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Neutron transmutation doping of isotopically engineered Ge (1994)

Itoh, K. M. ; Haller, E. E. ; Hansen, W. L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 2121-2123

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals of controlled 74Ge/70Ge isotope composition ratios were grown and subsequently doped by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios were precisely determined by the thermal neutron fluence and the [74Ge]/[70Ge] ratios of the starting Ge materials, respectively. Application of NTD to seven crystals with 0≤[74Ge]/[70Ge]≤4.34 lead to p-type Ge:Ga,As with compensation ratios in the range 0–0.76. The ability to grow crystals with accurately controlled Ge isotope mixtures allows us to obtain ratios anywhere between 0 and 1 for both p- and n-type doping.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111703

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