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  • 1975-1979  (14)
  • 1
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    Annealing kinetics of electron‐irradiated GaAs heteroface solar cells in the range 175–200 °C (1979)
    American Institute of Physics
    Details
    Publikationsdatum: 1979-09-15
    Print ISSN: 0003-6951
    Digitale ISSN: 1077-3118
    Thema: Physik
    Publiziert von American Institute of Physics
    Standort Signatur Erwartet Verfügbarkeit
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    AKTUELLE ARTIKEL
  • 2
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    Optical absorption components of light−modulated absorption spectrum of CdS (1975)
    American Institute of Physics
    Details
    Publikationsdatum: 1975-02-01
    Print ISSN: 0021-8979
    Digitale ISSN: 1089-7550
    Thema: Physik
    Publiziert von American Institute of Physics
    Standort Signatur Erwartet Verfügbarkeit
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    AKTUELLE ARTIKEL
  • 3
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    High efficiency GaAs solar cells (1977)
    In:  CASI
    Details
    Publikationsdatum: 2006-05-24
    Beschreibung: The present status of the GaAlAs/GaAs heteroface solar cell program is reported. Studies have been concentrated on GaAlAs/GaAs heteroface solar cells; however, some research has been conducted on thin junction, diffused GaAs solar cells. Emphasis has been on obtaining high efficiency (18% to 20%) GaAs solar cells. Two problems that have limited the efficiency of GaAs solar cells are the high recombination velocity of carriers near the surface and the low minority carrier diffusion length in n-GaAs.
    Schlagwort(e): ENERGY PRODUCTION AND CONVERSION
    Materialart: Solar Cell High Efficiency and Radiation Damage; p 133-138
    Format: text
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    NASA TECHNICAL REPORTS
  • 4
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    Optical absorption components of light-modulated absorption spectrum of CdS (1975)
    In:  Other Sources
    Details
    Publikationsdatum: 2011-08-16
    Beschreibung: The amplitude and decay coefficient of light-induced modulation of absorption (LIMA) was measured as a function of wavelength from 535 to 850 nm for single-crystal CdS. The decay coefficient exhibited a discontinuous resonance at 710 nm which was due to the overlap and cancellation of two opposing absorption changes. A method was developed to separate these opposing absorption changes using the measured decay coefficients. The discrete-level-to-band energy for one absorption change was found to be 1.64 eV. An improved model was developed which contains two associated levels in the band gap separated by 0.32 eV.
    Schlagwort(e): OPTICS
    Materialart: Journal of Applied Physics; 46; Feb. 197
    Format: text
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  • 5
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    Rise kinetics of light-induced modulation of absorption for a CdS crystal (1976)
    In:  Other Sources
    Details
    Publikationsdatum: 2011-08-17
    Beschreibung: An experimental study has been made of the rise kinetics for changes in optical absorption in a single crystal of CdS which was bulk excited by pulsed laser light. The experimental data were compared to calculations from a simple model involving a bimolecular process. Experimental and calculated values agreed to within the experimental error and confirmed that light-induced modulation of absorption is a bimolecular process.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: Journal of Applied Physics; 47; Nov. 197
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
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    Recovery of shallow junction GaAs solar cells damaged by electron irradiation (1978)
    In:  Other Sources
    Details
    Publikationsdatum: 2011-08-17
    Beschreibung: Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.
    Schlagwort(e): ENERGY PRODUCTION AND CONVERSION
    Materialart: Electrochemical Society; vol. 125
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
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    Annealing of GaAs solar cells damaged by electron irradiation (1978)
    In:  Other Sources
    Details
    Publikationsdatum: 2011-08-17
    Beschreibung: Measurements of thermal annealing of GaAlAs/GaAs solar cells damaged by 1 MeV electron irradiation are reported, and the magnitude of the short-circuit current recovery is discussed. The damaged cells are annealed in a vacuum at 200 C. A cell irradiated at 10 to the 13th power electrons per sq cm recovers all its lost short-circuit current after 15 hours of annealing. Possible application of the annealing process to solar cells in space is also considered.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: Electrochemical Society; vol. 125
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
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    Annealing kinetics of electron-irradiated GaAs heteroface solar cells in the range 175-200 C (1979)
    In:  Other Sources
    Details
    Publikationsdatum: 2011-08-17
    Beschreibung: Annealing of electron-irradiation damage in GaAs solar cells is important for space applications. This paper describes studies conducted to understand this annealing process. GaAs heteroface solar cells were irradiated with 10 to the 15th 1-MeV electrons/sq cm followed by thermal annealing. An activation energy for annealing of 1.25 + or - 0.14 eV and a frequency factor of (3.7 + or - 1.9) x 10 to the 9th per sec were determined. A small component of the irradiation damage which does not anneal measurably at 200 C was observed.
    Schlagwort(e): SPACECRAFT PROPULSION AND POWER
    Materialart: Applied Physics Letters; 35; Sept. 15
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
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    Langley program of GaAs solar cells (1979)
    In:  CASI
    Details
    Publikationsdatum: 2016-06-07
    Beschreibung: A brief overview of the development of GaAs solar cell technology is provided. An 18 to 20 percent AMO efficiency, stability under radiation and elevated-temperature operation, and high power-to-weight ratio are among the factors studied. Cell cost and availability are also examined.
    Schlagwort(e): ENERGY PRODUCTION AND CONVERSION
    Materialart: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage, 1979; p 13-14
    Format: application/pdf
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
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    Radiation damage in GaAs solar cells (1979)
    In:  CASI
    Details
    Publikationsdatum: 2016-06-07
    Beschreibung: Recent results of electron and proton irradiation and annealing of GaAs solar cells are presented along with some implications of these results. A comparison between the energy-levels produced by protons and by electrons which are not stopped in the material indicate that the damage produced by protons and electrons may be qualitatively different. Thus, annealing of proton damage may be very different from the annealing of electron damage.
    Schlagwort(e): ENERGY PRODUCTION AND CONVERSION
    Materialart: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage, 1979; p 201-207
    Format: application/pdf
    Standort Signatur Erwartet Verfügbarkeit
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