ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (6,963)
Collection
Source
Keywords
Publisher
Years
Journal
Topic
  • 1
    Electronic Resource
    Electronic Resource
    Entrapment of Polypyrrole Chains between MoS2 Layers via an in Situ Oxidative Polymerization Encapsulation Reaction (1995)
    s.l. : American Chemical Society
    Chemistry of materials 7 (1995), S. 1753-1755 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00058a001
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Bonding of Aluminum Alloy by Hot-Dipping Tin Coating (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 32 (Feb. 2008), p. 93-98 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper presents bonding technology of aluminum alloy by hot-dipping tin. Thedissolution curve of copper in molten tin liquid was obtained in the experiment of hot-dipping Sn.Optimal hot-dipping parameter which was suitable for soldering was designed. To elucidatecharacteristics of interfacial evolution, the microstructure of the coatings, soldered joint wereanalyzed using optical microscopy, SEM and EDX. The shear strength of soldered joints was testedas high as 39.9Mpa, which is high enough to achieve the requirement of electronic industry
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.32.93.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 131-133 (Oct. 2007), p. 393-398 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The thermal donor formation at 425oC - 450oC in Ge doped Czochralski (GCZ) siliconhaving about 1016 cm-3 Ge content pretreated by rapid thermal annealing (RTA) and conventionalfurnace annealing (CFA) has been investigated using low-temperature infrared spectroscopy(LT-IR). The measurements prove that lightly Ge doping can enhance the formation of thermaldouble donors in the initial stage of the low temperature annealing after RTA process. Ge inducedadditional grown-in oxygen precipitates during silicon ingot growth and the abundantself-interstitials during RTA may be the reason for the enhancement. However, after extending theannealing time at the low temperatures, the thermal donor concentration in the GCZ silicon is lowerthan that in the conventional CZ silicon. In final, the mechanism is also discussed
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.393.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 191-194 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed toget high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001)4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500°C with apressure of 40 Torr by using SiH4+C2H4+H2 gas system. The surface morphologies and structuraland optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope,atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperaturephotoluminescence (LTPL). The background doping of 32 μm-thick sample has been reduced to2-5×1015 cm-3. The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped4H-SiC epilayers are obtained by in-situ doping of NH3 and B2H6, respectively. Schottky barrierdiodes with reverse blocking voltage of over 1000 V are achieved preliminarily
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.191.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    〈i〉In Situ〈/i〉 Boron and Aluminum Doping and Their Memory Effectsin 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 147-150 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52×1020 cm-3 with Hall mobility of about 1 cm2/Vs and resistivity of 1.6~2.2×10-2 Wcm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Wcm for resistivity, 5.3×1018 cm-3 for hole carrier concentration, and 7 cm2/Vs for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.147.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 109-112 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Homoepitaxial growth of 4H-SiC p+/π/n- multi-epilayer on n+ substrate and in-situ dopingof p+ and π-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H2. The surfacemorphologies, homogeneities and doping concentrations of the n--single-epilayers and the p+/π/n-multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM andRaman investigation showed that both single- and multi-epilayers have good surface morphologiesand homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least100 times higher than that in π layer. The UV photodetectors fabricated on 4H-SiC p+/π/n-multi-epilayers showed low dark current and high detectivity in the UV range
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.109.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Heavily Doped Polycrystalline 3C-SiC Growth on SiO〈sub〉2〈/sub〉/Si (100) Substrates for Resonator Applications (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 179-182 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: 3C-SiC is a promising material for the development of microelectromechanical systems(MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavilynitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 μm-thick silicon dioxide (SiO2)films for resonator applications. The growth has been performed via chemical vapor depositionusing SiH4 and C2H4 precursor gases with carrier gas of H2 in a newly developed vertical CVDchamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electronmicroscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondaryion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown thatthere is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-typeconduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about0.56 [removed info]⋅cm, 54 cm2/Vs, and 2.0×1017 cm-3, respectively. The heavily nitrogen doped polycrystalline3C-SiC with the resisitivity of less than 10-3 [removed info]⋅cm was obtained by in-situ doping. PolycrystallineSiC resonators have been fabricated preliminarily on these heavily doped SiC films with thicknessof about 2 μm. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.179.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Semi-Enclosed Cold Forging Process Analysis and Progressive Die Design of CPU Fin (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 575-578 (Apr. 2008), p. 174-179 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper analyzes the forming process methods of fin used in CPU chip to emit heat.The whole process is blanking, the first forging forming, the second forging (sizing), and trimming.The chamfer design of CPU fin blank is simulated by finite element analysis. The optimizedchamfer 1.6 mm is available. Semi-enclosed cold forging of progressive dies is put forward. Thenewly designed transfer unit is applied, which unifies the merit of high efficiency of the progressivedies and the high material-using ratio of the project die. Quick disassembly structure is designedand pins are used as quick disassembly pins by means of ball bearing bushing. The uniqueprocessing of the shearing scrap structure is adopted when designing the inverted trimming dies.Compared with the traditional die, the mechanization and electrization are realized to increase theproduction efficiency and get highly precise CPU fin
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.575-578.174.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Finite Element Analysis of Optimum Back Pressure during Equal Channel Angular Pressing (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 575-578 (Apr. 2008), p. 311-315 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Equal channel angular pressing (ECAP) is one of the most promising processes tofabricate ultra-fine grained materials. The material deformation is affected by die geometry, materialbehavior, friction and back pressure. The optimum back pressure for 1100Al during ECAP wasstudied. The effect of back pressure on deformation behavior, effective strain and deformation loadwere analyzed by using finite element software. The results show that the corner gap between thebillet and the die in the external part of the deformation zone decreases and even disappears withthe increase of back pressure, which can produce more uniform and larger strain in the billet. Thedeformation load enhances with the increase of back pressure. From the simulation results, it can befound out that the optimum back pressure for 1100Al pressed in the die of Φ=90° is about 30MPa
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.575-578.311.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Characterization of the Escherichia coli O59 and O155 O-antigen gene clusters: The atypical wzx genes are evolutionary related (2005)
    Oxford, UK : Blackwell Publishing Ltd
    FEMS microbiology letters 248 (2005), S. 0 
    Details
    ISSN: 1574-6968
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: O-antigens are highly polymorphic. The genes specifically involved in O-antigen synthesis are generally grouped together on the chromosome as a gene cluster. In Escherichia coli, the O-antigen gene clusters are characteristically located between the housekeeping genes galF and gnd. In this study, the O-antigen gene clusters of E. coli O59 and E. coli O155 were sequenced. The former was found to contain genes for GDP-mannose synthesis, glycosyltransferase genes and the O-antigen polymerase gene (wzy), while the latter contained only glycosyltransferase genes and wzy. O unit flippase genes (wzx) were found immediately downstream of the gnd gene, in the region between the gnd and hisI genes in these two strains. This atypical location of wzx has not been reported before, and furthermore these two genes complemented in trans despite the fact that different O-antigen structures are present in E. coli O59 and O155. A putative acetyltransferase gene was found downstream of wzx in both strains. Comparison of the region between gnd and hisI revealed that the wzx and acetyltransferase genes are closely related between E. coli O59 and O155, indicating that the two gene clusters arose recently from a common ancestor. This work provides further evidence for the O-antigen gene cluster having formed gradually, and selection pressure will eventually bring O-antigen genes into a single cluster. Genes specific for E. coli O59 and O155, respectively, were also identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/j.femsle.2005.05.036
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...