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  • 1
    Electronic Resource
    Electronic Resource
    Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2649-2651 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ternary and quaternary semiconductor alloys are usually limited in their band gap engineering by problems related to modulation of composition. In this contribution, we point out the importance of the growth rate in the evolution of a modulation profile in epitaxial films. As a consequence, a diagram of phases for the epitaxial growth is proposed where a window of homogeneous composition is evidenced at low temperatures of growth. The model provides a framework for the epitaxial growth where temperature and growth rate regulation permits the control of the composition modulation in heteroepitaxies. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123926
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  • 2
    Electronic Resource
    Electronic Resource
    Control of phase modulation in InGaAs epilayers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3236-3238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical description of the phase modulation state of epitaxial InGaAs layers has been recently published [D. González et al. Appl. Phys. Lett. 74, 2649 (1999)]. To verify experimentally the deduced phase diagram, InGaAs structures with In compositional steps were grown using different growth conditions. Transmission electron microscopy studies have revealed the modulation state in each layer and have allowed us to define the experimental In composition and temperature dependence of the phase transition. The results show that InGaAs layers with and without composition modulation can be obtained by changing the growth temperature. An excellent agreement with the model predictions is observed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126592
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  • 3
    Electronic Resource
    Electronic Resource
    Strain relaxation behavior of InxGa1−xAs quantum wells on vicinal GaAs (111)B substrates (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1541-1543 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A number of reports have suggested that InGaAs/GaAs (111)B strained layer epitaxy has the prospect of reaching a higher critical layer thickness than that which can be achieved for (001) substrates. This has motivated a study of the relaxation mechanism of InGaAs/GaAs (111)B quantum wells with high In content (0.12〈x〈0.35). Transmission electron microscopy has revealed the existence of a different misfit dislocation (MD) configuration for high In contents (x〉0.25), which, we believe, has not been reported until now. For such compositions, plastic relaxation takes place through a polygonal network of MDs, which have Burgers vectors in the interface plane. The origin of this network is an unusual dislocation source that occurs through the formation of a three-pointed star-shaped configuration. The characteristics of this misfit dislocation network, which has a higher misfit relieving component and a glide plane coincident with the interface plane, imply a reduction of the previous critical layer thickness estimates for high In content InGaAs/GaAs (111)B heterostructures. However, we observe that none of the (111)B samples shows evidence of a transition to a three-dimensional growth mode, which represents a significant advantage compared to the behavior of high In content quantum wells on (001) substrates. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455691
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  • 4
    Electronic Resource
    Electronic Resource
    Relaxation behavior of undoped InxGa1−xP 0.5〈x〈0.7 grown on GaAs by atomic layer molecular-beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3327-3332 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the relaxation behavior of compressive InxGa1−xP layers grown by atomic layer molecular-beam epitaxy at Ts=420 °C with x=56%±3% and x=67%±3%. Similar (thickness and composition) InxGa1−xP layers were grown under different growth conditions in order to assess the influence of the stoichiometry of the growth front on the structural properties and the relaxation process of this material system. All InxGa1−xP layers were characterized by double-crystal x-ray diffraction, transmission electron microscopy, and Nomarski interference. Our results show that surface stoichiometry during growth does not affect the relaxation behavior of InxGa1−xP layers but strongly determines their structural characteristics related to composition modulation features which appear in all our InxGa1−xP layers. We have established an empirical relation between residual strain and thickness. This relation makes predictable the residual strain of more complicated structures which can be introduced as buffer layers in lattice-mismatched heteroepitaxial systems. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363243
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  • 5
    Electronic Resource
    Electronic Resource
    A work-hardening based model of the strain relief in multilayer graded-buffer structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3099-3101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes the modeling of the dislocation distribution and of the strain relief in linearly and step-graded structures, based on work-hardening considerations. The model considers the energy variation in an InGaAs/GaAs system upon introducing a new dislocation into the interfacial fixed array of misfit dislocations. An analytical expression for the strain relaxation in graded-buffer structures is proposed. Transmission electron microscopy observation confirms the model predictions and reveals that the saturation state of relaxation is reached in the buried layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120258
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  • 6
    Electronic Resource
    Electronic Resource
    Work-hardening effects in the lattice relaxation of single layer heterostructures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2475-2477 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modelization of the strain relaxation in single heteroepitaxial layers is presented in this letter. The calculations consider the energetic variations of the heteroepitaxial structure when introducing one new dislocation into the existing interfacial array of fixed misfit dislocations without continuous readjustment of the spacing array. The interaction energy of the new dislocation with both lattice mismatch and dislocation array is shown to be the limiting factor that controls the mechanism of strain relaxation at the saturation stage of relaxation. The model is shown to be in good agreement with the lattice relaxation behavior of previously published strain/thickness data. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120092
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  • 7
    Electronic Resource
    Electronic Resource
    Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1875-1877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using previously published relaxation models [D. J. Dunstan, P. Kidd, L. K. Howard and R. H. Dixon, Appl. Phys. Lett. 59, 3390 (1991) and D. González, D. Araújo, G. Aragón, and R. García, Appl. Phys. Lett. 71, 2475 (1997)] that predict the strain relaxation in the InGaAs/GaAs system, before and during the stage of relaxation saturation, the critical thickness where dislocation interactions begin to limit the plastic relaxation is estimated. The approximations used to deduce an analytical expression are shown to be appropriate for describing the regime of relaxation considered. A good agreement with experimental data previously published by other authors permits a physical explanation for the different observed regimes of relaxation to be given. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121212
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  • 8
    Electronic Resource
    Electronic Resource
    High-resolution electron microscopy study of ALMBE InAs grown on (001) GaAs substrates
    Amsterdam : Elsevier
    Ultramicroscopy 40 (1992), S. 370-375 
    Details
    ISSN: 0304-3991
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-3991(92)90134-6
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  • 9
    Electronic Resource
    Electronic Resource
    Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopy
    Amsterdam : Elsevier
    Journal of Crystal Growth 127 (1993), S. 596-600 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(93)90691-O
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  • 10
    Electronic Resource
    Electronic Resource
    Iron and chromium transport and accumulation in a mangrove ecosystem (1991)
    Springer
    Water, air & soil pollution 57-58 (1991), S. 513-520 
    Details
    ISSN: 1573-2932
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract The export and import of Fe and Cr through a mangrove tidal creek and their further accumulation in bottom sediments were studied in a mangrove forest at the south coast of Rio de Janeiro State, Brazil. The mass balance after 4 tidal cycles showed a mean net accumulation of 891 g of Fe per tidal cycle and of 2.1 g of Cr per tidal cycle. This accumulation was due to the net import of large amounts of suspended material enriched in the two metals. Iron was buried in mangrove sediments as Fe sulfides while Cr burial was probably due to immobilization of refractory Cr-organic compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00282915
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