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  • Artikel  (78)
  • Springer  (65)
  • American Institute of Physics (AIP)  (8)
  • Nature Publishing Group  (5)
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  • 1
    Digitale Medien
    Digitale Medien
    Observation of slip dislocations in (100) silicon wafers after BF2 ion implantation and rapid thermal annealing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 800-802 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The generation of slip dislocations in BF2 ion-implanted, 100-mm-diam silicon wafers during rapid thermal annealing is investigated. Whole wafer x-ray topography shows that annealing at 1150 °C causes slip to initiate randomly at positions of maximum resolved stress at the wafer edges and over scribe marks made on the back surface prior to annealing. Lowering the annealing temperature by 20 °C, which corresponds to decreasing the silicon yield stress by less than 106 dyn cm−2, prevents slip from occurring and allows sufficient removal of implantation-induced defects from which junction diodes with good current-voltage characteristics are fabricated.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337377
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  • 2
    Digitale Medien
    Digitale Medien
    Etching of SiO2 in an electron cyclotron resonance argon plasma (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1311-1313 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Etching of SiO2 with low-energy Ar ions has been studied in an electron cyclotron resonance (ECR) based etching system. Ion energies were controlled by a capacitively coupled 13.56 MHz bias of the substrate. Etch rates of over 100 A(ring)/min have been achieved at ion energies below 100 V. The variation in etch rate has been studied as a function of ECR power, self-induced bias, and position of the wafer relative to the ECR source. This low-energy process can be utilized for cleaning of semiconductor surfaces prior to chemical vapor deposition or metallization processes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103198
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  • 3
    Digitale Medien
    Digitale Medien
    Reactive ion etch process with highly controllable GaAs-to-AlGaAs selectivity using SF6 and SiCl4 (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1083-1085 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The use of a reactive ion etch process with high selectivity for etching GaAs layers and stopping on underlying AlGaAs layers is reported. A key feature is the high degree of control that can be maintained over the GaAs-to-AlGaAs selectivity by changing the SF6/SiCl4 ratio while keeping other etch parameters such as pressure, dc bias, or power constant. Values of the GaAs-to-AlGaAs selectivity can be varied from 1 to 500. Diluent gases such as helium can be added to reduce the etch rate, which is important to avoid damage to sensitive device structures and to the overhang profile of resist materials used for liftoff metallization. The application of this etch process for high electron mobility transistor fabrication is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98747
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  • 4
    Digitale Medien
    Digitale Medien
    Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devices (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2225-2226 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Reactive ion etching is important for III-V device fabrication. Commonly encountered applications include the need to remove an epitaxial layer selectively from underlying layers and the need for definition of mesas and other structures with carefully controlled dimensions. We present results showing the use of very thin Al0.9Ga0.1As and In0.2Ga0.8As stop-etch layers, which when used in conjunction with a particular etch chemistry can provide highly selective removal of epitaxial layers in GaAs-based III-V compound semiconductors. In addition, we report the selective removal of an Al0.3Ga0.7As layer from underlying GaAs by the use of a thin In0.2Ga0.8As interlayer.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98947
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  • 5
    Digitale Medien
    Digitale Medien
    Piezoelectric field effects in InGaAs (111)B quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1393-1395 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Strained In0.21Ga0.79As/GaAs quantum well structures have been grown by molecular beam epitaxy on (111)B GaAs substrates. Well widths between 20 and 160 A(ring), separated by 500 A(ring) barriers were grown sequentially on the same substrate and subsequently characterized by low-temperature (10 K) photoluminescence. The variation of the e-hh transition energy with well width is markedly different for samples grown simultaneously on (100) and (111)B substrates due to the strain induced piezoelectric field. Using the envelope function approximation, the dependence of n=1 e-hh transitions of (111)B samples on well width can be interpreted by the presence of a built-in electric field of magnitude of 1.45×107 V/m. In contrast to the (100) sample, exciton lifetimes in the (111)B sample depend strongly on well width because of spatial separation of electrons and holes in the triangular wells. In the 160 A(ring) well, the exciton lifetime increases to 755 ns corresponding to a reduction of about three orders of magnitude in the electron-hole wave function overlap integral. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115544
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  • 6
    Digitale Medien
    Digitale Medien
    Electron cyclotron resonance plasma-enhanced filament-assisted diamond growth (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1444-1446 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A novel technique was developed to grow high-purity polycrystalline diamond films at 850 °C and 50 mTorr with 10% CH4, 2% O2, and balance H2 using a filament-assisted chemical vapor deposition technique in combination with an electron cyclotron resonance (ECR) plasma. Using Raman spectroscopy and in situ plasma diagnostics, we have shown that the hydrogen plasma selectively etched nondiamond components during deposition. Experiments with ECR plasma and the filament-assisted technique from 10−6 Torr to 50 mTorr and 500–1000 °C indicated that low-energy electrons are a key factor in growth of diamond thin films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.107265
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  • 7
    Digitale Medien
    Digitale Medien
    Effect of Thyroxine on the Swelling of Mitochondria isolated from Various Tissues of the Rat (1956)
    [s.l.] : Nature Publishing Group
    Nature 178 (1956), S. 1119-1119 
    Details
    ISSN: 1476-4687
    Quelle: Nature Archives 1869 - 2009
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Notizen: [Auszug] Not all tissues respond in the same degree to the in vivo administration of thyroxine. Gordon and Heming8 found that the oxygen consumption of slices of liver, kidney, diaphragm and heart from thyrotoxic rats was significantly greater than normal, while that of slices of spleen, brain and testis ...
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1038/1781119a0
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  • 8
    Digitale Medien
    Digitale Medien
    Tyrosine kinase receptor indistinguishable from the c- met protein (1989)
    [s.l.] : Nature Publishing Group
    Nature 339 (1989), S. 155-156 
    Details
    ISSN: 1476-4687
    Quelle: Nature Archives 1869 - 2009
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Notizen: [Auszug] P190 is a heterodimer of two disulphide-linked subunits: a 50K a-chain which is exposed at the cell surface and a 145K /3-chain that spans the plasma membrane and includes sites for tyrosine phosphorylation5'6. Recently, it has been proposed that the protein encoded by the c-met proto-oncogene may ...
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1038/339155a0
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  • 9
    Digitale Medien
    Digitale Medien
    Misidentified cell (1989)
    [s.l.] : Nature Publishing Group
    Nature 337 (1989), S. 311-312 
    Details
    ISSN: 1476-4687
    Quelle: Nature Archives 1869 - 2009
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Notizen: [Auszug] SIR—Because the cell line TE671 is said to originate from an early culture of a human medulloblastoma1, it has been widely used to investigate this tumour type and as a model for primitive neural cells in general. And because the cell line can be infected by the AIDS virus HIV2 (in a way ...
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1038/337311c0
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  • 10
    Digitale Medien
    Digitale Medien
    Transport of K+ and other cations across phospholipid membranes by nonesterified fatty acids (1994)
    Springer
    The journal of membrane biology 141 (1994), S. 21-28 
    Details
    ISSN: 1432-1424
    Schlagwort(e): Fatty acids ; Liposomes ; Cation transport ; Membrane transport
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Chemie und Pharmazie
    Notizen: Abstract The rate of change of internal pH and transmembrane potential has been monitored in liposomes following the external addition of various cation salts. Oleic acid increases the transmembrane movement of H+ following the imposition of a K+ gradient. An initial fast change in internal pH is seen followed by a slower rate of alkalinization. High concentrations of the fatty acid enhance the rate comparable to that seen in the presence of nigericin in contrast to the effect of FCCP (carbonyl cyanide p-(tri-fluoromethoxy)phenyl hydrazone) which saturates at an intermediate value. The ability of nonesterified fatty acids to catalyze the movement of cations across the liposome membrane increases with the degree of unsaturation and decreases with increasing chain length. Li and Na salts cause a similar initial fast pH change but have less effect on the subsequent slower rate. Similarly, the main effect of divalent cation salts is on the initial fast change. The membrane potential can enhance or inhibit cation transport depending on its polarity with respect to the cation gradient. It is concluded that nonesterified fatty acids have the capability to complex with, and transport, a variety of cations across phospholipid bilayers. However, they do not act simply as proton/cation exchangers analogous to nigericin nor as protonophores analogous to FCCP. The full cycle of ionophoric action involves a combination of both functions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00232870
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