ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Superconducting Nb–In0.53Ga0.47As/In0.77Ga0.23As/InP–Nb contacts with an electrode separation of 450 nm were fabricated. Due to the high mobility of the two-dimensional electron gas, the current transport can be described within the clean limit regime. At 0.3 K a critical current of 3.8 μA was obtained for 6 μm wide contacts leading to a characteristic voltage of 190 μV. The decrease of the critical current with increasing temperature can be explained by a theory developed by A. Chrestin, T. Matsuyama, and U. Merkt [Phys. Rev. B 49, 498 (1994)], which takes δ-shaped barriers at the superconductor/semiconductor interfaces into account. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120410
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