ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (29)
  • 1
    Electronic Resource
    Electronic Resource
    Effect of annealing temperature on optical and structural properties of ion-beam-synthesized semiconducting FeSi2 layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4312-4317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both as-implanted and annealed ion-beam-synthesized semiconducting FeSi2 layers on Si(001) substrates have been investigated by optical transmission measurements and transmission electron microscopy. The effect of annealing temperature on the minimum direct band gap and the Urbach tail width was found to be associated with the growth of β grains, the formation of a well-defined polycrystalline layer, and the removal of implantation-induced damage during the subsequent thermal annealing. The direct band gap and the Urbach tail width in the sample first annealed at a temperature to produce a metallic α phase, followed by a prolonged annealing at a temperature to produce a β phase, were also studied. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361879
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Thermal processing of strained GaInAs/GaAs high hole mobility transistor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1116-1118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the resistance to thermal processing of a realistic strained-layer device structure: a GaAs/GaInAs p-type modulation-doped field-effect transistor layer. The integrity of the structure was monitored using the photoluminescence from the strained quantum well in the active region of the structure. No evidence of mixing or strain relaxation was observed when samples were annealed at 750 °C for 5 h. At higher temperatures, 900 °C and above, mixing is observed and values for the interdiffusion constants and the activation energy obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102585
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1958-1963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam synthesized polycrystalline semiconducting FeSi2 on Si(001) has been investigated by transmission measurements at temperatures between 10 and 300 K. The existence of a minimum direct band gap was demonstrated and its variation with the temperature was studied by means of a three-parameter thermodynamic model and the Einstein model. Band tail states and states on a shallow impurity level were found to give rise to the absorption below the fundamental edge. The presence of an Urbach exponential edge was shown and the temperature dependence of the Urbach tail width was also studied based on the Einstein model. A strong structural disorder associated with grain boundaries between and within the FeSi2 grains and their related defects was found to be the dominant contribution at room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360167
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    The analysis of the temperature dependence of photoconductive frequency-resolved spectroscopy in the presence of carrier trapping: Application to polycrystalline silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2958-2964 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analysis of photoconductive frequency-resolved spectroscopy is developed for variable temperature measurements. It is shown that when the excess carrier kinetics is dominated by carrier trapping the technique can be used to obtain the major trap parameters. This analysis is applied as an example to polycrystalline silicon on insulator on silicon films and a dominant trap with an activation energy of 70 meV is identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354055
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Comparative study of silicon nitride encapsulated and phosphine overpressure annealing on the interdiffusion of InxGa1−xAs-InxGa1−xAsyP1−y heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1463-1465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal interdiffusion on the group-V sublattice in InxGa1−xAs-InxGa1−xAsyP1−y quantum-well structures has been characterized for samples annealed either with silicon nitride encapsulation or under a phosphine overpressure in two different metalorganic vapor-phase-epitaxy reactors under different phosphine overpressures. Under all conditions the interdiffusion lengths were found to be comparable, with only small effects due to the phosphine overpressure. This suggests that interdiffusion results obtained from silicon nitride capped samples can be applied to the interdiffusion that occurs during growth conditions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358893
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3782-3786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion in InGaAs/GaAs quantum wells has been studied using photoluminescence to follow the development of the diffusion with time in a single sample. Two distinct regimes are seen; a fast initial diffusion and a second steady-state diffusion. The steady-state diffusion was found to be dependent on the depth of the quantum well from the surface and to correlate with published data on the indiffusion of gallium vacancies into gallium arsenide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352884
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1686-1692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence coupled with repetitive thermal annealing has been used to determine the diffusion coefficients for intermixing in InxGa1−xAs/GaAs quantum wells and to study the subsequent effects of ion implantation on the intermixing. It is shown that following ion implantation there is a very fast interdiffusion process, which is independent of the implanted ion and that is thought to be due to the rapid diffusion of interstitials created during the implantation. Following this rapid process, it was found that neither gallium nor krypton ions had any effect on the subsequent interdiffusion coefficient. Following arsenic implantation in addition to the initial damage related process, an enhanced region of interdiffusion was observed with a diffusion coefficient that was an order of magnitude greater than that of an unimplanted control wafer. This enhanced process is thought to be due to the creation of group III vacancies by the arsenic atoms moving onto group V lattice sites. This fast process was present until the structure had broadened by about 75 A(ring) when the diffusion coefficient returned to the unimplanted control value. The activation energy for the interdiffusion was measured over the temperature range 1050–750°C and a value of 3.7±0.1 eV was measured. This was found to be independent of the implanted ion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353204
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    The effects of silicon and beryllium on the interdiffusion of GaAs/ AlxGa1−xAs and InxGa1−xAs/GaAs quantum well structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7715-7719 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of silicon and beryllium at doping levels of up to 1019 cm−3 on the interdiffusion of GaAs/AlxGa1−xAs and InxGa1−xAs/GaAs quantum wells after annealing have been studied using photoluminescence. It was found that for beryllium concentrations up to 2.5 ×1019 cm−3 and for silicon doping concentrations up to 1018 cm−3, no change in the interdiffusion coefficients could be measured. For a silicon doping concentration of 6×1018 cm−3 a dramatic degradation of the material quality was observed following annealing at 750 °C for 15 s. This resulted in the luminescence from the well disappearing and the appearance of deep level luminescence related to donor-gallium vacancy complexes and arsenic antisite defects. From these results we suggest that the position of the Fermi level plays no role in the intermixing of III-V heterostructures and that most of the enhanced intermixing observed in silicon-doped GaAs/AlxGa1−xAs structures is related to silicon relocation at very high doping levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353969
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Evaluation of silicon-on-insulator substrates using photoconductive frequency resolved spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6754-6758 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe here the application of photoconductive frequency resolved spectroscopy to determine excess carrier lifetime distributions and carrier kinetics in SIMOX (separation by implanting oxygen) material. In order to evaluate the influence of the implant and anneal processes on the quality of the silicon overlayer we have also analyzed unprocessed bulk silicon, high temperature annealed bulk silicon and as-implanted SIMOX material. Our photoconductive frequency resolved spectroscopy results reveal that the SIMOX layers have a higher density of defects than standard device quality silicon substrates. Characteristic parameters of the dominant traps in these materials have been obtained from Arrhenius plots of the lifetime distributions. The defects found in these SIMOX layers are shown to be formed during the high temperature anneal stage of the material production.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355073
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Optical characterization of thermal mixing in quantum wells and heterostructures using a Green's function model (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7581-7584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a simple Green's function model of interface mixing in quantum wells that provides exact quantitative solutions for real structures. Examples are given of several important low-dimensional heterostructures. The model enables the energy of the band-edge optical transition to be predicted as mixing proceeds, so that optical characterization techniques such as photoluminescence or absorption provide a powerful tool for studying mixing and obtaining interdiffusion constants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347526
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...