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  • 1
    Electronic Resource
    Electronic Resource
    Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins (2000)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 405 (2000), S. 767-769 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The arrangement of spins at interfaces in a layered magnetic material often has an important effect on the properties of the material. One example of this is the directional coupling between the spins in an antiferromagnet and those in an adjacent ferromagnet, an effect first discovered ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35015515
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  • 2
    Electronic Resource
    Electronic Resource
    Control of the axis of chemical ordering and magnetic anisotropy in epitaxial FePt films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5967-5969 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of epitaxial films of the L10 phase of FePt, with the tetragonal c axis along either the film normal or in-plane, is described. Films were grown by coevaporation of Fe and Pt, under ultrahigh vacuum conditions, onto a seed film of Pt grown on MgO or SrTiO3 substrates. The perpendicular or in-plane orientation of the c axis was controlled by selecting the (001) or (110) substrate plane, respectively. Nearly complete chemical ordering was achieved for growth at 500 °C for both orientations. Magnetic and magneto-optical characterization of these films confirmed the huge magnetic anisotropy expected for this phase. In the most highly ordered films, anisotropy fields in excess of 120 kOe were measured. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362122
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  • 3
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance at low fields in [(NixFe1−x)yAg1−y]/Ag multilayers prepared by molecular-beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3688-3694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and magnetic properties of [111]-oriented multilayers comprising ferromagnetic films of Permalloy-silver alternating with Ag spacer films are described. The multilayers are grown by molecular-beam epitaxy on Pt(111) seed films on sapphire (0001) substrates at temperatures in the range 25–175 °C. For a series of multilayers with similar bilayer periods ((approximately-equal-to)50 A(ring)) the magnetoresistance (MR) is found to be strongly dependent on both growth temperature and subsequent annealing temperature. The multilayers exhibit a negative magnetoresistance in the as-grown state which more than doubles when the growth temperature is increased from 25 to 100 °C; however, the highest MR (peak 5.6%; maximum slope 0.4% per Oe) is obtained by annealing (at 400 °C) multilayers grown at 100 °C. The primary effects of annealing are an improvement of structural order, partial segregation of Ag from the ferromagnetic films into adjacent Ag films, a slight decrease in laminar order, and a reduction in long-wavelength roughness of the multilayer interfaces. No evidence is found for discontinuities in the magnetic layers with the highest MR.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357437
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  • 4
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance at low fields in [(NixFe1−x)yAg1−y]/Ag multilayers prepared by molecular beam epitaxy (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6618-6618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural changes that accompany the development of GMR (giant magnetoresistance) at low ((approximately-less-than)10 Oe) fields in annealed magnetic multilayers are of current interest because of potential applications of such structures in sensors. In this paper we report a study of the development of GMR in [111]-oriented multilayers comprising ferromagnetic films of a mixture of Ag and permalloy (NixFe1−x, x∼0.8) alternating with Ag spacer films. The multilayers were grown by molecular beam epitaxy (MBE) on Pt(111) seed films on sapphire (0001) substrates at temperatures in the range 20 to 200 °C. The structure of the multilayers was investigated using x-ray diffraction and electron microscopy. For a series of multilayers grown with nominally identical ferromagnetic and spacer layer thicknesses, the magnetoresistance is found to be strongly dependent on both growth temperature and subsequent annealing temperature. The multilayers exhibited a negative magnetoresistance in the as-grown state which more than doubled when the growth temperature was increased from 20 to 100 °C. However, the highest magnetoresistance (peak 5.6%; maximum slope 0.4% per Oe) was obtained by annealing (at 400 °C) multilayers grown at 100 °C. Transmission electron microscopy studies of such multilayers showed no evidence for discontinuities or penetration of the ferromagnetic films by Ag along grain boundaries. Thus, we conclude that discontinuous or granular multilayers with complete phase separation are not necessary for GMR with low saturation fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358181
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  • 5
    Electronic Resource
    Electronic Resource
    Synchrotron x-ray diffraction studies of the lattice and magnetic structure of epitaxial Dy films in LaF3/Dy/LaF3 sandwiches (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4465-4468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice and magnetic x-ray diffraction from a 2000 A(ring) thick film of Dy, sandwiched by LaF3 films on a GaAs(111) substrate, are reported. The structure was grown by molecular beam epitaxy with the c axis of the Dy parallel to the LaF3 c axis and GaAs [111] axis. We find that the c-axis lattice constant of the Dy has a similar temperature dependence to bulk Dy from room temperature to about 110 K, but below this, the film is different from bulk. The transition to ferromagnetic ordering at ∼86 K exhibits temperature hysteresis which is also evident in the magnetic x-ray scattering and SQUID magnetometry data. This hysteresis may arise from a combination of the strain-energy barrier accompanying the transition and magnetic inhomogeneities in the film. The temperature dependence of the magnetic wave vector is qualitatively similar to bulk, although a weaker dependence is observed below ∼110 K, which is possibly caused by magnetoelastic effects. The magnetic coherence length (310 A(ring)) is significantly shorter than the structural coherence length (730 A(ring)).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349077
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  • 6
    Electronic Resource
    Electronic Resource
    Synchrotron x-ray diffraction studies of the lattice and magnetic structure of epitaxial Dy films in LaF3/Dy/LaF3 sandwiches (abstract) : 35th annual conference on magnetism and magnetic materials San Diego, California (USA) 29 Oct−1 Nov 1990 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5319-5319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice and magnetic x-ray diffraction from a 2000 A(ring) thick film of Dy, sandwiched by LaF3 films on a GaAs(111) substrate, are reported. The structure was grown by molecular beam epitaxy with the c axis of the Dy parallel to the LaF3 c axis and GaAs [111] axis. We find that the c-axis lattice constant of the Dy has a similar temperature dependence to bulk Dy from room temperature to about 110 K, but below this, the film is different from bulk. The transition to ferromagnetic ordering at ∼86 K exhibits temperature hysteresis which is also evident in the magnetic x-ray scattering and SQUID magnetometry data. This hysteresis may arise from a combination of the strain-energy barrier accompanying the transition and magnetic inhomogeneities in the film. The temperature dependence of the magnetic wave vector is qualitatively similar to bulk, although a weaker dependence is observed below ∼110 K, which is possibly caused by magnetoelastic effects. The magnetic coherence length (310 A(ring)) is significantly shorter than the structural coherence length (730 A(ring)).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348062
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  • 7
    Electronic Resource
    Electronic Resource
    Oxygen-enhanced IrMn spin valves deposited by ion-beam and magnetron sputtering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6925-6927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhancement of giant magnetoresistance properties of single (bottom) and dual IrMn-based spin valves through exposure of part of the CoFe pinned layer to O2 is reported. Under optimal conditions, a ΔR/R of 10.4% [Hua=460 Oe, Hf=5.1 Oe, and Hc=4.7 Oe for a free and pinned layer thickness (permalloy equivalent) of 50 Å each] for an ion beam sputtered single spin valve, and a ΔR/R of as high as 20.5% for a magnetron sputtered dual spin valve having a 30 Å thick CoFe free layer are observed, compared to a value of 6.5% and 10.6% for the corresponding spin valve without O2 exposure, respectively. Transmission electron microscopy results reveal the presence of a thin (10 Å) crystalline oxygen-containing layer near the IrMn–CoFe pinned layer interface as a result of O2 exposure. X-ray reflectivity data show smoother interfaces for the spin valves subjected to O2 exposure, consistent with the lower Hf and smaller sheet resistance observed for these samples. The enhanced ΔR/R thus can be attributed to improved growth after O2 exposure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356716
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependent chemical ordering in FePt(001) and FePt(110) films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6956-6958 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth temperature is one of the critical parameters in the formation of the chemically ordered L10 phase in FePt. To uniquely determine the influence of growth temperature, while other growth parameters remain fixed, we present the "temperature wedge method" where a calibrated temperature gradient of several hundred Kelvin is established across the substrate during co-deposition of Fe and Pt. Samples were deposited in a temperature range of 250 °C–600 °C simultaneously on MgO(001) and MgO(110) substrates. The Fe(approximate)50Pt(approximate)50 composition was verified by Rutherford backscattering. The chemical order parameter, S, at different positions along the samples, i.e., at different growth temperatures, was determined by x-ray diffraction measurements, and it was found that at all temperatures S(001)〉S(110). Perpendicular and in-plane magneto-optic Kerr hysteresis loop measurements indicate large magnetic anisotropy at the "hot ends" of the samples, corresponding to large values of S. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372898
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  • 9
    Electronic Resource
    Electronic Resource
    Ion induced magnetization reorientation in Co/Pt multilayers for patterned media (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5768-5770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Pt multilayer films with perpendicular magnetic anisotropy and large out-of-plane coercivities of 3.9–8.5 kOe have been found to undergo a spin reorientation transition from out-of-plane to in-plane upon irradiation with 700 keV nitrogen ions. X-ray reflectivity experiments show that the multilayer structure gets progressively disrupted with increasing ion dose, providing direct evidence for local atomic displacements at the Co/Pt interfaces. This effectively destroys the magnetic interface anisotropy, which was varied by about a factor of 2, between KS≅0.4 erg/cm2 and KS≅0.85 erg/cm2 for two particular films. The dose required to initiate spin-reorientation, 6×1014 N+/cm2 and 1.5×1015 N+/cm2, respectively, scales with KS. It is roughly equal to the number of Co interface atoms per unit interface area contributing to KS. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372516
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  • 10
    Electronic Resource
    Electronic Resource
    High magnetoresistance permalloy films deposited on a thin NiFeCr or NiCr underlayer (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6992-6994 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significantly enhanced anisotropic magnetoresistance (MR) in permalloy (Ni0.81Fe0.19) films deposited on a thin (Ni0.81Fe0.19)1−xCrx or Ni1−xCrx underlayer is reported. The maximum ΔR/R enhancement was observed using the underlayer with x(approximate)0.44 at an optimum thickness of (approximate)30–45 Å, depending on the deposition technique. An enhancement of 75%–150% was observed for 45–430 Å thick permalloy films, compared to the films deposited without this underlayer. The ΔR/R enhancement is attributed to the decrease in the resistivity ρ and the increase in Δρ of the permalloy film due to the formation of large (111) textured crystal grains in the permalloy films deposited on this underlayer, as revealed by the x-ray diffraction results obtained using synchrotron radiation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372908
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