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  • 1
    Electronic Resource
    Electronic Resource
    Development of monoclonal antibodies against the fungi of the ‘Ascochyta complex’ (1996)
    Oxford, U.K. and Cambridge, USA : Blackwell Science Ltd
    Plant pathology 45 (1996), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Two monoclonal antibodies (MAbs) were produced against soluble antigens from the ‘Ascochyta complex’ fungi. Specificity of MAbs was tested by ELISA using antigen-coated wells. MAbs secreted by the monoclonal hybridoma cell line JIM 44 recognized epitopes present in the antigen preparations from Mycosphaerella pinodes and Phoma medicaginis var. pinodella, but not those present in preparations from Ascochyta pisi. At high tissue culture supernatant concentration, MAbs produced by the monoclonal line JIM 45 recognized epitopes from all three fungi, however, on dilution of MAb the antigens from A. pisi were recognized preferentially to those from M. pinodes and P. medicaginis var. pinodella. On the basis of heat and periodate treatment of the antigens from the three fungi it can be concluded that the epitope recognized by JIM 44 is carbohydrate in nature, whereas that recognized by JIM 45 is proteinaceous in nature, carried on a glycoprotein antigen. Antigen preparations from other fungi, including other pea pathogens, non-pathogens associated with pea and other fungi closely related to the ‘Ascochyta complex’, were not detected with either of the two MAbs. Antigen preparations from peas could be used to differentiate healthy and infected seeds in a dot-blot assay, therefore indicating the potential of using the MAbs in the development of a diagnostic test for infection of Pisum seeds by the ‘Ascochyta complex’ fungi.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3059.1996.d01-136.x
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of slip dislocations in (100) silicon wafers after BF2 ion implantation and rapid thermal annealing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 800-802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of slip dislocations in BF2 ion-implanted, 100-mm-diam silicon wafers during rapid thermal annealing is investigated. Whole wafer x-ray topography shows that annealing at 1150 °C causes slip to initiate randomly at positions of maximum resolved stress at the wafer edges and over scribe marks made on the back surface prior to annealing. Lowering the annealing temperature by 20 °C, which corresponds to decreasing the silicon yield stress by less than 106 dyn cm−2, prevents slip from occurring and allows sufficient removal of implantation-induced defects from which junction diodes with good current-voltage characteristics are fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337377
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  • 3
    Electronic Resource
    Electronic Resource
    Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devices (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2225-2226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching is important for III-V device fabrication. Commonly encountered applications include the need to remove an epitaxial layer selectively from underlying layers and the need for definition of mesas and other structures with carefully controlled dimensions. We present results showing the use of very thin Al0.9Ga0.1As and In0.2Ga0.8As stop-etch layers, which when used in conjunction with a particular etch chemistry can provide highly selective removal of epitaxial layers in GaAs-based III-V compound semiconductors. In addition, we report the selective removal of an Al0.3Ga0.7As layer from underlying GaAs by the use of a thin In0.2Ga0.8As interlayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98947
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  • 4
    Electronic Resource
    Electronic Resource
    Reactive ion etch process with highly controllable GaAs-to-AlGaAs selectivity using SF6 and SiCl4 (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1083-1085 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a reactive ion etch process with high selectivity for etching GaAs layers and stopping on underlying AlGaAs layers is reported. A key feature is the high degree of control that can be maintained over the GaAs-to-AlGaAs selectivity by changing the SF6/SiCl4 ratio while keeping other etch parameters such as pressure, dc bias, or power constant. Values of the GaAs-to-AlGaAs selectivity can be varied from 1 to 500. Diluent gases such as helium can be added to reduce the etch rate, which is important to avoid damage to sensitive device structures and to the overhang profile of resist materials used for liftoff metallization. The application of this etch process for high electron mobility transistor fabrication is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98747
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  • 5
    Electronic Resource
    Electronic Resource
    Electron cyclotron resonance plasma-enhanced filament-assisted diamond growth (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1444-1446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique was developed to grow high-purity polycrystalline diamond films at 850 °C and 50 mTorr with 10% CH4, 2% O2, and balance H2 using a filament-assisted chemical vapor deposition technique in combination with an electron cyclotron resonance (ECR) plasma. Using Raman spectroscopy and in situ plasma diagnostics, we have shown that the hydrogen plasma selectively etched nondiamond components during deposition. Experiments with ECR plasma and the filament-assisted technique from 10−6 Torr to 50 mTorr and 500–1000 °C indicated that low-energy electrons are a key factor in growth of diamond thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107265
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  • 6
    Electronic Resource
    Electronic Resource
    Piezoelectric field effects in InGaAs (111)B quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1393-1395 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained In0.21Ga0.79As/GaAs quantum well structures have been grown by molecular beam epitaxy on (111)B GaAs substrates. Well widths between 20 and 160 A(ring), separated by 500 A(ring) barriers were grown sequentially on the same substrate and subsequently characterized by low-temperature (10 K) photoluminescence. The variation of the e-hh transition energy with well width is markedly different for samples grown simultaneously on (100) and (111)B substrates due to the strain induced piezoelectric field. Using the envelope function approximation, the dependence of n=1 e-hh transitions of (111)B samples on well width can be interpreted by the presence of a built-in electric field of magnitude of 1.45×107 V/m. In contrast to the (100) sample, exciton lifetimes in the (111)B sample depend strongly on well width because of spatial separation of electrons and holes in the triangular wells. In the 160 A(ring) well, the exciton lifetime increases to 755 ns corresponding to a reduction of about three orders of magnitude in the electron-hole wave function overlap integral. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115544
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  • 7
    Electronic Resource
    Electronic Resource
    Etching of SiO2 in an electron cyclotron resonance argon plasma (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1311-1313 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etching of SiO2 with low-energy Ar ions has been studied in an electron cyclotron resonance (ECR) based etching system. Ion energies were controlled by a capacitively coupled 13.56 MHz bias of the substrate. Etch rates of over 100 A(ring)/min have been achieved at ion energies below 100 V. The variation in etch rate has been studied as a function of ECR power, self-induced bias, and position of the wafer relative to the ECR source. This low-energy process can be utilized for cleaning of semiconductor surfaces prior to chemical vapor deposition or metallization processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103198
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  • 8
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    Irreversible magnetization switching at the onset of superconductivity in a superconductor ferromagnet hybrid (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-01-01
    Description: We demonstrate that the magnetic state of a superconducting spin valve, that is normally controlled with an external magnetic field, can also be manipulated by varying the temperature which increases the functionality and flexibility of such structures as switching elements. In this case, switching is driven by changes in the magnetostatic energy due to spontaneous Meissner screening currents forming in the superconductor below the critical temperature. Our scanning Hall probe measurements also reveal vortex-mediated pinning of the ferromagnetic domain structure due to the pinning of quantized stray fields in the adjacent superconductor. The ability to use temperature as well as magnetic field to control the local magnetisation structure raises the prospect of potential applications in magnetic memory devices.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 9
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    Predicting the sensitivity of the beryllium/scintillator layer neutron detector using Monte Carlo and experimental response functionsa) (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-09-27
    Description: A methodology for obtaining empirical curves relating absolute measured scintillation light output to beta energy deposited is presented. Output signals were measured from thin plastic scintillator using NIST traceable beta and gamma sources and MCNP5 was used to model the energy deposition from each source. Combining the experimental and calculated results gives the desired empirical relationships. To validate, the sensitivity of a beryllium/scintillator-layer neutron activation detector was predicted and then exposed to a known neutron fluence from a Deuterium-Deuterium fusion plasma (DD). The predicted and the measured sensitivity were in statistical agreement.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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