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  • Other Sources  (12)
  • 1975-1979  (12)
  • 1
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    High efficiency GaAs solar cells (1977)
    In:  CASI
    Details
    Publication Date: 2006-05-24
    Description: The present status of the GaAlAs/GaAs heteroface solar cell program is reported. Studies have been concentrated on GaAlAs/GaAs heteroface solar cells; however, some research has been conducted on thin junction, diffused GaAs solar cells. Emphasis has been on obtaining high efficiency (18% to 20%) GaAs solar cells. Two problems that have limited the efficiency of GaAs solar cells are the high recombination velocity of carriers near the surface and the low minority carrier diffusion length in n-GaAs.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Solar Cell High Efficiency and Radiation Damage; p 133-138
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  • 2
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    Optical absorption components of light-modulated absorption spectrum of CdS (1975)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Description: The amplitude and decay coefficient of light-induced modulation of absorption (LIMA) was measured as a function of wavelength from 535 to 850 nm for single-crystal CdS. The decay coefficient exhibited a discontinuous resonance at 710 nm which was due to the overlap and cancellation of two opposing absorption changes. A method was developed to separate these opposing absorption changes using the measured decay coefficients. The discrete-level-to-band energy for one absorption change was found to be 1.64 eV. An improved model was developed which contains two associated levels in the band gap separated by 0.32 eV.
    Keywords: OPTICS
    Type: Journal of Applied Physics; 46; Feb. 197
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  • 3
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    Rise kinetics of light-induced modulation of absorption for a CdS crystal (1976)
    In:  Other Sources
    Details
    Publication Date: 2011-08-17
    Description: An experimental study has been made of the rise kinetics for changes in optical absorption in a single crystal of CdS which was bulk excited by pulsed laser light. The experimental data were compared to calculations from a simple model involving a bimolecular process. Experimental and calculated values agreed to within the experimental error and confirmed that light-induced modulation of absorption is a bimolecular process.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics; 47; Nov. 197
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  • 4
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    Recovery of shallow junction GaAs solar cells damaged by electron irradiation (1978)
    In:  Other Sources
    Details
    Publication Date: 2011-08-17
    Description: Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Electrochemical Society; vol. 125
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  • 5
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    Annealing of GaAs solar cells damaged by electron irradiation (1978)
    In:  Other Sources
    Details
    Publication Date: 2011-08-17
    Description: Measurements of thermal annealing of GaAlAs/GaAs solar cells damaged by 1 MeV electron irradiation are reported, and the magnitude of the short-circuit current recovery is discussed. The damaged cells are annealed in a vacuum at 200 C. A cell irradiated at 10 to the 13th power electrons per sq cm recovers all its lost short-circuit current after 15 hours of annealing. Possible application of the annealing process to solar cells in space is also considered.
    Keywords: SOLID-STATE PHYSICS
    Type: Electrochemical Society; vol. 125
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  • 6
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    Annealing kinetics of electron-irradiated GaAs heteroface solar cells in the range 175-200 C (1979)
    In:  Other Sources
    Details
    Publication Date: 2011-08-17
    Description: Annealing of electron-irradiation damage in GaAs solar cells is important for space applications. This paper describes studies conducted to understand this annealing process. GaAs heteroface solar cells were irradiated with 10 to the 15th 1-MeV electrons/sq cm followed by thermal annealing. An activation energy for annealing of 1.25 + or - 0.14 eV and a frequency factor of (3.7 + or - 1.9) x 10 to the 9th per sec were determined. A small component of the irradiation damage which does not anneal measurably at 200 C was observed.
    Keywords: SPACECRAFT PROPULSION AND POWER
    Type: Applied Physics Letters; 35; Sept. 15
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  • 7
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    Langley program of GaAs solar cells (1979)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: A brief overview of the development of GaAs solar cell technology is provided. An 18 to 20 percent AMO efficiency, stability under radiation and elevated-temperature operation, and high power-to-weight ratio are among the factors studied. Cell cost and availability are also examined.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage, 1979; p 13-14
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  • 8
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    Radiation damage in GaAs solar cells (1979)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: Recent results of electron and proton irradiation and annealing of GaAs solar cells are presented along with some implications of these results. A comparison between the energy-levels produced by protons and by electrons which are not stopped in the material indicate that the damage produced by protons and electrons may be qualitatively different. Thus, annealing of proton damage may be very different from the annealing of electron damage.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage, 1979; p 201-207
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  • 9
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    Simplified ozone detection by chemiluminescence (1977)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Ozone is detected by film coated with solid, such as rubrene, that reacts with ozone to degree proportional to concentration in sample gas. Gas flow is stopped, and film is heated to produce light (chemiluminescence) in proportion to amount of reacted material on sensor.
    Keywords: MATERIALS
    Type: LAR-11405 , NASA Tech Briefs (ISSN 0145-319X); 2; 3; P. 3
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  • 10
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    Method for detecting pollutants (1976)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: A method is described for detecting and measuring trace amounts of pollutants of the group consisting of ozone, nitrogen dioxide, and carbon monoxide in a gaseous environment. A sample organic solid material that will undergo a chemical reaction with the test pollutant is exposed to the test environment and thereafter, when heated in the temperature range of 100-200 C., undergoes chemiluminescence that is measured and recorded as a function of concentration of the test pollutant. The chemiluminescence of the solid organic material is specific to the pollutant being tested.
    Keywords: ENVIRONMENT POLLUTION
    Format: application/pdf
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