Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 3390-3392
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report measurements of the plastic relaxation of InGaAs layers grown above critical thickness on GaAs substrates. The relaxation is accurately hyperbolic, proportional to the reciprocal of the layer thickness, in agreement with a recent geometrical theory of critical thickness [D. J. Dunstan, S. Young, and R. H. Dixon, J. Appl. Phys. 70, 3038 (1991)]. At large thicknesses, work hardening is observed which leads to a residual strain dependent on the original misfit.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105684
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