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  • 1
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 7376-7383 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We recorded rovibrational spectra of the 006+ level of 12C2H2 and the 2131 11−1 level of 13C2H2 in the ground electronic state using a two-photon sequential double resonance technique with a resolution of 15 MHz. Owing to the g/u symmetry of acetylene, the levels that we observe are inaccessible from the ground state by single photon techniques, and observation of these levels is reported here for the first time. Upper state rotational constants were derived from whole band fits of the observed lines, and compare favorably with expected values. Both spectra exhibit signs of local perturbations, and a density of states analysis leads us to believe that we are observing couplings to the full density of vibrational states one would expect from acetylene in this energy region. Despite the high resolution of our spectrometer, and the high excitation energy, no evidence for acetylene hydrogen permutation exchange isomerization (which is predicted to proceed through the vinylidene minimum on the potential) has been observed, implying that the rate of exchange isomerization is more than four orders-of-magnitude below the rate predicted by RRKM (Rice, Ramsperger, Kassel, and Marcus) theory. © 2000 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 10583-10596 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have used infrared–infrared double resonance spectroscopy to record a rovibrational eigenstate resolved spectrum of benzene in the region of the CH stretch first overtone. This experiment is the first of a series aimed at investigating intramolecular vibrational energy redistribution (IVR) in aromatic molecules. The experiment has been carried out in a supersonic molecular beam apparatus using bolometric detection. A tunable resonant cavity was used to enhance the on-beam intensity of the 1.5 μm color center laser used to pump the overtone, and a fixed frequency [R(30)] 13CO2 laser was used to saturate the coinciding ν18 rQ(2) transition of benzene. After assigning the measured lines of the highly IVR fractionated spectrum to their respective rotational quantum number J, analysis of the data reveals that the dynamics occurs on several distinct time scales and is dominated by anharmonic coupling with little contribution from Coriolis coupling. After the fast (∼100 fs) redistribution of the energy among the previously observed "early time resonances" [R. H. Page, Y. R. Shen, and Y. T. Lee, J. Chem. Phys. 88, 4621 (1988) and 88, 5362 (1988)], a slower redistribution (10–20 ps) takes place, which ultimately involves most of the symmetry allowed vibrational states in the energy shell. Level spacing statistics reveal that IVR produces a highly mixed, but nonstatistical, distribution of vibrational excitation, even at infinite time. We propose that this nonintuitive phenomenon may commonly occur in large molecules when the bright state energy is localized in a high-frequency mode. © 2000 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 2569-2569 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 59 (1976), S. 55-58 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 4032-4038 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A molecular beam spectrometer capable of achieving sub-Doppler resolution at 2 eV (∼18 000 cm−1) of vibrational excitation is described and its performance demonstrated using the CH stretch chromophore of HCN. Two high finesse resonant power-buildup cavities are used to excite the molecules using a sequential double resonance technique. A v=0→2 transition is first saturated using a 1.5 μm color center laser, whereupon a fraction of the molecules is further excited to the v=6 level using an amplitude modulated Ti:Al2O3 laser. The energy absorbed by the molecules is detected downstream of both excitation points by a cryogenically cooled bolometer using phase sensitive detection. A resolution of approximately 15 MHz (i.e., three parts in 108) is demonstrated by recording a rotational line in the v=6 manifold of HCN. Scan speeds of up to several cm−1/h were obtained, with signal-to-noise ratios in excess of 100. The high signal-to-noise ratio and a dynamic range of 6×104 means that future experiments to study statistical intramolecular vibrational energy redistribution in small molecules and unimolecular isomerizations can be attempted. We would also like to point out that, with improved metrology in laser wavelengths, this instrument can also be used to provide improved secondary frequency standards based upon the rovibrational spectra of molecules. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6466-6475 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hafnium oxides and hafnium silicate films were investigated as a possible replacement for the SiO2 gate dielectric. Hafnium oxide films were formed by reactive sputtering from a single Hf oxide target in a predominantly Ar atmosphere containing small additions of oxygen. Hafnium silicates were made by adding a He-diluted silane gas for Si incorporation. By changing the silane gas flow, different Si atomic concentrations were incorporated into the Hf oxide films. Depositions were performed with the substrate held at temperatures of 22 °C and 500 °C. The chemical composition of the films was determined with nuclear techniques. Optical reflectivity was used to measure the optical band gap. The film morphology was investigated by transmission electron microscopy (TEM) and the electrical properties were measured with capacitance–voltage and current–voltage measurements using aluminum gate capacitors. TEM and electrical measurement showed that a SiO2 interfacial layer of about 3 nm formed at the Si interface due to the oxidizing sputter ambient. This precluded the growth of Hf based high-K films with small equivalent thickness. After correction for the interfacial oxide layer, the dielectric constant was found to decrease from about 21 for Hf oxide to about 4–5 for the Hafnium silicates with low Hf content (3 at. % Hf and 32 at. % Si). The optical band gap was found to increase from 5.8 eV for Hf oxide to about 7 eV for the silicate films. After annealing at 1000 °C followed by a 300 °C postmetallization anneal, negligible flat band voltage shift were measured on hafnium silicate films and good interface passivation was observed. However, leakage currents increased due to the high temperature processing. © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 7359-7368 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We use infrared-visible double resonance overtone excitation to prepare HOCl molecules in single, well-characterized rotational levels of high OH stretching states just above the dissociation threshold on the ground potential energy surface. Combined with time-resolved laser induced fluorescence (LIF) detection of the OH product, this approach allows us to monitor the dependence of unimolecular dissociation rate on the angular momentum (J,Ka,Kc), total energy, and vibrational character of the state of the reactant molecule as well as on number of dissociation channels available to the OH product. Dissociation rates from single states of the parent molecule are distributed over more than two orders-of-magnitude in a fashion that appears largely independent of the excess energy and the total angular momentum. In several instances we observe a one-order-of-magnitude difference in dissociation rate between states that are nearby in rotational quantum number and/or energy. Superimposed on these state-to-state rate fluctuations is a general trend toward decreasing unimolecular dissociation rate with increasing Ka quantum number. Moreover, the measured rates, which range from 1 to 300 μs−1, are much slower than the predictions of statistical theories. We present a simple model calculation to explain the observed phenomena. © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 123-133 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We use infrared-visible double resonance overtone excitation to promote HOCl molecules to single, well-characterized rotational levels of high OH stretching states just above the HOCl→HO+Cl dissociation threshold on the ground potential energy surface. Double resonance spectra are monitored by laser induced fluorescence detection of the OH dissociation products. We present here the results obtained in the 6ν1 region of HO35Cl where we have studied states with J ranging from 4 to 25, Ka from 0 to 5 and energy up to 300 cm−1 above the dissociation threshold. In the spectra for Ka=0–3 states, the zeroth-order (nOH,nθ,nOCl)=(6,0,0) level is split by mixing with a nearby dark state. Because the two states have very different A rotational constants, their separation increases with Ka, but the effects of the mixing remain observable in the spectrum up to Ka=3. Comparison with preliminary results from HO37Cl, together with analysis of the rotational constants, allows us to identify the perturbing state as (4,4,2). The lack of further strong perturbations compared to the average density of states allows us to infer that most of the matrix elements for couplings between the (6,0,0) bright state and other dark states are less than ∼0.1 cm−1. The average intramolecular vibrational energy redistribution (IVR) rate implied by these matrix elements (2.5×109 s) is two orders of magnitude longer than the predictions of statistical rate theory, indicating that IVR is likely to be the rate limiting step in the unimolecular dissociation process from (6,0,0). The present work provides the spectroscopic foundation for direct time-resolved studies of the unimolecular dissociation dynamics presented in a forthcoming paper. © 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 332-334 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Fermi level at the Ga oxide/GaAs interface has been unpinned by rf plasma cleaning the GaAs surface in H2 and N2. Following plasma cleaning, a Ga oxide film is reactively electron beam deposited onto the substrate. Metal-oxide-semiconductor (MOS) capacitors fabricated on these structures show good high-frequency capacitance-voltage characteristics. This indicates that the density of interface states has been reduced to ∼1011 eV−1 cm−2. The MOS capacitors are found to be stable in air after several months.
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