ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Zen diamond-anvil low-pressure cell (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 4174-4176 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A diamond-anvil cell can be operated with only one anvil in order to generate modest pressures in relatively large volumes. We demonstrate it to pressures up to 2.5 GPa with gaskets of steel, brass, and other metals, with a sample chamber 0.25 mm in diameter by 0.25–0.9 mm depth, and with various pressure media. In this form the cell is very simple to operate and is useful for much work on biological systems and soft solids which requires pressures in the 1 GPa range. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290506
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Theory of the gasket in diamond anvil high-pressure cells (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 3789-3795 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The operation of the gasket in the diamond anvil cell (DAC) is analyzed and some practical conclusions are given, relevant to users of DACs in the submegabar pressure range. Two distinct regimes are found, one where the gasket is at the maximum thickness and the DAC is intrinsically unstable, and the other where the gasket is thin and the cell is stable in operation, so that there are good reasons to use preindented gaskets, of thickness rather less than usually recommended. Force-pressure plots are shown to give valuable information in routine use, and their interpretation is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140442
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Well-width dependence of the excitonic lifetime in strained III-V quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2077-2079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the excitonic lifetime on the well width in InGaAs/InP (unstrained), InGaAs/GaAs, and InGaAsP/InP strained quantum well heterostructures is investigated by time-resolved photoluminescence spectroscopy. We show that the main contribution to the lifetime variation comes from the change of the exciton binding energy. In the strained InGaAs/GaAs wells, the widest wells have a shorter lifetime than expected. We attribute this to the onset of plastic relaxation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351642
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3782-3786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion in InGaAs/GaAs quantum wells has been studied using photoluminescence to follow the development of the diffusion with time in a single sample. Two distinct regimes are seen; a fast initial diffusion and a second steady-state diffusion. The steady-state diffusion was found to be dependent on the depth of the quantum well from the surface and to correlate with published data on the indiffusion of gallium vacancies into gallium arsenide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352884
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Diffusion of ion beam created vacancies and their effect on intermixing: A gambler's ruin approach (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3367-3371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation has frequently been shown to modify the shape of quantum wells following thermal annealing by enhancing the interdiffusion. We have shown that, independent of chemical effects on the interdiffusion, there is a contribution from the vacancies created by the implant. The effects of the diffusion of these vacancies can be modeled using a very simple expression that does not rely on any knowledge of the diffusion coefficients for the vacancies in the material. By comparing the problem to the classic problem of the gambler's ruin, we have shown that implantation into a surface should produce even intermixing of layers at different depths below it, ignoring the effects of vacancy trapping and other depth dependent diffusion processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357462
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Interpretation of double-crystal x-ray rocking curves in relaxed strained-layer structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3011-3015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-crystal x-ray rocking curves from metamorphic epitaxial heterostructures are broadened by the presence of misfit dislocations and this vitiates the usual interpretation of rocking curves using simulation software. However, analysis of the moments of the rocking curve can be useful. Using single layers, we show that the first moment is equivalent to the peak splitting, so that the average strain and average composition of an inhomogeneous layer can be derived from its first moments. The usefulness of the method is demonstrated on complicated heterostructures including graded layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361295
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Optical characterization of thermal mixing in quantum wells and heterostructures using a Green's function model (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7581-7584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a simple Green's function model of interface mixing in quantum wells that provides exact quantitative solutions for real structures. Examples are given of several important low-dimensional heterostructures. The model enables the energy of the band-edge optical transition to be predicted as mixing proceeds, so that optical characterization techniques such as photoluminescence or absorption provide a powerful tool for studying mixing and obtaining interdiffusion constants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347526
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Superstrained superlattices: A processing approach (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 462-463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained layer semiconductor heterostructures produced by molecular-beam epitaxy or metalorganic chemical vapor deposition growth are limited in thickness by relaxation producing dislocations, if a critical thickness tc is exceeded. We propose that, for a given thickness, strain values up to twice as large may be induced by post-growth processing with selective diffusion of the elemental constituents of the heterostructure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343851
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Miniature cryogenic diamond-anvil high-pressure cell (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 627-630 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel diamond-anvil cell is described which measures 19-mm diameter by 28 mm long to fit the Oxford Instruments CF 1204 flow cryostat, while providing full axial and tilt adjustment of the diamonds. The drive mechanism provides for pressure changes while the cell is in the cryostat. The small dimensions are achieved because the drive force is not transmitted through the tilt mechanism, and by the Bowden cable technique used for the drive mechanism. This cell makes high pressure a readily portable technique that can be brought to many already existing experimental apparatuses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139846
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Soldering diamonds into the diamond anvil cell (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1660-1661 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Diamonds can be obtained with a metal coating suitable for soldering to metal components. This provides a satisfactory method for mounting the anvils in diamond anvil high-pressure cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142453
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...