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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 80 (1958), S. 2132-2141 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2033-2035 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Melt-spun ribbons of tetragonal Pr2Fe14B exhibit favorable hard magnet characteristics. Technically relevant materials based on this compound, however, generally contain a certain amount of soft magnetic α-Fe or Fe3−xBx for remanence enhancement through exchange coupling. The nominal off-stoichiometric compositions lead to metallurgical complications, which are not easily resolvable by standard phase identification techniques such as x-ray diffraction and thermal magnetic analysis. As a viable alternative, 57Fe-Mössbauer spectroscopy can be used to delineate individual Fe sites. To provide a basis for such an approach, this report gives Mössbauer parameters including hyperfine magnetic field, isomer shift, and quadrupole splitting as obtained from a single-phase melt-spun Pr2Fe14B ribbon. © 2001 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1589-1599 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large-area two-color image sensor array made with amorphous silicon (a-Si:H) technology is described. Mesa-isolated double-junction p-i-n-i-p a-Si:H sensors discriminate the two spectral bands—blue/green and red—according to the polarity of the applied voltage bias. The 512×512 element active-matrix array with 75 μm pixel pitch is addressed using a-Si:H thin-film switching transistors. Under steady state illumination, the array exhibits a linear response, good color separation, and good spatial response as measured by the line-spread function, so that images obtained with the array are clear and sharp. The response to transient illumination exhibits image lag and a strong dependence of the signal on integration time, both of which depend on the bias polarity. Switching the bias voltage also induces strong transient properties. These effects are attributed to the back-to-back diodes, which act as capacitative dividers in the generation and readout of the signal. The transient effects compromise the practical application of the color sensors for video color imaging. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3345-3355 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The factors determining the x-ray sensitivity of HgI2 and PbI2 as direct detector materials for large area matrix addressed x-ray image sensors are described, along with a model to explain their different properties. The imaging studies are made on test arrays with 512×512 pixels of size 100 μm. The x-ray sensitivity and spatial resolution are reported, along with measurements of the various mechanisms that influence the sensitivity, such as charge collection, x-ray absorption, fill factor, and image lag. The spatial resolution of PbI2 decreases with increasing film thickness, but this effect is not observed in HgI2. The x-ray response data are used to compare the sensitivity to the theoretical values for the ionization energy and to identify the various loss mechanisms. We find that the sensitivity of HgI2 can be explained by a few small and well characterized loss factors. This material exhibits good spatial resolution, high fill factor, and high charge collection. PbI2 films exhibit lower sensitivity, principally attributable to a very large image lag. We propose that the x-ray response of the two materials is distinguished by their different depletion layer properties, and present a model that accounts for the sensitivity, image lag, and spatial resolution of PbI2. © 2002 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 610-612 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-change wax-based printed masks, in place of conventional photolithography, were used to fabricate hydrogenated amorphous silicon thin-film transistors (TFTs). Wax-mask features with a minimum feature size of ∼20 μm were achieved using an acoustic-ink-printing process. Both discrete and matrix addressing structured bottom-gate TFTs with source–drain contacts overlapping the channel were created using a four-mask process. The TFTs had current–voltage characteristics comparable to photolithographically patterned devices, with mobility of 0.6–0.9 cm2/V s, threshold voltage of 2–3 V, and on/off ratios exceeding 107 for devices with channel lengths below 50 μm. © 2002 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4193-4195 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large-area image capture device using an organic sensor is reported. The 512×512 pixel array, with 100×100 micrometer pixel size, combines amorphous silicon matrix addressing with a continuous organic sensor. The bilayer sensor comprises a tetraphenyldiamine hole transport layer on top of a benzimidazole perylene generator layer. This combination provides high sensitivity across the visible with low dark current. We present imaging properties and in particular show that the lateral charge transport between pixels is small, and that the effective fill factor is ∼90%. X-ray imaging with a phosphor converter is demonstrated. © 2001 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1334-1336 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An integrated color image sensor, made entirely with amorphous silicon (a-Si:H) large-area technology, is presented. The a-Si:H based sensor is a double-junction p-i-n-i-p photodiode that discriminates two spectral bands according to the bias voltage. The active-matrix addressed array has 512×512 pixels with 75 μm pixel pitch and uses thin-film transistors as pixel switches. The array structure and the spectral response are discussed, and color images taken by the system using two bias voltages demonstrate the compatibility of color sensors with large-area active-matrix addressing techniques. © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 34 (2001), S. 330-335 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The work in this paper is a systematic study of the application of collimating and slightly focusing polycapillary optics to the X-ray crystallographic structure determination of egg-white lysozyme using two different sources: a standard rotating anode source and a low-power table-top microfocusing source. For the rotating anode source, a series of measurements comparing duplicate data sets obtained from the same individual crystal are summarized. Intensity and data quality are discussed for measurements with a pinhole collimator, a collimating polycapillary optic and a focusing polycapillary optic. The collected data were analyzed using conventional analysis software; limitations of the use of conventional analysis software for focused beams are discussed. Two data sets were collected using the low-power source and collimating optics, and three data sets using a lower-power source and focusing optics with three different limiting apertures.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1546-170X
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Medicine
    Notes: [Auszug] Huntington disease is an autosomal dominant neurodegenerative disease with no effective treatment. Minocycline is a tetracycline derivative with proven safety. After ischemia, minocycline inhibits caspase-1 and inducible nitric oxide synthetase upregulation, and reduces infarction. As caspase-1 ...
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 35 (2000), S. 3641-3646 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effect of thermomechanical treatments (TMT) on the microstructuresand properties of Cu-1.5Ni-0.3Si-0.03P-0.05Mg leadframe alloy wasinvestigated. The Cu-base leadframe alloy was received as hot rolledplates with 8 mm thickness. The hot rolled plates were solutiontreated at 700°C or 800°C for 1 hour, and coldrolled with 40–85% reduction, then followed by aging treatment at450°C. The leadframe alloy solution treated at 800°Cshowed larger grain size of 15 μm comparing with the grain size of10 μm in leadframe alloy solution treated at 700°C. Theleadframe alloy with smaller grain size of 10 μm showed highertensile strength and lower electrical resistivity than that withlarger grain size of 15 μm. The dislocation density increased withincreasing reduction ratio of cold rolling from 40% to 85% andresulted in finer Ni2Si precipitates. Tensile strength increasedand electrical resistivity decreased with increasing reduction ratioof cold rolling due to the formation of finer Ni2Si precipitates.Two types of thermomechanical treatments were performed to enhance theproperties of leadframe alloy. One type of thermomechanical treatmentis to refine the grain size through the overaging, cold rollingfollowed by recrystallization. The recrystallization process improvedthe tensile strength to 540 MPa and elongation to 15% by reducing thegrain size to 5 μm. The other type of thermomechanical treatmentis to refine the precipitate size by two-step aging process. Thetwo-step aging process increased the tensile strength to 640 MPa andreduced the electrical resistivity to1.475 × 10−8 Ωm by reducing the size of Ni2Si precipitates to 4 nm.
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