Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 131-133 (Oct. 2007), p. 625-628
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The ZnO/n+-Si heterojunction has been fabricated via depositing nominally undoped ZnOfilm by reactive sputtering on a heavily arsenic-doped (n+) silicon substrate. The sputtered ZnO filmwas n-type in conductivity with an electron concentration of 1.0×1018 cm-3. The current-voltagecharacteristics indicate that the ZnO/n+-Si heterojunction does not possess rectifying function. Underthe forward bias with the negative voltage applied on the n+-Si substrate, the heterojunction emitsultraviolet and broad visible lights characteristics of near-band-edge and defect-related emissions ofZnO, respectively. The EL mechanism has been tentatively explained in terms of the energy-banddiagram
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.625.pdf
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