentials can be determined by measuring the variation of the energy of the electronic transitions with strain. In this work, the hydrostatic and shear potentials of the band-gap electronic transition (E0) and the transitions along the 〈111〉 direction (E1) of GaAs1−xPx, x≈0.20, have been determined by electroreflectance characterization of GaAs1−xPx layers with different levels of strain.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.357653

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