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The mechanism of electron capture by DX centers (1991)

Su, Z. ; Farmer, J. W.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 1362-1364

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: It has been found that the electron capture transients of the individual DX levels in Si-doped AlGaAs include two regimes: net capture and redistribution. In this letter, by analyzing both of these regimes, the electron capture kinetics of DX centers are determined for the first time. It is found that the capture rate for an empty state is proportional to the square of the free carrier concentration. These kinetics are predicted only by the negative U model in which two electrons are captured sequentially via an intermediate one-electron state.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105309

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