Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 7715-7719
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effects of silicon and beryllium at doping levels of up to 1019 cm−3 on the interdiffusion of GaAs/AlxGa1−xAs and InxGa1−xAs/GaAs quantum wells after annealing have been studied using photoluminescence. It was found that for beryllium concentrations up to 2.5 ×1019 cm−3 and for silicon doping concentrations up to 1018 cm−3, no change in the interdiffusion coefficients could be measured. For a silicon doping concentration of 6×1018 cm−3 a dramatic degradation of the material quality was observed following annealing at 750 °C for 15 s. This resulted in the luminescence from the well disappearing and the appearance of deep level luminescence related to donor-gallium vacancy complexes and arsenic antisite defects. From these results we suggest that the position of the Fermi level plays no role in the intermixing of III-V heterostructures and that most of the enhanced intermixing observed in silicon-doped GaAs/AlxGa1−xAs structures is related to silicon relocation at very high doping levels.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.353969
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