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  • 1
    Electronic Resource
    Electronic Resource
    Defects in Hydrogenated Amorphous Silicon (1991)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 21 (1991), S. 1-21 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.21.080191.000245
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  • 2
    Electronic Resource
    Electronic Resource
    Hydrogen incorporation in silicon thin films deposited with a remote hydrogen plasma (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1872-1874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented on the effects of growth conditions on hydrogen incorporation in Si thin films deposited with a remote hydrogen plasma. Oxygen contamination of the films was significantly reduced by replacement of the quartz tube that is commonly used to contain the hydrogen plasma with an alumina tube, with a concomitant increase in the electrical conductivity of P-doped a-Si:H films. Hydrogen incorporation was examined with a remote deuterium plasma and downstream injection of SiH4. As the gas flow ratio D2:SiH4 increases, the ratio D:H in the film changes as a consequence of the increasing flux of D at the growing surface. High silane dilution also promotes the formation of microcrystalline silicon, which itself affects H incorporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101264
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  • 3
    Electronic Resource
    Electronic Resource
    Dependence of optimal growth temperature on carbon content in hydrogenated amorphous silicon carbide alloys (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1759-1761 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature (TE) above which optimal growth takes place during plasma-enhanced chemical vapor deposition of undoped hydrogenated amorphous silicon carbide alloys from methane/silane gas mixtures is shown to increase with the relative gas-phase mole fraction of methane XCH4. The increase in TE from ≈220 °C for XCH4=0.0 to ≈350 °C for XCH4=0.90 at 2 W rf power is attributed to a corresponding decrease in the rate of hydrogen diffusion with carbon incorporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102209
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  • 4
    Electronic Resource
    Electronic Resource
    Behavior of excess As in nonstoichiometric Si-doped GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5841-5846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Si doping efficiency (≡[e−]/[Si]) in homoepitaxial GaAs has been measured as a function of molecular beam epitaxial growth conditions (As pressure, substrate temperature, and growth rate) and post-growth thermal annealing conditions. The doping efficiency decreases from one under optimal growth conditions to almost zero: (1) exponentially with inverse substrate temperature below 400 °C and (2) as a power law in the As4-to-Ga beam-equivalent fluence ratio above unity. The doping efficiency of nonoptimally grown films increases from almost zero to near one upon post-growth thermal annealing above 650 °C with slower than exponential kinetics. These changes are attributed to charge trapping into and release from, respectively, excess-As-related defects, which are incorporated during growth and removed by out-diffusion during annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350479
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  • 5
    Electronic Resource
    Electronic Resource
    Interstitial Li doping of a-Si:H (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2272-2281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the process of interstitial doping of hydrogenated amorphous silicon (a-Si:H) by Li in-diffusion and thermal annealing after Li+ implantation using secondary ion mass spectrometry, dc dark conductivity [σ(T)], electron-spin resonance, and photothermal deflection spectroscopy measurements. All Li-doped a-Si:H samples were characterized by an inhomogeneous distribution of Li atoms. Doping by Li in-diffusion at 230 °C resulted in a Li-rich (up to 1021 cm−3) region at both sample interfaces, a large increase in σ(300 K), and the creation of deep paramagnetic (g=2.0061±0.0002, ΔHp.p.=5.4±0.4 G) defects with defect densities (up to 2×1018 cm−3) proportional to the interfacial Li concentration. Li+ implantation of a-Si:H at 373 K resulted in the creation of deep paramagnetic (g=2.0056±0.001, ΔHp.p.=6.0±0.5 G) defects with defect densities (up to 2×1018 cm−3) proportional to the implanted Li+ dose. Isochronal vacuum annealing of Li+-implanted a-Si:H up to 545 K resulted in an exponential increase of σ(300 K) and an activated (Ea=+0.32 eV) decrease of the spin density with increasing anneal temperatures. Both Li in-diffused and annealed Li+-implanted a-Si:H films displayed thermal equilibration behavior similar to that characteristic of P-doped a-Si:H, which suggests that the defect compensation model of substitutional doping of a-Si:H is also applicable to the case of interstitial doping. However, the defect structure of a-Si:H doped by Li in-diffusion is significantly different than that of both undoped and P-doped a-Si:H due to the precipitation of Li at the interfaces of heavily Li-doped a-Si:H. We discuss the origin of this behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342841
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  • 6
    Electronic Resource
    Electronic Resource
    Interfacial defect creation by interstitial lithium doping of amorphous hydrogenated silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 505-507 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study interstitial doping in amorphous hydrogenated silicon (a-Si:H) by indiffusion of lithium at 230 °C using secondary ion mass spectrometry, photothermal deflection spectroscopy (PDS), and electron spin resonance. Lithium is distributed nonuniformly in the films with peak concentrations within 300 nm of either interface. Lithium doping introduces up to 1018 paramagnetic defects per cc in a-Si:H (g=2.0061, ΔHp.p. =5.2 G), equal to the concentration of deep defects created as measured by PDS. The nature of these defects is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99881
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  • 7
    Electronic Resource
    Electronic Resource
    Excimer-laser-induced crystallization of hydrogenated amorphous silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2222-2224 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103897
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  • 8
    Electronic Resource
    Electronic Resource
    Si doping efficiency in GaAs grown at low temperatures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2818-2820 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The doping efficiency of Si (≡[e−]/[Si]) has been measured as a function of substrate temperature Ts, beam-equivalent As4-to-Ga fluence ratio R, and beam supply conditions to probe the kinetic limitations of low-temperature GaAs homoepitaxy. The doping efficiency decreases strongly with increasing R at low Ts due, we suggest, to electron trapping at defects caused by excess As incorporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104746
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  • 9
    Electronic Resource
    Electronic Resource
    Luminescence of thin uranium oxide films
    Amsterdam : Elsevier
    Journal of Luminescence 35 (1986), S. 311-319 
    Details
    ISSN: 0022-2313
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-2313(86)90017-7
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  • 10
    Electronic Resource
    Electronic Resource
    Interaction of water vapor with clean and oxygen-covered uranium surfaces
    Amsterdam : Elsevier
    Surface Science Letters 183 (1987), S. A166-A167 
    Details
    ISSN: 0167-2584
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-2584(87)90142-3
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