Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
57 (1985), S. 1332-1335
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electron paramagnetic resonance spectra of fast neutron irradiated semi-insulating GaAs, recorded at 9 GHz and 4.2 K, have been studied as a function of isochronal thermal anneals. Their decomposition into quadruplet and singlet allows one to determine the main annealing temperatures of the corresponding defects, previously identified as As4+Ga and V2−Ga, which occur respectively at 400 and 600 °C. Comparison with the behavior of implantation damage shows that electrical activation of Be+ implants is correlated with the annealing of the main defects on the cation sublattice. Finally, the linewidth variation of the quadruplet during its decay indicates a concomitant change of the local environment of the As4+Ga center.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.334535
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