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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Four-wave mixing of strong picosecond optical pulses in passive semiconductor waveguides" [Appl. Phys. Lett. 74, 2105 (1999)] (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3720-3720 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125393
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  • 2
    Electronic Resource
    Electronic Resource
    Four-wave mixing of strong picosecond optical pulses in passive semiconductor waveguides (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2105-2107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Four-wave mixing (FWM) of strong picosecond optical pulses in passive semiconductor waveguides is investigated numerically, taking into account two-photon absorption (TPA), ultrafast nonlinear refraction, probe depletion, and cross-gain modulation, as well as interband and intraband carrier processes. Simulations show good agreement with published experimental measurements, and indicate that interband and intraband nonlinear mixing and TPA-induced pulse reshaping play significant roles in determining conjugate pulse behaviors for strong pulse energy cases. In particular, for increased pulse energy, an increase in FWM conversion efficiency is predicted, and an optimum pulse width is identified. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123770
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  • 3
    Electronic Resource
    Electronic Resource
    Amplification of picosecond optical pulses in midinfrared intersubband semiconductor optical amplifiers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2449-2451 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive theoretical model describing the amplification of picosecond optical pulses in midinfrared intersubband semiconductor optical amplifiers is developed, taking into account gain dispersion, short carrier relaxation time and ultrafast nonlinear refraction. It is shown that these factors are extremely important in determining the amplified optical pulse characteristics in both the time and frequency domains. The calculations also indicate that gain dispersion can be significantly enhanced by fast carrier relaxations, short pulse widths, and high pulse energies. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318932
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  • 4
    Electronic Resource
    Electronic Resource
    Efficient polarization insensitive four-wave mixing using a semiconductor optical amplifier and one pump source in an optical loop (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2710-2712 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An improved scheme for polarization insensitive four-wave mixing in semiconductor optical amplifiers (SOAs) is proposed, utilizing just one polarization insensitive SOA and one input pump wave, and without compromising the achievable conjugate power compared with that obtained from a conventional dual-pump co-propagating configuration. For frequency detuning larger than ∼300 GHz for a device length of say 500 μm, polarization sensitivity less than ∼0.8 dB can be obtained. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125124
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  • 5
    Electronic Resource
    Electronic Resource
    Wavelength switching by positively detuned side-mode injection in semiconductor lasers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3170-3172 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimental observation of a side-mode resonance regime in intermodal injection of a Fabry–Pérot semiconductor laser is reported. It is shown that wavelength switching can be easily affected by the use of positively detuned side-mode injection. Nearly degenerate four-wave mixing is observed in both positive and negative detuning regimes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126619
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  • 6
    Electronic Resource
    Electronic Resource
    Carrier transport and intersubband population inversion in coupled quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1089-1091 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We theoretically study the possibility of achieving intersubband population inversion in coupled GaAs quantum wells, taking into account the relevant physical mechanisms of resonant tunneling and intersubband emission-absorption processes. Two coupled quantum well structures having intersubband resonant wavelengths of 10 and 60 μm are considered. We find that, in the case of an operating wavelength of 60 μm, intersubband population inversion is achievable at acceptable injection current densities even for room-temperature operation. However, achievement of intersubband population inversion is significantly more difficult at the shorter wavelength. The temperature and carrier transit time dependence of intersubband population inversion are also calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109815
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  • 7
    Electronic Resource
    Electronic Resource
    Piezoelectric field effects in InGaAs (111)B quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1393-1395 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained In0.21Ga0.79As/GaAs quantum well structures have been grown by molecular beam epitaxy on (111)B GaAs substrates. Well widths between 20 and 160 A(ring), separated by 500 A(ring) barriers were grown sequentially on the same substrate and subsequently characterized by low-temperature (10 K) photoluminescence. The variation of the e-hh transition energy with well width is markedly different for samples grown simultaneously on (100) and (111)B substrates due to the strain induced piezoelectric field. Using the envelope function approximation, the dependence of n=1 e-hh transitions of (111)B samples on well width can be interpreted by the presence of a built-in electric field of magnitude of 1.45×107 V/m. In contrast to the (100) sample, exciton lifetimes in the (111)B sample depend strongly on well width because of spatial separation of electrons and holes in the triangular wells. In the 160 A(ring) well, the exciton lifetime increases to 755 ns corresponding to a reduction of about three orders of magnitude in the electron-hole wave function overlap integral. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115544
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  • 8
    Electronic Resource
    Electronic Resource
    Control of surface-emitting laser diodes by modulating the distributed Bragg mirror reflectivity: Small-signal analysis (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2460-2462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cavity-loss control of surface emitting distributed Bragg reflector lasers by electro-optic modulation of the Bragg mirror reflectivity is shown to be more efficient at high frequencies than the conventional control by current modulation. Combining both means of control offers additional possibilities, such as the elimination of relaxation oscillations and the achievement of a pure frequency-modulation regime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110475
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  • 9
    Electronic Resource
    Electronic Resource
    The effects of carrier degeneracy on transport properties of the double heterostructure injection laser (1976)
    Springer
    Applied physics 9 (1976), S. 161-164 
    Details
    ISSN: 1432-0630
    Keywords: Semiconductor lasers ; Heterojunction theory ; I–V characteristics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It is shown that carrier degeneracy plays an important role in determining the electrical properties of double heterostructure injection lasers. Correct statistical treatment of the charge cariers in the device leads to a generalised Einstein relation between the carrier transport coefficients. Such a relation (for both electrons and holes) is used in numerical solutions of semiconductor transport equations applicable to the laser. Experimentally observed I–V characteristics of the laser are explained in terms of carrier degeneracy effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00903953
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  • 10
    Electronic Resource
    Electronic Resource
    Semiconductor laser bistable operation with an adjustable trigger (1982)
    Springer
    Optical and quantum electronics 14 (1982), S. 321-326 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Hysteresis is demonstrated in the light output versus current characteristics of twin-stripe injection lasers subject to optical injection. The sensitivity of the device to optical injection is adjustable and allows an adjustable switch for bistable operation to be defined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619743
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