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  • 1
    Electronic Resource
    Electronic Resource
    Interdiffusion, reaction, and stability in a thin film iron-aluminium bilayered system (1989)
    Springer
    Applied physics 48 (1989), S. 481-488 
    Details
    ISSN: 1432-0630
    Keywords: 68.55N ; 68.55 ; 68.35
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this work we describe the results of Rutherford backscattering spectrometry, sheet resistivity measurements, X-ray diffractometry and conversion electron Mössbauer spectroscopy performed on thin film Fe-Al bilayered samples submitted to high vacuum furnace annealing. Isothermal anneals were performed at 570 K for time intervals ranging from 60 to 600 min. It is demonstrated that the diffusion of Al into Fe is smaller than the diffusion of Fe into Al for temperatures below 600 K. Sequential isochronous thermal anneals of 60 min were performed at temperatures ranging from 570 to 870 K, in order to study the stability of the formed phases. The stable Fe2Al5 intermetallic compound formed at 570 K decomposes at about 650 K, and the FeAl6 intermetallic compound appears at temperatures around 750 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619722
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of the composition of surface layers in high-temperature superconducting materials by the combination of Rutherford backscattering spectrometry and nuclear resonance reaction (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 400-401 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry combined to the 16O(α, α) nuclear resonance (E=3.045 MeV) are used to determine the stoichiometry of Y-Ba-Cu-O superconducting samples. The oxygen depth profile is also measured at thin surface layers of the compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343397
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  • 3
    Electronic Resource
    Electronic Resource
    Raman scattering and nuclear surface characterization of aged porous silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3335-3341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aged porous silicon layers (∼1 μm thick) have been characterized both by optical spectroscopy (Raman scattering and photoluminescence) and by nuclear surface techniques (Rutherford backscattering, elastic recoil detection, and nuclear reaction analysis). Samples with 85% and 70% porosity were analyzed after exposure to air for 1 month. Both these aged porous silicon layers emit visible light, but their luminescence shows dissimilar spectral features while their Raman scattering suggests a dissimilar microstructure. Chemical analyses indicate the presence of carbon and hydrogen at the porous surface, besides a surprisingly different oxygen concentration. A correlation between the structural and compositional results is attempted to account for the observed light emission spectra. In particular, the relative blue shift of the luminescence peak of sample with lower porosity is attributed to the stronger consumption of silicon nanocrystals operated by the silicon oxide formation during the aging process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360027
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  • 4
    Electronic Resource
    Electronic Resource
    On the carbon incorporation into a-SiC:H films with low carbon content (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1531-1533 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we report on carbon incorporation into a-SiC:H films with low carbon content deposited from SiH4:CH4:H2 gaseous mixtures. In the case of films deposited without H2 dilution, carbon incorporation mainly as CH3 groups, was determined. Increasing H2 dilution was found to induce a selective incorporation of radicals that affects the density of C—H bonds, thus reducing the mean number of carbon bonded hydrogen atoms per carbon atom. Our observations allowed the estimation of the oscillator strength for the C—H stretching mode of CH3 groups in undiluted a-SiC:H films, obtaining ΓC—H(CH3)=9×10−23 cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351224
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  • 5
    Electronic Resource
    Electronic Resource
    Nanoscale friction and wear mechanisms at the interface between a boron carbide film and an atomic force microscope tip (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1118-1122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The investigation of the modifications of the nanoscale tribological properties of boron carbide films induced by the energy dissipation at the interface between the atomic force microscope tip and the film surface is presented. It is shown that the microscope tip induces a modification at the surface that results in a decrease on the friction forces between the tip and the film surface. The influences of the friction coefficient, the scanning speed, and the applied normal force on the film wear are investigated. Using a microscopic model, the dissipated energy at the tip–surface interface during scanning was estimated. The influence of the dissipated energy on the nanoscale wear is presented and a strong correlation between friction and wear, in nanoscale, is shown. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371988
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  • 6
    Electronic Resource
    Electronic Resource
    The role of capillary condensation of water in the nanoscale friction and wear properties of boron carbide films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 679-682 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of capillary condensation of water at the atomic force microscope tip and boron carbide film surface on the friction forces and wear of the films is studied by force microscopy. It is shown that friction and wear are strongly dependent on the humidity. At low humidity no wear at the film surface is verified, while at high humidities constant wear rates are measured. The results show that the wear mechanisms of amorphous boron carbide films are highly dependent on the environmental humidity. A wear model based on a film surface interaction with the air moisture induced by the dissipated energy at the microscope tip–surface interface while in relative motion is presented. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373720
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  • 7
    Electronic Resource
    Electronic Resource
    Dopants redistribution during titanium-disilicide formation by rapid thermal processing (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1228-1230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Redistribution of implanted As (5×1015 cm−2, 150 keV) and Sb (1×1015 cm−2 , 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly the rapid thermal processing parameters, low resistance uniform silicides layers (typically 14 μΩ cm) were obtained, and dopant loss by out-diffusion and redistribution of the dopant were made negligible. High peak concentrations of dopant within silicon substrate, beneath the silicide, were obtained for all processing times.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338177
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  • 8
    Electronic Resource
    Electronic Resource
    Correlation between nano-scale friction and wear of boron carbide films deposited by dc-magnetron sputtering (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1317-1319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analysis of friction and wear of boron carbide films scanned with a light load atomic force microscope Si3N4 tip is presented. The results show that nano-scale friction and wear are strongly correlated, and that friction decreases fast at the beginning of the scratching tests. We propose that the energy dissipated at the tip-surface interface during scanning induces the formation of a lubricant material at the surface of the boron carbide film that reduces friction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124687
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  • 9
    Electronic Resource
    Electronic Resource
    Infrared analysis of deuterated carbon–nitrogen films obtained by dual-ion-beam-assisted-deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1065-1067 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The isotopic effect on the infrared spectra is used to determine the existence of nitrogen–hydrogen bonds in amorphous carbon–nitrogen alloys (a-CNx) prepared by dual-ion-beam-assisted deposition. The deuteration experiments and the evolution of the infrared spectra upon atmospheric exposure show that hydroxyls are incorporated from atmospheric moisture. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122115
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  • 10
    Electronic Resource
    Electronic Resource
    Study of nitrogen implanted amorphous hydrogenated carbon thin films by variable-energy positron annihilation spectroscopy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2451-2453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hard amorphous hydrogenated carbon (a-C:H) films deposited by self-bias glow discharge were implanted at room temperature with 70 keV nitrogen ions at fluences between 2.0 and 9.0×1016 N/cm2. The implanted samples were analyzed by positron Doppler broadening annihilation spectroscopy to determine the voids distribution. For samples implanted with 2.0×1016 N/cm2 the defect distribution is broader than the vacancies depth profile predicted by Monte Carlo simulation. For higher fluences we observed a reduction of the defect density. These results are discussed in terms of a competition between two processes: ion induced defects and structural modifications induced in the films due to ion implantation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364296
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