ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Three types of defects, namely defect I, defect II, defect III, in the 4H-SiC homoepilayerwere investigated by micro-raman scattering measurement. These defects all originate from a certaincore and are composed of (I) a wavy tail region, (II) two long tails, the so called comet and (III) threeplaits. It was found that there are 3C-SiC inclusions in the cores of defect II and defect III and theshape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shapedinclusion, the defect III would be formed; otherwise, the defect II was formed. No inclusion wasobserved in the core of the defect I. The mechanisms of these defects are discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.387.pdf
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