ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
3C-SiC is a promising material for the development of microelectromechanical systems(MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavilynitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 μm-thick silicon dioxide (SiO2)films for resonator applications. The growth has been performed via chemical vapor depositionusing SiH4 and C2H4 precursor gases with carrier gas of H2 in a newly developed vertical CVDchamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electronmicroscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondaryion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown thatthere is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-typeconduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about0.56 [removed info]⋅cm, 54 cm2/Vs, and 2.0×1017 cm-3, respectively. The heavily nitrogen doped polycrystalline3C-SiC with the resisitivity of less than 10-3 [removed info]⋅cm was obtained by in-situ doping. PolycrystallineSiC resonators have been fabricated preliminarily on these heavily doped SiC films with thicknessof about 2 μm. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.179.pdf
