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  • 1
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    Undulator beamline of the Brockhouse sector at the Canadian Light Source (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-05
    Description: The Brockhouse project at the Canadian Light Source plans the construction of three beamlines, two wiggler beamlines, and one undulator beamline, that will be dedicated to x-ray diffraction and scattering. In this work, we will describe the undulator beamline main components and performance parameters, obtained from ray tracing using XOP-SHADOW codes. The undulator beamline will operate from 4.95 to 21 keV, using a 20 mm period hybrid undulator placed upstream of the wiggler in the same straight section. The beamline optics design was developed in cooperation with the Brazilian Synchrotron - LNLS. The beamline will have a double crystal monochromator with the options of Si(111) or Si(311) crystal pairs followed by two mirrors in the KB configuration to focus the beam at the sample position. The high brilliance of the undulator source will produce a very high flux of ∼10 13 photons/s and high energy resolution into a small focus of 170 μm horizontal and 20-60 μm vertical, depending on the optical configuration and energy chosen. Two multi-axis goniometer experimental stations with area detectors and analyzers are foreseen to enable diffraction, resonant and inelastic scattering experiments, and SAXS/WAXS experiments with high resolution and time resolving capabilities.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence study of the 1.047 eV emission in GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3214-3218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use photoluminescence to study residual transition metal contaminants in GaN layers, which are grown by the sandwich technique either on 6H-SiC substrate or on sapphire substrate. We observe three no-phonon lines in the near infrared optical region at 1.3 eV, 1.19 eV, and 1.047 eV caused by 3d transition metals. The appearance of GaN related host modes in the phonon sideband of these emissions proves that the luminescence centers are incorporated in the hexagonal GaN layers. In this paper we especially focus on the luminescence band with the no-phonon line at 1.047 eV. Temperature dependent photoluminescence measurements reveal an excited state splitting of 8 meV. In photoluminescence excitation spectroscopy we observe a further excited state at 1.6 eV with a fine structure splitting. The appearance of this excited state in the n-type samples gives evidence that the defect must already exist in its luminescent charge state without illumination. The experimental results on the 1.047 eV emission fit to a 4T2(F)→4A2(F) internal electronic transition of a transition metal with a 3d7 electronic configuration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361266
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  • 3
    Electronic Resource
    Electronic Resource
    Dispersion relation, electron and hole effective masses in InxGa1−xAs single quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1481-1485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optical and electrical properties of modulation doped InxGa1−xAs/InP single quantum wells in the composition range 0.56≤x≤0.79. Cyclotron resonance, contactless Shubnikov–de Haas and magnetophotoluminescence experiments are used to obtain two dimensional carrier densities, effective masses of electrons and holes and scattering times. We present data which give evidence for zero magnetic field spin splitting. The dispersion relation for electrons and holes is presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360988
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  • 4
    Electronic Resource
    Electronic Resource
    Chromophore dependence of intramolecular vibrational relaxation: Si–H stretch second overtone versus C–H stretch first overtone in methylsilane (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 6549-6561 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The intramolecular vibrational relaxation (IVR) of an excited Si–H stretch (second overtone) and C–H stretch (first overtone) in methylsilane has been examined by eigenstate resolved infrared spectroscopy. The experiment probes a molecular beam produced in a supersonic expansion, excited by a laser in a power buildup cavity, and detected by a liquid helium cooled silicon bolometer. The Si–H stretch [local mode (3,0,0), both A and E combinations] is compared with the nearly isoenergetic C–H stretch [predominantly the 2ν70 band]. With the calculated density of states almost unchanged, the two modes exhibit very different IVR behavior, which is quantified in terms of the lifetime of the bright states and the coupling between the bright states and the dark states. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474893
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  • 5
    Electronic Resource
    Electronic Resource
    All-in-one spectrometer—A simple experimental setup for measuring transport characteristics in semiconductors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4985-4988 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The characterization of semiconductor heterostructures requires different measurement techniques such as photoluminescence, Shubnikov–de Haas, and cyclotron resonance. We present a simple experimental setup which allows to make use of all these techniques without changing the equipment. There is no need for electrical contacts. The performance is demonstrated on InxGa1−xAs/InP quantum wells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146120
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  • 6
    Electronic Resource
    Electronic Resource
    Fast neutron-induced defects in undoped and iron-doped indium phosphide (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4406-4412 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped and iron-doped InP samples have been investigated by conventional electron paramagnetic resonance measurements before and after fast neutron irradiations. Besides the expected anion antisite PIn defect, they reveal the presence of a broad spectrum that could be ascribed to an anion vacancy Vp on the basis of detailed linewidth and g-shift scalings of the resonance parameters of already identified intrinsic defects in GaP and InP. The irradiated InP:Fe sample shows both the nearest and next-nearest FeIn-Ini pairs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339077
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  • 7
    Electronic Resource
    Electronic Resource
    Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5196-5198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison of the electron paramagnetic resonance spectra obtained in fast neutron- and electron-irradiated GaAs crystals has confirmed the simultaneous presence of the quadruplet and singlet spectra, ascribed previously to As4+Ga and V2−Ga centers. Only in electron-irradiated material, however, are both signals separated by the selective microwave power saturation of the quadruplet. This apparent disparity is ascribed to a difference in the coupling between the two partners in the As4+Ga-V2−Ga associated complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335256
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  • 8
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance monitoring of recovery of fast neutron irradiated GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1332-1335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron paramagnetic resonance spectra of fast neutron irradiated semi-insulating GaAs, recorded at 9 GHz and 4.2 K, have been studied as a function of isochronal thermal anneals. Their decomposition into quadruplet and singlet allows one to determine the main annealing temperatures of the corresponding defects, previously identified as As4+Ga and V2−Ga, which occur respectively at 400 and 600 °C. Comparison with the behavior of implantation damage shows that electrical activation of Be+ implants is correlated with the annealing of the main defects on the cation sublattice. Finally, the linewidth variation of the quadruplet during its decay indicates a concomitant change of the local environment of the As4+Ga center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334535
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  • 9
    Electronic Resource
    Electronic Resource
    A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1811-1817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on temperature-dependent Hall-effect measurements and secondary ion mass spectroscopy on unintentionally doped, n-type conducting GaN epitaxial films. Over a wide range of free carrier concentrations we find a good correlation between the Hall measurements and the atomic oxygen concentration. We observe an increase of the oxygen concentration close to the interface between the film and the sapphire substrate, which is typical for the growth technique used (synthesis from galliumtrichloride and ammonia). It produces a degenerate n-type layer of (approximate)1.5 μm thickness and results in a temperature-independent mobility and Hall concentration at low temperatures (〈50 K). The gradient in free carrier concentration can also be seen in spatially resolved Raman and cathodoluminescence experiments. Based on the temperature dependence of the Hall-effect, Fourier transform infrared absorption experiments, and photoluminescence we come to the conclusion that oxygen produces a shallow donor level with a binding energy comparable to the shallow Si donor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305549
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  • 10
    Electronic Resource
    Electronic Resource
    EL2 and anion antisite defects in plastically deformed GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3381-3385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optical absorption its magnetic circular dichroism (MCD), optically detected electron spin-resonance (ODESR), and electron nuclear double-resonance (ODENDOR) investigations of plastically deformed semi-insulating GaAs. By plastic deformation arsenic antisite defects are created which show a similar ODESR pattern as EL2 defects present in the material prior to deformation. EL2 and the new antisite defects can be distinguished by their different spectral dependence of the MCD. The new antisite defect formation starts at 2% deformation and is investigated as a function of the degree of deformation; additional EL2 defects are not created. With ODENDOR it is shown that the atomistic structure of the EL2 defects changes in the deformed GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346341
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