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    Annealing of GaAs solar cells damaged by electron irradiation (1978)
    In:  Other Sources
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    Publication Date: 2011-08-17
    Description: Measurements of thermal annealing of GaAlAs/GaAs solar cells damaged by 1 MeV electron irradiation are reported, and the magnitude of the short-circuit current recovery is discussed. The damaged cells are annealed in a vacuum at 200 C. A cell irradiated at 10 to the 13th power electrons per sq cm recovers all its lost short-circuit current after 15 hours of annealing. Possible application of the annealing process to solar cells in space is also considered.
    Keywords: SOLID-STATE PHYSICS
    Type: Electrochemical Society; vol. 125
    Format: text
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