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  • 1
    Electronic Resource
    Electronic Resource
    The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1686-1692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence coupled with repetitive thermal annealing has been used to determine the diffusion coefficients for intermixing in InxGa1−xAs/GaAs quantum wells and to study the subsequent effects of ion implantation on the intermixing. It is shown that following ion implantation there is a very fast interdiffusion process, which is independent of the implanted ion and that is thought to be due to the rapid diffusion of interstitials created during the implantation. Following this rapid process, it was found that neither gallium nor krypton ions had any effect on the subsequent interdiffusion coefficient. Following arsenic implantation in addition to the initial damage related process, an enhanced region of interdiffusion was observed with a diffusion coefficient that was an order of magnitude greater than that of an unimplanted control wafer. This enhanced process is thought to be due to the creation of group III vacancies by the arsenic atoms moving onto group V lattice sites. This fast process was present until the structure had broadened by about 75 A(ring) when the diffusion coefficient returned to the unimplanted control value. The activation energy for the interdiffusion was measured over the temperature range 1050–750°C and a value of 3.7±0.1 eV was measured. This was found to be independent of the implanted ion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353204
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  • 2
    Electronic Resource
    Electronic Resource
    The effects of silicon and beryllium on the interdiffusion of GaAs/ AlxGa1−xAs and InxGa1−xAs/GaAs quantum well structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7715-7719 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of silicon and beryllium at doping levels of up to 1019 cm−3 on the interdiffusion of GaAs/AlxGa1−xAs and InxGa1−xAs/GaAs quantum wells after annealing have been studied using photoluminescence. It was found that for beryllium concentrations up to 2.5 ×1019 cm−3 and for silicon doping concentrations up to 1018 cm−3, no change in the interdiffusion coefficients could be measured. For a silicon doping concentration of 6×1018 cm−3 a dramatic degradation of the material quality was observed following annealing at 750 °C for 15 s. This resulted in the luminescence from the well disappearing and the appearance of deep level luminescence related to donor-gallium vacancy complexes and arsenic antisite defects. From these results we suggest that the position of the Fermi level plays no role in the intermixing of III-V heterostructures and that most of the enhanced intermixing observed in silicon-doped GaAs/AlxGa1−xAs structures is related to silicon relocation at very high doping levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353969
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  • 3
    Electronic Resource
    Electronic Resource
    Optical waveguides formed by deuterium passivation of acceptors in Si doped p-type GaAs epilayers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4151-4155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the use of plasma hydrogenation of Si doped, p-type GaAs crystalline samples to form infrared waveguides through acceptor passivation. Epilayers grown by liquid phase epitaxy were exposed to a deuterium plasma for ninety minutes at three different temperatures. Secondary-ion mass spectrometry (SIMS) analysis indicated that the deuterium concentrations in the crystals after plasma exposure were nearly equal to the acceptor level and extended to depths between 2.0 and 4.0 μm. Reflectivity measurements showed that the epilayers had passivated regions whose thicknesses corresponded to those determined by SIMS analysis. Laser coupling experiments at 1.15 μm showed optical waveguiding in each sample and lowest propagation losses were on the order of 35 dB/cm. At a wavelength of 1.523 μm, only the sample processed at the highest temperature exhibited laser guiding and losses were considerably higher.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350849
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  • 4
    Electronic Resource
    Electronic Resource
    Disordering of AlGaAs/GaAs quantum well structures using low dose oxygen implantation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5715-5717 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the photoluminescence study of low-energy, low-dose oxygen implantation induced compositional disordering of AlGaAs/GaAs quantum well structures. Significant disordering of both single and multiple AlGaAs/GaAs quantum wells has been achieved using low-energy (155 keV) oxygen ion implantation with doses as small as 5 × 1013 cm−2 after a moderate annealing step. These doses are significantly lower than those reported previously (500 keV and 1016 cm−2).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350508
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  • 5
    Electronic Resource
    Electronic Resource
    Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1456-1458 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multiquantum-well structures in the far-infrared (FIR) regime, (h-dash-bar)ω〈(h-dash-bar)ωLO, utilizing the Dutch free electron laser, (entitled FELIX—free electron laser for infrared radiation). The calculated scattering rates for optic and acoustic phonon, and alloy scattering have been included in a rate equation model of the transient FIR intersubband absorption, and show excellent agreement with our degenerate pump-probe spectroscopy measurements where, after an initial rise time determined by the resolution of our measurement, we determine a decay time of ∼10 ps. This is found to be approximately constant in the temperature range from 4 to 100 K, in good agreement with the predictions of alloy scattering in the Si0.7Ge0.3 wells. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1452794
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  • 6
    Electronic Resource
    Electronic Resource
    Vacancy controlled interdiffusion of the group V sublattice in strained InGaAs/InGaAsP quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 797-799 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we present the results of a photoluminescence study of the interdiffusion of arsenic and phosphorous in the In0.66Ga0.33As/In0.66Ga0.33As0.7P0.3 system over the temperature range 950–600 °C. We have shown that the diffusion is Fickian with no dependence of the diffusion coefficient on the substrate doping type or etch pit density. For both tin- and sulfur-doped substrates the diffusion can be described by a diffusion coefficient D, which is given by D=D0 exp(−EA/kT), where D0=23 cm2/s and EA=3.7 eV for temperatures greater than 675 °C. This activation energy is the same as that determined for the group III interdiffusion in In0.2Ga0.8As/GaAs. Below this temperature a lower activation energy process takes over with D0=5×10−10 cm2/s and EA=1.7 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109911
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of growth phase on intrinsic Stark effect in CdS–ZnSe superlattices (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 671-673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The operation of the intrinsic Stark effect at visible wavelengths is reported, for both cubic and wurtzite type-II CdS–ZnSe strained layer superlattices grown on CdS buffer layers on (111)A GaAs. An observed increase of the effective piezoelectric coefficient from the measured cubic bulk value is attributed to a nonlinear effect, as previously reported for CdTe quantum wells [R. André, J. Cibert, Le Si Dang, J. Zeman, and M. Zigone, Phys. Rev. B 53, 6951 (1996)]. Exciton peak shifts of 70 meV per decade change of excitation intensity are similar in magnitude to those found in CdS–CdSe superlattices of similar period. These shifts are attributed to screening of the internal piezoelectric fields by photoexcited carriers. Exciton peak shifts that are smaller by an order of magnitude appear in CdS–ZnSe samples, grown on (100) ZnSe buffers and therefore predicted to exhibit no piezoelectric effects of any order. These small shifts, which we attribute to space charge buildup, are a characteristic feature of type-II superlattices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119825
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  • 8
    Electronic Resource
    Electronic Resource
    Optical properties of Si nanocrystals prepared by magnetron sputtering (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4148-4150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible photoluminescence (PL), optical transmission, and Raman scattering spectra of Si nanocrystals embedded in SiO2 matrix have been studied. Films were deposited by rf magnetron sputtering of compound SiO2/Si targets. Films containing silicon in the form of nanocrystals clusters show intense luminescence at room temperature. Films containing only amorphous Si clusters show little or no PL. Annealing in vacuum or in specific atmosphere leads to strong change of the PL spectrum and its intensity. Results are explained by strong influence of the Si/SiO2 interface state on integral PL emission. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116967
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  • 9
    Electronic Resource
    Electronic Resource
    Aluminium implantation-induced disordering of AlGaAs/GaAs quantum well structures (1991)
    Springer
    Optical and quantum electronics 23 (1991), S. S823 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The process of Al implantation-induced disordering of AlGaAs/GaAs quantum well structures has been studied for optical waveguide applications. A study of the implanted samples using photoluminescence demonstrates that disordering is primarily a damage-based process and that this process may be suitable for the fabrication of surface gratings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624973
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  • 10
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    Optically Induced Deexcitation of Rare-Earth Ions in a Semiconductor Matrix (2002)
    American Physical Society
    Details
    Publication Date: 2002-11-07
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
    Published by American Physical Society
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