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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 2569-2569 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: © 2000 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 7359-7368 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We use infrared-visible double resonance overtone excitation to prepare HOCl molecules in single, well-characterized rotational levels of high OH stretching states just above the dissociation threshold on the ground potential energy surface. Combined with time-resolved laser induced fluorescence (LIF) detection of the OH product, this approach allows us to monitor the dependence of unimolecular dissociation rate on the angular momentum (J,Ka,Kc), total energy, and vibrational character of the state of the reactant molecule as well as on number of dissociation channels available to the OH product. Dissociation rates from single states of the parent molecule are distributed over more than two orders-of-magnitude in a fashion that appears largely independent of the excess energy and the total angular momentum. In several instances we observe a one-order-of-magnitude difference in dissociation rate between states that are nearby in rotational quantum number and/or energy. Superimposed on these state-to-state rate fluctuations is a general trend toward decreasing unimolecular dissociation rate with increasing Ka quantum number. Moreover, the measured rates, which range from 1 to 300 μs−1, are much slower than the predictions of statistical theories. We present a simple model calculation to explain the observed phenomena. © 1999 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 10583-10596 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have used infrared–infrared double resonance spectroscopy to record a rovibrational eigenstate resolved spectrum of benzene in the region of the CH stretch first overtone. This experiment is the first of a series aimed at investigating intramolecular vibrational energy redistribution (IVR) in aromatic molecules. The experiment has been carried out in a supersonic molecular beam apparatus using bolometric detection. A tunable resonant cavity was used to enhance the on-beam intensity of the 1.5 μm color center laser used to pump the overtone, and a fixed frequency [R(30)] 13CO2 laser was used to saturate the coinciding ν18 rQ(2) transition of benzene. After assigning the measured lines of the highly IVR fractionated spectrum to their respective rotational quantum number J, analysis of the data reveals that the dynamics occurs on several distinct time scales and is dominated by anharmonic coupling with little contribution from Coriolis coupling. After the fast (∼100 fs) redistribution of the energy among the previously observed "early time resonances" [R. H. Page, Y. R. Shen, and Y. T. Lee, J. Chem. Phys. 88, 4621 (1988) and 88, 5362 (1988)], a slower redistribution (10–20 ps) takes place, which ultimately involves most of the symmetry allowed vibrational states in the energy shell. Level spacing statistics reveal that IVR produces a highly mixed, but nonstatistical, distribution of vibrational excitation, even at infinite time. We propose that this nonintuitive phenomenon may commonly occur in large molecules when the bright state energy is localized in a high-frequency mode. © 2000 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 123-133 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We use infrared-visible double resonance overtone excitation to promote HOCl molecules to single, well-characterized rotational levels of high OH stretching states just above the HOCl→HO+Cl dissociation threshold on the ground potential energy surface. Double resonance spectra are monitored by laser induced fluorescence detection of the OH dissociation products. We present here the results obtained in the 6ν1 region of HO35Cl where we have studied states with J ranging from 4 to 25, Ka from 0 to 5 and energy up to 300 cm−1 above the dissociation threshold. In the spectra for Ka=0–3 states, the zeroth-order (nOH,nθ,nOCl)=(6,0,0) level is split by mixing with a nearby dark state. Because the two states have very different A rotational constants, their separation increases with Ka, but the effects of the mixing remain observable in the spectrum up to Ka=3. Comparison with preliminary results from HO37Cl, together with analysis of the rotational constants, allows us to identify the perturbing state as (4,4,2). The lack of further strong perturbations compared to the average density of states allows us to infer that most of the matrix elements for couplings between the (6,0,0) bright state and other dark states are less than ∼0.1 cm−1. The average intramolecular vibrational energy redistribution (IVR) rate implied by these matrix elements (2.5×109 s) is two orders of magnitude longer than the predictions of statistical rate theory, indicating that IVR is likely to be the rate limiting step in the unimolecular dissociation process from (6,0,0). The present work provides the spectroscopic foundation for direct time-resolved studies of the unimolecular dissociation dynamics presented in a forthcoming paper. © 1999 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 6549-6561 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The intramolecular vibrational relaxation (IVR) of an excited Si–H stretch (second overtone) and C–H stretch (first overtone) in methylsilane has been examined by eigenstate resolved infrared spectroscopy. The experiment probes a molecular beam produced in a supersonic expansion, excited by a laser in a power buildup cavity, and detected by a liquid helium cooled silicon bolometer. The Si–H stretch [local mode (3,0,0), both A and E combinations] is compared with the nearly isoenergetic C–H stretch [predominantly the 2ν70 band]. With the calculated density of states almost unchanged, the two modes exhibit very different IVR behavior, which is quantified in terms of the lifetime of the bright states and the coupling between the bright states and the dark states. © 1997 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 4032-4038 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A molecular beam spectrometer capable of achieving sub-Doppler resolution at 2 eV (∼18 000 cm−1) of vibrational excitation is described and its performance demonstrated using the CH stretch chromophore of HCN. Two high finesse resonant power-buildup cavities are used to excite the molecules using a sequential double resonance technique. A v=0→2 transition is first saturated using a 1.5 μm color center laser, whereupon a fraction of the molecules is further excited to the v=6 level using an amplitude modulated Ti:Al2O3 laser. The energy absorbed by the molecules is detected downstream of both excitation points by a cryogenically cooled bolometer using phase sensitive detection. A resolution of approximately 15 MHz (i.e., three parts in 108) is demonstrated by recording a rotational line in the v=6 manifold of HCN. Scan speeds of up to several cm−1/h were obtained, with signal-to-noise ratios in excess of 100. The high signal-to-noise ratio and a dynamic range of 6×104 means that future experiments to study statistical intramolecular vibrational energy redistribution in small molecules and unimolecular isomerizations can be attempted. We would also like to point out that, with improved metrology in laser wavelengths, this instrument can also be used to provide improved secondary frequency standards based upon the rovibrational spectra of molecules. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2113-2121 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate the effects of microstructure of the Schottky characteristics of WSix contacts to n-type GaAs, cross-sectional transmission electron microscopy, x-ray diffraction, and secondary-ion mass spectrometry have been used to study the interfacial and bulk film microstructures. The barrier heights and ideality factors of WSi0.1 and WSi0.6 contacts were obtained by forward current-voltage and capacitance-voltage measurements. These Schottky characteristics were found to be unrelated to the bulk film microstructure, but closely related to the interfacial microstructure at the WSix/GaAs interfaces. Both the WSi0.1/GaAs and WSi0.6/GaAs interface morphologies were observed to be stable and remain smooth during annealing at 800 °C for 10 min, while a rough interface with W protrusions and Ga and As out-diffusion was observed in two-layer W/WSi0.6 contacts. The stability of the WSix interfacial microstructure is suggested to depend on both the chemical stability of the WSix films with GaAs and the intervening oxides between WSix and GaAs. Nontrivial amounts of W and Si were observed to diffuse from the WSi0.1 film into the GaAs substrate during annealing at 800 °C for 10 min. Although these in-diffused impurities in the GaAs substrate do not seem to affect the Schottky characteristics after the 800 °C annealing, they could be a potential problem in long-term stability. Of the three WSix film compositions, the single-layer WSi0.6 films were found to have the least W and Si in-diffusion and thus the best thermal stability.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 582-590 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As part of the investigation of the use of AuNiGe as the ohmic contact to n-type GaAs at a high integration level, cross-sectional transmission electron microscopy was used to explore the uniformity at the metal/GaAs interface and the thermal stability of the AuNiGe contact after the ohmic contact formation. A close relation between spread of the contact resistance and nonuniformity of the interfacial microstructure of the contact was found. Deposition of 5-nm-thick Ni as the first layer of the AuNiGe ohmic contact significantly reduced the spread of the contact resistance and led to the formation of a uniform interface without large protrusions. The improvement in uniformity of compound distribution and the reduction of interface roughness are believed to be due to a change in the sequence of alloying reactions, compared to those in the contact without a Ni first layer. This suggests an ideal interface structure for a low resistance AuNiGe ohmic contact after alloying to be a uniform two layer structure: a high density of the NiAs(Ge) grains contacting the GaAs substrate, and a homogeneous β-AuGa phase close to the top surface. However, due to the existence of β-AuGa phases with a low melting point of around 375 °C, the thermal stability of the contact at 400 °C is of serious concern. Segregation of the NiAs(Ge) grains was observed after annealing at 400 °C for 10 h, which reduced the contact areas between the NiAs(Ge) grains and GaAs. During subsequent annealing at this temperature for up to 90 h, liquidlike flow of the β-AuGa phase was observed which deteriorated the interface uniformity, causing an increase in contact resistance. A typical contact edge slide distance after contact alloying at 440 °C for 2 min was measured to be 0.2 μm and the longest distance among specimens examined was 0.47 μm. This edge deterioration could limit the use of the AuNiGe contact in GaAs submicron devices.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4812-4820 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Barrier heights of refractory W, WSix, and WAlx Schottky contacts deposited on n-GaAs with different surface treatments have been electrically characterized by current-voltage, capacitance-voltage, and internal photoemission measurements. Internal photoemission measurements indicate that the Fermi level pins approximately at midgap (Φn (approximately-equal-to)0.7–0.8 eV). The current-voltage barrier heights were consistent with internal photoemission for diodes with little oxide at the GaAs/metal interface. For an oxide layer of about 2.5 nm, current-voltage barrier heights as high as 0.9 eV were observed. Capacitance-voltage barrier heights were found to be 0.9–1 eV with a weak dependence on interface oxide. A theoretical model was developed to explain these results. A large density of states (5×1013–1014/cm2) at the GaAs/metal interface which exchanges charge mainly with the metal appears to explain well our experimental capacitance-voltage and current-voltage data.
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs metal-semiconductor field-effect transistors (MESFETs) and other integrated-circuit elements were characterized by including extensive process test sites on wafers with digital logic and memory circuits. A self-aligned, refractory-gate enhancement/depletion (E/D) process was employed which included 47SiF+ channel and source/drain implants, capless arsenic overpressure furnace annealing, WSi0.11 gate metal with in situ sputter cleaning, Ni-Au-Ge ohmic contacts, Si3N4 or SiO2 insulation, and Ni-Au wiring. On-water threshold voltage standard deviations as low as 31 mV for 1-μm E-FETs and 49 mV for 1-μm D-FETs were measured using 51-mm standard semi-insulating liquid-encapsulated Czochralski GaAs substrates. Threshold voltage control from wafer to wafer was of order 100 mV. Schottky diode barrier height was about 0.73 eV with an ideality of 1.2, although small self-aligned Schottky gates often showed excess conduction believed to occur at the gate edges. FET square-law coefficient, subthreshold leakage, gate capacitance, backgating, contact resistance, and wiring and insulation characteristics were also measured and found satisfactory. Fully functional 1-μm gate E/D MESFET circuits including a 4×4 bit multiplier, a 4×4 crosspoint switch, a 448-bit static RAM, and an integrated photodiode amplifier were demonstrated.
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