ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed toget high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001)4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500°C with apressure of 40 Torr by using SiH4+C2H4+H2 gas system. The surface morphologies and structuraland optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope,atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperaturephotoluminescence (LTPL). The background doping of 32 μm-thick sample has been reduced to2-5×1015 cm-3. The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped4H-SiC epilayers are obtained by in-situ doping of NH3 and B2H6, respectively. Schottky barrierdiodes with reverse blocking voltage of over 1000 V are achieved preliminarily
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.191.pdf