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  • 1
    Electronic Resource
    Electronic Resource
    Induced base transistor
    Amsterdam : Elsevier
    Physica B+C 134 (1985), S. 456-469 
    Details
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-4363(85)90388-2
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  • 2
    Electronic Resource
    Electronic Resource
    Hot-electron transport in heterostructure devices
    Amsterdam : Elsevier
    Physica B+C 134 (1985), S. 453-465 
    Details
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-4363(85)90387-0
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  • 3
    Electronic Resource
    Electronic Resource
    Collector-up light-emitting charge injection transistors in n-InGaAs/InAlAs/p-InGaAs and n-InGaAs/InP/p-InGaAs heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8618-8627 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The realization of collector-up light-emitting complementary charge injection transistors is reported. The devices have been implemented in molecular-beam-epitaxy-grown n-InGaAs/InAlAs/p-InGaAs and n-InGaAs/InP/p-InGaAs heterostructures using a self-aligned process for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or InP) by the real-space transfer (RST) process, luminesce in the low-doped p-type InGaAs active layer. An essential feature of present devices, besides their self-aligned collector-up configuration, is a relatively heavy doping of the n-type emitter channel, with the sheet dopant concentration of 4×1012 cm−2. This ensures a higher uniformity of the electric field in the channel and provides a relief from RST instabilities at a high level of collector current (linear density ∼10 A/cm). Devices with InAlAs and InP barriers show rather different optical characteristics, mainly due to the different band lineups ΔEC/ΔEV in InGaAs/InAlAs and InGaAs/InP heterostructures, leading to different ratios between the RST current and the parasitic leakage of holes from the collector into the channel. At high RST current densities, the effective carrier temperature Te in the active collector layer, determined from the high-energy tails of the luminescence spectra, is strongly enhanced compared to the lattice temperature. This decreases the device radiative efficiency and leads to a thermionic emission of carriers out of the active layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353393
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  • 4
    Electronic Resource
    Electronic Resource
    Optical gain and loss in 3 μm diode "W" quantum-well lasers (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2833-2835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gain in broad-area midinfrared diode "W" lasers (λ=3–3.1 μm) has been measured using lateral mode spatial filtering combined with the Hakki–Paoli approach. The internal optical loss of (approximate)19 cm−1 determined from the gain spectra was the same for devices with either ten or five period active regions and nearly constant in the temperature range between 80 and 160 K. Analysis of the differential gain and spontaneous emission spectra shows that the main contribution to the temperature dependence of the threshold current is Auger recombination, which dominates within almost the entire temperature range studied (80–160 K). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1471571
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of the grain structure on the Fermi level in polycrystalline silicon: A quantum size effect? (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1824-1826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been observed by several authors that metal-oxide-semiconductor devices with polycrystalline Si (poly-Si) gates behave differently depending on the doping species in poly-Si: the work-function difference between the silicon substrate and the gate (φPS) is higher when the gates are doped with arsenic than when they are doped with phosphorus. As a function of the doping devel, this difference becomes first noticeable at ∼1019 cm−3, and then it increases for heavier doped materials, reaching 120 meV near the dopant solubility limit. We believe that the different behavior of φPS can be explained by different grain textures at the poly-Si/SiO2 interface. Our transmission electron microscopy of the films indicates that while P-doped material consists of large (≈3000 A(ring)) grains, As-doped poly-Si preserves its as-deposited columnar structure, even after a high-temperature anneal. Moreover, at the interface with the gate oxide an as-deposited microstructure with very small (≈100 A(ring)) "embrionic'' grains is preserved. On the basis of these observations, we suggest a model for the different behavior of φPS. The model is based on a quantum size effect which becomes important for such small grain dimensions at the interface in As-doped poly-Si. This effect drastically reduces the number of states available in the conduction band at low energies and thus forces a more complete filling of the impurity band. The resulting shift of the Fermi level provides a qualitative explanation for the observed puzzling difference between the work functions of As- and P-doped poly-Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98482
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  • 6
    Electronic Resource
    Electronic Resource
    Measurement of the effective temperature of majority carriers under injection of hot minority carriers in heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2247-2249 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a purely electrical method for measuring the effective temperature Te of majority carriers under the injection of hot minority carriers. The Te of holes in a thin p-type InGaAs layer, heated by electron injection from an InAlAs layer in a three-terminal lattice-matched heterostructure, was determined by measuring the thermionic emission current of holes over another specially designed InGaAs/InAlAs barrier. At T=77 K, we observed an overheating Te−T of over 50 K, even at moderate injection power levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111659
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  • 7
    Electronic Resource
    Electronic Resource
    Direct modulation and optical confinement factor modulation of semiconductor lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1645-1647 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for modulation of semiconductor lasers based on the modulation of the optical confinement factor is demonstrated. Using this method, an enhanced −3 dB bandwidth is observed in agreement with the small signal rate equation analysis. A modulation response that drops at high frequencies slower than the conventional direct current modulation response is achieved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115043
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  • 8
    Electronic Resource
    Electronic Resource
    Hot electron luminescence in In0.53Ga0.47As transistor channel (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1376-1378 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of light emission are reported in the 1.1–2.5 eV energy range, by hot electrons in the In0.53Ga0.47As channel of a complementary charge injection transistor. By comparing electrical characteristics and light emission, there is the ability to identify the intraconduction band transitions as the main light emission mechanism. Hot-electron effective temperatures up to 2200 K have been determined from high energy exponential tails of the electroluminescence spectra. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113206
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  • 9
    Electronic Resource
    Electronic Resource
    Dependence of the off-state current in polycrystalline silicon thin film on electric field in the channel (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2114-2115 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We correlated the off-state current in polycrystalline silicon (polysilicon) thin film transistor (TFT) with the peak electric field in the channel of the device. We investigated p-channel TFTs with different gate oxide thicknesses, at varying gate and drain biases. The electric fields in the channel of the devices under these experimental conditions were calculated using both process and device simulators, and the experimental off-state current was plotted against simulated fields. We found that in a wide range of electric fields the current exhibits a nearly exponential behavior. Different combinations of the drain and gate biases produce nearly the same off-state current, provided the calculated peak field is the same; moreover, curves corresponding to different gate oxide thicknesses overlay each other. Our results are compatible with the model of the off-state current as being due to the field emission at grain boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111700
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  • 10
    Electronic Resource
    Electronic Resource
    Control of surface-emitting laser diodes by modulating the distributed Bragg mirror reflectivity: Small-signal analysis (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2460-2462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cavity-loss control of surface emitting distributed Bragg reflector lasers by electro-optic modulation of the Bragg mirror reflectivity is shown to be more efficient at high frequencies than the conventional control by current modulation. Combining both means of control offers additional possibilities, such as the elimination of relaxation oscillations and the achievement of a pure frequency-modulation regime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110475
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