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  • 1
    Electronic Resource
    Electronic Resource
    Determination of the deformation potentials of GaAs0.80P0.20 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1951-1953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deformation potentials can be determined by measuring the variation of the energy of the electronic transitions with strain. In this work, the hydrostatic and shear potentials of the band-gap electronic transition (E0) and the transitions along the 〈111〉 direction (E1) of GaAs1−xPx, x≈0.20, have been determined by electroreflectance characterization of GaAs1−xPx layers with different levels of strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357653
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  • 2
    Electronic Resource
    Electronic Resource
    In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2665-2670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using real-time in situ laser light scattering we study, in this work, the influence of growth kinetics on the initial development of the crosshatched morphology and its subsequent evolution. The crosshatched morphology is characteristic of relaxed low strained layers (cursive-epsilon〈 2%) and has been traditionally related to the plastic relaxation process driven by generation and multiplication of dislocations. However we have observed that, if the growth rate is slow enough, the onset of crosshatch formation takes place at a layer thickness in which the dislocation formation and multiplication processes have not appeared yet. This reveals that the stress field generated by the small density of misfit dislocations formed by bending of the dislocations preexisting in the substrate is strong enough to affect the evolution of the growth front morphology. Our results also show that the starting point and evolution of this characteristic morphology depend on the growth rate in such a way that when the growth rate is lower the crosshatched morphology starts to develop at a smaller thickness and shows a faster evolution rate. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1345518
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  • 3
    Electronic Resource
    Electronic Resource
    Compositional mapping of semiconductor structures by friction force microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2297-2299 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Topographic and chemical mapping of materials at high resolution define the goals of a microscope. Force microscopy can provide methods for simultaneous topography and chemical characterization of materials. Here we describe the use of the atomic force microscope to map chemical variations of semiconductor samples. Chemical maps of semiconductor InP/InGaAs alloys have been determined with 3 nm spatial resolution while 10% changes in indium composition are resolved in InxGa1−xAs structures. The present resolution is limited by the tip's curvature radius, cantilever lateral force constant, and the total applied force. Theoretical calculations predict lateral compositional resolutions of about 1 nm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116169
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  • 4
    Electronic Resource
    Electronic Resource
    Relaxation behavior of undoped InxGa1−xP 0.5〈x〈0.7 grown on GaAs by atomic layer molecular-beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3327-3332 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the relaxation behavior of compressive InxGa1−xP layers grown by atomic layer molecular-beam epitaxy at Ts=420 °C with x=56%±3% and x=67%±3%. Similar (thickness and composition) InxGa1−xP layers were grown under different growth conditions in order to assess the influence of the stoichiometry of the growth front on the structural properties and the relaxation process of this material system. All InxGa1−xP layers were characterized by double-crystal x-ray diffraction, transmission electron microscopy, and Nomarski interference. Our results show that surface stoichiometry during growth does not affect the relaxation behavior of InxGa1−xP layers but strongly determines their structural characteristics related to composition modulation features which appear in all our InxGa1−xP layers. We have established an empirical relation between residual strain and thickness. This relation makes predictable the residual strain of more complicated structures which can be introduced as buffer layers in lattice-mismatched heteroepitaxial systems. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363243
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  • 5
    Electronic Resource
    Electronic Resource
    Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 839-841 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The plastic relaxation of multilayer structures of strained InGaAs grown above critical thickness on GaAs is reported and compared with the relaxation of single layers and with theory. We show that a composite structure, taken as a whole, follows the same relaxation law as observed in single layers. However, departures of the strains of some component layers from theory show that misfit dislocations are easily pinned at an interface. Implications for the design of relaxed buffer layer growth are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112177
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  • 6
    Electronic Resource
    Electronic Resource
    Observation of AlGaAs/GaAs multiquantum well structure by scanning tunneling microscopy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 36-38 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have imaged an AlGaAs/GaAs multiquantum well structure by scanning tunneling microscopy (STM). In order to localize the structure the STM is integrated in a conventional scanning electron microscope. The observed surface structure has a periodicity of ≈180 A(ring) and shows an apparent corrugation of ≈10 A(ring) in the constant current mode. We discuss the possible mechanisms of the observed contrast, which we tentatively attribute to the different electrical properties of the two different layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102639
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  • 7
    Electronic Resource
    Electronic Resource
    Strain and phonon shifts in GaAs1−xPx alloys (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1805-1807 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the influence of an in-plane (001) strain on the energy position of the long wavelength optical modes of GaAs1−xPx alloys. These alloys have a two mode behavior. We have observed that the strain-induced shift of the Raman peaks corresponding to the GaAs-like vibration is greater than that of the GaP-like vibration. This result shows that the two modes are not affected in the same way by the strain. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116019
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