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  • 1
    Electronic Resource
    Electronic Resource
    Single scan deep-level transient spectroscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4068-4070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new single scan method for obtaining deep level trap parameters is presented. This method represents an improvement over previous single scan approaches because it does not involve numerical analysis and it uses data over the entire temperature range of the deep-level transient spectroscopy peak. Data are presented for an isolated deep level, the E center. The usefulness of this new method is also demonstrated by an example of successful analysis of overlapping deep level signals. The new single scan method maintains the simplicity of the traditional method of data collection. However, the single temperature scan saves time and more important, is often more accurate than the traditional multitemperature scan technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346244
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  • 2
    Electronic Resource
    Electronic Resource
    Role of boron in the multistable carbon-related defect in silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4249-4252 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conversion of the carbon-interstitial–phosphorous-substitutional (Ci-Ps) pairs from configuration M4 to M1 is shown to have a strong dependence on the method of sample fabrication. This conversion can be observed only in samples that have been contaminated by boron during sample fabrication. The temperature at which the conversion to M1 occurs is closely related to the level of boron contamination. In addition, it is shown that the M1 peak is not a single defect level. M1 consists of at least two overlapping levels that have similar properties but which are clearly related to different configurations. It is proposed that the conversion of M4 to M1 involves long-range migration of boron interstitials and that the M1 configurations involve a boron interstitial trapped at an isolated Ci-Ps pair.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344938
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of oxygen in silicon by ratio of A center to E center (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1903-1906 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen concentration of silicon has been determined by the ratio of the A center to E center in gamma-irradiated n-type silicon. The concentrations of these defects were measured by the deep-level transient spectroscopy technique. It has been found that the ratio of the A center to E center is simply proportional to that of oxygen to phosphorus content by a factor of 0.072. In addition to extending the range of sensitivity to oxygen to levels below that obtainable using infrared absorption, this new method permits easy determination of the distribution of oxygen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345619
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  • 4
    Electronic Resource
    Electronic Resource
    Frequency-scanned deep-level transient spectroscopy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 628-630 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The output signal in a deep-level transient spectroscopy experiment is a function of both the rate-window settings and sample temperature. Usually, the rate window is held fixed and the temperature scanned to produce the deep-level spectrum. We will demonstrate that a deep-level spectrum can also be obtained by fixing the temperature and scanning the rate window.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334753
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  • 5
    Electronic Resource
    Electronic Resource
    Study of irradiation-induced defects in germanium (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1549-1553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation-induced defects in germanium were studied using deep-level transient spectroscopy and stress transient spectroscopy. Four electron traps have been identified: the planar four vacancy at Ec −0.09 eV, the divacancy at Ec −0.17 eV, the vacancy-oxygen pair at Ec −0.27 eV, and the donor-vacancy pair level at Ec −0.35 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339939
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  • 6
    Electronic Resource
    Electronic Resource
    Charge redistribution in the multiple levels of the DX center (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1746-1748 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The multiple DX levels are studied by using the rate-window scan method of deep level transient spectroscopy. It is found that the electron concentrations in the individual DX levels do not always increase monotonically with filling time, showing a charge redistribution effect. This charge redistribution in the DX levels indicates that the DX center is negatively charged and that each defect site is able to generate multiple states in different levels. The charge redistribution effect unambiguously rules out all existing small lattice relaxation models, while it is understood within the broken-bond negative U model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106238
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  • 7
    Electronic Resource
    Electronic Resource
    The mechanism of electron capture by DX centers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1362-1364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that the electron capture transients of the individual DX levels in Si-doped AlGaAs include two regimes: net capture and redistribution. In this letter, by analyzing both of these regimes, the electron capture kinetics of DX centers are determined for the first time. It is found that the capture rate for an empty state is proportional to the square of the free carrier concentration. These kinetics are predicted only by the negative U model in which two electrons are captured sequentially via an intermediate one-electron state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105309
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  • 8
    Electronic Resource
    Electronic Resource
    Radioactive metal tracer investigation of Pd2Si formation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1643-1645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A radioactive metal tracer technique has been developed with a view to identify the dominant diffusing species and the diffusion mechanism during silicide growth.The position of a thin band of radioactive metal, originally at the silicon/metal interface, is determined after silicide formation by alternate use of Rutherford backscattering spectrometry, γ spectrometry, and Ar ion sputter etching. Application of this procedure to the formation of Pd2Si yields a 109Pd activity profile, the position and shape of which indicates that mainly silicon moves during this reaction, while the observed spreading of the profile points to some palladium vacancy diffusion. The data obtained with this approach demonstrate that the technique is well suited for the determination of the predominantly diffusing species, and confirm results of other inert marker and 31Si tracer diffusion experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103219
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  • 9
    Electronic Resource
    Electronic Resource
    Neutron transmutation doping of isotopically engineered Ge (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2121-2123 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0–0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111703
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  • 10
    Electronic Resource
    Electronic Resource
    Heavy metal concentrations in municipal wastewater treatment plant sludge (1985)
    Springer
    Bulletin of environmental contamination and toxicology 35 (1985), S. 38-43 
    Details
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01636477
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