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  • 1
    Electronic Resource
    Electronic Resource
    Cathodoluminescence and photoluminescence in the core region of Bi12GeO20 and Bi12SiO20 crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7186-7190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence and photoluminescence of Bi12SiO20 and Bi12GeO20 samples are studied. Both kinds of samples show a dark orange central part or core. Emissions in the blue, green, and red spectral regions are observed. The 640 nm band is the predominant feature in the core emission. The evolution of this band during electron irradiation suggests possible emission mechanisms. In addition, two infrared emissions at about 915 and 1390 nm are detected. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361434
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular radiative transport. II. Monte-Carlo simulation (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 8950-8965 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The theory of radiative transport allows in principle the accurate calculation of the fluorescence intensity and anisotropy decays, and of the fluorescence spectrum and macroscopic quantum yield, under given conditions. However, most of the coefficients of the theoretical expressions are in general not amenable to analytic form, and even their numeric computation is quite difficult. Given the probabilistic nature of the underlying processes of absorption and emission, a Monte-Carlo (MC) simulation built upon the basic theoretical equations is particularly well suited for the task. In this work, we discuss and carry out detailed simulations for a realistic system (rhodamine 101 in ethanol) in a finite three-dimensional volume that reproduces a common fluorescence cell. The two usual geometries of detection are considered: front face and right angle. The MC simulation method developed allows, for the first time, the accurate calculation of the effect of radiative transport on fluorescence intensity and anisotropy decays, time-resolved and steady-state spectra, as well as on the values of the macroscopic quantum yield and steady-state anisotropy. Because the spatial distribution of each generation of excited molecules can also be obtained with this method, a direct and clear picture of the spatial evolution of the excitation is also obtained. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471629
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  • 3
    Electronic Resource
    Electronic Resource
    Stochastic theory of molecular radiative transport (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 3022-3028 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The radiative transport (or radiative migration) of electronic excitation energy in a molecular ensemble is analyzed from a stochastic point of view. This approach yields results considerably more general than those of previous treatments, where successive hops are (implicitly) assumed to be uncorrelated, while they constitute in fact a Markov process. The time evolution of the fluorescence intensity emitted by the molecular ensemble, in response to excitation by an external beam of linearly polarized and essentially monochromatic light is obtained. In contrast to the previous treatments, only known parameters are required. The time evolution of the fluorescence anisotropy is also obtained for the first time. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470491
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1−xSb (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3132-3134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use transmission spectroscopy to determine the energy gap for the AlxIn1−xSb alloy system in the Al concentration range from 0% to 25% from cryogenic to room temperature. The samples are epitaxial layers grown by molecular beam epitaxy on GaAs substrates. Our room temperature results are compared to those from two earlier studies. In our Al concentration range, we find a linear change of energy gap with alloy lattice constant. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122696
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of substrate temperature on Si compensation in δ-doped InSb and AlxIn1−xSb grown by molecular beam epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 205-208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dopant compensation was studied for Si δ-doped InSb samples grown on GaAs (001) substrates. Hall-effect measurements indicate a sharp decline in electron density with increased substrate temperature when doping and cap-layer growth occur on the pseudo-(1×3) surface reconstruction, while little temperature dependence is observed for doping and growth on the c(4×4) surface reconstruction. Hall-effect measurements on samples grown with the substrate temperature differing between the dopant and cap layers rule out simple diffusion and desorption of Si atoms, and, along with secondary-ion mass spectrometry measurements, suggest that the temperature dependence of the carrier density results from compensation occurring primarily during growth of the cap layer. Similar behavior was observed in AlxIn1−xSb samples δ-doped with Si. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368018
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  • 6
    Electronic Resource
    Electronic Resource
    Spatially variable reaction in the formation of anodically grown porous silicon structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 590-592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In porous silicon formations there is an increase of dissolution rate at the fluorine-covered sites of the silicon surface due to the presence of excess electrons coming from oxidation of molecular hydrogen at the passivated (hydrogen-covered) sites. The dissolution rate increase in the presence of excess charge at the fluorine-covered sites is experimentally measured and a theoretical investigation is carried out by a semiempirical Hartree–Fock calculation. This spatially variable dissolution generates the porous silicon surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360577
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  • 7
    Electronic Resource
    Electronic Resource
    Early bifurcation in rotating fluid flow with free surface studied by axisymmetric numerical simulations (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 8 (1996), S. 3057-3062 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simulations of a fluid rotating inside a partially open cylindrical cavity, performed by numerical solution of the unsteady axisymmetric Navier–Stokes equations, are presented. The configuration consists of a cylindrical vessel holding the fluid, which is entrained into motion by a rotating lid. This one is a coaxial disk in contact with the fluid surface but without covering it entirely. The study focuses on the occurrence of time-dependent flow, more specifically, the first transition to unsteadiness, by considering cavity cases with different amounts of free surface, for a fixed aspect ratio. By following the time evolution of a few arbitrarily chosen dynamical variables as a function of the Reynolds number, the location of this first Hopf bifurcation is obtained for a collection of cavity cases. Results show a rather strong influence of the free surface both on the onset of the unsteadiness and on the dynamical features of the flow. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869079
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  • 8
    Electronic Resource
    Electronic Resource
    Infrared analysis of deuterated carbon–nitrogen films obtained by dual-ion-beam-assisted-deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1065-1067 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isotopic effect on the infrared spectra is used to determine the existence of nitrogen–hydrogen bonds in amorphous carbon–nitrogen alloys (a-CNx) prepared by dual-ion-beam-assisted deposition. The deuteration experiments and the evolution of the infrared spectra upon atmospheric exposure show that hydroxyls are incorporated from atmospheric moisture. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122115
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of excitonic transitions in InSb quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of interband exciton transitions in InSb/AlxIn1−xSb multi-quantum-well samples. The exciton peaks are identified with the use of a simple quantum well model. The strain present in the InSb wells alters the spectrum significantly from that for unstrained III–V materials and makes it possible to use the exciton spectrum in determining the band offset. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122097
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  • 10
    Electronic Resource
    Electronic Resource
    Identification of structural changes in carbon–nitrogen alloys by studying the dependence of the plasmon energy on nitrogen concentration (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3521-3523 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of nitrogen on the valence-electron plasmon energy in amorphous carbon–nitrogen alloys (a-C1−xNx) is used to identify structural changes in the material. The samples were prepared by dual-ion-beam-assisted deposition and studied in situ by x-ray photoemission spectroscopy. The plasmon energy of the alloy goes through a maximum above 15–20 at.% nitrogen concentration. This behavior is correlated with structural changes obtained in a semiempirical quantum chemical calculation on graphite-like carbon clusters, randomly substituted by nitrogen. At that concentration, the geometry optimization shows that the graphite-like conformation is unstable against the buckling of the structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122823
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