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  • Springer  (67)
  • American Institute of Physics (AIP)  (8)
  • Blackwell Publishing Ltd  (8)
  • EMBO Press
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  • 1
    Electronic Resource
    Electronic Resource
    Observation of slip dislocations in (100) silicon wafers after BF2 ion implantation and rapid thermal annealing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 800-802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of slip dislocations in BF2 ion-implanted, 100-mm-diam silicon wafers during rapid thermal annealing is investigated. Whole wafer x-ray topography shows that annealing at 1150 °C causes slip to initiate randomly at positions of maximum resolved stress at the wafer edges and over scribe marks made on the back surface prior to annealing. Lowering the annealing temperature by 20 °C, which corresponds to decreasing the silicon yield stress by less than 106 dyn cm−2, prevents slip from occurring and allows sufficient removal of implantation-induced defects from which junction diodes with good current-voltage characteristics are fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337377
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  • 2
    Electronic Resource
    Electronic Resource
    Etching of SiO2 in an electron cyclotron resonance argon plasma (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1311-1313 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etching of SiO2 with low-energy Ar ions has been studied in an electron cyclotron resonance (ECR) based etching system. Ion energies were controlled by a capacitively coupled 13.56 MHz bias of the substrate. Etch rates of over 100 A(ring)/min have been achieved at ion energies below 100 V. The variation in etch rate has been studied as a function of ECR power, self-induced bias, and position of the wafer relative to the ECR source. This low-energy process can be utilized for cleaning of semiconductor surfaces prior to chemical vapor deposition or metallization processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103198
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  • 3
    Electronic Resource
    Electronic Resource
    Reactive ion etch process with highly controllable GaAs-to-AlGaAs selectivity using SF6 and SiCl4 (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1083-1085 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a reactive ion etch process with high selectivity for etching GaAs layers and stopping on underlying AlGaAs layers is reported. A key feature is the high degree of control that can be maintained over the GaAs-to-AlGaAs selectivity by changing the SF6/SiCl4 ratio while keeping other etch parameters such as pressure, dc bias, or power constant. Values of the GaAs-to-AlGaAs selectivity can be varied from 1 to 500. Diluent gases such as helium can be added to reduce the etch rate, which is important to avoid damage to sensitive device structures and to the overhang profile of resist materials used for liftoff metallization. The application of this etch process for high electron mobility transistor fabrication is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98747
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  • 4
    Electronic Resource
    Electronic Resource
    Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devices (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2225-2226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching is important for III-V device fabrication. Commonly encountered applications include the need to remove an epitaxial layer selectively from underlying layers and the need for definition of mesas and other structures with carefully controlled dimensions. We present results showing the use of very thin Al0.9Ga0.1As and In0.2Ga0.8As stop-etch layers, which when used in conjunction with a particular etch chemistry can provide highly selective removal of epitaxial layers in GaAs-based III-V compound semiconductors. In addition, we report the selective removal of an Al0.3Ga0.7As layer from underlying GaAs by the use of a thin In0.2Ga0.8As interlayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98947
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  • 5
    Electronic Resource
    Electronic Resource
    Piezoelectric field effects in InGaAs (111)B quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1393-1395 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained In0.21Ga0.79As/GaAs quantum well structures have been grown by molecular beam epitaxy on (111)B GaAs substrates. Well widths between 20 and 160 A(ring), separated by 500 A(ring) barriers were grown sequentially on the same substrate and subsequently characterized by low-temperature (10 K) photoluminescence. The variation of the e-hh transition energy with well width is markedly different for samples grown simultaneously on (100) and (111)B substrates due to the strain induced piezoelectric field. Using the envelope function approximation, the dependence of n=1 e-hh transitions of (111)B samples on well width can be interpreted by the presence of a built-in electric field of magnitude of 1.45×107 V/m. In contrast to the (100) sample, exciton lifetimes in the (111)B sample depend strongly on well width because of spatial separation of electrons and holes in the triangular wells. In the 160 A(ring) well, the exciton lifetime increases to 755 ns corresponding to a reduction of about three orders of magnitude in the electron-hole wave function overlap integral. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115544
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  • 6
    Electronic Resource
    Electronic Resource
    Electron cyclotron resonance plasma-enhanced filament-assisted diamond growth (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1444-1446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique was developed to grow high-purity polycrystalline diamond films at 850 °C and 50 mTorr with 10% CH4, 2% O2, and balance H2 using a filament-assisted chemical vapor deposition technique in combination with an electron cyclotron resonance (ECR) plasma. Using Raman spectroscopy and in situ plasma diagnostics, we have shown that the hydrogen plasma selectively etched nondiamond components during deposition. Experiments with ECR plasma and the filament-assisted technique from 10−6 Torr to 50 mTorr and 500–1000 °C indicated that low-energy electrons are a key factor in growth of diamond thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107265
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  • 7
    Electronic Resource
    Electronic Resource
    OCCUPATIONAL STRESS IN FEMALE MANAGERS: A COMPARATIVE STUDY (1984)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of management studies 21 (1984), S. 0 
    Details
    ISSN: 1467-6486
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1467-6486.1984.tb00231.x
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  • 8
    Electronic Resource
    Electronic Resource
    CONTROL OF STREAMBANK EROSION DUE TO BED DEGRADATION WITH VEGETATION AND STRUCTURE (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 31 (1995), S. 0 
    Details
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: : Combinations of vegetation and structure were applied to control streambank erosion along incised stream channels in northwest Mississippi. Eleven sites along seven channels with contributing drainage areas ranging from 12–300 km2 were used for testing. Tested configurations included eroding banks protected by vegetation alone, vegetation with structural toe protection, vegetation planted on re-graded banks, and vegetation planted on regraded banks with toe protection. Monitoring continued for up to 10 years, and casual observation for up to 18 years. Sixteen woody and 13 nonwoody species were tested. Native woody species, particularly willow, appear to be best adapted to stream-bank environments. Sericea lespedeza and Alamo switchgrass were the best nonwoody species tested. Vegetation succeeded in reaches where the bed was not degrading, competition from kudzu was absent, and bank slopes were stabilized by grading or toe protection. Natural vegetation invaded planted and unplanted stable banks composed of fertile soils. Designs involving riprap toe protection in the form of a longitudinal dike and woody vegetation appeared to be most cost-effective. The exotic vine kudzu presents perhaps the greatest long-term obstacle to restoring stable, functional riparian zones along incised channels in our region. (KEY TERMS: vegetation; streambank protection; bioengineering; stream restoration; channel incision; riparian zone.)
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1752-1688.1995.tb04035.x
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  • 9
    Electronic Resource
    Electronic Resource
    ADDITION OF SPURS TO STONE TOE PROTECTION FOR WARMWATER FISH HABITAT REHABILITATION (1998)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 34 (1998), S. 0 
    Details
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: : Longitudinal stone toe is one of the most reliable and economically attractive approaches for stabilizing eroding banks in incised channels. However, aquatic habitat provided by stone toe is inferior to that provided by spur dikes. In order to test a design that combined features of stone toe and spurs, eleven stone spurs were placed perpendicular to 170 m of existing stone toe in Goodwin Creek, Mississippi, and willow posts were planted in the sandbar on the opposite bank. Response was evaluated by monitoring fish and habitats in the treated reach and an adjacent comparison reach (willow post planting and standard toe without spurs) for four years. Furthermore, physical habitats within the treated reach were compared with seven reaches protected with standard toe on a single date three years after construction. Overall results indicated that spur addition resulted in modest increases in baseflow stony bankline, water width and pool habitat availability, but had only local effects on depth. These relatively small changes in physical habitat were exaggerated seasonally by beaver dams that appeared during periods of prolonged low flow in late Summer and Autumn. Physical changes were accompanied by shifts in fish species composition away from a run-dwelling assemblage dominated by large numbers of cyprinids and immature centrarchids toward an assemblage containing fewer and larger centrarchids. Biological responses were at least partially due to the effects of temporary beaver dams.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1752-1688.1998.tb05442.x
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  • 10
    Electronic Resource
    Electronic Resource
    SURGICAL ADHESIVES (1968)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 146 (1968), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1968.tb20284.x
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